Understanding of multiple resistance states by current sweeping in MoS2-based non-volatile memory devices

MLA

Jack C. Lee, et al. “Understanding of Multiple Resistance States by Current Sweeping in MoS2-Based Non-Volatile Memory Devices.” Nanotechnology, vol. 31, Aug. 2020, p. 465206. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........8e9deb9e3834ec2ee40babb3b884a0fc&authtype=sso&custid=ns315887.

APA

Jack C. Lee, Deji Akinwande, Xiaohan Wu, & Ruijing Ge. (2020). Understanding of multiple resistance states by current sweeping in MoS2-based non-volatile memory devices. Nanotechnology, 31, 465206.

Chicago

Jack C. Lee, Deji Akinwande, Xiaohan Wu, and Ruijing Ge. 2020. “Understanding of Multiple Resistance States by Current Sweeping in MoS2-Based Non-Volatile Memory Devices.” Nanotechnology 31 (August): 465206. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........8e9deb9e3834ec2ee40babb3b884a0fc&authtype=sso&custid=ns315887.