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Vertical GaN Nanowires and Nanoscale Light-Emitting-Diode Arrays for Lighting and Sensing Applications
- Source :
- ACS Applied Nano Materials. 2:4133-4142
- Publication Year :
- 2019
- Publisher :
- American Chemical Society (ACS), 2019.
-
Abstract
- For various lighting and monolithic sensor systems application, vertically aligned three-dimensional (3D) gallium nitride (GaN)- and indium gallium nitride (InGaN)/GaN-based LED nanowire arrays with sub-200 nm feature sizes (down to 35 nm) were fabricated using a nanosphere lift-off lithography (NSLL) technique combined with hybrid top-down etching (i.e., inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching). Owing to the lithographic opening and well-controlled surface functionalization prior to the polystyrene nanosphere (PN) deposition, vertical GaN nanowire arrays with an area density of 9.74 × 108 cm–2 and an aspect ratio of >10 could be realized in a specified large area of 1.5 × 1.5 mm2. Optoelectrical characteristics of the nanoLEDs were further investigated in cathodoluminescence (CL) measurements, in which multiquantum well (MQW) shows a clear CL-emission at a wavelength of 465 nm. Thus, using NSLL to manufacture low-cost but highly ordered 3D GaN-based nanowir...
- Subjects :
- Materials science
business.industry
Nanowire
Cathodoluminescence
Gallium nitride
Indium gallium nitride
Isotropic etching
law.invention
chemistry.chemical_compound
chemistry
Etching (microfabrication)
law
Optoelectronics
General Materials Science
Reactive-ion etching
business
Light-emitting diode
Subjects
Details
- ISSN :
- 25740970
- Volume :
- 2
- Database :
- OpenAIRE
- Journal :
- ACS Applied Nano Materials
- Accession number :
- edsair.doi...........d61c96b8f0633c06143fa7aee424fd4e