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Reconciling 3-D Mixed-Mode Simulations and Measured Single-Event Transients in SiGe HBTs
- Source :
- IEEE Transactions on Nuclear Science. 57:3342-3348
- Publication Year :
- 2010
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2010.
-
Abstract
- Comprehensive 3-D mixed-mode simulations, including accurate modeling of parasitic elements present in the experimental setup, resulted in close agreement between simulated and experimentally-measured heavy-ion-induced transients in first-generation SiGe HBTs. We have identified the key factors affecting previous simulations and observed experimental differences. The approach employed is also applicable to other submicron, high-speed technologies. Furthermore, we present a plausible answer to the previously unexplained issue of higher collector currents in single-transistor SiGe HBT single-event transients under positive collector bias. The new observations and conclusions facilitate improved understanding and potential mitigation options.
- Subjects :
- Nuclear and High Energy Physics
Materials science
Heterojunction bipolar transistor
Semiconductor device modeling
Mixed mode
Silicon-germanium
chemistry.chemical_compound
Key factors
Nuclear Energy and Engineering
chemistry
Electronic engineering
Electrical and Electronic Engineering
Radiation hardening
Event (particle physics)
Simulation
Subjects
Details
- ISSN :
- 15581578 and 00189499
- Volume :
- 57
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Nuclear Science
- Accession number :
- edsair.doi...........c16f127985136564fc00b2edda10ad3c