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Neuromorphic engineering, a methodology for emulating synaptic functions or neural systems, has attracted tremendous attention for achieving next-generation artificial intelligence technologies in the field of electronics and photonics. However, to emulate human visual memory, an active pixel sensor array for neuromorphic photonics has yet to be demonstrated, even though it can implement an artificial neuron array in hardware because individual pixels can act as artificial neurons. Here, we present a neuromorphic active pixel image sensor array (NAPISA) chip based on an amorphous oxide semiconductor heterostructure, emulating the human visual memory. In the 8 × 8 NAPISA chip, each pixel with a select transistor and a neuromorphic phototransistor is based on a solution-processed indium zinc oxide back channel layer and sputtered indium gallium zinc oxide front channel layer. These materials are used as a triggering layer for persistent photoconductivity and a high-performance channel layer with outstanding uniformity. The phototransistors in the pixels exhibit both photonic potentiation and depression characteristics by a constant negative and positive gate bias due to charge trapping/detrapping. The visual memory and forgetting behaviors of the NAPISA can be successfully demonstrated by using the pulsed light stencil method without any software or simulation. This study provides valuable information to other neuromorphic devices and systems for next-generation artificial intelligence technologies.

Two-dimensional materials could play an important role in beyond-CMOS (complementary metal–oxide–semiconductor) electronics, and the development of memristors for information storage and neuromorphic computing using such materials is of particular interest. However, the creation of high-density electronic circuits for complex applications is limited due to low device yield and high device-to-device variability. Here, we show that high-density memristive crossbar arrays can be fabricated using hexagonal boron nitride as the resistive switching material, and used to model an artificial neural network for image recognition. The multilayer hexagonal boron nitride is deposited using chemical vapour deposition, and the arrays exhibit a high yield (98%), low cycle-to-cycle variability (1.53%) and low device-to-device variability (5.74%). The devices exhibit different switching mechanisms depending on the electrode material used (gold for bipolar switching and silver for threshold switching), as well as characteristics (such as large dynamic range and zeptojoule-order switching energies) that make them suited for application in neuromorphic circuits. High-density memristive crossbar arrays made from two-dimensional hexagonal boron nitride can be fabricated with a yield of 98% and used to emulate artificial neural networks.

Electrostatic gating of two-dimensional (2D) materials with ionic liquids (ILs), leading to the accumulation of high surface charge carrier densities, has been often exploited in 2D devices. However, the intrinsic liquid nature of ILs, their sensitivity to humidity, and the stress induced in frozen liquids inhibit ILs from constituting an ideal platform for electrostatic gating. Here we report a lithium-ion solid electrolyte substrate, demonstrating its application in high-performance back-gated n-type MoS2 and p-type WSe2 transistors with sub-threshold values approaching the ideal limit of 60 mV/dec and complementary inverter amplifier gain of 34, the highest among comparable amplifiers. Remarkably, these outstanding values were obtained under 1 V power supply. Microscopic studies of the transistor channel using microwave impedance microscopy reveal a homogeneous channel formation, indicative of a smooth interface between the TMD and underlying electrolytic substrate. These results establish lithium-ion substrates as a promising alternative to ILs for advanced thin-film devices., Electrostatic gating of 2D transistors with ionic liquids presents intrinsic limitations. Here, the authors demonstrate n-type MoS2 and p-type WSe2 transistors on a lithium-ion solid electrolyte substrate, displaying sub-threshold values approaching the ideal limit of 60 mV/dec and complementary amplifier gain of 34 with 1 V supply.

Resistive random-access memory (RRAM) devices have drawn increasing interest for the simplicity of its structure, low power consumption and applicability to neuromorphic computing. By combining analog computing and data storage at the device level, neuromorphic computing system has the potential to meet the demand of computing power in applications such as artificial intelligence (AI), machine learning (ML) and Internet of Things (IoT). Monolayer rhenium diselenide (ReSe2), as a two-dimensional (2D) material, has been reported to exhibit non-volatile resistive switching (NVRS) behavior in RRAM devices with sub-nanometer active layer thickness. In this paper, we demonstrate stable multiple-step RESET in ReSe2 RRAM devices by applying different levels of DC electrical bias. Pulse measurement has been conducted to study the neuromorphic characteristics. Under different height of stimuli, the ReSe2 RRAM devices have been found to switch to different resistance states, which shows the potentiation of synaptic applications. Long-term potentiation (LTP) and depression (LTD) have been demonstrated with the gradual resistance switching behaviors observed in long-term plasticity programming. A Verilog-A model is proposed based on the multiple-step resistive switching behavior. By implementing the LTP/LTD parameters, an artificial neural network (ANN) is constructed for the demonstration of handwriting classification using Modified National Institute of Standards and Technology (MNIST) dataset.

Solid-state electrolytes have attracted significant attention in rechargeable battery and solid-state device research due to the added benefits over the liquid electrolytic counterpart owing to their solid nature. Here, we demonstrated centimeter-scale growth of MoS 2 thin film, a promising two-dimensional (2D) material for transistor and energy storage, on Li-ion solid electrolyte substrate by sulfurization of Molybdenum thin film. The sulfurized film was characterized using a combination of spectroscopic and microscopic analyses, including optical microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and Raman spectroscopy. The film was further characterized by electrical probing to measure the film quality and underlying transport mechanism.

Electrostatic gating with ionic liquids, contributing to the accumulation of high surface charge carriers, has been often exploited in thin-film transistors. However, the intrinsic liquid nature of ionic liquids inhibits them from constituting a practical platform for thin-film devices. To this end, lithium-ion solid electrolytic substrates, often used for battery technology, offer similar benefits as ionic-liquids, with the added advantage of solid-state compatibility. In this work, the authors explore a lithium-ion solid electrolytic substrate for direct growth of MoS${}_{2}$ by chemical vapor deposition method. A near ideal subthreshold swing around 65 mV/dec with field-effect mobility values of 42-49 cm${}^{2}$V${}^{\ensuremath{-}1}$s${}^{\ensuremath{-}1}$ has been achieved with the devices on as-grown crystal, back-gated by the solid electrolyte.

The development of silicon semiconductor technology has produced breakthroughs in electronics—from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones—by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device performance at the atomic limit, and a synergistic combination of 2D materials with silicon chips promises a heterogeneous platform to deliver massively enhanced potential based on silicon technology. Integration is achieved via three-dimensional monolithic construction of multifunctional high-rise 2D silicon chips, enabling enhanced performance by exploiting the vertical direction and the functional diversification of the silicon platform for applications in opto-electronics and sensing. Here we review the opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems, and also consider the prospects for computational and non-computational applications. Progress in integrating atomically thin two-dimensional materials with silicon-based technology is reviewed, together with the associated opportunities and challenges, and a roadmap for future applications is presented.

Nanohybrids containing graphene and bismuth ferrite have been actively employed as efficient photo-catalysts these days owing to the low rate of charge carrier’s (e−-h+) recombination, moderate surface area with a suitable range of band-gaps. We have synthesized nanohybrids of graphene oxide (GO) and doped BiFe03 using a co-precipitation method and the doping elements were lanthanum and manganese, hence called BLFMO/GO nanohybrids. The surface area of BLFMO [La = 15% increased from 6.8 m2/g (for pure) to 62.68 m2/g (in nanohybrid)]. Also, the bandgap of the BLFMO/GO nanohybrid reduced significantly up to 1.75 eV. The resulting BLFMO/GO nanohybrid represents significantly higher catalytic activity (96% in 30 min) than the pure BiFe03 (30% in 30 min).

Organic field-effect transistors (OFETs) using polymer as the active layer are being intensively developed for flexible electronics including gas sensor. The strategy of polymer blends comprising semiconducting polymer mixed into an insulating polymer matrix has shown great potential in improving the electrical and sensing performance of OFETs. Herein two semiconducting polymers of poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly(9-vinylcarbazole) (PVK) are used to construct a polymer bulk heterojunction, through exploring the atmosphere influence on device characteristics and NO2 sensing performance of the transistors, an in-depth illumination of the underlying sensing mechanism is carried out. Firstly, by using nitrogen (N2) and dry air as carrier gases, the individual device characteristics and sensing performance under certain NO2 concentrations are investigated. It can be observed that O2 has a greater effect on the electrical performance than other atmospheric components, which is different from the previous report of neat P3HT-based device. Specifically, at the high gate voltage, the response of drain current under N2 is more than 2 times higher than that under dry air, and the mobility variation exhibits a 2-fold enhancement. In contrast, at a low gate voltage (0 V) under dry air, the response is 2-fold greater than under N2. Then, the underlying sensing mechanism of these gas sensors consisting of various P3HT fractions in different operating environment is discussed. Finally, the OFET gas sensor with a high sensitivity to NO2 under dry air is obtained, i.e., the highest current sensitivity is ∼12381% for 15 ppm with 50% P3HT, which is more than 30 times higher than that of pure one. This study on gas sensing mechanism of OFET consisting of semiconducting polymer bulk heterojunction can offer novel inspiration to realize high performance OFET and the corresponding gas sensor.

Over the past decades, organic field-effect transistor (OFET) gas sensors have maintained a rapid development. However, the majority of OFET gas sensors show insufficient detection capability towards oxidizing gases such as nitrogen oxide, compared with the inorganic counterpart. In this paper, a new strategy of OFET nitrogen dioxide (NO2) gas sensor, consisting of poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly(9-vinylcarbazole) (PVK) blend, is reported. Depending on the gate voltage, this sensor can operate in two modes at room temperature. Of the two modes exposed to NO2 for 5 min, when the gate voltage is 0 V, the highest NO2 responsivity of this OFET is >20 000% for 30 ppm (≈700% for 600 ppb) with the 1:1 P3HT/PVK blend, it is ≈40 times greater than that with the pure P3HT. The limit of detection of ≈300 ppb is achieved, and there is still room for improvement. While in the condition of −40 V, the response increases by 15 times than that with the pure P3HT. This is the first attempt to improve the OF...

This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorous field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic and extrinsic figures of merit, as well as S-parameters, from different BPFET technologies. Single- and double-stage radio frequency gain amplifiers, are designed at 2.4 GHz using the experimentally-calibrated small-signal BPFET EC. Results show high-gain high-selective BPFET-based amplifiers.

Non-volatile resistive switching, also known as memristor1 effect, where an electric field switches the resistance states of a two-terminal device, has emerged as an important concept in the development of high-density information storage, computing and reconfigurable systems2–9. The past decade has witnessed substantial advances in non-volatile resistive switching materials such as metal oxides and solid electrolytes. It was long believed that leakage currents would prevent the observation of this phenomenon for nanometre-thin insulating layers. However, the recent discovery of non-volatile resistive switching in two-dimensional monolayers of transition metal dichalcogenide10,11 and hexagonal boron nitride12 sandwich structures (also known as atomristors) has refuted this belief and added a new materials dimension owing to the benefits of size scaling10,13. Here we elucidate the origin of the switching mechanism in atomic sheets using monolayer MoS2 as a model system. Atomistic imaging and spectroscopy reveal that metal substitution into a sulfur vacancy results in a non-volatile change in the resistance, which is corroborated by computational studies of defect structures and electronic states. These findings provide an atomistic understanding of non-volatile switching and open a new direction in precision defect engineering, down to a single defect, towards achieving the smallest memristor for applications in ultra-dense memory, neuromorphic computing and radio-frequency communication systems2,3,11. A combination of atomistic imaging and spectroscopy reveals that metal substitution into a sulfur vacancy is the underlying mechanism for resistive switching in transition metal dichalcogenide monolayers.

Numerous fields of science and technology, including healthcare, robotics and bioelectronics, have begun to switch their research direction from developing ‘high-end, high-cost’ tools towards ‘high-end, low-cost’ solutions. Graphene electronic tattoos (GETs), whose fabrication protocol is discussed in this work, are ideal building blocks of future wearable technology due to their outstanding electromechanical properties. The GETs are composed of high-quality, large-scale graphene that is transferred onto tattoo paper, resulting in an electronic device that is applied onto skin like a temporary tattoo. Here, we provide a comprehensive GET fabrication protocol, starting from graphene growth and ending with integration onto human skin. The methodology presented is unique since it utilizes high-quality electronic-grade graphene, while the processing is done by using low-cost and off-the-shelf methods, such as a mechanical cutter plotter. The GETs can be either used in combination with advanced scientific equipment to perform precision experiments, or with low-cost electrophysiology boards, to conduct similar operations from home. In this protocol, we showcase how GETs can be applied onto the human body and how they can be used to obtain a variety of biopotentials, including electroencephalogram (brain waves), electrocardiogram (heart activity), electromyogram (muscle activity), as well as monitoring of body temperature and hydration. With graphene available from commercial sources, the whole protocol consumes ~3 h of labor and does not require highly trained personnel. The protocol described in this work can be readily replicated in simple laboratories, including high school facilities. This protocol describes how to fabricate graphene electronic tattoos (GETs) that offer unique electromechanical properties. The GETs can be used for a variety of applications, including wearables, personalized biosensors and human–computer interfaces.

Hexagonal boron nitride (hBN) has a large bandgap, high phonon energies and an atomically smooth surface absent of dangling bonds. As a result, it has been widely used as a dielectric to investigate electron physics in two-dimensional heterostructures and as a dielectric in the fabrication of two-dimensional transistors and optoelectronic devices. Here we show that hBN can be used to create analogue switches for applications in communication systems across radio, 5G and terahertz frequencies. Our approach relies on the non-volatile resistive switching capabilities of atomically thin hBN. The switches are composed of monolayer hBN sandwiched between two gold electrodes and exhibit a cutoff-frequency figure of merit of around 129 THz with a low insertion loss (≤0.5 dB) and high isolation (≥10 dB) from 0.1 to 200 GHz, as well as a high power handling (around 20 dBm) and nanosecond switching speeds, metrics that are superior to those of existing solid-state switches. Furthermore, the switches are 50 times more efficient than other non-volatile switches in terms of a d.c. energy-consumption metric, which is an important consideration for ubiquitous mobile systems. We also illustrate the potential of the hBN switches in a communication system with an 8.5 Gbit s–1 data transmission rate at 100 GHz with a low bit error rate under 10−10. Resistive switching in atomically thin sheets of hexagonal boron nitride can be used to create analogue switches for applications in communication systems across radio, 5G and terahertz frequencies.

Supercapacitors (SCs) have attracted great attention as renewable energy storage devices due to their high power densities and cost effectiveness. In this work, a one-step method is reported to fabricate the laser scribed SC using laser reduced Polyimide (LRPI) electrodes as a substrate. An Iono-gel polymer electrolyte based on polyvinyl alcohol, potassium hydroxide and 1-Butyl-3-methyl imidazolium Bromide ([Bmim]Br) was utilized because of its wider voltage window, good ionic conductivity and better adhesion with electrode material. The assembled device exhibited an excellent specific capacitance of 2.19 mFcm−2 at a maximum current density of 0.263 mAcm−2. The energy density is measured to be 1.21 μWhcm−2, which is much higher than a usual capacitor. Given these electrochemical properties, a cost-effective one-step method and scalable approach provides a strategy to fabricate lightweight, stretchable and flexible supercapacitors for future microscale energy storage devices i.e., flexible displays, electrical sensors and wearable electronics.

Iron deficiency (ID) is the most prevalent and severe nutritional disorder globally and is the leading cause of iron deficiency anemia (IDA). IDA often progresses subtly symptomatic in children, whereas prolonged deficiency may permanently impair development. Early detection and frequent screening are, therefore, essential to avoid the consequences of IDA. In order to reduce the production cost and complexities involved in building advanced ID sensors, the devices were fabricated using a home-built patterning procedure that was developed and used for this work instead of lithography, which allows for fast prototyping of dimensions. In this article, we report the development of graphene-based field-effect transistors (GFETs) functionalized with anti-ferritin antibodies through a linker molecule (1-pyrenebutanoic acid, succinimidyl ester), to facilitate specific conjugation with ferritin antigen. The resulting biosensors feature an unprecedented ferritin detection limit of 10 fM, indicating a tremendous potential for non-invasive (e.g., saliva) ferritin detection.

Various two-dimensional materials, such as graphene oxide, solution-processed or phase-change transitional metal dichalcogenides (TMDs), degraded black phosphorus and multilayer hexagonal boron nitride (h-BN) [ 1 - 5 ], have been reported to exhibit non-volatile resistance switching (NVRS) phenomenon, in which the resistance can be reversibly switched between a high resistance state (HRS) and a low resistance state (LRS) through external electrical bias and maintained without power supply. Recently, we reported the observation of NVRS in single-layer TMDs and h-BN atomristors (memristor effect in atomically thin nanomaterials) with forming-free characteristic, large on/off current ratio (up to 10 7 ) and fast switching speed (< 15 ns) [ 6 - 8 ]. Here, to investigate the switching mechanisms in the 2D monolayers, we introduced a new electrical characterization method by current sweeping to illustrate the detailed information hidden in the commonly used voltage-sweep curves, showing multiple transition steps in the SET process. Moreover, by varying the SET compliance current in voltage-sweep measurement, multiple resistance states can be obtained with a range of five orders of magnitude. These results provide strong evidence for the previously reported conductive-bridge-like model of 2D atomristors [8] , and enable further applications in multi-bit data storage and analog-like neuromorphic computing.

Since the discovery of graphene, two-dimensional (2D) materials have drawn much attention as a promising candidate in the next-generation electron devices, optoelectronics and bioelectronics1, 2. Over the last few years, researchers have proved the existence of the non-volatile resistance switching (NVRS) behavior in various 2D materials, including graphene oxide, functionalized MoS 2 , partially degraded black phosphorus and multi-layer hexagonal boron-nitride (h-BN), etc.3–6, where the resistance can be switched between a high-resistance state (HRS) and a low-resistance state (LRS) and maintained for a long time without power supply 7. In 2015, Sangwan et al. discovered that grain boundaries in single-layer MoS 2 can produce NVRS based on planar (horizontal) structure8. However, the planar structure without 3D stacking ability has the limitation of low integration density. Therefore, to overcome vertical scaling obstacle in NVRS based on conventional metal-insulator-metal (MIM) structure, it is desired to find out the thinnest materials that can produce the resistance switching behavior based on vertical device structure. Recently, we discovered that NVRS phenomenon is accessible in a variety of single-layer transition metal dichalcogenides (TMDs) and single-layer h-BN in vertical MIM configuration9–12. Compared with other 2D material-based NVRS devices, single-layer h-BN has only one atomic layer and ∼0.33 nm in thickness, which is the thinnest active layer in non-volatile resistance memory. These devices can be collectively labelled as “atomristor”, which means the memristor effect in atomically thin nanomaterials. The TMDs and h-BN atomristors have been studied using a crossbar or a litho-free & transfer-free structure, demonstrating forming-free switching with large on/off ratio (up to 6 orders of magnitude) and low switching voltage (down to 15 dB) up to 100 GHz. The operating frequencies cover the RF, 5G, and mm-wave bands, making this a promising low-power switch for diverse communication and connectivity front-end systems. The results of this work indicate a potential universal resistive switching behavior in 2D monolayers, which is applicable to memory technology, neuromorphic computing, RF switch and flexible electronics.

In this chapter, we demonstrated the application of two-dimensional (2D) monolayer atomic sheets (transition metal dichalcogenides and hexagonal boron nitride) in nonvolatile resistive memory using metal-insulator-metal vertical structure. These devices can be labeled as “atomristor,” which means the memristor effect in atomically thin nanomaterials. Among 2D memory devices, atomristor stands out due to the atomic thinness of the active layer, low switching voltage, forming-free characteristic, large ON/OFF current ratio, and fast switching speed. In the last section, another major application based on atomristor, monolayer MoS2-based radio frequency switch will be presented.

International audience; Non-volatile radio-frequency (RF) switches based on hexagonal boron nitride (hBN) are realized for the first time with low insertion loss (≤ 0.2 dB) and high isolation (≥ 15 dB) up to 110 GHz. Crystalline hBN enables the thinnest RF switch device with a single monolayer (~0.33 nm) as the memory layer owing to its robust layered structure. It affords ~20 dBm power handling, 10 dB higher compared to MoS 2 switches due to its wider bandgap (~6 eV). Importantly, operating frequencies cover the RF, 5G, and mm-wave bands, making this a promising low-power switch for diverse communication and connectivity front-end systems. Compared to other switch technologies based on MEMS, memristor, and phase-change memory (PCM), hBN switches offer a promising combination of non-volatility, nanosecond switching, power handling, high figure-of-merit cutoff frequency (43 THz), and heater-less ambient integration. Our pioneering work suggests that atomically-thin nanomaterials can be good device candidates for 5G and beyond.

Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (fc), is about 10 THz for sub-μm2 switches with favorable scaling that can afford fc above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.

A major challenge for graphene applications is the lack of mass production technology for large-scale and high-quality graphene growth and transfer. Here, a roll-to-roll (R2R) dry transfer process for large-scale graphene grown by chemical vapor deposition is reported. The process is fast, controllable, and environmentally benign. It avoids chemical contamination and allows the reuse of graphene growth substrates. By controlling tension and speed of the R2R dry transfer process, the electrical sheet resistance is achieved as 9.5 kΩ sq-1 , the lowest ever reported among R2R dry transferred graphene samples. The R2R dry transferred samples are used to fabricate graphene-based field-effect transistors (GFETs) on polymer. It is demonstrated that these flexible GFETs feature a near-zero doping level and a gate leakage current one to two orders of magnitude lower than those fabricated using wet-chemical etched graphene samples. The scalability and uniformity of the R2R dry transferred graphene is further demonstrated by successfully transferring a 3 × 3 in2 sample and measuring its field-effect mobility with 36 millimeter-scaled GFETs evenly spaced on the sample. The field-effect mobility of the R2R dry transferred graphene is determined to be 205 ± 36 cm2 V-1 .

Integration of a complementary metal-oxide semiconductor (CMOS) and monolayer graphene is a significant step toward realizing low-cost, low-power, heterogeneous nanoelectronic devices based on two-dimensional materials such as gas sensors capable of enabling future mobile sensor networks for the Internet of Things (IoT). But CMOS and post-CMOS process parameters such as temperature and material limits, and the low-power requirements of untethered sensors in general, pose considerable barriers to heterogeneous integration. We demonstrate the first monolithically integrated CMOS-monolayer graphene gas sensor, with a minimal number of post-CMOS processing steps, to realize a gas sensor platform that combines the superior gas sensitivity of monolayer graphene with the low power consumption and cost advantages of a silicon CMOS platform. Mature 0.18 µm CMOS technology provides the driving circuit for directly integrated graphene chemiresistive junctions in a radio frequency (RF) circuit platform. This work provides important advances in scalable and feasible RF gas sensors specifically, and toward monolithic heterogeneous graphene–CMOS integration generally. The combination of monolayer graphene with a silicon-based CMOS platform results in a monolithically integrated gas sensor. A team led by Deji Akinwande at the University of Texas at Austin developed a graphene-based gas sensing platform that leverages the remarkable gas sensitivity of graphene and the well-established advantages of silicon technology. Using a commercially available 0.18 μm CMOS radio-frequency (RF) circuit, the authors fabricated graphene chemi-resistive junctions atop the CMOS readout circuit, whereby the interaction between gas molecules and graphene can be read as an output frequency while minimizing the number of post-processing steps. The built-in RF functionalities enable a direct wireless connection with the transducer and offer reduced flicker noise, as opposed to direct-current sensors.

Boron nitride's (BN) large band gap does not permit carrier transport at ambient conditions. We show that BN sheets can be exfoliated by functionalization with oxy-groups to introduce additional acceptor and donor energy levels appropriate for energy storage devices. Further, the incorporation of heteroatoms into transition metal sulfides enhances capacitance via Faradic redox reactions and their cyclic stability. The functionalized boron nitride (mK-BN) and Carbon Nanotubes (CNTs) are intertwined with a Zn-doped Cadmium-Sulfide (Zn–CdS) nanostructure to increase the surface area-charge storage. In a supercapacitor application, Zn–CdS/mK-BN/CNT exhibits a 787 F/g specific capacitance (SC) in an aqueous (aq.) electrolyte. Further, the Zn–CdS/mK-BN/CNT was deployed as a cathode material in an asymmetric supercapacitor device (ASC) coupled with an ionic electrolyte (IE), (NHEt3)+(NO3)−, offered a SC of 173 F/g with an approximate 99% stability due to the enhanced charge mobility. The reported functionalization of BN induces additional energy levels making the material ideal for energy storage devices and will directly impact the next-generation of advanced supercapacitor electrode materials.

Tattoo-like epidermal sensors are an emerging class of truly wearable electronics, owing to their thinness and softness. While most of them are based on thin metal films, a silicon membrane, or nanoparticle-based printable inks, we report sub-micrometer thick, multimodal electronic tattoo sensors that are made of graphene. The graphene electronic tattoo (GET) is designed as filamentary serpentines and fabricated by a cost- and time-effective "wet transfer, dry patterning" method. It has a total thickness of 463 ± 30 nm, an optical transparency of ∼85%, and a stretchability of more than 40%. The GET can be directly laminated on human skin just like a temporary tattoo and can fully conform to the microscopic morphology of the surface of skin via just van der Waals forces. The open-mesh structure of the GET makes it breathable and its stiffness negligible. A bare GET is able to stay attached to skin for several hours without fracture or delamination. With liquid bandage coverage, a GET may stay functional on the skin for up to several days. As a dry electrode, GET-skin interface impedance is on par with medically used silver/silver-chloride (Ag/AgCl) gel electrodes, while offering superior comfort, mobility, and reliability. GET has been successfully applied to measure electrocardiogram (ECG), electromyogram (EMG), electroencephalogram (EEG), skin temperature, and skin hydration.

Since the first successful synthesis of graphene just over a decade ago, a variety of two-dimensional (2D) materials (e.g., transition metal-dichalcogenides, hexagonal boron-nitride, etc.) have been discovered. Among the many unique and attractive properties of 2D materials, mechanical properties play important roles in manufacturing, integration and performance for their potential applications. Mechanics is indispensable in the study of mechanical properties, both experimentally and theoretically. The coupling between the mechanical and other physical properties (thermal, electronic, optical) is also of great interest in exploring novel applications, where mechanics has to be combined with condensed matter physics to establish a scalable theoretical framework. Moreover, mechanical interactions between 2D materials and various substrate materials are essential for integrated device applications of 2D materials, for which the mechanics of interfaces (adhesion and friction) has to be developed for the 2D materials. Here we review recent theoretical and experimental works related to mechanics and mechanical properties of 2D materials. While graphene is the most studied 2D material to date, we expect continual growth of interest in the mechanics of other 2D materials beyond graphene.

Recent advances in atomically thin two-dimensional transition metal dichalcogenides (2D TMDs) have led to a variety of promising technologies for nanoelectronics, photonics, sensing, energy storage, and opto-electronics, to name a few. This article reviews the recent progress in 2D materials beyond graphene and includes mainly transition metal dichalcogenides (TMDs) (e.g. MoS2, WS2, MoSe2, and WSe2). These materials are finding niche applications for next-generation electronics and optoelectronics devices relying on ultimate atomic thicknesses. Albeit several challenges in developing scalable and defect-free TMDs on desired substrates, new growth techniques compatible with traditional and unconventional substrates have been developed to meet the ever-increasing demand of high quality and controllability for practical applications. The fabrication of novel 2D TMDs that exhibit exotic functionalities and fundamentally new chemistry is highlighted. And finally, in parallel with the electronics, the considerable effort devoted to using these materials for energy and sensing applications is discussed in detail.

Patterning graphene into nanoribbons (graphene nanoribbons, GNR) allows for tunability in the emerging fields of plasmonic devices in the mid-infrared and terahertz regime. However, the fabrication processes of GNR arrays for plasmonic devices often include a low-throughput electron beam lithography step that cannot be easily scaled to large areas. In this study, we developed a GNR fabrication method using block copolymer (BCP) lithography that takes advantage of the wetting transparency of graphene. One major advantage of this method is that the self-assembled domains of the polystyrene- block -poly(methyl methacrylate) BCP are oriented perpendicularly directly on top of the graphene where they can later serve as an etch mask. Large area (cm 2 scale, 3 μm × 3 μm defect-free area) 13–51 nm wide GNR arrays were successfully fabricated using this scalable protocol. This wetting transparency-assisted GNR fabrication method could be useful for high-throughput production of various plasmonic devices, including biosensors, and photodetectors.

We report the first direct dry transfer of a single-crystalline thin film grown by molecular beam epitaxy. A double cantilever beam fracture technique was used to transfer epitaxial bismuth thin films grown on silicon (111) to silicon strips coated with epoxy. The transferred bismuth films retained electrical, optical, and structural properties comparable to the as-grown epitaxial films. Additionally, we isolated the bismuth thin films on freestanding flexible cured-epoxy post-transfer. The adhesion energy at the bismuth/silicon interface was measured to be ∼1 J/m2, comparable to that of exfoliated and wet transferred graphene. This low adhesion energy and ease of transfer is unexpected for an epitaxially grown film and may enable the study of bismuth’s unique electronic and spintronic properties on arbitrary substrates. Moreover, this method suggests a route to integrate other group-V epitaxial films (i.e., phosphorus) with arbitrary substrates, as well as potentially to isolate bismuthene, the atomic th...

Black phosphorus has been recently suggested as a very promising material for use in 2D field-effect transistors. However, due to its poor stability under ambient conditions, this material has not yet received as much attention as for instance MoS2. We show that the recently demonstrated Al2O3 encapsulation leads to highly stable devices. In particular, we report our long-term study on highly stable black phosphorus field-effect transistors, which show stable device characteristics for at least eight months. This high stability allows us to perform a detailed analysis of their reliability with respect to hysteresis as well as the arguably most important reliability issue in silicon technologies, the bias-temperature instability. We find that the hysteresis in these transistors depends strongly on the sweep rate and temperature. Moreover, the hysteresis dynamics in our devices are reproducible over a long time, which underlines their high reliability. Also, by using detailed physical models for oxide traps...

Graphene has great potential for fabrication of ultrafast opto-electronics, in which relaxation and transport of photoexcited carriers determine device performance. Even though ultrafast carrier relaxation in graphene has been studied vigorously, transport properties of photoexcited carriers in graphene are largely unknown. In this work, we utilize an ultrafast grating imaging technique to measure lifetime (τr), diffusion coefficient (D), diffusion length (L) and mobility (μ) of photoexcited carriers in mono- and multi-layer graphene non-invasively. In monolayer graphene, D∼10,000 cm2/s and μ∼120,000 cm2/V have been observed, both of which decrease drastically in multilayer graphene, indicating that the remarkable transport properties in monolayer graphene originate from its unique Dirac-Cone energy structure. Mobilities of photoexcited carriers measured here are several times larger than the Hall and Field-Effect mobilities reported in literature (

While the odds are that a universal non-volatile memory device is a mirage, there is significant global research on emerging memories such as RRAM regarding their potential as worthy candidates.

Graphene coated with nanoparticles has been used to make wearable light sensors that measure the human pulse and blood oxygen levels from ambient light passing through tissue, offering a potential platform for health-care monitoring. Flexible photosensors based on graphene coated with quantum dots.

Single layer (1L) transition metal dichalcogenides (TMDs) have attracted huge interest because of their peculiar optoelectronic properties and strong excitonic effects[1]. Van der Waals heterostructures, obtained by stacking two 1L-TMDs on top of each other, have been intensively investigated because of their possible applications in electronics and optoelectronics[2]. Of particular interest are type II TMDs heterostructures where the peculiar band alignment leads to a staggered gap (the valence band maximum and the conduction band minumum are in the same layer). The main reason is due to the fact that this kind of band alignment allows an efficient charge separation which is particularly beneficial for photovoltaics and solar cell technology based on atomically thick materials.

We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor-based field-effect transistors, which provides explicit expressions for the drain current, terminal charges, and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi–Dirac statistics coupled with an appropriate field-effect approach. The terminal charge and intrinsic capacitance models are calculated adopting a Ward–Dutton linear charge partition scheme that guarantees charge conservation. It has been implemented in Verilog-A to make it compatible with standard circuit simulators. In order to benchmark the proposed modeling framework we also present experimental DC and high-frequency measurements of a purposely fabricated monolayer MoS2-FET showing excellent agreement between the model and the experiment and thus demonstrating the capabilities of the combined approach to predict the performance of 2DFETs., The authors would like to thank the financial support of Spanish Government under projects TEC2017-89955-P (MINECO/AEI/FEDER, UE), TEC2015-67462-C2-1-R (MINECO), and RTI2018-097876-B-C21 (MCIU/AEI/FEDER, UE). F.P. and D.J. also acknowledge the support from the European Union’s Horizon 2020 Research and Innovation Program under Grant Agreement No. 785219 GrapheneCore2. A.G. acknowledges the funding by the Consejería de Economía, Conocimiento, Empresas y Universidad de la Junta de Andalucía and European Regional Development Fund (ERDF), ref. SOMM17/6109/UGR. E.G.M. gratefully acknowledges Juan de la Cierva Incorporación IJCI-2017-32297 (MINECO/AEI). A.T.-L. acknowledges the FPU program (FPU16/04043). D.A. acknowledges the Army Research Office for partial support of this work, and the NSF NASCENT ERC and NNCI programs.

2D materials have attracted much interest over the past decade in nanoelectronics. However, it was believed that the atomically thin layered materials are not able to show memristive effect in vertically stacked structure, until the recent discovery of monolayer transition metal dichalcogenide (TMD) atomristors, overcoming the scaling limit to sub-nanometer. Herein, the nonvolatile resistance switching (NVRS) phenomenon in monolayer hexagonal boron nitride (h-BN), a typical 2D insulator, is reported. The h-BN atomristors are studied using different electrodes and structures, featuring forming-free switching in both unipolar and bipolar operations, with large on/off ratio (up to 107 ). Moreover, fast switching speed (

Non-volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few-layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX2 , M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS2 /MoS2 ), and an atomically thin insulator (h-BN). These results indicate the universality of the phenomenon in 2D non-conductive materials, and feature low switching voltage, large ON/OFF ratio, and forming-free characteristic. A dissociation-diffusion-adsorption model is proposed, attributing the enhanced conductance to metal atoms/ions adsorption into intrinsic vacancies, a conductive-point mechanism supported by first-principle calculations and scanning tunneling microscopy characterizations. The results motivate further research in the understanding and applications of defects in 2D materials.

Patterned arrays of graphene nanostructures, also referred as graphene metasurfaces, have proven to be capable of efficiently coupling with incident light by surface plasmon resonances. In this work, a new type of graphene metasurfaces with moire patterns using cost-effective and scalable moire nanosphere lithography (MNSL) is demonstrated. A large gradient in feature size (i.e., from sub-200 nm to 1.1 μm) of the graphene nanostructures exists in single metasurfaces. The in-plane quasi-periodic arrangement of the graphene nanostructures can be easily tuned to form a variety of moire patterns. The experimental measurement and numerical simulations show that the graphene moire metasurfaces support tunable and multiband optical responses due the size and shape dependences of surface plasmon resonance modes of graphene nanostructures. It is also demonstrated that the multiband optical responses of graphene moire metasurfaces can be tuned from mid-infrared (MIR) to terahertz (THz) regimes by choosing polystyrene spheres of different sizes for MNSL. These findings provide a cost-effective and scalable strategy to achieve ultrathin functional devices, including multiband light modulators, broadband biosensors, and multiband photodetectors, which feature tunable and multiband responses in wide range of wavelengths from MIR to THz.

A blister test with associated analysis was developed to characterize the traction-separation relations associated with interactions between graphene and a copper substrate to which it had been transferred. Graphene grown by chemical vapor deposition was backed by a photoresist film and transferred to a highly polished copper substrate from its seed copper foil. The graphene/photoresist composite film was then pressurized with deionized water through a hole in the substrate. The blister profiles and normal crack opening displacements (NCOD) were measured by two microscopes with synchronized cameras. Different mixed-mode conditions were achieved by varying the thickness of the backing layers. The measured adhesion energy for the graphene/copper and photoresist/copper interfaces showed a strong dependence on the mode-mix. Cohesive zone models associated with traction-separation relations were then developed to study the damage initiation and crack propagation under various mixed-mode conditions. The numerical solutions for the resistance curves, pressure vs. deflection, and NCOD were in good agreement with measurements. The cohesive zone model was extended to a wider range of mode-mixes by making use of the asperity locking model which had provided a mechanism for the observed toughening effect. The interactions between graphene and copper were found to be stronger in all respects than those associated with photoresist and copper. Because the monolayer graphene was sandwiched between photoresist and copper, this result suggests that graphene was not transparent to interactions between photoresist and copper, but opaque. The use of pressure could provide another approach to transfer large-scale graphene.

We have achieved 140-nm channel length graphene thin-film transistors (TFTs) on flexible glass with a 95-GHz intrinsic cutoff frequency and greater than 30-GHz intrinsic power frequency after standard de-embedding. The flexible glass substrate offers subnanometer surface smoothness as well as high thermal conductivity, 1 W/ $\textrm {m}\,\cdot \, \textrm {K}$ , which can prevent thermomechanical failure, which is a limitation of plastic and rubber substrates. In addition, we developed a flexible 60-nm polyimide thin film as gate dielectric with low surface roughness less than 0.35 nm for optimal carrier transport and facilitate edge-injection contacts for low contact resistance. The maximum electron (hole) mobility is 4540 (1100) cm2/ $\textrm {V}\cdot \textrm {s}$ , and the extracted contact resistance in the electron (hole) branch is 1140 (720) $\Omega \cdot \mu \text{m}$ . The intrinsic cutoff frequency is 196% higher than our previous results on polymeric substrates. Importantly, the experimental saturation velocity of the graphene TFT is the highest for any flexible transistor on any material system reported so far.

Black phosphorus (BP) has attracted rapidly growing attention for high speed and low power nanoelectronics owing to its compelling combination of tunable bandgap (0.3 to 2 eV) and high carrier mobility (up to ∼1000 cm(2)/V·s) at room temperature. In this work, we report the first radio frequency (RF) flexible top-gated (TG) BP thin-film transistors on highly bendable polyimide substrate for GHz nanoelectronic applications. Enhanced p-type charge transport with low-field mobility ∼233 cm(2)/V·s and current density of ∼100 μA/μm at VDS = -2 V were obtained from flexible BP transistor at a channel length L = 0.5 μm. Importantly, with optimized dielectric coating for air-stability during microfabrication, flexible BP RF transistors afforded intrinsic maximum oscillation frequency fMAX ∼ 14.5 GHz and unity current gain cutoff frequency fT ∼ 17.5 GHz at a channel length of 0.5 μm. Notably, the experimental fT achieved here is at least 45% higher than prior results on rigid substrate, which is attributed to the improved air-stability of fabricated BP devices. In addition, the high-frequency performance was investigated through mechanical bending test up to ∼1.5% tensile strain, which is ultimately limited by the inorganic dielectric film rather than the 2D material. Comparison of BP RF devices to other 2D semiconductors clearly indicates that BP offers the highest saturation velocity, an important metric for high-speed and RF flexible nanosystems.

We explored a support-free method for transferring large area graphene films grown by chemical vapor deposition to various fluoric self-assembled monolayer (F-SAM) modified substrates including SiO2/Si wafers, polyethylene terephthalate films, and glass. This method yields clean, ultrasmooth, and high-quality graphene films for promising applications such as transparent, conductive, and flexible films due to the absence of residues and limited structural defects such as cracks. The F-SAM introduced in the transfer process can also lead to graphene transistors with enhanced field-effect mobility (up to 10,663 cm(2)/Vs) and resistance modulation (up to 12×) on a standard silicon dioxide dielectric. Clean graphene patterns can be realized by transfer of graphene onto only the F-SAM modified surfaces.

Here we present a very fast, selective mechanical approach for transferring graphene with low levels of copper contamination from seed wafers on which it was grown to target wafers for very large scale integration (VLSI) electronics. We found that graphene/copper or copper/silicon oxide delamination paths could be selected by slow and faster separation rates, respectively. Thus graphene can be transferred to a target wafer, either exposed or protected by the seed copper layer, which can later be removed by etching. Delamination paths were identified by SEM and Raman spectroscopy. The sheet resistance of the graphene produced by the two approaches was slightly higher than graphene transferred by a PMMA wet-transfer process, indicating reduced impurity doping, and the variation in the sheet resistance values was much lower. Copper contamination levels, quantitatively established by TOF-SIMS, were several orders of magnitude lower than the values for PMMA assisted transfer. In addition, we demonstrated that top-gated transistor devices from our mechanical, delamination transferred graphene exhibited superior transistor behavior to PMMA-assisted wet transfer graphene. The adhesion energy, strength and range of the interactions were quantitatively determined by nonlinear fracture analyses, and suggest that the roughness of the interface between graphene and copper plays an important role with implications for improvements in manufacturing processes.

Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds. An intrinsic cutoff frequency of 5.6 GHz is achieved and analog circuits are realized. Devices are mechanically robust for 10,000 bending cycles.

The isolation of graphene in 2004 from graphite was a defining moment for the "birth" of a field: two-dimensional (2D) materials. In recent years, there has been a rapidly increasing number of papers focusing on non-graphene layered materials, including transition-metal dichalcogenides (TMDs), because of the new properties and applications that emerge upon 2D confinement. Here, we review significant recent advances and important new developments in 2D materials "beyond graphene". We provide insight into the theoretical modeling and understanding of the van der Waals (vdW) forces that hold together the 2D layers in bulk solids, as well as their excitonic properties and growth morphologies. Additionally, we highlight recent breakthroughs in TMD synthesis and characterization and discuss the newest families of 2D materials, including monoelement 2D materials (i.e., silicene, phosphorene, etc.) and transition metal carbide- and carbon nitride-based MXenes. We then discuss the doping and functionalization of 2D materials beyond graphene that enable device applications, followed by advances in electronic, optoelectronic, and magnetic devices and theory. Finally, we provide perspectives on the future of 2D materials beyond graphene.

Recently, various two-dimensional materials have been reported to exhibit non-volatile resistance switching phenomenon. The atomristors, featuring memristor effect in atomically thin nanomaterials such as monolayer transition metal dichalcogenides and hexagonal boron nitride, have drawn much attention due to the extremely thin active layer thickness with the advantages of forming-free characteristic, large on/off resistance ratio and fast switching speed. To investigate the switching mechanisms in the 2D monolayers, we introduced an electrical characterization method by current sweeping to illustrate the detailed information hidden in the commonly used voltage-sweep curves. Multiple transition steps have been observed in the SET process of MoS2-based resistance switching devices. The different behaviors of transition steps were attributed to the number of defects or vacancies associated with the switching phenomenon, which is consistent with the previously reported conductive-bridge-like model for 2D atomristors. This work provides an approach using current sweeping to precisely characterize the resistance switching effect and inspires further research to optimize the defect distribution in 2D materials for the applications in multi-bit non-volatile memory and neuromorphic computing.

Currently, superconductivity in two-dimensional (2D) materials is a hot topic of research owing to their enormous potential applications. We have observed peculiar magnetic meissner effect in 2D Nb2C MXene leading to signatures of superconductivity in the material with an onset transition temperature of 12.5 K. Systematically optimized chemical etching process of bulk Nb2AlC MAX phase led to the formation of 2D Nb2C MXene as confirmed using scanning electron microscope (SEM) and X-ray diffraction (XRD) indicating a significant increase in the c-lattice parameter from 13.83A to 22.72A. The Meissner effect and its unusual magnetic nature is observed using superconducting quantum interference device (SQUID: Quantum Design). Fittings of experimentally obtained lower and upper critical fields as a function of temperature to the Ginzburg-Landau (GL) theory confirms possibility of presence of type-II superconductivity in our Nb2C samples. This peculiar magnetic behaviour, observed in as-synthesized Nb2C MXene in powder form is intrinsic property of our sample. It is to be noted that we have tried to measure the transport properties of our sample but due to its powdered nature, this was not possible. We insist that this work is a significant advancement in the field of magnetism and superconductivity in 2D MXene which may be explored further to determine superconductivity by measuring the transport properties in future.