Strained GaInAs quantum well mid-IR emitters

Strained GaInAs grown on InP offers an alternative to antimonide-based technology for mid-IR light emitting diodes and lasers operating at wavelengths up to approximately 2.4 microns. Such devices consist of compressively strained GaInAs carrier quantum well, with either lattice-matched or tensile-strained GaInAs carrier confinement barriers, and lattice-matched AlInAs optical confinement layers. The paper explores the wavelength limits which are dictated by the requirements for pseudomorphic growth and adequate carrier confinement. The electrical and optical results obtained from structures emitting at 2.1 and 1.8 microns at room temperature are reported and the data compared with the results of the Van de Walle model solid theory.