1. Carrier Mobility in Semiconductors at Very Low Temperatures
- Author
-
Thomas Ortlepp, Ronny Stolz, Thomas Fröhlich, Ingo Tobehn-Steinhäuser, Matthias Schmelz, and Manfred Reiche
- Subjects
Electron mobility ,Materials science ,Semiconductor ,Silicon ,chemistry ,Condensed matter physics ,Dopant ,business.industry ,chemistry.chemical_element ,Atmospheric temperature range ,business ,Quantum - Abstract
Carrier mobilities and concentrations were measured for different p- and n-type silicon materials in the temperature range 0.3–300 K. Simulations show that experimentally determined carrier mobilities are best described in this temperature range by Klaassen’s model. Freeze-out reduces the carrier concentration with decreasing temperature. Freeze-out, however, depends on the dopant type and initial concentration. Semi-classical calculations are useful only for temperatures above 100 K. Otherwise quantum mechanical calculations are required.
- Published
- 2021