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Micro groove, as a typical surface texture, has played an important role in the development of many advanced fields. This paper introduced an electrochemical machining of micro groove using masked porous cathode. A porous metallic plate covered with a mask was prepared as the masked porous cathode. During machining, the masked porous cathode was covered on the workpiece, and the electrolyte could flow into the machining region through the porous structure in the cathode for machining. As the machining unit was closed, the distribution of electrical field was uniform on the machining surface, which could improve the machining accuracy. In addition, the masked porous mask had no damage during machining and could be reused, which improved the machining efficiency. With this method, multiphysics coupling model, including flow field model, electric current model, heat transfer model, reactant transport model, and moving mesh model, was built to investigate their influence on the machining process with different flow modes. The simulation and experiment results indicated that compared with other two flow modes, jet flow mode could provide a high electrolyte velocity in the machining region around the nozzle, and the mass transfer process was enhanced, which was helpful to improve the machining quality. The effect of pulse duty cycle was investigated, and the pulse duty cycle of 20% with the frequency of 2 kHz could further improve the mass transfer process and was preferred to generate micro groove with low standard deviation and roughness. In addition, with the applied voltage rising, the depth of micro groove increased, and increasing the nozzle reciprocating motion number could enhance the mass transfer process during machining, which further improved machining quality. Finally, with the optimized flow mode and machining parameters, a group of ten micro grooves were well generated by using a masked porous cathode with ten micro slits, and the width was about 330 μm with the depth of 45 μm.

A 40 nm charge-trap embedded NVM technology is presented which is operational at the main power supply of 0.81 to 1.21 V. It is based on SONOS and requires only five extra masking steps beyond standard CMOS. A product-ready 8Mb macro is used to demonstrate technology capabilities. Key features are 25 ns read access time in the 0.99 to 1.21 V supply range and very low current consumption. The macro provides several power- saving modes, 100k write cycles and 10-year data retention for application in consumer and industrial SoCs.

A new original method to reduce time and resource consuming photolithography mask production operations has been suggested. By means of femtosecond laser direct writing, thus, gaining cleaner surrounding than for nano- and pico-second pulse processing, a 45° angle ablation geometry has been proven. LED chip separation trenches and n -GaN layer exposure were made simultaneously saving from one fundamental processing and alignment step without adverse effect from the laser-processing on the quantum well region.

The size of the plastic ball grid array (PBGA) package is getting smaller, and the problem of delamination in packaging has become more important. Therefore, in this study, the packaging process is improved through the finite element analysis (FEA) to analyze the delamination in the packaging components. First, the model of sealing and lamination is built through uniform design method (UDM) with Kriging model and response surface methodology (RSM). Then, the differences between these methods are investigated. The optimal parameters are obtained by UDM and RSM that the mold pressures are 31.7 and 42.57 MPa, temperature is 171.61 and 185 °C, and shoulder width is 358.33 and 800 μm, respectively. Due to process factors of sealing and lamination has an interaction with each other, the RSM in this case is more accurate. Therefore, the result obtained by RSM is more appropriate for the process.

This paper investigates numerically the effect of embedding a porous medium on the deposition rate in a two-dimensional (2-D) axi-symmetric vertical rotating metalorganic chemical vapor deposition (MOCVD) reactor. The 2-D Navier–Stokes, thermal-energy, and mass transfer equations as well as the wall surface reaction for growth rate in this model are solved by using commercial computational fluid dynamics (CFD) package, FLUENT (version 6.2), with a segregated method. As shown in the results, the recirculation cell caused by a buoyancy effect above the susceptor may be eliminated due to a large pressure drop during CVD process. Under a condition of the appropriate porosity and the appropriate distance between a porous medium and the susceptor, the film uniformity may be increased about 53.3% owing to a thin boundary layer near the susceptor. In addition, the case of a porous medium embedded in a modified MOCVD reactor is considered in this study to increase the film uniformity further. The numerical results show that the uniformity of the film may be enhanced about 77.9%.

Rutile iridium dioxide (IrO2) surfaces were studied by cross-sectional scanning tunneling microscopy (XSTM). Atomically flat surfaces prepared by in situ ultra high vacuum cleaving of crystalline platelets of thicknesses

Cyclized-perfluoropolymer, which is commercialized under the trade name CYTOPTM, possesses the desirable properties of low dielectric constant (er = 2.1) and low dissipation factor (tan δ = 0.0007). We have developed a method to integrate CYTOPTM dielectric interlayer with state-of-the-art power GaAs-based enhancement mode pseudomorphic high electron mobility transistor. CYTOPTM thin films with approximately 3.5 μm in thickness was spin-coated and patterned on wafers with completed transistor and nitride passivation processes. Au-based interconnect metal was then fabricated using sputtering and plating processes over the CYTOPTM dielectric layer. The whole integrated structure was found to be stable at annealing temperatures up to 200 °C. Moreover, output power, gain, and power added efficiency of the CYTOPTM-integrated 0.5 μm gate transistor was measured and compared with standard air-bridged devices. The studies show that the CYTOPTM low-k dielectric layer has negligible effect on the device performances as compared with the air-bridged devices.

Detailed electrochemical investigations have been carried out on LiNi0.8Co0.17Al0.03O2 as cathode materials for lithium ion batteries in the potential range of 2.8–4.3 V. This sample showed an initial discharge capacity of 186 mAh/g which corresponds to 67% of its theoretical capacity. The effect of addition of LiCoO2 to LiNi0.8Co0.17Al0.03O2 in the ratio 10:90, 30:70, 50:50 has been studied. The results showed that the addition of LiCoO2 has improved the working voltage of the cell. In addition, the percentage retention (95%) of the cell is significantly increased in the composition ratio 50:50.

This paper reports the characteristics of a strain-induced thermally controlled loss-tunable long-period fiber grating (LPFG) fabricated on a prepatterned corrugated substrate. Periodic microbending at the fiber-substrate interface induces mode coupling between the core and asymmetrical cladding modes that yields narrow-band attenuation as large as -25 dB. Several parameters that affect the performance of the tunable LPFG, such as the diameter of the etched fiber, number of grating periods, curing condition, and thermal expansion properties of the bonding materials, are investigated. This paper also demonstrates the integration of an on-chip thin-film microheater that also functions as a temperature sensor for the LPFG.

An electrically controllable, all-fiber polarization-mode dispersion (PMD) emulator is constructed using thin-film microheaters to temperature tune the birefringence of 30 PM-fiber sections spliced at 45/spl deg/ angles. Compact packaging is achieved by mounting the fiber heaters onto an array of silicon V-grooves. The advantages of this electrically tunable emulator design are low loss, negligible PDL, simple construction, no internal reflections, and no moving parts.

As routing tables in core Internet routers grow to exceed 100,000 entries, it is becoming essential to develop methods to reduce the lookup time required to forward packets toward their destinations. In this paper, we employ a bank of novel thermally tuned fiber-Bragg-grating-based optical correlators to construct an "optical bypass" to accelerate conventional electronic Internet routers. The correlators are configured as a routing table cache that can quickly determine the destination port for a fraction of the incoming traffic by examining only a subset of the bits in an IP packet's 32-bit destination address. We also demonstrate a novel multiwavelength correlator based on fiber Bragg grating that can simultaneously recognize the header bits on multiple wavelengths for use in wavelength-division-multiplexed (WDM) systems. Using the optical bypass, routing table lookup times are reduced by an order of magnitude from microseconds to nanoseconds and are limited only by the speed of the optical switch.

Electrochemically reductive dechlorination of chlorophenols on zinc and nickel electrodes in propylene carbonate solvent is investigated. The reductive dechlorination of a variety of chlorophenols on the zinc electrode occurred at different potentials. For pentachlorophenol, two reductions were found at −2.4 V and −1.7 V. Two reductions were also found at −2.7 V and −1.95 V for 2,3,4,6-tetrachlorophenol. Only one reduction was found for 2,4,5-trichlorophenol, 2,4-dichlorophenol and 2-chlorophenol, it was observed at −2.2 V, −2.35 V and −2.5 V respectively. The electrolysis of controlled potential was held at −2.7 V. 2,3,4,6-tetrachlorophenol was dechlorinated and trichlorophenols and dichlorophenols were the major intermediate products. 2-chlorophenol was also dechlorinated at the potential of −2.7 V. The result shows chlorophenols can completely dechlorinate on the zinc cathode.

The L3+C muon detector at the CERN electron–positron collider, LEP, is used for the detection of very-high-energy cosmic c-ray sources through the observation of muons of energies above 20, 30, 50 and 100 GeV. Daily or monthly excesses in the rate of single-muon events pointing to some particular direction in the sky are searched for. The periods from mid July to November 1999, and April to November 2000 are considered. Special attention is also given to a selection of known c-ray sources. No statistically significant excess is observed for any direction or any particular source., Facultad de Ciencias Exactas

To promote the feasibility of using photonic crystals to enhance light extraction of light-emitting diodes (LEDs) for industrial applications, the request for the high-yield and simple exposure process to pattern two-dimensional photonic crystals (2DPCs) becomes rather urgent. In this work, we developed a one-shot three-beam laser interference system to fabricate a 2DPC on an InGaN-based green LED to address its performance for backlight display applications. Using the current exposure system we develop here, a submicro-patterned area of 6 mm in diameter can be achieved. The experimental results show that the operating voltage of a 1 times 1 mm2 in-area LED incorporated with the 2DPC is around 4 V, and the light extraction efficiency is enhanced by a factor of 2.1.

Experimental studies of the lasing efficiency of optically pumped 4-/spl mu/m GaInSb-InAs-AlSb multiple-quantum-well (MQW) lasers that emitted >1-W peak power/facet at 80 K indicated that internal loss is the main factor that limits the power output. The internal loss coefficient and internal quantum efficiency were determined by measuring the lasing efficiency versus temperature for devices of different facet reflectivities and lengths. The internal loss coefficient was found to increase from /spl sim/18 cm/sup -1/ near 70 K to /spl sim/60-100 cm/sup -1/ near 180 K, while the internal quantum efficiency remained constant at /spl sim/47% (or /spl sim/67% with the correction for the finite absorption of the active region) from 70 to 130 K. The increase of internal loss and the decrease of external quantum efficiency versus temperature were found very similar to those of double-heterostructure InAsSb-GaSb lasers and were similarly interpreted in terms of intervalence band carrier absorption. Extrapolation of power performance for improved devices with lower internal loss indicated that high-efficiency multi-watt quasi-CW output with a broad-area brightness of /spl sim/1 MW/cm/sup 2/.sterad is possible.

Strained GaInAs grown on InP offers an alternative to antimonide-based technology for mid-IR light emitting diodes and lasers operating at wavelengths up to approximately 2.4 microns. Such devices consist of compressively strained GaInAs carrier quantum well, with either lattice-matched or tensile-strained GaInAs carrier confinement barriers, and lattice-matched AlInAs optical confinement layers. The paper explores the wavelength limits which are dictated by the requirements for pseudomorphic growth and adequate carrier confinement. The electrical and optical results obtained from structures emitting at 2.1 and 1.8 microns at room temperature are reported and the data compared with the results of the Van de Walle model solid theory.

A method of fabricating submicron gratings for optoelectronic devices from a glass mask was proposed and demonstrated. The glass mask has gratings on both sides with a period of at least four times the final feature size. By introducing an offset to the grating periods on the mask, one can achieve multiple-period gratings with a very fine period spacing for advanced wavelength-division multiplexing (WDM) devices. In this paper, we demonstrated 0.5-/spl mu/m second-order gratings for 1.55-/spl mu/m DFB lasers and gratings with a 6-/spl Aring/ period difference for a four-channel WDM laser array using only optical sources. The Moire pattern caused by the spatial frequency beating was also observed and discussed. The Moire pattern could serve as an effective tool to measuring wavelength channel spacing between devices with an unprecedented (0.1 /spl Aring/) resolution.

Aiming at future uses in large silicon tracking devices, 4/spl times/8 cm/sup 2/ silicon microstrip sensors were fabricated, and the processes related to such sensors were studied. The fabrication of 4/spl times/8 cm/sup 2/ silicon microstrip sensors on 100 mm wafers has become a routine procedure with a good yield rate. A 4/spl times/64 cm/sup 2/ long ladder, assembled from eight pieces of 4/spl times/8 cm/sup 2/ sensors, has been tested at the CERN SPS area. Test results show that such a detector is feasible. >

In this paper, we focus on electronics industry by now, in the manufacturing process, the servo system of the position of the alignment platen to do a study on methods of improving the software, which aims for the measurement system in the circuit board lamination. Characteristic marker can do accurate alignment. In our method, as do the pre-photographic image pre-processing to detect and record the image in the location of the marker, then according to the measurement system captured images do wavelet transform and reduce the image size to improve performance, supplemented by 2: 1 candidate region search. That can do to enhance performance. By the actual experimental results can also be seen, this study found the correct way to position objects, and the time performance can finally improve.

The influence of ionic and nonionic surfactants on the solubility, nucleation, and growth habit of γ-aminobutyric acid (GABA) in water has been studied. Between 25° and 55 °C, no effect of the surface-active agents on GABA solubility was detected. On the other hand, it has been found by two experimental techniques (laboratory-scale batch crystallization and DSC), that these additives tend to delay homogeneous nucleation. Attachment energies of the main crystallographic faces of GABA (F faces in the PBC theory) were calculated via molecular/crystal modeling by means of the GenMol software, in order to rpedict the theoretical habit of GABA crystal in vacuo. Predictions on habit modification are found in good agreement with the shape of crystals grown from aqueous solution with or without additive.

The carbon nanotubes (CNTs) were reinforced with poly(ethylene terephthalate) (PET) matrix resins to improve the electrical, thermal and mechanical properties of CNTs/PET composites in different contents of 0.25, 0.5, 0.75, 1.0, 1.25, 1.5 wt%. The powder material of PET and CNTs were first blended and then hot-pressed to form film specimen. The organizations and microstructures of the composites were studied with scanning electron microscope (SEM), the Atomic Force Microscope (AFM). The electrical resistivity of the composites was measured and was found to reduce rapidly when the contents of CNTs increase from 0 to 0.75%. The rate of reduction decreases as the contents of CNTs is greater than 0.75%. Temperature effect on the resistivity experiments indicates that the resistivity of the composites is not governed by CNTs, but the polymer materials between neighboring MWCNTs.

A method of fabricating submicron gratings for optoelectronic devices from a glass mask was proposed and demonstrated. The glass mask has gratings on both sides with a period of at least four times of the final feature size. By modifying the grating periods on the mask, one can achieve multiple‐period gratings with a very fine period spacing for advanced wavelength division multiplexing (WDM) devices. In this letter, we demonstrated 0.5 μm second‐order gratings for 1.55 μm distributed‐feedback lasers and gratings with a 6 A period difference for WDM laser arrays using only optical sources.

Two different TDDB behaviors have been for the first time observed in our work with different dual gate oxide thicknesses. (1st) The different transient scheme during TDDB stress for thin and thick oxide thickness, and (2nd) The different neutral trap generation rate during oxide degradation procedure for n and p type capacitors and different neutral trap distribution post oxide stress for thin and thick oxides. A variety of physical and electrical methodologies are presented in this paper to investigate the role of boron on 0.17 /spl mu/m dual gate and dual oxide technologies.

We demonstrate a 30-section, compact, all-fiber polarisation mode dispersion (PMD) emulator that uses an integrated series of evaporated micro-heaters to thermally tune the birefringence of each differential group delay (DGD) section and accurately reproduce PMD statistics.

A pressure-induced microbending long-period grating is used to determine the birefringence axes of a PM fiber. From the change of polarization-sensitive transmission spectrum versus rotational angle of the fiber, the birefringence axes can be accurately identified.

We present a novel low temperature bonding technique for fabricating long wavelength vertical cavity surface emitting lasers (VCSEL's). The technique relies on a 750 /spl Aring/-thick intermediate spin-on glass layer to join a highly efficient InP-based InGaAs-InGaAsP strain-compensated multiple quantum well (SC-MQW) gain medium on a GaAs substrate. We fabricated the device on GaAs in order to take advantage of highly reflective AlAs-GaAs Bragg reflectors. The optically-pumped device has a low threshold pump power of 4.2 kW/cm/sup 2/ at room temperature and operates at a wavelength of 1.44 /spl mu/m. >

We report optically pumped long wavelength vertical‐cavity surface‐emitting lasers (VCSELs) made of strain‐compensated multiple quantum wells. The structure of the VCSELs consists of 30 pairs of compressive strained wells and tensile strained barriers as the gain medium and Si/SiO2 dielectric mirrors. The lasers operate at 1.59 μm wavelength. The threshold power density was measured to be 3 kW/cm2 at room temperature, corresponding to a threshold current density of about 2 kA/cm2. The VCSELs have a characteristic temperature T0 of 90 K between 10 and 60 °C, and 60 K from 70 to 110 °C.

We present an optically pumped long wavelength vertical cavity surface emitting laser using an InGaAs/InGaAsP strain-compensated multiple quantum well gain medium fabricated an a GaAs substrate. The device relies on an 800 /spl Aring/-thick intermediate spin-on glass layer to join the high-gain InP-based gain medium with highly reflective GaAs-based AlAs/GaAs Bragg reflectors. At room temperature, the device operates at 1.44 /spl mu/m and has a low threshold pump power of 4.2 KW/cm/sup 2/.

Multiple quantum well (MQW) lasers have exhibited improved performance over conventional double heterostructure (DH) lasers for low threshold, high frequency, and high power applications. Ideally, the modulation bandwidth should increase with the number of wells due to the enhancement of differential gain. However, in reality, the maximum number of wells that can work effectively is governed by carrier transport. Because of the lower mobility of holes, those wells far away from the hole injection side (p-electrode) receive less carriers and have a smaller gain; and those wells close to the p-electrode receive more carriers and have a higher gain. The excess carriers in the wells near the p-electrode tend to reduce the differential gain, thus degrade the high frequency characteristics. A carrier diffusion model is used to theoretically analyze the effect of nonuniform pumping in a 1.55 /spl mu/m InGaAs/InGaAsP MQW (20 wells) laser. A substantial nonuniformity in gain distribution among the wells limits the ultimate modulation bandwidth. Possible schemes of overcoming the transport-limited nonuniform pumping such as using p-doping are discussed.

For high-capacity wavelength division multiplexing (WDM) optical communication systems, distributed feedback (DFB) laser arrays having a nanometer wavelength spacing are highly desirable. Most of the WDM laser arrays fabricated today used E-beam lithography to achieve accurate control of the channel spacing. However, E-beam lithography is not suitable for high volume production because of its low throughput and high cost. Recently, we developed a new fabricating process, cascaded self-induced holography, to form submicron gratings. This process is simple, reliable, and insensitive to vibrations and environmental changes. In this paper, we use cascaded self-induced holography to demonstrate multiple grating pitches having a period difference of a few angstroms between adjacent devices. This technique is particularly attractive for WDM laser arrays.

The effects of strain and number of quantum wells on optical gain, differential gain, and nonlinear gain coefficient in 1.55- mu m InGaAs/InGaAsP strained-quantum-well lasers are theoretically investigated. Well-approximated empirical expressions are proposed to model these effects. Using these formulas, one can easily and accurately predict the performance of a laser diode for a given structure. Therefore, these empirical formulas are useful tools for design and optimization of strained quantum well lasers. As a general design guideline revealed from the empirical formulas, the threshold current is reduced with the compressive strain, and the modulation bandwidth is most efficiently increased with the number of wells. >

In our previous work, we first propose the Au/AuBe is a good ohmic contact material to p-type ZnTe. After apply the material to II-VI light emitting diode, the operation voltage as low as 2.4V can be observed. The II-VI blue light emitting diode (LED) were grown in a RIBER 32P system with Zn(6N), Se(6N), Te(6N), Cd(6N) on (001) GaAs+ substrate. The structure consisted of a GaAs:Si(n+) buffer layer, ZnSe:C1 (0.5um), ZnSe(200A)/ZnCdSe (100A) multiple quantum well, ZnSe(200A), ZnSe:N(0.3um), ZnSe:N/ZnTe:N multilayer and ZnTe:N (300A). Standard photolithography technology was doen to fabricate the diode. The mesa etch was done by (formula available in paper) etching solution. The p-type ohmic was done by AuBe/Au metal. The emission wavelength was 530nm (room temperature) and 495 (30K) with 2.4V under CW operation. Since low operation voltage introduced less heat in the device, better thermal behavior can be expected with this low operation voltage.

The reliable n+-ZnSSe metal-semiconductor-metal (MSM) blue-green light emitting diodes (LEDs) have been fabricated. The contact metal was CuGe/Pt/Au. The current transport mechanism agree very well with the back-to-back tunneling diodes. The kink phenomena were observed in the MSM current- voltage curves. In the metal-semiconductor interface, the element Zn in ZnSSe can be replaced by Cu results in some acceptor levels as radiative recombination centers in the MS interface. The peak wavelength in the LED electroluminescent (EL) spectra was strongly dependent on the injection currents from 5 to 40 mA. The peak wavelength and full width at half maximum are 510 and 10 nm, respectively, at 10 mA injection current. When the injection current increases to 15 mA, the peak wavelength shifted to 530 nm due to different recombination centers. Further increasing the injection currents, the peak wavelength shifted slightly to the long wavelength side.© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

This paper gives the extensive experience of using ripple signals in direct load control. The content includes the following: (A) installation and testing: the experience about the installation and testing is quite important. The problems and solutions are also discussed. This also includes the effect of ripple control system on the distribution system. (B) Control of air-conditioners and other loads: the types of air-conditioners include window, basket, and central. For small size machines, the power sources can be switched on or off directly, but for large size machines, the ripple signals can only be used to control the condenser relays. Applications of ripple control in water heaters, street lights, motors, and multi-tariff meters are also given. (C) Substation control simulation: the simulation of direct load control on a power transformer is used to show the method of avoiding transformer overload.

Mostly, crown-shaped DRAM capacitor is formed by depositing a series of polysilicon and silicon oxide in a recess followed by etching back to form the vertical side-wall. In this paper, we are proposing a new method which is directly using crown-shaped photoresist pattern in conjunction with the chromless mask (or high transmission half-tone mask) to define the crown structure. A chromless 180 degrees phase shifters on transparent substrate (or high transmission half-tone phase shift mask) is used to create the 'destructive interference' between phase shifters and clear areas at the edges of the phase shifters to define 'dark areas' on the aerial image. The stacked capacitor pattern is defined as phase shifter region, therefore, the 'dark areas' on the edge of the phase shifter becomes the photoresist side-wall after exposing and developing. This crown-shaped resist side-wall then becomes the etching mask to form the crown-shaped capacitors. A special pattern layout of phase shift mask with two groups of phase shifters has been designed to form a double crown-shaped photoresist side- wall. The pattern includes the capacitor node phase shifter and a buffer shifter between two nodes. Lithography simulators, Depict-III, was used to simulate the aerial image intensity distribution of the phase shift mask layout. A single and double crown-shaped aerial image patterns have been simulated. The simulations have shown the results in agreement with the experiments, where a 0.15-0.25 micrometers wide vertical side-wall of a single crown pattern has been obtained. These new capacitors are estimated to increase the capacitance over the conventional thick capacitor by about 50 percent (for single crown) and 110 percent (for double crown).© (1996) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

The article utilises the analogy in dynamic equations between a mechanical and an electrical system to convert a turbine-generator mechanical model to an equivalent electrical circuit model. Based on the synchronous generator's dynamic equations and the electromagnetic torque equation, an equivalent electrical interface circuit was derived. By using the interface circuit, the circuit model of synchronous generator and the equivalent electrical circuit model of turbine-generator mechanism can thus be combined into an integrated circuit model. The integrated circuit model is helpful for analysing the interactions between the mechanical and electrical systems for a steam turbine generator unit. Based on the integrated circuit model, the article has made a comparative study between a small and a large steam turbine-generator unit. The focus was on torsional mode frequencies, and the frequency scanning and eigen-analysing approaches were used. The result shows that torsional mode frequencies can be changed by means of the electromechanical integration. Moreover, the small unit was more affected than the large one.

A partial cDNA clone encoding the gene for human transforming growth factor-beta 1 (TGF-beta 1) was isolated from a human bladder carcinoma cell line (5637) cDNA library. Following restriction enzyme processing and ligation of synthetic oligonucleotide linkers, the gene was inserted into a plasmid and transfected into Chinese hamster ovary cells. Clonal selection and growth conditions resulted in a method for production of recombinant human TGF-beta 1 at 7 mg/liter in conditioned cell medium. Through a combination of low pH treatment, cation-exchange chromatography, and salt precipitation, the recombinant human TGF-beta 1 was purified in milligram amounts to > 95% purity in a yield of about 36%. Purification to homogeneity was accomplished by chromatography on C18 silica gel. Amino acid analysis, N-terminal sequencing, and growth inhibition assays indicate identity with the molecule from human platelets.

The paper examines the design and the construction details of the test bed built for testing a solid-amine-based Regenerable CO2 Removal System (RCRS) built at the NASA/Johnson Space Center for the extended Orbiter missions. The results of tests are presented, including those for the adsorption breakthrough and the adsorption and desorption of CO2 and H2O vapor. A model for predicting the performance of regenerative CO2 and H2O vapor adsorption of the solid amine system under various operating conditions was developed in parallel with the testing of the test stand, using the coefficient of mass transfer calculated from test results. The results of simulations are shown to predict the adsorption performance of the Extended Duration Orbiter test bed fairly well. For the application to the RCRS at various operating conditions the model has to be modified.

This paper describes the implementation of a microcomputer based P-wave synchronization system for the artificial heart. This system provides for synchronization of the cardiac prosthesis pump with P-wave signals from electrodes implanted in the remnant of the natural atrium. The device carries out the functions of P-wave detection and determines the duration of systole based upon a moving average of the time intervals between successive pulses. The system has been tested both on a mock circulatory system and in vivo on calves. The purpose of the paper is to provide details of the circuitry and algorithms used.

This paper introduces new technology features to support ultra high-speed and MS/RF applications incorporated into a leading-edge fully manufacturable 0.13 /spl mu/m CMOS foundry technology (K.K. Young et al, IEDM Tech Digest, pp. 563-566, 2000). New core devices with 15.5 /spl Aring/ and nominal 75 nm physical gate lengths support at least 10% performance improvement with respect to prior release. These devices offer the best I/sub off/-I/sub dsat/ performance reported so far for 1.2 V applications. To support high-speed I/O standards, additional 1.8 V-32 /spl Aring/ I/O devices are integrated with the 15.5 /spl Aring/ transistors. Leading-edge passive elements for MS/RF applications are reported in this work. Advanced Cu/low-k back end process integration that can support up to nine layers of metal is also demonstrated.

To implement an effective optical bypass for an electronic router, the key design decision is to combine a software algorithm with a small set of dynamically configurable fiber-Bragg-grating based optical correlators. A conceptual diagram showing how the optical bypass is implemented in an IP router is shown.