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Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO 2 /Si substrate
- Source :
- Nanotechnology, Nanotechnology, Institute of Physics, 2020, 31 (13), pp.135205. ⟨10.1088/1361-6528/ab5ce5⟩, Nanotechnology, 2020, 31 (13), pp.135205. ⟨10.1088/1361-6528/ab5ce5⟩
- Publication Year :
- 2020
- Publisher :
- HAL CCSD, 2020.
-
Abstract
- Hybrid integration of III-V materials onto silicon by direct bonding technique is a mature and promising approaches to develop advanced photonic integrated devices into the silicon photonics platform. In this approach, the III-V material stack is grown on an InP wafer in a unique epitaxial step prior to the direct bonding process onto the silicon-on-insulator wafer. Currently, no additional epitaxial regrowth steps are implemented after bonding. This can be seen as a huge limitation as compared to the III-V on III-V wafer mature technology where multi-regrowth steps are most often implemented. In this work, we have studied the material behavior of an InP membrane on silicon (InPoSi) under epitaxial regrowth conditions by metal-organic vapor phase epitaxy (MOVPE). MOVPE requires high-temperature elevation, typically above 600 °C. We show for the first time the appearance of voids at 400 °C in an InP seed (100 nm) directly-bonded onto a thermally oxidized Si substrate despite the use of a thick SiO2 oxide (200 nm) at the bonding interface. This phenomenon is explained by a weakening of the bonding interface while high-pressurized hydrogen is present. A kinetic study of the hydrogen lateral diffusion is carried out, enabling the assessment of its lateral diffusion length. To overcome the void formation, highly efficient outgassing trenches after bonding are demonstrated. Finally, high-quality AlGaInAs-based multi-quantum well (MQW) heterostructure surrounded by two InP layers was grown by MOVPE on InPoSi template patterned with outgassing trenches. This process is not only compatible with MOVPE regrowth conditions (650 °C under PH3) but also with conventional fabrication processes used for photonic devices.
- Subjects :
- Materials science
Silicon
chemistry.chemical_element
Bioengineering
02 engineering and technology
Direct bonding
010402 general chemistry
Epitaxy
7. Clean energy
01 natural sciences
General Materials Science
Wafer
Metalorganic vapour phase epitaxy
Electrical and Electronic Engineering
ComputingMilieux_MISCELLANEOUS
[PHYS]Physics [physics]
Silicon photonics
business.industry
Mechanical Engineering
Heterojunction
General Chemistry
021001 nanoscience & nanotechnology
0104 chemical sciences
Outgassing
chemistry
Mechanics of Materials
Optoelectronics
0210 nano-technology
business
Subjects
Details
- Language :
- English
- ISSN :
- 09574484 and 13616528
- Database :
- OpenAIRE
- Journal :
- Nanotechnology, Nanotechnology, Institute of Physics, 2020, 31 (13), pp.135205. ⟨10.1088/1361-6528/ab5ce5⟩, Nanotechnology, 2020, 31 (13), pp.135205. ⟨10.1088/1361-6528/ab5ce5⟩
- Accession number :
- edsair.doi.dedup.....2e880eb0d56cd66ea7bc3b9777d203e8