210 results on '"Kasprowicz, Bryan S."'
Search Results
52. CPL mask technology for sub-100-nm contact hole imaging.
53. Limits of strong phase-shift patterning for device research.
54. Evaluation of new mask materials for improved lithography performance
55. Application of critical shape analyses to two-dimensional patterns
56. Comparison of 2D measurement methodologies and their viability in a manufacturing environment.
57. Application of Chromeless Phase Lithography (CPL) masks in ArF lithography.
58. Investigating inspectability and printability of contamination deposited during SEM analysis
59. Evaluation of new mask materials for improved lithography performance.
60. Development of advanced multi-tone mask by using two different transmittance modulation materials
61. Influence of non-uniform intensity distribution of deformed pellicle for N7 patterning
62. Introducing the EUV CNT pellicle
63. Combining mask and OPC process verification for improved wafer patterning and yield
64. Production and evaluation of measuring equipment for share viscosity of polymer melts included nanofiller with injection molding machine
65. Approach of UV nanoimprint lithography using template with gas-permeable and gaseous adsorption for reduction of air-trapping issue
66. High-performance fabrication process for 2xnm hole-NIL template production
67. Fundamental study of green EUV lithography using natural polysaccharide for the use of pure water in developable process
68. Reticle decision center: a novel applications platform for enhancing reticle yield and productivity at 10nm technology and beyond
69. Development of actual EUV mask observation method for micro coherent EUV scatterometry microscope
70. Improvement of photomask CD uniformity using spatially resolved optical emission spectroscopy
71. Correction of deflection under mask’s own weight by bending mask technology
72. Defect inspection and printability study for 14 nm node and beyond photomask
73. To repair or not to repair: with FAVOR there is no question
74. Registration performance on EUV masks using high-resolution registration metrology
75. Mechanical stress induced by external forces in the extreme ultraviolet pellicle
76. The study of CD side to side error in line/space pattern caused by post-exposure bake effect
77. The CD control improvement by using CDSEM 2D measurement of complex OPC patterns
78. Investigation of fabrication process for sub 20-nm dense pattern of non-chemically amplified electron beam resist based on acrylic polymers
79. Scanning coherent scattering methods for actinic EUV mask inspection
80. 7-nm e-beam resist sensitivity characterization
81. Evaluation of the properties of the permeability film material using cellulose nanofibers
82. Prototyping 9-inch size PSM mask blanks for 450mm wafer process (2016)
83. Writing next-generation display photomasks
84. Nanoimprint wafer and mask tool progress and status for high volume semiconductor manufacturing
85. The performance improvement of SRAF placement rules using GA optimization
86. OPC care-area feedforwarding to MPC
87. UDOF direct improvement by modulating mask absorber thickness
88. Quantifying imaging performance bounds of extreme dipole illumination in high NA optical lithography
89. Comparing curvilinear vs Manhattan ILT shape efficacy on EPE and process window
90. Experimental verification of AI decomposition-based source optimization for M1 two-bar building blocks in 0.33NA EUVL
91. Analyzing EUV mask costs
92. Mask manufacturing of advanced technology designs using multi-beam lithography (part 2)
93. Reticle inspection equipment productivity increase using SEMI specification for reticle and pod management
94. Take a byte out of MEEF: VAMPIRE: Vehicle for Advanced Mask Pattern Inspection Readiness Evaluations
95. Evaluation of photomask flatness compensation for extreme ultraviolet lithography
96. Observation results of actual phase defects using micro coherent EUV scatterometry microscope
97. YieldStar based reticle 3D measurements and its application
98. Impact of noise sources and optical design on defect sensitivity for EUV actinic pattern inspection
99. Development of a novel closed EUV pellicle for EUVL manufacturing
100. NXE pellicle: development update
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