Search

Investigates the formation of p[sub +]n junctions by ion implantation and laser annealing. Presentation of the implants and anneal regimes; Effect of rapid thermal annealing on boron implanted silicon pre-amorphized samples; Role of laser annealing in dopant activation and anomalous diffusion suppression.

Describes the fabrication of titanium (Ti)-silicided shallow n[sup +]p junction by phosphorus ion implantation in amorphous-silicon/Ti bilayer thin film. Application of rapid thermal annealing with post-conventional furnace annealing treatment; Facilitation of silicidation and damage annihilation; Crystallization of titanium silicide.

Details the formation of shallow p[sup +]n junctions by implanting BF[sup +][sub 2] ions into thin polycrystalline silicon films and subsequent annealing. Occurrence of an anomalous boron diffusion; Effect of silicidation on the junction profile; Factor attributed for the large boron redistribution.