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38 results on '"Frank Fournel"'

1. AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

Author

Claire Besancon, Delphine Néel, Dalila Make, Joan Manel Ramírez, Giancarlo Cerulo, Nicolas Vaissiere, David Bitauld, Frédéric Pommereau, Frank Fournel, Cécilia Dupré, Hussein Mehdi, Franck Bassani, Jean Decobert, Laboratoire des technologies de la microélectronique (LTM ), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
Technology, direct wafer bonding, QH301-705.5, QC1-999, 02 engineering and technology, semiconductor lasers, 020210 optoelectronics & photonics, 0202 electrical engineering, electronic engineering, information engineering, General Materials Science, Biology (General), Instrumentation, QD1-999, [PHYS]Physics [physics], Fluid Flow and Transfer Processes, silicon photonics, Process Chemistry and Technology, epitaxial growth, Physics, General Engineering, 021001 nanoscience & nanotechnology, Engineering (General). Civil engineering (General), Computer Science Applications, Chemistry, TA1-2040, 0210 nano-technology, heterogeneous integration
Abstract

International audience; The tremendous demand for low-cost, low-consumption and high-capacity optical transmitters in data centers challenges the current InP-photonics platform. The use of silicon (Si) photonics platform to fabricate photonic integrated circuits (PICs) is a promising approach for low-cost large-scale fabrication considering the CMOS-technology maturity and scalability. However, Si itself cannot provide an efficient emitting light source due to its indirect bandgap. Therefore, the integration of III-V semiconductors on Si wafers allows us to benefit from the III-V emitting properties combined with benefits offered by the Si photonics platform. Direct epitaxy of InP-based materials on 300 mm Si wafers is the most promising approach to reduce the costs. However, the differences between InP and Si in terms of lattice mismatch, thermal coefficients and polarity inducing defects are challenging issues to overcome. III-V/Si hetero-integration platform by wafer-bonding is the most mature integration scheme. However, no additional epitaxial regrowth steps are implemented after the bonding step. Considering the much larger epitaxial toolkit available in the conventional monolithic InP platform, where several epitaxial steps are often implemented, this represents a significant limitation. In this paper, we review an advanced integration scheme of AlGaInAs-based laser sources on Si wafers by bonding a thin InP seed on which further regrowth steps are implemented. A 3 µm-thick AlGaInAs-based MutiQuantum Wells (MQW) laser structure was grown onto on InP-SiO2/Si (InPoSi) wafer and compared to the same structure grown on InP wafer as a reference. The 400 ppm thermal strain on the structure grown on InPoSi, induced by the difference of coefficient of thermal expansion between InP and Si, was assessed at growth temperature. We also showed that this structure demonstrates laser performance similar to the ones obtained for the same structure grown on InP. Therefore, no material degradation was observed in spite of the thermal strain. Then, we developed the Selective Area Growth (SAG) technique to grow multi-wavelength laser sources from a single growth step on InPoSi. A 155 nm-wide spectral range from 1515 nm to 1670 nm was achieved. Furthermore, an AlGaInAs MQW-based laser source was successfully grown on InP-SOI wafers and efficiently coupled to Si-photonic DBR cavities. Altogether, the regrowth on InP-SOI wafers holds great promises to combine the best from the III-V monolithic platform combined with the possibilities offered by the Si photonics circuitry via efficient light-coupling.

Published
2022

2. Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking

Author

Lucile Arnaud, Chantal Karam, F. Servant, Severine Cheramy, S. Borel, Frank Fournel, Thierry Mourier, C. Dubarry, N. Bresson, Mathilde Gottardi, G. Mauguen, and M. Assous

Subjects
Interconnection, Fabrication, Materials science, business.industry, Copper interconnect, Stacking, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, Stack (abstract data type), Etching (microfabrication), Optoelectronics, General Materials Science, Wafer, 0210 nano-technology, business, Lithography
Abstract

Recent applications require vertical chip stacking to increase the performance of many devices without the need of advanced node components. Image sensors and vision systems will embed more and more smart functions, for instance, image processing, object recognition, and movement detection. In this perspective, the combination of Cu-to-Cu direct hybrid bonding technology with Through-Silicon-Via (TSV) will allow 3D interconnection between pixels and the associated computing and memory structures, each function fabricated on a separate wafer. Wafer-to-wafer hybrid bonding was achieved with multi-pitch design—1–4 µm—of single levels of Cu damascene patterned on 300 mm silicon substrates. Defect-free bonding, as far as the extreme edge of the wafer, was demonstrated on a stack with three wafers. Middle wafers thinning was done with grinding only and with a thickness uniformity (TTV)

Published
2020

3. Aluminium-Nitride Thin-Films On Polymer Substrates Obtained by Adhesive Bonding

Author

Laurent Gaëtan Michaud, Nicolas Vaxelaire, Pierre Montmeat, Frank Fournel, Alexandre Reinhardt, Joël Eymery, Marie Bousquet, Edy Azrak, Samuel Tardif, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), and Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
010302 applied physics, chemistry.chemical_classification, Materials science, Adhesive bonding, Aluminium nitride, 02 engineering and technology, Polymer, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, [SPI.MAT]Engineering Sciences [physics]/Materials, chemistry.chemical_compound, chemistry, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Thin film, Composite material, 0210 nano-technology
Abstract

International audience; A scalable manufacturing method is demonstrated for the transfer of crystalline AlN thin-films deposited on 200 mm Si wafer onto a flexible and stretchable polymer. The resulting AlN-On-Polymer (AOP) can be bent and stretched. This novel transfer process allows a straightforward strain-engineering method of semiconductor thin-films when transferred onto polymer. Straining controllably semiconductor thin-films may alter their properties, which may boost the performance of the corresponding devices; e.g. the piezoelectric properties of AlN are enhanced upon tensile strain. We present here the transfer process of AlN thin-films onto polymer substrates; we discuss the influence of uniaxial strain on microstructural properties of AOP after in situ Raman spectroscopy assessments and relative strain evaluations by X-ray diffractions of AlN thin-films embedded in different types of stack configurations.

Published
2021

4. Temporary polymer bonding for the manufacturing of thin wafers: An innovative low temperature process

Author

L. Bally, T. Enot, Frank Fournel, Pierre Montmeat, Jerome Dechamp, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
010302 applied physics, chemistry.chemical_classification, [PHYS]Physics [physics], Fabrication, Materials science, Thermoplastic, Silicon, Mechanical Engineering, Process (computing), chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Flattening, chemistry, Mechanics of Materials, 0103 physical sciences, General Materials Science, Wafer, Adhesive, Composite material, 0210 nano-technology, Layer (electronics)
Abstract

The study deals with the handling of thin wafers in 3D integration. It concerns the fabrication of 300 mm wafers in industrial tools. Usually, the manufacturing is based on a temporary bonding process performed at 200 °C using a thermoplastic adhesive. In that condition bonding, thinning and dismounting are satisfactory. Moreover, the adhesive flattening during bonding results in an excellent thickness uniformity of the bonded pairs, with a small total thickness variation (TTV) value suitable for 3D integration. If the temperature is 150 °C or lower, the adhesive thickness uniformity is not acceptable anymore. An innovative temporary bonding process at low temperature has thus been developed. It consists in a carrier fabrication with highly uniform adhesive thickness. The standard coated adhesive is flattened with a first reversible temporary bonding at 210 °C. After a first dismounting, this carrier is then bonded to the target device wafer with a low bonding temperature, from 110 °C to 150 °C. Due to the pre-flattening, 80 μm thick silicon films with an excellent TTV value can thus be obtained even with a low bonding temperature required by the device wafer. Moreover, after the device wafer thinning, the final dismounting can be performed without any antisticking layer.

Published
2021

5. Transfer of an ultrathin single crystal silicon film from a Silicon On Insulator to a polymer

Author

Pierre Montmeat, François Rieutord, Frank Fournel, Samuel Tardif, E. Azrak, L.G. Michaud, C. Castan, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), and Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
Materials science, Silicon, Silicon on insulator, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 010402 general chemistry, 01 natural sciences, Biomaterials, Materials Chemistry, Wafer, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, chemistry.chemical_classification, business.industry, Polymer, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Isotropic etching, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Adhesive, 0210 nano-technology, business
Abstract

International audience; This study reports the manufacturing of Silicon On Polymer (SOP). It describes the transfer of a 200 mm diameter silicon thin film from a silicon on insulator (SOI) substrate to a flexible polymer. The thickness of the single-crystal silicon film was less than 200 nm and the transfer was achieved by bonding the SOI wafer to a temporary silicon carrier with an adhesive polymer. Various parameters of the transfer were investigated: adherence of the stack, temperature of bonding, temporary carrier and Si film thickness. The substrate and the SOI buried oxide were removed by mechanical grinding and chemical etching. The Si thin film was held on a flexible tape and the temporary carrier was dismounted. SOPs consisting of 20 to 205 nm thin Si films on a flexible polymer (230 μm) were successfully obtained. 200 mm diameter full wafers or patterned wafers could be transferred.

Published
2021

6. Unveiling the optical emission channels of monolayer semiconductors coupled to silicon nanoantennas

Author

Gonzague Agez, Frank Fournel, Kenji Watanabe, Vincent Larrey, Jean-Marie Poumirol, Vincent Paillard, Ioannis Paradisanos, Shivangi Shree, Aurélien Cuche, Takashi Taniguchi, Xavier Marie, Cedric Robert, Nicolas Mallet, Bernhard Urbaszek, Peter R. Wiecha, Guilhem Larrieu, Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Laboratoire de physique et chimie des nano-objets (LPCNO), Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nano-Optique et Nanomatériaux pour l'optique (CEMES-NeO), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université de Toulouse (UT)-Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), ANR-17-EURE-0009,NanoX,Science et Ingénierie à l'Echelle Nano(2017), ANR-19-CE24-0020,SPINOXIDE,Injection et détection de spin dans des nanostructures tout oxyde(2019), Université Toulouse 1 Capitole (UT1)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse 1 Capitole (UT1)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Service Informatique : Développement, Exploitation et Assistance (LAAS-IDEA), Laboratory for Integrated Micro Mechatronics Systems (LIMMS), and The University of Tokyo-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Photoluminescence, excitons, Silicon, Exciton, dielectric nanoantennas, chemistry.chemical_element, FOS: Physical sciences, 02 engineering and technology, Dielectric, 01 natural sciences, Mie-tronics, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], 010309 optics, strain, 0103 physical sciences, Monolayer, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Spontaneous emission, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Electrical and Electronic Engineering, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], ComputingMilieux_MISCELLANEOUS, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, transition metal dichalcogenides, 2D materials, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph], Electronic, Optical and Magnetic Materials, Semiconductor, chemistry, Optoelectronics, Light emission, 0210 nano-technology, business, Biotechnology
Abstract

Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stamping directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of solid-state emitters at room temperature. We show strongly enhanced emission and directivity modifications in room temperature photoluminescence mapping experiments. By varying TMD material (WSe2 versus MoSe2) transferred on silicon nanoresonators with various designs (planarized versus non-planarized), we experimentally separate the different physical mechanisms that govern the global light emission enhancement. For WSe2 and MoSe2 we address the effects of Mie Resonances and strain in the monolayer. For WSe2 an important additional contribution comes from out-of-plane exciton dipoles. This paves the way for more targeted designs of TMD-Si nanoresonator structures for room temperature applications., Comment: 10 pages, 5 figures

Published
2020

7. Comparison of AlGaInAs-Based Laser Behavior Grown on Hybrid InP-SiO₂/Si and InP Substrates

Author

Sylvain David, Jean Decobert, Nicolas Vaissiere, Delphine Néel, Cecilia Dupre, Frank Fournel, Claire Besancon, Christophe Jany, Dalila Make, Franck Bassani, Thierry Baron, Giancarlo Cerulo, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Laboratoire d'Intégration des Systèmes et des Technologies (LIST), and THALES-ALCATEL

Subjects
[PHYS]Physics [physics], Threshold current, Fabrication, Materials science, Laser diode, business.industry, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Laser, Epitaxy, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, 010309 optics, law, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Lasing threshold, ComputingMilieux_MISCELLANEOUS
Abstract

In this work, we present the fabrication process of a $3~\mu \text{m}$ -thick AlGaInAs-based vertical p-i-n laser diode structure grown on a directly bonded InP-SiO2/Si (InPoSi) substrate. High-quality epitaxial growth on InPoSi is reported. Based on these structures, the fabrication process of Fabry-Perot broad lasers is presented. Device performance is compared to the ones obtained from the same growth run on an InP substrate as a reference. High electrical properties of the n and p contacts are demonstrated. Lasing operation in the pulse regime is shown up to 50°C. Threshold current densities as low as 0.4 kA/cm 2 at 20°C are obtained for the laser on InPoSi, comparable to the ones obtained for the reference on InP substrate.

Published
2020

8. Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO 2 /Si substrate

Author

Loic Sanchez, Thierry Baron, S. David, V Muffato, Franck Bassani, Frank Fournel, Christophe Jany, C Besancon, Jean Decobert, J-P Le Goec, Cecilia Dupre, Nicolas Vaissiere, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Alcatel-Thales III-V Lab (III-V Lab), THALES, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), THALES [France], THALES [France]-ALCATEL, Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)

Subjects
Materials science, Silicon, chemistry.chemical_element, Bioengineering, 02 engineering and technology, Direct bonding, 010402 general chemistry, Epitaxy, 7. Clean energy, 01 natural sciences, General Materials Science, Wafer, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], Silicon photonics, business.industry, Mechanical Engineering, Heterojunction, General Chemistry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Outgassing, chemistry, Mechanics of Materials, Optoelectronics, 0210 nano-technology, business
Abstract

Hybrid integration of III-V materials onto silicon by direct bonding technique is a mature and promising approaches to develop advanced photonic integrated devices into the silicon photonics platform. In this approach, the III-V material stack is grown on an InP wafer in a unique epitaxial step prior to the direct bonding process onto the silicon-on-insulator wafer. Currently, no additional epitaxial regrowth steps are implemented after bonding. This can be seen as a huge limitation as compared to the III-V on III-V wafer mature technology where multi-regrowth steps are most often implemented. In this work, we have studied the material behavior of an InP membrane on silicon (InPoSi) under epitaxial regrowth conditions by metal-organic vapor phase epitaxy (MOVPE). MOVPE requires high-temperature elevation, typically above 600 °C. We show for the first time the appearance of voids at 400 °C in an InP seed (100 nm) directly-bonded onto a thermally oxidized Si substrate despite the use of a thick SiO2 oxide (200 nm) at the bonding interface. This phenomenon is explained by a weakening of the bonding interface while high-pressurized hydrogen is present. A kinetic study of the hydrogen lateral diffusion is carried out, enabling the assessment of its lateral diffusion length. To overcome the void formation, highly efficient outgassing trenches after bonding are demonstrated. Finally, high-quality AlGaInAs-based multi-quantum well (MQW) heterostructure surrounded by two InP layers was grown by MOVPE on InPoSi template patterned with outgassing trenches. This process is not only compatible with MOVPE regrowth conditions (650 °C under PH3) but also with conventional fabrication processes used for photonic devices.

Published
2020

9. Fabry Perot Laser Arrays Covering C+L Band Obtained by Selective Area Growth on InP-SiO2/Si Substrate

Author

Thierry Baron, Karim Mekhazni, Cecilia Dupre, Franck Bassani, F. Pommereau, Dalila Make, Nicolas Vaissiere, Delphine Néel, Sylvain David, Frank Fournel, Giancarlo Cerulo, Claire Besancon, Christophe Jany, and Jean Decobert

Subjects
Materials science, Laser diode, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, law.invention, Semiconductor laser theory, 020210 optoelectronics & photonics, law, Fiber laser, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Wafer, 0210 nano-technology, business, Layer (electronics), Lasing threshold, Fabry–Pérot interferometer
Abstract

Fabry-Perot laser arrays based on vertical p-i-n laser diode structures grown on InP layer directly bonded to Si wafer is presented. Lasing emission covering the C+L bands is achieved by means of a single-epitaxy Selective Area Growth (SAG) technology.

Published
2020

10. Development and adhesion characterization of a silicon wafer for temporary bonding

Author

M. Pellat, J. Thooris, G. Enyedi, Frank Fournel, Pierre Montmeat, T. Enot, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
010302 applied physics, chemistry.chemical_classification, Thermoplastic, Materials science, Polymers and Plastics, Silicon, General Chemical Engineering, chemistry.chemical_element, 02 engineering and technology, engineering.material, 021001 nanoscience & nanotechnology, 01 natural sciences, Biomaterials, [SPI]Engineering Sciences [physics], chemistry, Coating, Chemical-mechanical planarization, 0103 physical sciences, engineering, Wafer, Adhesive, Composite material, 0210 nano-technology, Silicon oxide, Layer (electronics)
Abstract

International audience; The development of a silicon temporary carrier for thin wafer handling for 3D applications was investigated. Process selection and optimization ended up with a silicon carrier entirely covered with an antistick layer based on a fluorinated polymer. The carrier preparation was quite easy because only one coating was used and no sticking edge zone was needed onto the carrier. The fluorinated coating led to a very hydrophobic behavior. When bonded with a thermoplastic glue, it also exhibited very antiadhesive properties because the adherence was as low as 0.4 J/m(2) and lower than the adherence of a stack without any antiadhesive layer (above 4 J/m(2)). The carrier was nevertheless suitable for different back side processes in 300 mm grinding, chemical cleaning, chemical mechanical polishing and silicon oxide deposition. Compared with a commercial carrier, it exhibited the same level of performance for the integration. The proposed carrier was compatible with a mechanical debonding of a thinned bonded structure with a silicon device wafer of 80 pm. The carrier recycling was possible without any new preparation.

Published
2018

11. Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO 2 /Si Substrate

Author

Claire Besancon, Thierry Baron, Cecilia Dupre, Jean Decobert, Franck Bassani, Nicolas Vaissiere, Sylvain David, Frank Fournel, Loic Sanchez, Christophe Jany, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Alcatel-Thales III-V Lab (III-V Lab), THALES, Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), THALES [France], Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), and THALES [France]-ALCATEL

Subjects
[PHYS]Physics [physics], Silicon photonics, Materials science, business.industry, 02 engineering and technology, Surfaces and Interfaces, Direct bonding, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, 020210 optoelectronics & photonics, Quality (physics), Si substrate, 0202 electrical engineering, electronic engineering, information engineering, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

12. Die to Wafer Direct Hybid Bonding Demonstration with High Alignment Accuracy and Electrical Yields

Author

C. Castan, P. Metzger, Loic Sanchez, Frank Fournel, A. Jouve, N. Raynaud, and N. Bresson

Subjects
Materials science, business.industry, Annealing (metallurgy), 020208 electrical & electronic engineering, Stacking, chemistry.chemical_element, 02 engineering and technology, Copper, chemistry, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Wafer, Internet of Things, business
Abstract

Die-To-Wafer (D2W) direct hybrid bonding is foreseen as a major breakthrough for the future of 3D components; however, its industrialization rises some additional challenges compared to Wafer-To-Wafer processing. This paper presents a 300mm wafer complete solution developed at LETI to improve bonding yield of D2W hybrid bonding using copper interconnections until the assessment of the electrical performances thanks to a dedicated 300mm electrical test vehicle and robust stacking system. Stackings with +/-1.5μm accuracy and excellent bonding interface have been obtained (80% bonding yield). After stacking and annealing, the die can be thinned down to 10μm without damage. Electrical yield measured on daisy-chains with more than 20.000 connections present more than 75% yield and shown very limited drift after preliminary environmental reliability tests. All these results confirmed the high industrial potential of D2W hybrid bonding technology.

Published
2019

13. High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi Substrate

Author

Franck Bassani, Sylvain David, Claire Besancon, Nicolas Vaissiere, Frank Fournel, Viviane Muffato, Thierry Baron, Jean-Pierre Le Goec, Jean Decobert, Christophe Jany, Cecilia Dupre, Alcatel-Lucent Bell Labs, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and THALES [France]-ALCATEL

Subjects
Silicon photonics, Active structure, Materials science, business.industry, Heterojunction, 02 engineering and technology, Direct bonding, Substrate (electronics), Epitaxy, 020210 optoelectronics & photonics, Quality (physics), Material quality, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

Epitaxial growth of high material quality $1.55\boldsymbol{\mu} \mathbf{m}$ AlGaInAs Multiquantum Wells Heterostructure on a directly-bonded InPoSi substrate has been developed for datacom applications.

Published
2019

14. Application of temporary adherence to improve the manufacturing of 3D thin silicon wafers

Author

T. Enot, K. Abadie, Pierre Montmeat, M. Wimplinger, Frank Fournel, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), CARTENE EU, and TSV HANDY programm

Subjects
chemistry.chemical_classification, Materials science, Polymers and Plastics, Silicon, business.industry, General Chemical Engineering, Intermediate layer, chemistry.chemical_element, 030206 dentistry, 02 engineering and technology, Structure type, Polymer, 021001 nanoscience & nanotechnology, Biomaterials, 03 medical and health sciences, [SPI]Engineering Sciences [physics], 0302 clinical medicine, Stack (abstract data type), chemistry, Polymer adhesive, Optoelectronics, Wafer, Adhesive, 0210 nano-technology, business
Abstract

International audience; The presented work concerns the manufacturing of very thin silicon wafers for a 3D Integrated Circuit industrial purpose. One of the key parameters of the 3D integration is the adherence of the bonded structure which involves silicon wafers and a polymer adhesive as an intermediate layer. The scope of the paper is to determine the suitable adherence of the stack for a successful manufacturing onto industrial tools. For this purpose the dismounting capacity of the fully automated equipment EVG (R) 850DB depending on the adherence energy is studied. Direct and polymer bonded silicon pairs are prepared. Their energies of adherence cover a large range of energy from 0.3 to 14 J/m(2). The automatic mechanical dismounting process is successful when the stack adherence is 1.2 J/m(2) or lower. This value does not depend on the bonded structure type direct bonded pairs or thinned polymer bonded pairs exhibit the same behavior regarding the dismounting capacity. And we demonstrate that the industrial manufacturing of 70 pm thin silicon wafers is possible if the adherence is 0.4 J/m(2) to 1.2 J/m(2).

Published
2019

15. Adhesion Energy and Bonding Wave Velocity Measurements

Author

Claudine Bridoux, Frank Fournel, Damien Radisson, Vincent Larrey, Hubert Moriceau, François Rieutord, Christophe Morales, Gaelle Mauguen, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
010302 applied physics, Materials science, Condensed matter physics, Wave velocity, Nanotechnology, 02 engineering and technology, Adhesion, 021001 nanoscience & nanotechnology, 01 natural sciences, [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph], [PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph], 0103 physical sciences, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS, Energy (signal processing)
Abstract

Direct bonding is now widely used in microelectronics for SOI elaboration or 3D integration. One of its main characterizations is the adherence energy, also called bonding energy, which estimates the strength of the bonded structure and its evolution with the different process parameters (annealing temperature, plasma activation…). The double cantilever beam (DCB) technique described by Maszara et al. [1] is the most common technic to measure the adherence energy. During the bonding another key characterization, the adhesion energy, deserves to be studied. This quantity gives information about the attractive forces involved when contacting the two surfaces and helps to understand the bonding wave velocity. Rieutord et al. [2] suggested an analytical model based on air flow dynamics between the two wafers and showed an analytical relation between the adhesion energy and the bonding wave velocity. In this work, a simple measurement apparatus derived from the DCB technique has been developed to measure the adhesion energy and the bonding wave velocity. Beams cut in bonded silicon wafers are opened at the bonding interface by a blade insertion; then the blade is suddenly partially removed allowing the structure to be bonded again. Recording multiple infra-red pictures one can follow the rebonding wave propagation and measure its velocity. The blade allows an easy and long debonded area in order to be sure to detect a stable rebonding wave speed. As a part of the blade is not totally removed, one can also determine the remaining debonded length when the wave propagation stops due to the known blade thickness. The energy associated to this length and calculated using El Zein [3] equation is the adhesion energy. In this experiment, upper and lower substrates of the bonded structure are allowed to be deformed. We also check that measurements performed on 2 cm wide beams are equivalent to larger beams in order to prevent any fluid edge effect as described by Radisson et al. [4]. So according to these considerations, we assume that the apparatus well describe the Rieutord’s hypothesis of infinite wide beams free to deform in the perpendicular direction and we can then compare our measures to his analytical predictions. We will show in this paper a very good correlation between the adhesion energy and the bonding wave speed. The surface energy has been varied by changing the surface roughness. Surprisingly, an interesting evolution of the adhesion energy after the blade stop will be presented. During 90 minutes, a slow increase of the bonding energy is observed at room temperature and 50% Relative Humidity. A mechanism will be proposed to explain this long time evolution mainly based on a slow kinetics of capillary condensation between the rough surfaces [5]. We will then discuss the choice of the energy adhesion value and show that long time values combined to measured velocities well agree with Rieutord’s model (cf. figure). REFERENCES [1] W. P. Maszara, G. Goetz, A. Caviglia and J. B. McKitterick, “Bonding of silicon wafers for silicon on insulator”, J. Appl. Phys., 64 p 4943 (1988) [2] F. Rieutord, B. Bataillou, and H. Moriceau, “Dynamics of a bonding front”, Physical Review Letters, vol. 94, pp. 236101, (2005). [3] M. S. El-Zein and K. L. Reijsnider, “Evaluation of GIC of a DCB Specimen Using an Anisotropic Solution”, Journal of Compo. Tech. & Research, 10(4), pp.151-155, (1988) [4] D. Radisson, “Direct bonding on patterned surfaces”, PhD thesis, Grenoble Univ., France (2014) [5] F. Fournel, C. Martin-Cocher, D. Radisson, V. Larrey, E. Beche, C. Morales, P. A. Delean, F. Rieutord, and H. Moriceau, “Water Stress Corrosion in Bonded Structures”, ECS Journal of Solid State Science and Technology, 4 (5) P124-P130 (2015) Figure 1

Published
2016

16. Transfer of Ultra-Thin Semi-Conductor Films onto Flexible Substrates

Author

Pascal Besson, Samuel Tardif, François Rieutord, Thierry Enot, Pierre Montméat, Gregory Enyedi, Isadora De Nigris Brandolisi, Riadh Kachtouli, Frank Fournel, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), Electrochemical Society, and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
010302 applied physics, Materials science, business.industry, Silicon on insulator, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, 01 natural sciences, Grinding, Dicing tape, Semiconductor, Etching (microfabrication), 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Wafer, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Composite material, Thin film, 0210 nano-technology, business
Abstract

Applying tensile strain on an undirect band gap semiconductor crystal is a very promising way to tune it into a direct band gap [1] , [2] . This basic feature can be an outstanding progress for the use of classical semiconductor as silicon or germanium in interesting optoelectronic applications [3] . One way to apply a tensile strain is to transfer an ultra-thin of semiconductor onto a flexible substrate [4] (erg: an organic polymer). The goal of this paper is to propose a simple way to obtain an ultra-thin silicon film ( As shown on figure, a first process is carried out onto 200 mm wafer with a SOI silicon film of 200nm and a buried oxide box of 400nm. No default is observed on the full stack after the grinding and etching steps used to remove the SOI backside substrate. No SiO2trace is also observed after the last dioxide etching. The thin silicon film is then characterized and no crack is observed. The stack is then laminated onto a frame with a Furukawa SP-537T-230 adhesive tape. The demounting of the carrier is easy and no default appears on the silicon film. The last process consists in removing the glue from the silicon. We obtain a 200 nm silicon film bonded onto the tape. Nevertheless, this glue removal leads to the appearance of some cracks ono the silicon thin film. A second process will then be presented in order to avoid the last glue removal steps and improving the final thin film quality. XRR characterizations of the transfered thin film will be presented as well as potential amount of tensile stress achievable with this unique structure. [1] Ju Li et al., MRS Bulletin, 39, pp 108-114, 2014 [2] Feng Zhang et al., Phys. Rev. Lett. 102, 2009 [3] Diode Lasers and Photonic Integrated Circuits, Second Edition, 2012 John Wiley & Sons, chap 4 [4]& Salvatore Giovanni A.et al., ACS NANO Volume 7, Issue: 10, P8809-8815, 2013 Figure 1

Published
2016

17. SiO2-SiO2 die-to-wafer direct bonding interface weakening

Author

V. Larrey, Frank Fournel, Loic Sanchez, Hubert Moriceau, and Toshiyuki Tabata

Subjects
business.product_category, Materials science, Silicon, Annealing (metallurgy), chemistry.chemical_element, 02 engineering and technology, Direct bonding, 01 natural sciences, Corrosion, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Molecule, Wafer, Electrical and Electronic Engineering, Composite material, Safety, Risk, Reliability and Quality, 010302 applied physics, 020208 electrical & electronic engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Chemical species, chemistry, Die (manufacturing), business
Abstract

Nowadays silicon (Si) based die-to-wafer (D2W) direct bonding technique is of great interest for enabling advanced 3D-integrated device applications. The small size of bonded dies makes an important difference from standard wafer-to-wafer direct bonding in terms of bonding mechanism or bonding strength evolution, because it allows rapid lateral diffusion of the chemical species related to direct bonding at the interface. In the case of hydrophilic SiO2-SiO2 direct bonding, water plays an essential role for bonding area evolution. Control of sample storage condition is therefore quite important because the humidity of storage environment may affect water diffusion at the bonding interface. However, there is a lack of in-depth study about the reliability of the SiO2-SiO2 D2W direct bonding due to the difficulty of evaluating the strength of the bonding interface. In this paper, using a previously developed modified four-point flexion test, we have systematically investigated the effect of sample storage before or after post-bonding annealing on SiO2-SiO2 D2W direct bonding energies. Weakening of the SiO2-SiO2 D2W direct bonding interfaces was observed during sample storage in humid ambiences after post-bonding annealing. This unexpected weakening effect could be explained by the water stress corrosion which occurs around asperity contacts of the bonded SiO2 surfaces due to water molecule diffusion at the bonding interface after post-bonding annealing.

Published
2020

18. (Invited) Water Transport Along Si/Si Direct Wafer Bonding Interfaces

Author

Francois Rieutord, Claudine Bridoux, Vincent Larrey, Didier Landru, Marwan Tedjini, Oleg Kononchuk, Samuel Tardif, Christophe Morales, Frank Fournel, Ivan Nikitskiy, Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), SOITEC SA, Electrochemical Society ECS, and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
wetting, Water transport, Materials science, business.industry, Wafer bonding, silicon, 02 engineering and technology, 010501 environmental sciences, 01 natural sciences, bonding, 6. Clean water, [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph], [PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph], adhesion, 020401 chemical engineering, Optoelectronics, 0204 chemical engineering, business, 0105 earth and related environmental sciences
Abstract

International audience; The transport of water in a highly confined gap made by the directbonding of low roughness silicon hydrophilic wafers is studied.We derive the equation for the transport of water from chemicalpotential gradients, using Stokes and conservation equations. Thetransport equation is found to be a Porous Medium Equation withexponent 2. A solution for this equation with stepwise boundaryconditions is given. The model is tested against different initialconditions for inward and outward flow, and different temperaturesand humidity levels.

Published
2018

19. A Direct Sensor to Measure Minute Liquid Flow Rates

Author

Benjamin Cross, Preeti Sharma, Cyril Picard, Elisabeth Charlaix, J. F. Motte, Frank Fournel, Laboratoire Interdisciplinaire de Physique [Saint Martin d’Hères] (LIPhy), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nanofabrication (NEEL - Nanofab), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and Nanofab (Nanofab )

Subjects
Materials science, Mechanical Engineering, Bioengineering, Nanofluidics, 02 engineering and technology, General Chemistry, Radius, Mechanics, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Tracking (particle physics), 01 natural sciences, Volumetric flow rate, Nanopore, Flow (mathematics), 0103 physical sciences, Particle, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, 0210 nano-technology, [PHYS.COND.CM-SCM]Physics [physics]/Condensed Matter [cond-mat]/Soft Condensed Matter [cond-mat.soft], ComputingMilieux_MISCELLANEOUS, Voltage
Abstract

Nanofluidics finds its root in the study of fluids and flows at the nanoscale. Flow rate is a quantity that is both central when dealing with flows and notoriously difficult to measure experimentally at the scale of an individual nanopore or nanochannel. We show in this letter that minute flow rate can be directly measured accumulating liquid over time within the compliant membrane of a commercial piezoresistive pressure sensor. Our flow rate sensor is versatile and can be operated independently of the nature of the liquid, flow profile, and type of nanochannel. We demonstrate this method by measuring the pressure-driven flow of silicon oil in a single nanochannel of average radius 200 nm. This approach gives reliable measurement of the flow rate up to 1 pL/min. Unlike other nanoscale flow measurements methods based, for instance, on particle tracking, our sensor delivers a direct voltage output suitable for nanoflow control applications.

Published
2018

20. From Direct Bonding Mechanism to 3D Applications

Author

V. Larrey, C. Mauguen, Christophe Morales, Frank Fournel, François Rieutord, C. Bridoux, and Hubert Moriceau

Subjects
Interconnection, Materials science, Silicon, business.industry, Wafer bonding, Silicon dioxide, Contact resistance, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Direct bonding, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, chemistry.chemical_compound, chemistry, Microelectronics, Microtechnology, 0210 nano-technology, business
Abstract

Nowadays Silicon direct wafer bonding is a mass production technology in many different applications. Starting around the sixties for industrial optical system elaboration, its major development is now in the microelectronic, microtechnology and optoelectronic fields. Obviously to reach such a mature level, the direct bonding mechanisms have to be established. The silicon or silicon dioxide direct bonding is now well established and direct bonding using metallic surfaces starts also to be investigated. For instance, copper or titanium direct bonding mechanism are established. The behavior of hybrid direct bonding using surfaces composed of both materials can then be understood. This hybrid bonding paves the way to high-density interconnection bonding for 3D applications.

Published
2018

21. Fine pitch 3D interconnections with hybrid bonding technology: From process robustness to reliability

Author

Simon Gousseau, Frank Fournel, Joris Jourdon, N. Bresson, V. Balan, M. Arnoux, Lucile Arnaud, C. Euvrard, Alexis Farcy, Sandrine Lhostis, S. Guillaumet, Y. Exbrayat, Stephane Moreau, Didier Lattard, Imed Jani, E. Deloffre, and A. Jouve

Subjects
Interconnection, Materials science, Fabrication, Extrapolation, Fine pitch, 02 engineering and technology, 021001 nanoscience & nanotechnology, Electromigration, 020303 mechanical engineering & transports, 0203 mechanical engineering, Robustness (computer science), ComputerApplications_MISCELLANEOUS, Scalability, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, 0210 nano-technology
Abstract

This paper presents the description of direct hybrid bonding technology for the fabrication of vertical interconnects thanks to wafer-to-wafer bonding. Process robustness is analyzed through morphological and electrical results. The electrical characterizations are discussed versus hybrid bonding pad dimensions and pitches. Electromigration study is carried out on different test vehicles with hybrid bonding interconnect dimensions below 5 μm. Experimental tests provide the parameters for lifetime extrapolation and show that the hybrid bonding module is immune to electromigration failures. Finally perspectives and key challenges for 3D interconnects scalability are given.

Published
2018

22. Polymer bonding temperature impact on bonded stack morphology and adherence energy

Author

P. Montméat, Frank Fournel, G. Louro De Oliveira, T. Enot, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
010302 applied physics, chemistry.chemical_classification, Materials science, Thermoplastic, Temperature control, Silicon, Polymer bonding, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, Total thickness, [SPI]Engineering Sciences [physics], chemistry, Hardware and Architecture, Anodic bonding, 0103 physical sciences, Homogeneity (physics), Adhesive, Electrical and Electronic Engineering, Composite material, 0210 nano-technology
Abstract

International audience; This paper deals with the effect of the silicon bonding temperature with thermoplastic adhesive. The bonding temperature exhibits a significant effect on the morphology and on the adherence energy of the bonded stack. A suitable temperature control leads to an excellent homogeneity of the bonded structure and an optimal total thickness variation (TTV) value. Using Brewer Bsi5150 adhesive material, 275 A degrees C appears as the optimal bonding temperature in order to optimize the TTV from 55 A mu m down to 5 A mu m. The adherence of the structure is also increased with high bonding temperatures. Indeed, the adherence energy is above 10 J/m(2) when the temperature is above 250 A degrees C. On the contrary, when the temperature is less than 150 A degrees C, the adherence is only around 1 J/m(2). Noteworthy, this value is suitable for back side processing and a mechanical debonding of the structure without any need of other specific layer which could lead to a very simple temporary bonding process.

Published
2018

23. Influence of water diffusion in deposited silicon oxides on direct bonding of hydrophilic surfaces

Author

J. Desomberg, A. Roule, Etienne Barthel, Frank Fournel, François Rieutord, Hubert Moriceau, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Sciences et Ingénierie de la Matière Molle (SIMM), Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université Pierre et Marie Curie - Paris 6 (UPMC), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
010302 applied physics, Materials science, Silicon, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Direct bonding, Thermocompression bonding, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, [SPI.MAT]Engineering Sciences [physics]/Materials, X-ray reflectivity, chemistry, Hardware and Architecture, Anodic bonding, Plasma-enhanced chemical vapor deposition, 0103 physical sciences, Electrical and Electronic Engineering, Thin film, Composite material, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Silicon oxide
Abstract

International audience; Direct bonding of PECVD SiOx films is of great interest in the field of microtechnologies for applications such as stacked structures, thin film transfers, whose fabrication processes still deserve to be investigated. This work deals with the influence of water diffusion in the SiOx films deposited onto 200mm Si wafers and its impact on adherence of hydrophilic surfaces. The as-deposited film nature induces various stresses. Stresses evolutions and water penetration are characterized and a correlation is made between the kinetics of both stress variations and water diffusion through the oxide thin films. Impacts of room temperature (RT) storage prior to bonding and thermal treatments applied for strengthening the bonding is shown. As direct bonding operates through surface asperities deformation, specific mechanical properties of such contact asperities can lead to a stronger bonding by increasing bonding area (Fournel 2015, Rieutord 2006; Ventosa 2008; Ventosa 2009). As the mechanical properties of silicon oxide material are greatly influenced by internal water concentration, aging and water diffusion on asperity have a real impact in term of direct bonding energy. Moreover at bonding interfaces, it is observed by X-ray reflectivity (XRR) that aging of deposited SiOx prior to bonding enables shallower bonding gaps, indicating better bonding interface closure which is coherent with the bonding energy enhancement. All these results confirm the link between water diffusion and hydrophilic surface adherence of deposited SiOx films.

Published
2018

24. 1μm Pitch direct hybrid bonding with <300nm wafer-to-wafer overlay accuracy

Author

N. Bresson, Severine Cheramy, A. Jouve, V. Balan, Lucile Arnaud, S. Guillaumet, Sandrine Lhostis, C. Euvrard-Colnat, C. Beitia, S. Mermoz, Y. Exbrayat, Frank Fournel, G. Mauguen, Alexis Farcy, M. Abdel Sater, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and STMicroelectronics [Crolles] (ST-CROLLES)

Subjects
Bonding process, Interconnection, Bonding, Materials science, business.industry, Surface treatment, Oxide, High density, chemistry.chemical_element, 02 engineering and technology, Overlay, Copper, Rough surfaces, Surface topography, [SPI]Engineering Sciences [physics], chemistry.chemical_compound, Surface roughness, 020210 optoelectronics & photonics, chemistry, Robustness (computer science), 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Wafer, business
Abstract

International audience; Copper/oxide hybrid bonding process has been extensively studied these past years as a key enabler for 3D high density application with top and bottom tier interconnection pitch below 10μm. Since 2015 hybrid bonding process robustness has been confirmed on complete electrical test vehicles [1,2] as well as commercial products [3] integrating copper to copper interconnection pitchs close to 6μm. To our knowledge, no results have been shown today demonstrating sub-1.5μm pitch copper hybrid bonding feasibility.

Published
2017

25. Strongly directional scattering from dielectric nanowires

Author

Thierry Baron, Arnaud Arbouet, Frank Fournel, Peter R. Wiecha, Gérard Colas des Francs, Aurélien Cuche, Christian Girard, Guilhem Larrieu, Vincent Paillard, Aurélie Lecestre, Vincent Larrey, Nano-Optique et Nanomatériaux pour l'optique (CEMES-NeO), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Nano-Optique et Forces (NOF ), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire Interdisciplinaire Carnot de Bourgogne [Dijon] (LICB), Université de Bourgogne (UB)-Université de Technologie de Belfort-Montbeliard (UTBM)-Centre National de la Recherche Scientifique (CNRS), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Centre d'élaboration de matériaux et d'études structurales ( CEMES ), Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ), Nano-Optique et Nanomatériaux pour l'optique ( CEMES-NeO ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Laboratoire Interdisciplinaire Carnot de Bourgogne ( LICB ), Université de Bourgogne ( UB ) -Centre National de la Recherche Scientifique ( CNRS ), Service Techniques et Équipements Appliqués à la Microélectronique ( LAAS-TEAM ), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] ( LAAS ), Institut National Polytechnique [Toulouse] ( INP ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ) -Institut National Polytechnique [Toulouse] ( INP ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Équipe Matériaux et Procédés pour la Nanoélectronique ( LAAS-MPN ), Laboratoire d'Electronique et des Technologies de l'Information ( CEA-LETI ), Université Grenoble Alpes [Saint Martin d'Hères]-Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ), Laboratoire des technologies de la microélectronique ( LTM ), Université Joseph Fourier - Grenoble 1 ( UJF ) -Centre National de la Recherche Scientifique ( CNRS ), Labau, Isabelle, Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Nano-Optique et Forces (NEEL - NOF), Laboratoire Interdisciplinaire Carnot de Bourgogne (ICB), Université de Technologie de Belfort-Montbeliard (UTBM)-Université de Bourgogne (UB)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Université de Bourgogne (UB)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Interdisciplinaire Carnot de Bourgogne (LICB), NOF - Nano-Optique et Forces, Institut Néel ( NEEL ), Centre National de la Recherche Scientifique ( CNRS ) -Université Grenoble Alpes [Saint Martin d'Hères]-Centre National de la Recherche Scientifique ( CNRS ) -Université Grenoble Alpes [Saint Martin d'Hères], Laboratoire Interdisciplinaire Carnot de Bourgogne [Dijon] ( LICB ), Université de Technologie de Belfort-Montbeliard ( UTBM ) -Université de Bourgogne ( UB ) -Centre National de la Recherche Scientifique ( CNRS ), and Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ) -Université Grenoble Alpes [Saint Martin d'Hères]

Subjects
Nanowire, Nanoparticle, FOS: Physical sciences, Physics::Optics, 02 engineering and technology, Dielectric, 01 natural sciences, [PHYS] Physics [physics], 010309 optics, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, Physics, [PHYS]Physics [physics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [ PHYS ] Physics [physics], [ PHYS.PHYS.PHYS-OPTICS ] Physics [physics]/Physics [physics]/Optics [physics.optics], Condensed matter physics, Condensed Matter - Mesoscale and Nanoscale Physics, Scattering, 021001 nanoscience & nanotechnology, Polarization (waves), Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Transverse plane, 0210 nano-technology, Excitation, Biotechnology, Visible spectrum
Abstract

It has been experimentally demonstrated only recently that a simultaneous excitation of interfering electric and magnetic resonances can lead to uni-directional scattering of visible light in zero-dimensional dielectric nanoparticles. We show both theoretically and experimentally, that strongly anisotropic scattering also occurs in individual dielectric nanowires. The effect occurs even under either pure transverse electric or pure transverse magnetic polarized normal illumination. This allows for instance to toggle the scattering direction by a simple rotation of the incident polarization. Finally, we demonstrate that directional scattering is not limited to cylindrical cross-sections, but can be further tailored by varying the shape of the nanowires., Comment: 12 pages, 6 figures + supporting informations of 12 pages, 19 figures

Published
2017

26. Wafer-Bonded AlGaAs//Si Dual-Junction Solar Cells

Author

Elias Veinberg-Vidal, Jeremy Da Fonseca, Christophe Jany, Christophe Lecouvey, Alejandro Datas, Mathieu Baudrit, Frank Fournel, Christophe Morales, Cecilia Dupre, Pierre Mur, Philippe Voarino, Thibaut Desrues, Clément Weick, Pablo Garcia-Linares, Laura Vauche, Anne Kaminski-Cachopo, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Instituto de Energía Solar, Universidad Politécnica de Madrid (IES-UPM)

Subjects
Materials science, Wafer bonding, multijunction, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, Gallium arsenide, chemistry.chemical_compound, law, 0103 physical sciences, Solar cell, Wafer, Metalorganic vapour phase epitaxy, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, photovoltaic solar cells, business.industry, Energy conversion efficiency, III-V on silicon, 021001 nanoscience & nanotechnology, Amorphous solid, surface-activated direct wafer bonding, chemistry, Energías Renovables, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Quantum efficiency, Electrónica, 0210 nano-technology, business
Abstract

session poster (I43); International audience; Monolithic two-terminal III-V on Si dual-junction (2J) solar cells were fabricated by means of Surface-Activated direct wafer Bonding (SAB). Al 0.2 Ga 0.8 As single-junction cells are grown on GaAs substrate by Metal-Organic Vapor Phase Epitaxy (MOVPE) and bonded at room temperature to independently fabricated Si solar cells. The n+-GaAs//n+-Si bonding interface is characterized by Transmission Electron Microscopy (TEM) revealing a 2-3 nm thick amorphous interlayer. The performance of the 1 cm 2 tandem cells, designed for low concentration applications, was studied by External Quantum Efficiency (EQE) and J-V measurements showing a power conversion efficiency of 17% under one-sun AM1.5G spectrum. To our knowledge, this is the highest efficiency ever reported for a wafer-bonded 2J III-V on Si solar cell. Limitations to performance have been identified and therefore higher efficiencies are expected.

Published
2017

27. Direct Bonding Mechanism of ALD-Al2O3 Thin Films

Author

Anne-Marie Charvet, Christophe Morales, V. Larrey, Frank Fournel, Jean-Marc Fabbri, François Rieutord, G. Audoit, Florence Madeira, E. Beche, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ECS, and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
Void (astronomy), Materials science, 02 engineering and technology, Direct bonding, 01 natural sciences, [PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph], 0103 physical sciences, Wet oxidation, Thin film, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Creative commons, Atmospheric temperature range, 021001 nanoscience & nanotechnology, [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph], Electronic, Optical and Magnetic Materials, Amorphous solid, Chemical engineering, Anodic bonding, Void (composites), 0210 nano-technology, Telecommunications, business, Layer (electronics), Internal stress
Abstract

Direct bonding mechanism of amorphous ALD alumina has been investigated from room temperature up to 1200◦C. By considering the evolution with temperature of free alumina surfaces and bonded configuration we highlight strong interaction between oxidant species and defect generation through interfacial oxidation. In the first case, the combination of internal stress and adhesion loss by dry O2 oxidation results in blister formations, whereas in the case of bonding structures, wet oxidation with H2 production at Silicon-Alumina interfaces explains void formation. Based on these established mechanisms we provide insights on alumina layer integration within a large temperature range. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0241505jss] All rights reserved.

Published
2014

28. Impact of Water Edge Absorption on Silicon Oxide Direct Bonding Energy

Author

Hubert Moriceau, Claudine Bridoux, Vincent Larrey, Frank Fournel, Marwan Tedjini, François Rieutord, Christophe Morales, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
010302 applied physics, business.industry, Chemistry, Nanotechnology, 02 engineering and technology, Direct bonding, Edge (geometry), 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph], [PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph], 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Absorption (electromagnetic radiation), Silicon oxide, Energy (signal processing), ComputingMilieux_MISCELLANEOUS
Abstract

Direct bonding of silicon and silicon dioxide thin films is now widely used in industry for SOI (Silicon on Insulator) elaboration for instance or in some backside imager manufacturing processes which are now at a stage of mass production processes. Silicon oxide capping layer is very often used as a convenient bonding layer allowing efficient topography planarization with classical CMP (Chemical Mechanical Planarization) process. Thus silicon oxide//silicon oxide direct bonding has been very developed when bonding interface behaviour deserves to be deeply studied. The bonding energy evolution is one of the key parameters and has been widely studied for many years [1,2,3]. Notably, water edge penetration at the bonding interface after the direct bonding was reported recently [4,5]. This work is then focused on the impact of water edge penetration on silicon oxide direct bonding energy values. 200 mm silicon wafers are thermally oxidized at 950 °C under steam atmosphere in order to growth 145 nm of silicon dioxide thin film. After classical RCA cleaning, these wafers are bonded at room temperature and ambient pressure. Just after the bonding, they are diced into 2 cm wide beams and annealed at 300 °C for bonding energy measurement under anhydrous atmosphere [3]. But after the dicing, the atmospheric water can start to penetrate the direct bonding interface. Two times are then considered: t1 is the time between the dicing and the annealing steps and t2 is the time between the annealing and the energy measurement. The bonding energy dependence regarding t1 and t2 is studied. It will be shown that increasing t1 is beneficial for the oxide/oxide bonding energy in contrary to t2 increase. A mechanism for bonding evolution will be proposed to explain these results mainly based on water stress corrosion influence. The annealing atmosphere will also be pointed out to explain some behaviours. Recommendations for storage time and atmosphere as well as for annealing conditions could then be formulated to make bonding energy values at the wafer edge suitable for subsequent device elaborations. REFERENCES [1] G. Kräuter, A. Schumacher, U. Gösele, Sensors and Actuators A: Physical, Vol. 70 (3), 271–275 (1998). [2] F. Fournel, C. Martin-Cocher, V. Larrey, H. Moriceau, F. Rieutord, WaferBond International Conference Brunswick Germany (2015) [3] F. Fournel, L. Continni, C. Morales, J. Da Fonseca, H. Moriceau, F. Rieutord, A. Barthelemy, I. Radu, J. Appl. Phys., 111, 104907 (2012) [4] M. Tedjini, F. Fournel, V. Larrey, F. Rieutord, WaferBond International Conference, Brunswick Germany (2015) [5] M. Tedjini, F. Fournel, H. Moriceau, V. Larrey, D. Landru, O. Kononchuk, S. Tardif, F. Rieutord, Submitted to Journal of Applied Physics.

Published
2016

29. InGaAs-OI Substrate Fabrication on a 300 mm Wafer

Author

Thierry Baron, Pascal Besson, Mickail Martin, Christophe Morales, Sebastien Sollier, Maryline Cordeau, Ionut Radu, Amelie Salaun, Thomas Signamarcheix, Ludovic Ecarnot, Marie-Christine Roure, Elodie Beche, Daniel Delprat, Christellle Veytizou, Gweltaz Gaudin, Sylvie Favier, Frank Fournel, Frédéric Mazen, Julie Widiez, and Patrice Gergaud

Subjects
Materials science, Fabrication, InGaAs, Wafer bonding, Insulator (electricity), 02 engineering and technology, Direct bonding, Epitaxy, 01 natural sciences, Smart CutTM, 0103 physical sciences, Al2O3, Surface roughness, Electronic engineering, Wafer, direct bonding, thin layer transfer, Electrical and Electronic Engineering, 010302 applied physics, Atomic force microscopy, business.industry, lcsh:Applications of electric power, lcsh:TK4001-4102, 021001 nanoscience & nanotechnology, Optoelectronics, 0210 nano-technology, business
Abstract

In this work, we demonstrate for the first time a 300-mm indium–gallium–arsenic (InGaAs) wafer on insulator (InGaAs-OI) substrates by splitting in an InP sacrificial layer. A 30-nm-thick InGaAs layer was successfully transferred using low temperature direct wafer bonding (DWB) and Smart CutTM technology. Three key process steps of the integration were therefore specifically developed and optimized. The first one was the epitaxial growing process, designed to reduce the surface roughness of the InGaAs film. Second, direct wafer bonding conditions were investigated and optimized to achieve non-defective bonding up to 600 °C. Finally, we adapted the splitting condition to detach the InGaAs layer according to epitaxial stack specifications. The paper presents the overall process flow that achieved InGaAs-OI, the required optimization, and the associated characterizations, namely atomic force microscopy (AFM), scanning acoustic microscopy (SAM), and HR-XRD, to insure the crystalline quality of the post transferred layer.

Published
2016
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30. Interface water diffusion in silicon direct bonding

Author

Vincent Larrey, Oleg Kononchuk, M. Tedjini, Didier Landru, François Rieutord, Samuel Tardif, Frank Fournel, Hubert Moriceau, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), SOITEC SA, Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, Physics and Astronomy (miscellaneous), Silicon, Annealing (metallurgy), Wafer bonding, Kinetics, chemistry.chemical_element, 02 engineering and technology, Direct bonding, 021001 nanoscience & nanotechnology, 01 natural sciences, Crystallography, chemistry, Chemical physics, Anodic bonding, 0103 physical sciences, Wafer, Water diffusion, 0210 nano-technology
Abstract

International audience; The kinetics of water diffusion through the gap formed by the direct bonding of two silicon wafers is studied using two different techniques. X-ray reflectivity is able to monitor the interface density changes associated with the water front progression. The water intake is also revealed through the defect creation upon annealing, creating a rim-like pattern whose extent also gives the water diffusion law. At room temperature, the kinetics observed by either technique are consistent with the Lucas-Washburn law for diffusion through a gap width smaller than 1 nm, excluding any significant no-slip layer thickness. Published by AIP Publishing.

Published
2016

31. Manufacturing and characterization of III-V on silicon multijunction solar cells

Author

Yohan Desieres, Pierre Mur, Pablo Garcia-Linares, Romain Thibon, P. Scheiblin, Celine Brughera, Alejandro Datas, Yannick Veschetti, Thierry Salvetat, V. Sanzone, Tiphaine Card, Elias Veinberg-Vidal, Jean Decobert, Frank Fournel, Cecilia Dupre, and Christophe Jany

Subjects
direct wafer bonding, Materials science, Silicon, Wafer bonding, multijunction, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), Multijunction photovoltaic cell, 7. Clean energy, 01 natural sciences, Energy(all), Photovoltaics, 0103 physical sciences, Rectangular potential barrier, 010302 applied physics, Tandem, business.industry, III-V on silicon, 021001 nanoscience & nanotechnology, Characterization (materials science), photovoltaics, chemistry, Energías Renovables, solar cells, Optoelectronics, Electrónica, 0210 nano-technology, business
Abstract

Tandem GaInP/GaAs//Si(inactive) solar cells were manufactured by direct wafer bonding under vacuum. At this early stage, an inactive silicon substrate was used (i.e. n+ Si substrate instead of an active n-p Si junction). Bonded devices presented an S-shaped J-V curve with a kink close to Voc caused by a built-in potential barrier at the III-V//Si interface that reduces the fill factor and therefore the efficiency of the device by 7% compared to the stand-alone GaInP/GaAs tandem cells. Nevertheless, losses in Jsc and Voc caused by the bonding process, account for less than 10%. AlGaAs single junction cells, designed to be bonded on a silicon cell for low concentrator photovoltaics (LCPV), were also manufactured reaching an efficiency of 15.9% under one sun AM1.5G spectrum for a 2cm2 cell.

Published
2016

32. Water Stress Corrosion in Bonded Structures

Author

D. Radisson, Hubert Moriceau, E. Beche, V. Larrey, P. A. Delean, Christophe Morales, François Rieutord, Frank Fournel, C. Martin-Cocher, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
010302 applied physics, Materials science, Silicon, Water stress, Silicon on insulator, chemistry.chemical_element, 02 engineering and technology, Direct bonding, Creative commons, Permission, Reuse, 021001 nanoscience & nanotechnology, 01 natural sciences, Engineering physics, [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph], Electronic, Optical and Magnetic Materials, Corrosion, [PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph], chemistry, 0103 physical sciences, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract

Direct bonding is now a well-known technique to join two flat surfaces without any additional material. This technique is used in many applications and especially in SOI (Silicon-On-Insulator) elaboration or in some backside imager manufacturing processes which are now almost in mass production. Direct bonding mechanism study is then very important in order to clearly understand this bonding behavior. Especially in the case of silicon or silicon dioxide hydrophilic surface, the role of water is essential. Water could lead to lots of different reactions at the bonding interface and especially the water stress corrosion could play an important role in the direct bonding mechanism. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0031505jss] All rights reserved.

Published
2015

33. (Invited) Water Stress Corrosion in Bonded Structures

Author

Damien Radisson, Hubert Moriceau, Chloé Martin-Cocher, Vincent Larrey, Elodie Beche, Francois Rieutord, Christophe Morales, Frank Fournel, Pierre-Antoine Delean, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and RIEUTORD, FRANCOIS

Subjects
Materials science, [PHYS.PHYS.PHYS-GEN-PH] Physics [physics]/Physics [physics]/General Physics [physics.gen-ph], Metallurgy, Water stress, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph], 0104 chemical sciences, Corrosion, [PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph], [PHYS.MECA.MEMA] Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph], Forensic engineering, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract

Direct bonding is now a well-known technique to join two flat surfaces without any additional material. This technique is used in many application and especially in SOI (Silicon on insulator) elaboration or in some backside imager manufacturing process which is now almost a mass production process. Direct bonding mechanism study is then very important in order to clearly understand this bonding behaviour. Especially in the case of silicon or silicon dioxide hydrophilic surface, the role of water is essential. Water could lead to lots of different reactions at the bonding interface and especially the water stress corrosion could play an important role in the direct bonding mechanism. After having reviewed the different silicon dioxide water stress corrosion in the literature [1,2], its influence in the direct bonding area will be pointed out. The direct bonding energy measurement, G, using the double cantilever (DCB) beam technique is for instance highly affected by the water stress corrosion [3, 4, 5, 6]. In addition to the direct bonding energy, this DCB technique is also very interesting to allow improvement of the direct bonding mechanism. Indeed, as the water stress corrosion only appears with siloxane bonds, it could be an interesting characterization of the classical silicon direct bonding reaction: Si-OH+Si-OH => Si-O-Si+H2O We will then show that siloxane bonds could appear already at room temperature and not only during the classical post bonding annealing process using for instance plasma activated bonding by changing the relative humidity of the characterization atmosphere. This water stress corrosion is also put into evidence during adhesion bonding energy and subsequent G measurement in which the hysteresis cycle which appears between these two measurements shows that specific siloxane bonds appear after the bonding wave propagation [7, 8]. Moreover, they put in evidence the effect of the atmosphere humidity in such hysteresis cycle. In addition to this, the water stress corrosion could be used to put into evidence the remaining water at the bonded interface [9]. Indeed in specific dioxide/dioxide bonding, Ventosa et al. [10] show that the water could remain at the interface until post bonding annealing treatment of 400°C during 2 hours and we will show that this can be seen by the water stress corrosion which takes place even in anhydrous atmosphere for this bonding type. Thus, the stress corrosion study in anhydrous atmosphere can deeply participate to the elaboration of a direct bonding mechanism. Moreover, one could think that the water stress corrosion plays an active role in the direct bonding evolution. Indeed, in other silicon dioxide processes, as CMP for instance, the water stress corrosion helps to hydrolyze the surface and to remove the polished material. The water stress corrosion might help the surface asperities to deform in order to increase the bonding area and thus the bonding energy. Furthermore, as the water stress corrosion rate depends on the temperature [11], it could also participate to the bonding energy evolution versus annealing temperature. The direct bonding mechanism could then be seen as a mechanical model of asperity deformation greatly helped by the trapped water at the bonding interface. Besides the bonding energy evolution, we will also discuss how the water stress corrosion study of bonded structure could be very interesting for the characterization of bonded interface chemical resistance. Indeed a good relation is seen between the chemical interface resistance and the water stress corrosion sensitivity [12]. The water stress corrosion study in bonded structure and especially in silicon or silicon dioxide bonding is then very fruitful and should deserve to be extended to other type of bonding interface and materials. REFERENCES [1] S.M. Wiederhorn, et al., J.Mater.Sci. (17) 3460 (1982). [2] M. Ciccotti, J.Phys.D (42) 214006 (2009) [3] O. Vallin, et al., Mat.Sci.andEng. R50 109 (2005). [4] T. Martini, et al.,Soc. 144(1) 354 (1997). [5] Y. Bertholet, et al., Sens.Actua.A 110 157 (2004). [6] F. Fournel, et al., J.Apl.Phys. (111) 104907 (2012). [7] D. S. Grierson et al., ECS Trans. 33(4) 573 (2010). [8] D. Radisson, to be published. [9] C. Martin-Cocher, to be published. [10] C. Ventosa, et al., J.Appl.Phys. 104 (2008). [11] S. N. Crichton et al., J.Am.Ceram.Soc. 82(11) 3097 (1999). [12] T. Suni, et al., ECS Trans. (19) 70 (2003).

Published
2014

34. Grazing incidence x-ray scattering investigation of Si surface patterned with buried dislocation networks

Author

Gilles Renaud, Joël Eymery, Frank Fournel, Frédéric Leroy, R. Lazzari, Denis Buttard, Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Service de Physique des Matériaux et Microstructures (SP2M - UMR 9002), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Oxydes en basses dimensions (INSP-E9), Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), and Direction de Recherche Technologique (CEA) (DRT (CEA))

Subjects
Surface (mathematics), Materials science, Physics and Astronomy (miscellaneous), Silicon, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Optics, 0103 physical sciences, Diffusion (business), ComputingMilieux_MISCELLANEOUS, Incidence (geometry), 010302 applied physics, business.industry, Scattering, X-ray, 021001 nanoscience & nanotechnology, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Grazing-incidence small-angle scattering, [PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph], Dislocation, 0210 nano-technology, business
Abstract

Investigation of a surface patterned by buried dislocation networks is performed with grazing incidence x-ray scattering (GIXS). It is shown that surface long-range undulations lead to a azimuth-dependent diffusion spot, the scattering vector of which is mainly parallel to the x-ray propagation direction. This unusual scattering direction with GIXS is explained by the scales of the scattering objects. A geometrical model is proposed to extract the periodicity of the surface from GIXS.

Published
2003

35. Confinement induced enhancement of the emission in Er-implanted Si/SiO2 quantum wells fabricated on SOI substrates

Author

Bernard Aspar, Vincent Calvo, H. Ulmer-Tuffigo, D. Jalabert, Jean-Luc Rouvière, David Sotta, Hubert Moriceau, Frank Fournel, Noël Magnea, E. Hadji, SOITEC SA, Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Centre de Microscopie Electronique, Université d'Orléans (UO), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and HADJI, Emmanuel

Subjects
[PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Photoluminescence, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, Silicon, Annealing (metallurgy), [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Analytical chemistry, chemistry.chemical_element, Silicon on insulator, 02 engineering and technology, [SPI.MAT] Engineering Sciences [physics]/Materials, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Erbium, Impurity, 0103 physical sciences, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum well, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, Mechanical Engineering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Ion implantation, chemistry, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business
Abstract

Single Si/SiO 2 quantum wells were fabricated using silicon on insulator (SOI) substrates, the upper barrier being a thin thermally oxidized Si layer. Samples were Er and O implanted at low energy in order to center their concentration profile in the well, and then annealed. A bulk Si sample implanted under the identical conditions was used as a reference. We present low temperature photoluminescence results using UV excitation in order to create photogenerated carriers mainly in the Si well. We show that the 1.54-μm photoluminescence is much more intense for Er in a well than for Er in implanted bulk silicon. We show that infrared emission occurs through an energy transfer mechanism from Si to Er centers. Confinement prevents the escape of photogenerated carriers towards the substrate and promotes energy transfer towards optical active erbium center.

Published
2001

36. Nanometric patterning with ultrathin twist bonded silicon wafers

Author

Noël Magnea, Bernard Aspar, Joël Eymery, Denis Buttard, Jean-Luc Rouvière, Frank Fournel, Hubert Moriceau, K. Rousseau, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Département de Recherche Fondamentale sur la Matière Condensée (DRFMC), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Diffraction, Silicon, Nanostructure, Materials science, chemistry.chemical_element, Dislocations, 02 engineering and technology, Substrate (electronics), 01 natural sciences, 0103 physical sciences, Materials Chemistry, Wafer, Composite material, Exponential decay, 010302 applied physics, Bonding, Metals and Alloys, Surfaces and Interfaces, Twist-boundary, Interface, 021001 nanoscience & nanotechnology, Hydrophobic, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Crystallography, chemistry, X-ray crystallography, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Dislocation, 0210 nano-technology
Abstract

International audience; Ultrathin films of silicon bonded on 4-inch (001) silicon wafers have been obtained by combining a direct hydrophobic silicon bonding technique with a layer transfer. The strain field produced by the dislocation network localized at the bonded interface is a good candidate to induce a long-range order growth of nanostructure. To be able to make this new kind of substrate, knowledge of the dislocation strain field extension is essential. Grazing incidence X-ray diffraction allows us to measure its spatial extension through the diffraction peak satellites due to different dislocation networks. The exponential decay of these peaks were measured and compared. We found that the decrease of the strain field extension is almost two times lower for the screw dislocation network than for the ‘mixed’ dislocations one. The film thickness control is then two times more critical for the screw dislocations.

Published
2000

37. Grazing incidence X-ray studies of twist-bonded Si/Si and Si/SiO2 interfaces

Author

D. Lübbert, Joël Eymery, Hubert Moriceau, Tilo Baumbach, Denis Buttard, François Rieutord, Frank Fournel, Département de Recherche Fondamentale sur la Matière Condensée (DRFMC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and Publica

Subjects
Diffraction, Silicon, Materials science, Wafer bonding, chemistry.chemical_element, X-ray reflectivity, 02 engineering and technology, Substrate (electronics), 01 natural sciences, Molecular physics, Optics, 0103 physical sciences, Electrical and Electronic Engineering, 010302 applied physics, Grazing incidence diffraction, business.industry, Scattering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Dislocation, 0210 nano-technology, business
Abstract

International audience; Twist-bonded Si/Si (0 0 1) and Si/SiO2 interfaces have been investigated by grazing incidence X-ray scattering methods. For Si/Si (0 0 1) bonding, conventional X-ray reflectivity reveals the good quality of the interfaces in terms of flatness and roughness. In-plane grazing incidence diffraction measurements around the (2 2 0) reflection show satellite peaks close to the substrate and the layer diffraction peaks. These sharp satellites are produced by a periodic displacement resulting from a very regular buried dislocation network. The Si/SiO2 bonding has been studied with X-ray reflectivity within a transmission geometry. The analysis of the data shows the high quality of both bonded Si/SiO2 and thermal oxide SiO2/Si interfaces.

Published
2000

38. Ultra thin silicon films directly bonded onto silicon wafers

Author

Jean-Luc Rouvière, Frank Fournel, Noël Magnea, Joël Eymery, Bernard Aspar, K. Rousseau, Hubert Moriceau, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Département de Recherche Fondamentale sur la Matière Condensée (DRFMC), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Silicon, Materials science, Oxide, chemistry.chemical_element, Dislocations, 02 engineering and technology, Surface finish, 01 natural sciences, Dissociation (chemistry), Condensed Matter::Materials Science, chemistry.chemical_compound, Optics, 0103 physical sciences, Surface roughness, General Materials Science, Wafer, Thin film, Composite material, 010302 applied physics, business.industry, Mechanical Engineering, Interface, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Hydrophobic, chemistry, BondingTwist-boundary, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Twist angle, 0210 nano-technology, business
Abstract

International audience; Ultra thin film of silicon bonded on 4 in. (001) silicon wafers have been obtained by combining a direct hydrophobic silicon bonded technique with a layer transfer. The twist angle between the ultra thin Si film and the Si substrate was varied from 0 to 15°. X-ray reflectivity measured the thickness and the roughness of the ultra thin films. Complementary results concerning the interface structure were obtained with high resolution transmission electronic microscopy. It is shown that an ultra thin film (a few nm) can be reproductively prepared upon the full 4 in. wafers. Moreover, this process gives very small thickness fluctuations and a small surface roughness. The bonding interface has a low concentration of oxide precipitates and presents two arrays dislocations respectively, due to the twist (screw dislocations) and a residual tilt angle (mixed dislocations) of the crystals. Dissociation of the screw dislocations is also observed on the lowest twist angle sample.

Published
2000

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