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An investigation of collector-base transport in SiGe HBTs designed for half-Terahertz speeds

Authors :
John D. Cressler
Kurt A. Moen
Partha S. Chakraborty
Jiahui Yuan
Source :
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Publication Year :
2010
Publisher :
IEEE, 2010.

Abstract

A new method is introduced to investigate electron transport in the collector-base space charge region of SiGe HBTs designed for half-Terahertz speeds. Using commercially-available Monte Carlo and hydrodynamic TCAD tools, one can eliminate the fundamental limitations of hydrodynamic models related to velocity overshoot and impact ionization. The method is verified in a 200-GHz SiGe technology and then applied to hypothetical 350-GHz and half-THz (500 GHz) SiGe HBTs. This new approach requires far less computational complexity than classical Monte Carlo tools.

Details

Database :
OpenAIRE
Journal :
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
Accession number :
edsair.doi...........1ec1e266798a2b0d42d937434ccca586