Cite
An investigation of collector-base transport in SiGe HBTs designed for half-Terahertz speeds
MLA
John D. Cressler, et al. “An Investigation of Collector-Base Transport in SiGe HBTs Designed for Half-Terahertz Speeds.” 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Oct. 2010. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........1ec1e266798a2b0d42d937434ccca586&authtype=sso&custid=ns315887.
APA
John D. Cressler, Kurt A. Moen, Partha S. Chakraborty, & Jiahui Yuan. (2010). An investigation of collector-base transport in SiGe HBTs designed for half-Terahertz speeds. 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Chicago
John D. Cressler, Kurt A. Moen, Partha S. Chakraborty, and Jiahui Yuan. 2010. “An Investigation of Collector-Base Transport in SiGe HBTs Designed for Half-Terahertz Speeds.” 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), October. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........1ec1e266798a2b0d42d937434ccca586&authtype=sso&custid=ns315887.