1. An Investigation on the Optimization and Scaling of Complementary SiGe HBTs
- Author
-
Partha S. Chakraborty, Kurt A. Moen, and John D. Cressler
- Subjects
Computer science ,Bipolar junction transistor ,Doping ,Context (language use) ,Heterojunction ,Hardware_PERFORMANCEANDRELIABILITY ,Electronic, Optical and Magnetic Materials ,Silicon-germanium ,chemistry.chemical_compound ,chemistry ,Hardware_INTEGRATEDCIRCUITS ,Electronic engineering ,Electronic design automation ,Electrical and Electronic Engineering ,Scaling - Abstract
We use predictive technology computer-aided design to investigate the device design challenges and optimization issues that will be necessarily encountered in scaling of complementary silicon-germanium (C-SiGe) heterojunction bipolar transistors (HBTs). A fully integrated simulation framework was developed to design and optimize device doping and Ge profiles for any given target performance, using important circuit-relevant figures-of-merit. This methodology was successfully utilized to realize device profiles for multiple C-SiGe technology nodes within the context of a C-SiGe scaling roadmap. A method for optimizing the ac performance of SiGe HBTs geared for both high-performance and low-power applications is also presented. The performance metrics of the optimized profiles presented here are then compared with those of existing fabricated devices reported in the literature.
- Published
- 2013