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Understanding of multiple resistance states by current sweeping in MoS2-based non-volatile memory devices
- Source :
- Nanotechnology. 31:465206
- Publication Year :
- 2020
- Publisher :
- IOP Publishing, 2020.
-
Abstract
- Recently, various two-dimensional materials have been reported to exhibit non-volatile resistance switching phenomenon. The atomristors, featuring memristor effect in atomically thin nanomaterials such as monolayer transition metal dichalcogenides and hexagonal boron nitride, have drawn much attention due to the extremely thin active layer thickness with the advantages of forming-free characteristic, large on/off resistance ratio and fast switching speed. To investigate the switching mechanisms in the 2D monolayers, we introduced an electrical characterization method by current sweeping to illustrate the detailed information hidden in the commonly used voltage-sweep curves. Multiple transition steps have been observed in the SET process of MoS2-based resistance switching devices. The different behaviors of transition steps were attributed to the number of defects or vacancies associated with the switching phenomenon, which is consistent with the previously reported conductive-bridge-like model for 2D atomristors. This work provides an approach using current sweeping to precisely characterize the resistance switching effect and inspires further research to optimize the defect distribution in 2D materials for the applications in multi-bit non-volatile memory and neuromorphic computing.
- Subjects :
- Materials science
Bioengineering
02 engineering and technology
Memristor
010402 general chemistry
01 natural sciences
Nanomaterials
law.invention
law
Monolayer
General Materials Science
Electrical and Electronic Engineering
business.industry
Mechanical Engineering
Process (computing)
General Chemistry
021001 nanoscience & nanotechnology
0104 chemical sciences
Characterization (materials science)
Active layer
Non-volatile memory
Neuromorphic engineering
Mechanics of Materials
Optoelectronics
0210 nano-technology
business
Subjects
Details
- ISSN :
- 13616528 and 09574484
- Volume :
- 31
- Database :
- OpenAIRE
- Journal :
- Nanotechnology
- Accession number :
- edsair.doi...........8e9deb9e3834ec2ee40babb3b884a0fc