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Large-signal model of 2DFETs : compact modeling of terminal charges and intrinsic capacitances
- Source :
- Dipòsit Digital de Documents de la UAB, Universitat Autònoma de Barcelona, npj 2D Materials and Applications, Vol 3, Iss 1, Pp 1-7 (2019), npj 2D Materials and Applications, Digibug. Repositorio Institucional de la Universidad de Granada, instname
- Publication Year :
- 2019
-
Abstract
- We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor-based field-effect transistors, which provides explicit expressions for the drain current, terminal charges, and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi–Dirac statistics coupled with an appropriate field-effect approach. The terminal charge and intrinsic capacitance models are calculated adopting a Ward–Dutton linear charge partition scheme that guarantees charge conservation. It has been implemented in Verilog-A to make it compatible with standard circuit simulators. In order to benchmark the proposed modeling framework we also present experimental DC and high-frequency measurements of a purposely fabricated monolayer MoS2-FET showing excellent agreement between the model and the experiment and thus demonstrating the capabilities of the combined approach to predict the performance of 2DFETs.<br />The authors would like to thank the financial support of Spanish Government under projects TEC2017-89955-P (MINECO/AEI/FEDER, UE), TEC2015-67462-C2-1-R (MINECO), and RTI2018-097876-B-C21 (MCIU/AEI/FEDER, UE). F.P. and D.J. also acknowledge the support from the European Union’s Horizon 2020 Research and Innovation Program under Grant Agreement No. 785219 GrapheneCore2. A.G. acknowledges the funding by the Consejería de Economía, Conocimiento, Empresas y Universidad de la Junta de Andalucía and European Regional Development Fund (ERDF), ref. SOMM17/6109/UGR. E.G.M. gratefully acknowledges Juan de la Cierva Incorporación IJCI-2017-32297 (MINECO/AEI). A.T.-L. acknowledges the FPU program (FPU16/04043). D.A. acknowledges the Army Research Office for partial support of this work, and the NSF NASCENT ERC and NNCI programs.
- Subjects :
- Intrinsic capacitance
FOS: Physical sciences
02 engineering and technology
Large-signal model
Applied Physics (physics.app-ph)
Topology
01 natural sciences
Capacitance
law.invention
lcsh:Chemistry
law
0103 physical sciences
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Hardware_INTEGRATEDCIRCUITS
lcsh:TA401-492
General Materials Science
Two-dimensional semiconductors
Drain current models
010302 applied physics
Physics
Charge conservation
Condensed Matter - Mesoscale and Nanoscale Physics
business.industry
Mechanical Engineering
Transistor
Charge (physics)
General Chemistry
Physics - Applied Physics
021001 nanoscience & nanotechnology
Condensed Matter Physics
High frequency measurements
Large signal modeling
Semiconductor
Terminal (electronics)
lcsh:QD1-999
Mechanics of Materials
Benchmark (computing)
lcsh:Materials of engineering and construction. Mechanics of materials
Circuit compatible models
Circuit simulators
0210 nano-technology
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Dipòsit Digital de Documents de la UAB, Universitat Autònoma de Barcelona, npj 2D Materials and Applications, Vol 3, Iss 1, Pp 1-7 (2019), npj 2D Materials and Applications, Digibug. Repositorio Institucional de la Universidad de Granada, instname
- Accession number :
- edsair.doi.dedup.....34ab789db6e2ea49cebc714a67af951f