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β-Ga2O3, a promising ultra-wide bandgap material for future high-power electronics and deep-ultraviolet optoelectronics applications, has drawn tremendous attention in recent years due to its wide bandgap of ~ 4.8 eV, high breakdown electric field, and availability of substrates. However, the reported etch behavior of β-Ga2O3 and the quality of etched surfaces, as well as the associated interface characteristics, could limit the performance of β-Ga2O3 devices. In this article, the etchings of β-Ga2O3, including regular wet etching, photoelectrochemical etching (PEC), reactive ion etching (RIE) and metal-assisted chemical etching (MacEtch), are reviewed. A comparison of the etch rate, orientation dependence, aspect ratio, etching mechanism, and surface quality for each of these etching methods is presented and the step-by-step reactions in PEC and MacEtch are proposed to elucidate the etch mechanism. The challenges for these etching techniques for β-Ga2O3 are discussed.

Well isolated 72 nm pitch hexagonal honeycomb magnetic tunneling junction (MTJ) array with about 45 nm MgO CD was successfully fabricated on a DRAM platform by using mature DRAM array patterning solution with self-aligned double patterning technology and proposed triple hard mask scheme. The 72 nm pitch MTJ array had an equivalent cell size as small as $0.0044~\mu \text{m}$ 2, the world’s smallest pitch size and cell size for industrial MTJ array to our knowledge. The hexagonal array geometry offered considerably merit for storage density enhancement and MTJ etch convenience. A reactive ion etch (RIE) and ion beam etch (IBE) combined MTJ etching solution was adopted to optimize pillar isolation and mitigate metallic re-deposition and etch damage. Perpendicular magnetic anisotropy was maintained in MTJ array; however, free layer coercivity was smaller than expected, indicating the existence of etch damage or fringe magnetic field interaction. Potential challenges for the chip integration of high-density hexagonal MTJ array are also discussed.

The enhanced surface area of silicon nanotexture is an important metric for solar cell integration as it affects multiple properties including optical reflectance, dopant diffusion, and surface recombination. Silicon nanotexture is typically characterized by its surface-area-to-projected-area ratio or enhanced area factor (EAF). However, traditional approaches for measuring EAF provide limited statistics, making correlation studies difficult. In this article, silicon's dominant ultraviolet reflectance peak, R(E2), which is very sensitive to surface etching, is applied to EAF spatial mapping. A clear decay correlation between R(E2) and EAF is shown for multiple textures created using reactive ion etching and metal catalyzed chemical etching. This correlation is applied to R(280 nm) reflectance mapping to yield accurate, high-resolution full-wafer EAF spatial mapping of silicon nanotextures. R(280 nm) mapping is also shown to be sensitive enough to correlate the impact of nanotexture spatial variation on post-diffusion sheet resistance. Finite-difference time-domain simulations of several nanoscale pyramid textures confirm a decay band for R(E2) versus EAF, consistent with our measurements. We suggest that R(E2) mapping may prove useful for other silicon nanotexture properties and applications where EAF is important.

The kinetics of reactive ion etching of Si and SiO2 in the plasma of a high-frequency (13.56 MHz) inductive discharge in a CF4 + O2 mixture in the range of input power of 200–600 W (0.02–0.06 W/cm3) is studied. The key plasma-chemical processes that form stationary electrophysical parameters and composition of the gas phase are identified (a), and the flux densities of neutral and charged particles on the treated surface are determined (b) with the combined use of plasma diagnostics by Langmuir probes and 0-dimensional (global) plasma modeling. It is found that the dominant etching mechanism for both materials is an ion-stimulated chemical reaction proceeding in the kinetic mode and limited by the fluorine flux. It is shown that the decrease in the effective probability of interaction in Si/SiO2 + F systems with an increase in the input power and gas pressure may be due to heterogeneous processes with the participation of oxygen atoms.

In this work, thermally evaporated aluminum (Al) was used as hardmask (HM) to obtain silicon microchannels (SiMCs), using an Inductively Coupled Plasma - Reactive Ion Etching (ICP-RIE) system, in SF6/Ar gas mixture environment. The channel depth must be greater than $50~\mu \text{m}$ , with a high aspect ratio. For this, Al HM lines were defined by photolithography and by Al wet etching on a silicon substrate. To improve the resistance against the ICP-RIE etching process, the Al HMs were treated with four different conditions: i) Al HM without treatment step (control sample); ii) with plasma nitridation (AlN/Al structure); iii) with thermal annealing (annealed Al film); iv) with plasma nitridation and annealing (annealed AlN/Al structure). After 100 min of ICP-RIE etching process, SiMC with depths of $90.6~\mu \text{m}$ , $95~\mu \text{m}$ , $91.2~\mu \text{m}$ , and $109~\mu \text{m}$ , respectively, were measured using a scan profiler system. As the main result, the annealed AlN/Al structure presented a high resistance against the ICP-RIE etching for 100 minutes. Furthermore, Scanning Electron Microscopy (SEM) images indicate an etch uniformity on the walls and bottom of the channels for all the samples. This parameter is a mandatory requirement to obtain the integrated microchannel liquid-cooling technology for heat sinks in photovoltaic cells and Complementary Metal-Oxide-Semiconductor microprocessors. [2021-0020]

Using a newly developed edge-support heat treatment method of polyimide, self-standing graphite thin films (GTFs) with a frame were prepared. The graphite basal plane in the GTF was oriented in the direction of the film surface, resulting in GTFs with high quality, large area, and a uniform thickness of 50–120 nm. The thickness distribution (3σ) with an area of 25 mm × 25 mm and a thickness of 54 nm sample was 5.17 nm (measurement area 7.8 mm × 10.4 mm). The electric conductivity of a similarly prepared sample was 1.81 × 104 S/cm. The Young's modulus and ultimate tensile strength of a 60-nm-thick GTF were 1.02 × 102 and 5.34 GPa, respectively. Approximately 50 nm thick GTF samples were thinned by reactive ion etching using oxygen to fabricate a thickness between 10 and 20 nm. A film with an area of 10 mm × 10 mm and thickness of 16.7 nm exhibited a 3σ value of 1.80 nm which means that the thickness difference corresponds to 5 layers of graphite. The conductivity of a 16.2-nm-thick GTF was 1.79 × 104 S/cm. These results indicate that the etching proceeded uniformly. The proposed top-down method is an industrially superior method that overcomes the drawbacks of conventional bottom-up methods.

Blazed gratings are widely used in optical detection devices with the unique property of concentration of light energy to a desired diffraction order. However, traditional substrates for fabricating blazed gratings are easily damaged with the wear and tear in long-term usage under harsh conditions. Here, we propose the fabrication of blazed gratings on sapphire with high mechanical stability by femtosecond laser lithography combined with subsequent reactive ion etching (RIE). Various sapphire blazed gratings with periods from 2 μm to 10 μm and heights from 260 nm to 2 μm were realized to concentrate light energy (wavelengths of 405 nm, 532 nm and 633 nm) to different diffraction orders (1st, 2nd, and 3rd). The results provide great insights for the construction of micro-optical devices that have potential applications under harsh conditions.

In this work, structure designs and the corresponding energy loss analysis are conducted to achieve the high-efficiency n-type rear-junction solar cells with polysilicon passivated contact. We focus on the front-side structure design of solar cells, considering that the primary efficiency loss of the conventional n-type polysilicon passivated contact cells with boron-diffusion emitter is from the front side. A well-designed rear-junction solar cell with front localized n-type and rear full-area p-type polysilicon passivated contacts is expected to overcome these problems. However, the efficiency of rear-junction solar cells is sensitive to the front-side electrode contact resistivity. To accurately assess the practically achievable efficiency that the current technology can reach, we develop a simple modified TLM with wet-chemical etching to measure the contact resistivity of the n-type polysilicon contact. This method does not require relatively expensive photolithography and reactive ion etching tools and is easy to be used. When the contact resistivity of the front-side localized n-type polysilicon contact reaches 0.002 Ω·cm2 with a saturation current density of ~10 fA/cm2 in the front-side un-diffused area, the efficiency of the rear-junction n-type solar cell is expected to be ~26%, showing its potential for application in mass-production of high-efficiency crystalline silicon solar cells.

In this study, the deposition parameters of the SU8 2000.5 negative photoresists have been investigated and optimized for the photolithographic technique. Then, applied the inductive coupled plasma reactive ion etching (ICP RIE) to produce V-shaped groove diffraction grating on a silicon substrate. Spin coater (speed: 1000 rpm) was used to coat the photoresist over the Si substrate. The observed photoresist film thickness was measured by ellipsometry and found to be 800 nm. Interestingly, the film exhibited some stability with increasing the spin speed. The thermogravimetric analysis was used to optimize the baking temperature which was found to be ~105 °C. Contrast curves were obtained experimentally and used to optimize the exposure energy along with the images obtained from the field emission scanning electron microscopy (FESEM). The optimized energy fluence was found to be 17 mJ/cm2. It was interesting to observe that the thickness of the photoresists film was increasing with the elevation of the exposure energy fluence. The FESEM images were used to optimize the ICP RIE etching process and the best etching conditions for the Si substrate were ICP power: 150 W, bias power: 100 W, and SF6 gas flow rate: 32 SCCM (standard cubic centimeters per minute), O2 gas flow: 8 SCCM, and Ar gas flow of 8 SCCM. It is worth to mention that well-defined V-shaped grooves were observed with a depth of 2 μm under the same experimental conditions.

The zinc blend nonlinear crystal of zinc telluride (ZnTe) is currently one of the most commonly used electro-optical material for terahertz (THz) probe and imaging. We report herein how to engineer the surface behavior of a ZnTe single crystal to design subwavelength structures (SWSs) for enhancing ultrabroadband transmission. Polystyrene (PS) nanoparticle monolayers with a maximum coverage of 85.2% were produced on the ZnTe crystal by an eccentric spin-coating technique combined with surface wettability engineering. Subsequently, the well-defined conical SWS arrays were fabricated on the ZnTe crystal by reactive ion etching over the PS monolayer template, with the size of the SWS arrays customized by optimizing the etching process. Finally, we demonstrated ultrabroadband antireflection on the surface structured ZnTe crystals in the visible-near-infrared, infrared, and terahertz regions with transmittance increase of 11.6%, 10.0%, and 24.8%, which are attributed to the decrease of surface Fresnel reflection by SWS. Notably, in 0.2-1.0 THz, the transmittance reached over 70%. Our work provides a new strategy to enhance the THz generation efficiency and detection sensitivity based on ZnTe crystals by surface engineering.

The kinetics of reactive ion etching of an Si, SiO2, and Si3N4 in the C4F8 + O2 + Ar mixture with a varied C4F8/O2 mixing ratio under the conditions of an rf inductive discharge (13.56 MHz) is investigated. Using the methods of plasma diagnostics and simulation, the data on the effect of the initial mixture’s composition on (a) the parameters of the electronic and ionic components of plasma and (b) the concentrations and densities of the fluxes of neutral species are obtained. It is established that nonmonotonic (with the maximum at ∼15% O2) changes in the etching rates for all three materials with an increasing O2 fraction in the mixture are provided by an increase in the atomic fluorine flux density with a simultaneous decrease in the effective probability of a heterogeneous chemical reaction with them. It is demonstrated that the behavior of the latter parameter does not reflect the changes in the kinetics of polymerization on the treated surface; however, this can be due to the heterogeneous processes involving oxygen atoms.

High-quality gallium nitride etching is highly desirable in electronic device fabrications. For the GaN base devices, the electronic properties largely depended on the etching induced surface damages. To overcome this, a controllable GaN etching method was developed using inductively coupled plasma reactive ion etching (ICP-RIE) by controlling radio frequency (RF) power, and DC bias. The etching rate, DC bias, and root-mean-square surface roughness were measured as a function of bias power under different RF, 40 and 13.56 MHz. The effects of ICP power and chlorine to argon percentage were systematically studied. An extremely slow etching rate and low-damage surface were achieved by reducing DC bias power to 25 W under RF 40 MHz. Ni|Au Schottky diodes were fabricated and characterized. The diode fabricated on the 40-MHz RF etching GaN surface has a much lower ideality factor and higher barrier height than non-etched GaN and RF 13.56 MHz etching GaN.

Etched-and-regrown GaN pn-diodes capable of high breakdown voltage (1610 V), low reverse current leakage (1 nA = 6 $\mu \text{A}$ /cm2 at 1250 V), excellent forward characteristics (ideality factor ~1.6), and low specific on-resistance (1.1 $\text{m}\Omega $ .cm2) were realized by mitigating plasma etch-related defects at the regrown interface. Epitaxial ${n}$ -GaN layers grown by metal-organic chemical vapor deposition on free-standing GaN substrates were etched using inductively coupled plasma etching (ICP), and we demonstrate that a slow reactive ion etch (RIE) prior to ${p}$ -GaN regrowth dramatically increases diode electrical performance compared to wet chemical surface treatments. Etched-and-regrown diodes without a junction termination extension (JTE) were characterized to compare diode performance using the post-ICP RIE method with prior studies of other post-ICP treatments. Then, etched-and-regrown diodes using the post-ICP RIE etch steps prior to regrowth were fabricated with a multi-step JTE to demonstrate kV-class operation.

The optical performance of fused silica optics used in high-power lasers is known to depend not only on their surface damage resistance, but also on their surface quality. Previous studies have shown that good fused silica damage performance and surface quality can be achieved by the use of reactive ion etching (RIE), followed by HF-based wet shallow etching (3 μm). In this study, two kinds of HF-based etchants (aqueous HF and HF/NH4F solutions) were employed to investigate the effect of HF-based etching on the optical performance of reactive-ion-etched fused silica surfaces at various HF-based shallow etching depths. The results showed that the addition of NH4F to HF solution makes it possible to produce a high-quality optical surface with a high laser-induced damage threshold, which is strongly associated with the surface roughness and fluorescence defect density. Additionally, changing the HF-based etching depth over the range from 1 μm to 3 μm can affect the surface damage resistance and absorption performance of RIE-treated fused silica. The light-scattering results indicate that the point defect density plays an important role in the determination of the HF-based etching depth. Understanding these trends can enable the advantages of the combined technique of RIE and HF-based etching during the fabrication of high-quality fused silica optics.

The combination of microstructures and nanostructures has broad application prospects. However, most existing methods are oriented to fabricating microstructures and nanostructures separately, and the fabrication of nanostructures on a microstructured surface at the wafer level is rarely studied. In this work, a new method of fabricating large-area high aspect ratio nano-cylinders on micro-pillars based on a colloidal crystal mask is proposed. An experimental device for stripping and draining was designed to create a polystyrene colloidal crystal mask. Together with reactive-ion etching and metal-assisted chemical etching, high aspect ratio nano-cylinders on micro-pillars with controllable size were obtained on a 4-inch silicon wafer. Wetting tests were performed on four groups of fabricated structures of different sizes, and the results showed that all samples were superhydrophobic. Thus, a method for fabricating uniform, size-controllable, large-area high aspect ratio nano-cylinders on micro-pillars with great potential as a superhydrophobic engineering material is proposed.

In this paper, we investigate the kinetics and mechanisms of reactive-ion etching of Si and SiO2 in the plasma of an HBr + O2 mixture with a variable initial composition under conditions of the high-frequency (13.56 MHz) inductive discharge. In the experimental and theoretical (model) analysis of the plasma parameters, the key plasma-chemical processes that form the stationary composition of the gas phase are identified and the densities of active particle fluxes onto the surface under processing are determined. It is found that the increase in the O2 concentration in the plasma-forming mixture is accompanied by a decrease in the kinetic coefficients (probability of effective interaction and etching yield) that characterize the heterogeneous stages of the etching process. It is assumed that the main mechanism of this effect is the oxidation of SiBrx etching products to low volatile compounds of the SiBrxOy type.

We present the nanofabrication and transport properties of single silicon nanowires (NWs) having mean widths in the range from sub-30 to 500 nm. Hall effect measurements are undertaken in the magnetic fields of 14 T at 300 K. The NWs are defined by electron-beam lithography (EBL) using the negative tone resist hydrogen silsesquioxane (HSQ) as a mask for reactive ion etching (RIE). Silicon NWs are patterned on nonuniform highly doped n-type silicon-on-insulator (SOI) substrates. The doping profile has been observed to show a significant effect on the NW electrostatics, which in turn influences the contact and transport properties of the NWs. For the formation of Hall electrodes, we have employed an angled substrate evaporation technique, where the NW itself is used as a shadow mask and an intimate sidewall contact has been formed. The Hall electrodes are not opposite to each other in this case; therefore, the longitudinal resistance pickup had to be considered when extracting the Hall signal of the NW. The mobility of these NWs is discussed. For the narrowest 40-nm-wide silicon NW, the obtained value of mobility is 292 ± 6 cm2/Vs and, for the blanket, nonpatterned device layer, it is 100 ± 0.1 cm2/Vs. The effective mobility increases as the width of the NWs decreases. This is attributed to the reduced dimensionality of the electron transport in the NWs. Both the electrical and effective thicknesses of the NW change at small physical width, which results in enhanced electron transport within the channel and enhances the value of the measured Hall signal.

A relief on the surface of GaN previously released from the growth substrate is formed by a combined method in which reactive ion etching is used in combination with liquid etching (in KOH or hydrochloric-acid solutions). The dependence of obtained relief on the sequence of operations used is studied. It is shown that etching in a KOH solution followed by reactive ion etching provides the appearance of truncated hollow cones on the surface. In experiments, the ability of a hydrochloric-acid solution for etching exclusively GaN relief elements formed by reactive ion etching of the surface is also found. As a result, reactive ion etching of the sample followed by immersion into hydrochloric acid forms objects of cylindrical shape on its surface transforming at the base into conical or strongly distorted pyramidal structures. The appearance of this relief can be explained by the predominance of the chemical component in reactive ion etching with increasing distance from the sample surface. Further optimization of the relief parameters obtained as a result of combined etching is possible by varying the modes of operation under use.

The article deals with the synthesis of silicon nanowires by the method of metal-assisted chemical etching (MACE). The purpose of this work is to use in light sensors silicon nanowires that synthesized by the MACE. To achieve this goal, it was necessary to synthesize silicon nanowires by the MACE and to study their structural features, to obtain diode structures based on silicon nanowires and to study their sensitivity to visible radiation, to establish the influence of technological parameters of the MSHT process on the sensitivity of photo sensors and sensors. Today, nanostructures are obtained by the method of reactive ion etching, electrochemical etching and plasma implantation. However, most of these methods require sophisticated process equipment. Metal-assisted chemical etching (MACE) method is very promising for nanostructures creation. Two-stage MACE was used to make the samples. In the first stage, silver nanoparticles were deposited on the surface of single crystalline silicon. In the second stage, the samples were etched in a solution of water, hydrogen peroxide and hydrofluoric acid and, as a consequence, a structured surface was obtained. It should be noted that the samples were treated at different times of each of the stages of MACE. Based on the obtained samples, diode light sensors with different photoelectric parameters were synthesized. For the sensors obtained, the sensitivity was calculated in the photodiode and photogenerator modes, and the volt-ampere, luxury-ampere characteristics and dependences of the current density on the illumination density were constructed. structured silicon has a mesh-like appearance, where the dark regions are gaps (pores) and the light ones are silicon (pore walls, nanowires). First, compare the samples with different deposition times. It is seen that as the deposition time of the particles increases from 10 to 40 s, a more developed silicon surface is formed. Also, with the duration of deposition 40s on the silicon surface there are needle-like formations, which according to the results in the work are silver dendrites. All the above characteristics were analyzed for the effect of the deposition time of silver particles t1 and etching time t2 on them. Studies have shown that the optimum technological conditions of metal assisted chemical etching of silicon for using in light sensors are the following conditions: the deposition time of silver particles 40c, etching time 30 min, the content of hydrogen peroxide in the second solution of 0.8 ml. This mode of synthesis of the structuring of silicon substrates provides maximum photosensitivity ratios both in the photodiode (1.53 mA / lmV) and in the photogenerator (304 mA / W) modes. The influence of the concentration of H2O2 used in the second stage is crucial only for the photocurrent, which is not critical, and the influence of the AgNO3 concentration in the first stage of MACE does not have a significant effect on the parameters.

The effect of Ar/O2 mixing ratio on gas-phase characteristics and SiO2 etching kinetics in CF4 + Ar + O2 and C4F8 + Ar + O2 plasmas was studied under conditions of 13.56 MHz inductive RF discharge. The constant processing parameters were fraction of fluorocarbon component in a feed gas (50%) total gas pressure (6 mTorr), input power (700 W) and bias power (200 W). It was found that the full substitution of Ar for O2 in both gas systems results in non-monotonic (with a maximum at ~ 25% Ar + 25% O2) SiO2 etching rates as well as in monotonically increasing photoresist etching rate with higher absolute values for CF4-containing mixture. The steady-state densities of active species were determined using a combination of plasma diagnostics by Langmuir probes and 0-dimensional (global) plasma modeling. Corresponding results indicated that both gas systems are characterized by quite close parameters of electron and ion components while exhibit sufficient differences in the kinetics of neutral species, especially in the presence of O2. The latter produces opposite changes in F atom density as well as in effective probability of ion-assisted chemical reaction vs. Ar/O2 mixing ratio. Relationships between type of fluorocarbon component and heterogeneous process kinetics were analyzed through the set of gas-phase-related parameters (fluxes, flux-to-flux ratios) characterizing chemical etching pathways for SiO2 and formation/destruction balance for the fluorocarbon polymer film. It was suggested that the transition toward O2-rich plasma in the low-polymerizing CF4 + Ar + O2 plasma suppresses the effective probability for SiO2 + F reaction through decreasing efficiency for oxide bond breaking and desorption of etching products due to decreasing ion energy flux. Oppositely, an increase in O2 content in the high-polymerizing C4F8 + Ar + O2 mixture lifts up the effective reaction probability by decreasing fluorocarbon film thickness and providing better access of F atoms to the etched surface.

This article reports a novel work on the fabrication of microarrays of electrospun Poly(vinylidene fluoride) (PVDF) membrane for MEMS and energy harvesting applications. Micropatterning of PVDF membrane is an essential step in fabrication process in order for the sample to be integrated in microelectromechanical systems. The high $\beta $ -phase fraction of PVDF membranes was successfully synthesized by one step electrospinning technique. A new fabrication process for micropatterning of electrospun PVDF membrane is being proposed using dry reactive ion etching. Oxygen plasma was chosen as the feeding gas in investigation for high etching rate in PVDF microstructure fabrication process. Micropatterning dimensions of 200/500/ $200~\mu \text{m}$ with the height of over $50~\mu \text{m}$ and etching rate of $2~\mu \text{m}$ /min were achieved in this work. Details of the fabrication process are discussed. High etching rate of patterning process with the selected parameters can be achieved on the electrospun PVDF membranes. This work has demonstrated successful micropatterning and integration of PVDF membrane into MEMS, thus open the possibilities for various application such as for sensors and actuators utilizing polymer membrane. We have validated the capability of the micropatterned device as energy harvester in producing an open circuit voltage density of 1.42 $\text{V}\cdot \text{m}^{{-2}}$ at temperature of 310.15 K and wind speed of 1 $\text{m}\cdot \text{s}^{{-1}}$ . [2019-0180]

The kind of profile produced during the reactive ion etching of AlGaInN light-emitting-diode (LED) heterostructures on the surface that became free after removal of the growth substrate is studied in relation to the composition of the gas mixture used in the etching process. It is shown that using a mixture composed of Cl2 and Ar, taken in a 3:2 ratio in terms of flow rates, leads to the thinnest profile, whereas a 2 : 1 gas mixture of BCl3 and Ar provides the largest structural elements. To study the effect of the kind of profile on the quantum efficiency (QE), flip-chip LEDs are fabricated on a silicon substrate. The LEDs are etched in different modes after the growth substrate is removed. Etching in the Cl2:BCl3:Ar mixture with a flow ratio of 6:10:11, which leads to intermediate sizes of the etching profile elements, is optimal for obtaining maximum light extraction from a LED chip at a wavelength of 460 nm. The variation of the kind of profile with the gas-mixture composition suggests that the profile parameters can be tuned to the wavelength used. An analysis of how the QE of LED chips depends on the etching duration in the three-component mixture under consideration results in that the optimum etching duration is estimated to be ~30 min. The results of the study can also be of use in the search for conditions minimizing the reflection of incident light by a chip, e.g., for photodetectors.

Since the outbreak of the severe respiratory disease caused by the novel coronavirus (COVID-19), the use of face masks has become ubiquitous worldwide to control the rapid spread of this pandemic. As a result, the world is currently facing a face mask shortage, and some countries have placed limits on the number of masks that can be bought by each person. Although the surgical grade N95 mask provides the highest level of protection currently available, its filtration efficiency for sub-300 nm particles is around 85% due to its wider pore size (∼300 nm). Because the COVID-19 virus shows a diameter of around 65–125 nm, there is a need for developing more efficient masks. To overcome these issues, we demonstrate the development of a flexible, nanoporous membrane to achieve a reusable N95 mask with a replaceable membrane and enhanced filtration efficiency. We first developed a flexible nanoporous Si-based template on a silicon-on-insulator wafer using KOH etching and then used the template as a hard mask during a reactive ion etching process to transfer the patterns onto a flexible and lightweight (

The electron density distribution and average electron temperature distribution in reactive ion etching (RIE) chamber are of great significance for the ionization and excitation reaction rate. The uniformity of radial distributions of the electron density and average electron temperature in the discharge chamber greatly affects the uniformity of the etching, especially the plasma etching of large area SiO2 substrates. We study the effects of discharge conditions (including power and pressure) on the electron density and average electron temperature of plasma-etched 400 mm SiO2 substrates in the reactive ion etching chamber; the simulation results show that the allowable major discharge conditions strongly affect the characteristics of plasma in the large area reactive ion etching chamber. Specifically, with increase in the power both the electron density and average electron temperature increase, being accompanied by deteriorating uniformity of their radial distributions. As the pressure increases, the electron density increases but average electron temperature decreases, being accompanied by deteriorating uniformity of their radial distributions. These methods and conclusions can provide reference for the improvement of cavity structure and large area RIE equipment designing and selection of the process parameters.

The article presents the features of using the through reactive ion etching of quartz membranes with a thickness of 20 μm or more in the technology of the group manufacturing of pendulums of Q-flex accelerometers. A comparative analysis of the thin-film masking material (aluminum, chromium, titanium, copper, nickel) for the through reactive ion etching of quartz by the selectivity parameters and the temperature stresses introduced into the membrane is carried out. The mechanism of interaction of a copper mask with a fluorine-containing plasma, namely, the formation of copper fluorides on the masking surface and the subsequent increase in the total thickness of the mask with the etching time, are considered. The effect of a local increase in the etching rate of quartz in the region of thermal stresses of the membrane near the masking metal pattern is revealed. To study the effect, a method is developed for decorating a quartz surface with microneedles using an etching mode with an increased bias voltage.

Silicon solar cell texturing is the process of reducing the light reflection of the solar cells by changing their surface structure. Given that multi-crystalline silicon (mc-Si) wafers have grains with different orientations, their texturing process is more difficult to realize compared with those of monocrystalline silicon (mono-Si) wafers. There are two types of texturing processes: wet and dry texturing. Acidic solution-based wet-textured mc-Si samples have higher reflectance values than mono-Si wafers. However, the reactive ion etching (RIE)-texturing of mc-Si wafers has the advantage of decreasing reflectance to values below 10%. Despite this decrease in reflectance, RIE byproducts and plasma-induced damage bring about recombination that results in a decrease the passivation properties of the solar cell. In this study, the RIE byproducts as well as the plasma-induced damage of the RIE-textured mc-Si wafers were analyzed using SEM, STEM, and EDS analysis, while quasi-steady-state photoconductance (QSSPC) was used to confirm the optical characteristics of the RIE-textured mc-Si wafers. Additionally, HF treatment resulted in byproduct removal, and a relatively high implied Voc (673 mV) was confirmed within 3 min of HF treatment. The defect removal etching (DRE) process using KOH was applied to remove the lattice defect layer, and after 40 s of the DRE treatment, the implied Voc increased to ~ 680 mV. Thus, the RIE-textured mc-Si solar cell showed a power conversion efficiency of 19.6%, which was ~ 0.6% higher than that of acid-textured mc-Si solar cells based on the increase in short-circuit current (Isc).

In this paper, we study the technological process of separating a heteroplate from a polycrystalline diamond film (PDF-Si), separating a whole plate from sacrificial silicon. The hole formation in a diamond substrate from PDF via laser milling and plasma-chemical etching is studied. Plasma-chemical etching provided batch hole fabrication based on planar technology and precision lithography. The technological modes of hole etching through an aluminum mask via reactive ion etching with an inductively coupled plasma source (RIE-ICP) were optimized. The hole etching rate in the PDF was ~ 1.1 μm/min. A mathematical model of the technological process is developed. Etching is shown to occur mainly in oxygen. The technological process is adapted for the plasma-chemical etching setup “Plasma TM5”. The possibility of etching in a PDF holes 100 μm in diameter and more than 300 μm deep was studied. The etching rate was shown to depend on the hole depth and is nonlinear in nature, with etching of the hole walls and the aluminum mask.

Dry etching is a prevalent technique for pattern transfer and material removal in microelectronics, optics and photonics due to its high precision material removal with low surface and subsurface damage. These processes, including reactive ion etching (RIE) and plasma etching (PE), are performed at vacuum conditions and provide high selectivity and vertical side wall etched patterns but create high costs and efforts in maintenance due to the required machinery. In contrast to electrically generated plasmas, laser-induced micro plasmas are controllable sources of reactive species in gases at atmospheric pressure that can be used for dry etching of materials. In the present study, we have demonstrated the laser-induced plasma etching of monocrystalline silicon. A Ti:Sapphire laser has been used for igniting an optically pumped plasma in a CF4/O2 gas mixture near atmospheric pressure. The influence of process parameters, like substrate temperature, O2 concentration, plasma-surface distance, etching duration, pulse energy and crystal orientation on etching rate and surface morphology has been investigated. Typical etching rates of 2–12 µm x min−1 can be achieved by varying mentioned parameters with a decreasing etching rate during the process. Different morphologies can be observed due to the parameters set, smooth as well as rough surfaces or even inverted pyramids. The presented etching method provides an approach for precise machining of silicon surfaces with good surface qualities near atmospheric pressure and sufficiently high material removal rates for ultraprecise surface machining.

The negatively charged germanium-vacancy GeV− color centers in diamond nanocrystals are solid-state photon emitters suited for quantum information technologies, bio-sensing, and labeling applications. Due to the small Huang–Rhys factor, the GeV−-center zero-phonon line emission is expected to be very intensive and spectrally narrow. However, structural defects and the inhomogeneous distribution of local strains in the nanodiamonds result in the essential broadening of the ZPL. Therefore, clarification and elimination of the reasons for the broadening of the GeV− center ZPL is an important problem. We report on the effect of reactive ion etching in oxygen plasma on the structure and luminescence properties of nanodiamonds grown by hot filament chemical vapor deposition. Emission of GeV− color centers ensembles at about 602 nm in as-grown and etched nanodiamonds is probed using micro-photoluminescence and micro-Raman spectroscopy at room and liquid nitrogen temperature. We show that the etching removes the nanodiamond surface sp2-induced defects resulting in a reduction in the broad luminescence background and a narrowing of the diamond Raman band. The zero-phonon luminescence band of the ensemble of the GeV− centers is a superposition of narrow lines originated most likely from the GeV− center sub-ensembles under different uniaxial local strain conditions.

We investigate contamination induced in grating-like structures during the etching process as a possible precursor to laser-induced damage. Our experimental model utilizes 5-mm line structures fabricated in E-beam–deposited coatings of silica using reactive ion etching (RIE) and reactive ion beam etching (RIBE). This makes it possible to compare the behavior in the pillars and trench regions. The results suggest that surface contaminants are primarily fluorinated polymers, while embedded contaminants consist primarily of carbon with very low detection of fluorine. Samples fabricated by the RIBE method exhibit significantly reduced roughness in the trenches, yet still present similar embedded contamination.

Production of high-aspect-ratio silicon (Si) nanowire-based anode for lithium ion batteries is challenging particularly in terms of controlling wire property and geometry to improve the battery performance. This report demonstrates tunable optimization of inductively coupled plasma reactive ion etching (ICP-RIE) at cryogenic temperature to fabricate vertically-aligned silicon nanowire array anodes with high verticality, controllable morphology, and good homogeneity. Three different materials [i.e., photoresist, chromium (Cr), and silicon dioxide (SiO2)] were employed as masks during the subsequent photolithography and cryogenic ICP-RIE processes to investigate their effects on the resulting nanowire structures. Silicon nanowire arrays with a high aspect ratio of up to 22 can be achieved by tuning several etching parameters [i.e., temperature, oxygen/sulfur hexafluoride (O2/SF6) gas mixture ratio, chamber pressure, plasma density, and ion energy]. Higher compressive stress was revealed for longer Si wires by means of Raman spectroscopy. Moreover, an anisotropy of lattice stress was found at the top and sidewall of Si nanowire, indicating compressive and tensile stresses, respectively. From electrochemical characterization, half-cell battery integrating ICP-RIE-based silicon nanowire anode exhibits a capacity of 0.25 mAh cm−2 with 16.67% capacity fading until 20 cycles, which has to be improved for application in future energy storage devices.

The paper describes methods for manufacturing of diffractive optical elements by means of only "dry" processes starting from direct laser writing on titanium-containing films. According to first approach, direct laser writing onto thin Ti film forms surface oxide mask. Reactive ion etching removes non-oxidized Ti film and develops "latent" oxidized image. Subsequent thermal annealing of the oxidized Ti structure in air makes the mask more stable for following reactive ion etching of fused silica substrate to ensure proper phase depth of the binary diffractive structure. This makes it possible to avoid liquid etching, which reduces the yield and accuracy. The phase structure of the diffractive elements manufactured using the described method consists of the grooves etched in the fused silica substrate between ridges covered by TiO2 between them. We found out also that covering the Ti film by very thin Si layer helps to increase laser energy absorption at direct writing and creates quite resistant masking layer TiSi2 for the reactive ion etching. Preliminary estimates show that dual layer Si/Ti films can be used to create amplitude reflective DOEs. Possible application area for the developed methods is manufacturing of the diffractive optical elements used for precision generation of reference wavefronts in interferometric measurements of spherical and aspherical surfaces.

By using a methane and hydrogen process gas mixture in an appropriate hot-filament CVD process without further dopant, high electrical conductivity of over 100 S/cm has been achieved in nanocrystalline diamond films deposited on silicon single-crystalline substrates. Furthermore, it was found that an oxygen reactive-ion etching process (O-RIE) can improve the diamond film surface’s electron affinity, thus reducing the specific contact resistance. The reduction of the specific contact resistance by a factor of up to 16 was realized by the oxygen ion etching process, down to 6×10−6 Ωcm2. We provide a qualitative explanation for the mechanism behind the contact resistance reduction in terms of the electron affinity of the diamond surface. With the aid of XPS, AFM, and surface wetting measurements, we confirmed that a higher surface electron affinity is responsible for the lower specific contact resistance of the oxygen-terminated nanocrystalline diamond films., publishedVersion

Methods of micro-profiling of 4H-SiC are described: formation of mesa structures with inclined walls (off-vertical wall inclination angle exceeding 45°) by reactive ion etching; etching of mesa structures with a flat bottom and inclined walls (off-vertical wall inclination angle being smaller than 45°) by ion-beam and reactive ion plasma etching. The application of etching methods in the fabrication technology of 4H-SiC-based mesa-epitaxial field-effect transistors with a Schottky gate is demonstrated.

The work aims to optimise the geometry of the inductor of a reactive-ion etching reactor using the COMSOL Multiphysics package, including the calculation of the electron temperature, density, and electric potential of a plasma. A “fine” finite element mesh was used with a minimum finite element size (8.6·10−5) m in the simulation. It was shown that to obtain a high density plasma with a high electric potential and electron temperature, it is necessary to use an inductor with fewer turns.

Texturing of diamond wire cut wafers using a standard wafer etch process chemistry has always been a challenge in solar cell manufacturing industry. This is due to the change in surface morphology of diamond wire cut wafers and the abundant presence of amorphous silicon content, which are introduced from wafer manufacturing industry during sawing of multi-crystalline wafers using ultra-thin diamond wires. The industry standard texturing process for multi-crystalline wafers cannot deliver a homogeneous etched silicon surface, thereby requiring an additive compound, which acts like a surfactant in the acidic etch bath to enhance the texturing quality on diamond wire cut wafers. Black silicon wafers on the other hand require completely a different process chemistry and are normally textured using a metal catalyst assisted etching technique or by plasma reactive ion etching technique. In this paper, various challenges associated with cell processing steps using diamond wire cut and black silicon wafers along with cell electrical results using each of these wafer types are discussed.

A CoNiCrAlTaHfY/Co composite coating was prepared on the etched C/C composites by using duplex vapor phase surface alloying treatments, i.e., Co alloying and Co–Ni–Cr–Al–Ta–Hf–Y alloying. Microstructures and oxidation behavior of the coated C/C composites were analyzed by scanning electron microscopy, energy-dispersive spectroscopy, and X-ray diffraction. The result showed that the CoNiCrAlTaHfY/Co composite coating, 25 µm in thickness, was compact and composed of CrCoTa, AlCo2Ta, AlxCry, AlxNiy, and Co. The coating adhesion can be enhanced by microwave plasma chemical vapor deposition etching of matrix surface and adding a Co intermediate layer between the CoNiCrAlTaHfY top layer and C/C composites substrate. The honeycomb structure after etching was helpful to alloying element absorb and diffuse into substrate surface, and the composite coating continuation was improved by the Co buffer layer. After exposing in air for 180 min at 1000 °C, the bulk C/C composites volatilized while the loss rate of coated C/C composites was 0.82%, showing an improved oxidation resistance. Mixed oxides mainly containing Al2O3 and Cr2O3 were formed in the composite coating surface and protected the C/C composites from oxidation in air.

Damage of the gate oxide induced by plasma processing, due to charge buildup on conductors in ohmic contact with the oxide, was studied by special test structures consisting of a small test capacitor connected to large charge collecting antennas on conducting layers. Effects of various plasma processing steps in a model complementary metal oxide semiconductor process on the gate oxide quality, as revealed by the charge to breakdown (Q bd ) measurements, after successive processing steps are reported. The most pronounced degradation of the oxide quality occurred at the metal-1 etch: ΔQ bd =-1.9 C/cm 2 or 360 pC/μm of exposed edge. About 220 pC/μm of the cumulative value is due to the metal-1 etching and 140 pC/μm is due to the partial photoresist ashing

Here, we report a straightforward approach to fabricate antifogging antireflective dual-function nanostructured coatings, where antireflective nanograsses were etched into antifogging polymer coatings by self-masking reactive ion etching (RIE). The transmittance of coatings increases with the etching time, and the maximum transmittance reaches up to 98.9% in 180 s. The effective refractive index of grass-like nanostructure was calculated to be 1.15 and its optical property was simulated via the finite difference time domain (FDTD) model. The antifogging property of polymer coatings remains unchanged after RIE, which results from the hygroscopicity of polymer matrix. This strategy surpasses traditional design concepts of antifogging polymer coatings by combining excellent antireflective and antifogging properties on the same outermost layer, which demonstrates that it is probable to achieve multifunction on a single layer of a single composition.

We study the surface morphology, mass loss and wetting of fluorinated ethylene propylene surfaces which have been treated using reactive ion etching. We find that etching with argon gas alone results in a network structure, while oxygen combined with argon results in pyramidal hair-like structures, and by adding CF4 globules are found. We demonstrate that small alterations in the preparation allows one to create samples with either homogeneous nanostructures exhibiting large contact angles and very low hysteresis or more irregular structures which exhibits pinning sites that allow very large contact angle hysteresis. The advancing and receding contact angles are estimated based on the tilting plate method, and the pinning force measured for the samples is investigated for large droplets. The results reported here indicate that surface structure and contact angle hysteresis of fluorinated polymers can be manipulated for applications where either large or small contact angle hysteresis is needed.

Capacitively coupled plasma reactive ion etching of silicon by injecting nitrogen trifluoride (NF3) gas was conducted, and the etching process was studied with a residual gas analyzer and an optical emission spectroscopy. During the etching of silicon by the NF3 plasma, the currents of F+ and SiF+3 ions were obtained from the residual gas analyzer. At the same time, the line intensity of fluorine was measured using optical emission spectroscopy. The ion currents of F+ and SiF+3 and the line intensity of fluorine were highest for etching at high pressure. With the results of this study, the general characteristics of reactive ion etching of silicon by using NF3 plasma were confirmed. In addition, by simply changing the flow rate of NF3, a high NF3 flow rate was found to result in a high etch rate because of the reduced residence time.

For various lighting and monolithic sensor systems application, vertically aligned three-dimensional (3D) gallium nitride (GaN)- and indium gallium nitride (InGaN)/GaN-based LED nanowire arrays with sub-200 nm feature sizes (down to 35 nm) were fabricated using a nanosphere lift-off lithography (NSLL) technique combined with hybrid top-down etching (i.e., inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching). Owing to the lithographic opening and well-controlled surface functionalization prior to the polystyrene nanosphere (PN) deposition, vertical GaN nanowire arrays with an area density of 9.74 × 108 cm–2 and an aspect ratio of >10 could be realized in a specified large area of 1.5 × 1.5 mm2. Optoelectrical characteristics of the nanoLEDs were further investigated in cathodoluminescence (CL) measurements, in which multiquantum well (MQW) shows a clear CL-emission at a wavelength of 465 nm. Thus, using NSLL to manufacture low-cost but highly ordered 3D GaN-based nanowir...

We report on a novel and simple pattern transfer process into Si via fullerene-based spin-on-carbon (SOC) hard masks in this work. Electron beam lithography and extreme ultraviolet interference lithography techniques are used to pattern high-resolution and dense lines on a resist/SOC bilayer. The patterns are subsequently transferred by a low-pressure O2 plasma etching (SOC) and reactive ion etching process with a gas mixture of SF6 and C4F8 (Si). Si sidewall trimming can be controlled by modifying the Si etching rate, achieving Si fins with dimension down to 15 nm half-pitch with aspect ratio as high as of 7:1.

The advent of recent technologies in the nanoscience arena requires new and improved methods for the fabrication of multiscale features (e.g., from micro- to nanometer scales). Specifically, biological applications generally demand the use of transparent substrates to allow for the optical monitoring of processes of interest in cells and other biological materials. Whereas wet etching methods commonly fail to produce essential nanometer scale features, plasma-based dry etching can produce features down to tens of nanometers. However, dry etching methods routinely require extreme conditions and extra steps to obtain features without residual materials such as sidewall deposits (veils). This work presents the development of a gold etching process with gases that are commonly used to etch glass. Our method can etch gold films using reactive ion etching (RIE) at room temperature and mild pressure in a trifluoromethane (CHF3)/oxygen (O2) environment, producing features down to 50 nm. Aspect ratios of 2 are obt...

Inductively coupled plasma reactive ion etching of copper thin films patterned with SiO2 masks was carried out using CH3COOH/Ar gas. The etch rate, etch selectivity to SiO2 mask, and the etch profiles of copper films were examined. The evolution study of the etch profile as a function of gas concentration and etch depth revealed the etch sequence and etch mechanism. In the optimized CH3COOH/Ar gas, the systematic approach on the etch characteristics of copper films was performed by changing the etch parameters including inductively coupled plasma (ICP) rf power, dc-bias voltage to substrate, and process pressure. As the ICP rf power and dc-bias voltage increased and the process pressure decreased, the etch rate increased and the etch profile improved. X-ray photoelectron spectroscopy was used to determine the etch mechanism in CH3COOH/Ar gas. Finally, the etching of copper films in the CH3COOH/Ar was achieved with good etch profile with a high degree of anisotropy.

In order to analyze the effects of various sizes of pyramid structure on solar cell characteristics, a pyramid structure was formed on the wafer through various etching processes. In this paper, etching was performed using one-step etching processes such as alkaline solution etching, reactive ion etching (RIE), and metal-assisted chemical etching (MACE), and two-step etching processes such as alkaline solution + MACE and alkaline solution + RIE. The micro-sized pyramid-structured wafers formed using the alkali solution showed higher reflectivity than nano-sized pyramid-structured wafers. Accordingly, it was expected that the characteristics of the cells fabricated with a nano-sized pyramid-structured wafer having low reflectivity would be higher than that of a micro-sized pyramid-structured wafer. However, it was confirmed that the quantum efficiency characteristics in the short wavelength region were higher in the micro-sized pyramid-structured wafers than in the nano-sized pyramid-structured wafers. To confirm the reason for this, surface characteristics were analyzed through the deposition of an emitter layer on a wafer formed in a pyramidal structure. As a result, in the case of the nano-sized pyramid-structured wafer, the sheet resistance characteristics were lower due to the increased depth of the emitter layer in comparison to the micro-sized pyramid-structured wafer. Accordingly, it was determined that the quantum efficiency was degraded as a result of the high recombination rate.

The power conversion efficiency (PCE) of perovskite/silicon tandem solar cells (PSTSCs) is expected to increase with optimized light management. In this work, we report on PSTSCs containing nanostructures enabling PCEs exceeding 26%. A hexagonal sinusoidal nanostructure with 750nm period was used. The structure was transferred into silicon by nanoimprint lithography and reactive ion etching. Perovskite top cells were deposited by spin-coating resulting in a full coverage of the nanostructure. PSTSC comprising these nanostructures yielded a steady-state PCE of 26.1% and a short-circuit current density of 19.5mA·cm−2.

The long-wave infrared (LWIR) spectroscopy has emerged as a promising technique for applications ranging from medical diagnosis to satellite imaging and terrestrial imaging. However, traditional optical elements are not realized well for the LWIR region. In this work, notch filters for LWIR spectral range (8 ~ 12 μm) based on the guided mode resonance (GMR) effect were designed, fabricated, and characterized with Germanium (Ge) thin film on Zinc Selenide (ZnSe) substrates. In contrast to the typical photolithography process, which faces challenge of resolution limit, we used e-beam lithography process to pattern the grating. By using a reactive ion etching process with a mixture of etching and passivation gases, we fabricated grating with well-defined vertical sidewalls. Finite-difference time-domain (FDTD) method was used to calculate the optical responses and model the geometry of the notch filters, and the optical transmittance of fabricated filters agrees well with the calculations. Moreover, we demonstrate the improved notch filtering response with reduced Fabry-Perot noise by introducing anti-reflection layer on the bottom of the ZnSe substrate. Therefore, findings of this work will be useful for various filter fabrications that prefer high spatial resolution in the LWIR spectral region.

Generally, an optical lens is reduced its reflection by multilayer anti-reflection coating. However, there are some problems, for example, those coatings cannot be attached for some kind of resins, and show clack or peeling by temperature change or humidity. Lately, anti-reflection effect by sub-wavelength structure on optical lens surface is studied widely. This is called ARS, Anti-Reflective Structure. ARS solved above problems, and has low dependence on incident angle of light. Conventionally, for mass production of ARS lens, we tried injection molding. That is, fabricating fine structure on mold core, and transfer the structure to plastic resin. However, the transferring is very difficult, because of its fineness and adhesion resin to the core. Besides, mold for high transcription is expensive. We tried to fabricate ARS on plastic lens surface by Reactive Ion Etching. Controlling plasma condition at each etching process cleverly, we successfully obtained fine ARS on optical lens surface. The structure has high aspect and narrow pitch which is about 0.1μm, and show good anti-reflective property.