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Strained Silicon Devices
- Source :
- Solid State Phenomena. :61-68
- Publication Year :
- 2009
- Publisher :
- Trans Tech Publications, Ltd., 2009.
-
Abstract
- Strained silicon channels are one of the most important Technology Boosters for further Si CMOS developments. The mobility enhancement obtained by applying appropriate strain provides higher carrier velocity in MOS channels, resulting in higher current drive under a fixed supply voltage and gate oxide thickness. The physical mechanism of mobility enhancement, methods of strain generation and their application for advanced VLSI devices is reviewed.
- Subjects :
- Very-large-scale integration
Materials science
business.industry
Oxide
Strained silicon
Hardware_PERFORMANCEANDRELIABILITY
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
chemistry.chemical_compound
Strain engineering
CMOS
chemistry
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
General Materials Science
Carrier velocity
business
AND gate
Voltage
Subjects
Details
- ISSN :
- 16629779
- Database :
- OpenAIRE
- Journal :
- Solid State Phenomena
- Accession number :
- edsair.doi...........ab56b5be05d85d78b41547bd865fc5ef