Back to Search
Start Over
Dislocation Networks Formed by Silicon Wafer Direct Bonding
- Source :
- Materials Science Forum. 590:57-78
- Publication Year :
- 2008
- Publisher :
- Trans Tech Publications, Ltd., 2008.
-
Abstract
- The paper reviews methods of hydrophobic wafer bonding. Hydrophobic surfaces are obtained by removing the oxide layer from the surfaces of crystalline silicon substrates. Bonding such surfaces causes the formation of a dislocation network in the interface. The structure of the dislocation network depends only on the misalignment (twist and tilt components). The different dislocation structures are discussed. Because wafer bonding offers a method to the reproducible formation of such networks, different applications are possible
- Subjects :
- Quantitative Biology::Biomolecules
Materials science
Silicon
Wafer bonding
Mechanical Engineering
chemistry.chemical_element
Direct bonding
Condensed Matter Physics
Condensed Matter::Materials Science
Crystallography
chemistry
Mechanics of Materials
Anodic bonding
General Materials Science
Wafer
Crystalline silicon
Composite material
Dislocation
Layer (electronics)
Subjects
Details
- ISSN :
- 16629752
- Volume :
- 590
- Database :
- OpenAIRE
- Journal :
- Materials Science Forum
- Accession number :
- edsair.doi...........dfae0e530363295b68c6a42e5b209bca