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Thinnest Nonvolatile Memory Based on Monolayer h-BN
- Source :
- Advanced materials (Deerfield Beach, Fla.). 31(15)
- Publication Year :
- 2018
-
Abstract
- 2D materials have attracted much interest over the past decade in nanoelectronics. However, it was believed that the atomically thin layered materials are not able to show memristive effect in vertically stacked structure, until the recent discovery of monolayer transition metal dichalcogenide (TMD) atomristors, overcoming the scaling limit to sub-nanometer. Herein, the nonvolatile resistance switching (NVRS) phenomenon in monolayer hexagonal boron nitride (h-BN), a typical 2D insulator, is reported. The h-BN atomristors are studied using different electrodes and structures, featuring forming-free switching in both unipolar and bipolar operations, with large on/off ratio (up to 107 ). Moreover, fast switching speed (
- Subjects :
- Materials science
business.industry
Mechanical Engineering
Insulator (electricity)
02 engineering and technology
Memristor
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
law.invention
Non-volatile memory
Scaling limit
Nanoelectronics
Mechanics of Materials
law
Printed electronics
Electrode
Monolayer
Optoelectronics
General Materials Science
0210 nano-technology
business
Subjects
Details
- ISSN :
- 15214095
- Volume :
- 31
- Issue :
- 15
- Database :
- OpenAIRE
- Journal :
- Advanced materials (Deerfield Beach, Fla.)
- Accession number :
- edsair.doi.dedup.....c681c8aadaaa4e6370799d94a83538ef