Back to Search
Start Over
An investigation of collector-base transport in SiGe HBTs designed for half-Terahertz speeds
- Source :
- 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
- Publication Year :
- 2010
- Publisher :
- IEEE, 2010.
-
Abstract
- A new method is introduced to investigate electron transport in the collector-base space charge region of SiGe HBTs designed for half-Terahertz speeds. Using commercially-available Monte Carlo and hydrodynamic TCAD tools, one can eliminate the fundamental limitations of hydrodynamic models related to velocity overshoot and impact ionization. The method is verified in a 200-GHz SiGe technology and then applied to hypothetical 350-GHz and half-THz (500 GHz) SiGe HBTs. This new approach requires far less computational complexity than classical Monte Carlo tools.
Details
- Database :
- OpenAIRE
- Journal :
- 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
- Accession number :
- edsair.doi...........1ec1e266798a2b0d42d937434ccca586