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41 results on '"Microélectronique Silicium - IEMN (MICROE SI - IEMN)"'

1. An Ultra-low-Power Integrated Heartbeat Detector for Wearable Sensors

Author: Benoit Larras, Antoine Frappe, Antoine Gautier, Robin Benarrouch, Marine Dael, Institut Supérieur de l'Electronique et du Numérique - Lille (ISEN-Lille), Institut supérieur de l'électronique et du numérique (ISEN)-Université catholique de Lille (UCL), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Laboratoire commun STMicroelectronics-IEMN T2, Institut supérieur de l'électronique et du numérique (ISEN), Microélectronique Silicium - IEMN (MICROE SI - IEMN), and Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)
Subjects: 020205 medical informatics, Heartbeat, business.industry, Computer science, 020208 electrical & electronic engineering, Detector, Electrical engineering, 2-electrode sensing, Wearable computer, Topology (electrical circuits), 02 engineering and technology, Energy consumption, 7. Clean energy, Heartbeat detection, [SPI]Engineering Sciences [physics], CMOS, Integrated circuit design, FD-SOI technology, 0202 electrical engineering, electronic engineering, information engineering, business, Wireless sensor network, Sleep mode
Abstract: International audience; To optimize energy consumption in wearable sensor networks, an efficient scheme is to set the sensors in sleep mode and wake them up to engage communication. However, synchronicity between the sensors needs to be assured by always-on local oscillators. This work proposes a different topology that takes advantage of the heart beat to wake-up wearable sensors. The electrocardiogram (ECG) is detected by two probes and then converted into a pulse signal. Using 28-nm FD-SOI CMOS technology, this solution is implemented on a circuit consuming 19 nW at a 900 mV supply voltage, hence suitable for long term and wearable applications.
Published: 2020
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2. Energy efficient heartbeat-based MAC protocol for WBAN employing body coupled communication

Author: Flavien Solt, Robin Benarrouch, Guillaume Tochou, Oliver Facklam, Antoine Frappe, Andreia Cathelin, Andreas Kaiser, Jan M. Rabaey, École polytechnique (X), STMicroelectronics [Crolles] (ST-CROLLES), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Berkeley Wireless Research Center [Berkeley] (BWRC), University of California [Berkeley], University of California-University of California, Laboratoire commun STMicroelectronics-IEMN T2, Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), University of California [Berkeley] (UC Berkeley), and University of California (UC)-University of California (UC)
Subjects: Medium Access Control (MAC), General Computer Science, Heartbeat, Computer science, Wearable, Energy Efficiency, Time division multiple access, Wearable computer, Communication Protocol, 02 engineering and technology, Synchronization, [SPI]Engineering Sciences [physics], Synchronization (computer science), 0202 electrical engineering, electronic engineering, information engineering, Wireless, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 020203 distributed computing, business.industry, Wireless Sensor Networks (WSN), Node (networking), 020208 electrical & electronic engineering, General Engineering, body area network (BAN), Media access control, lcsh:Electrical engineering. Electronics. Nuclear engineering, Bio-signal, business, Communications protocol, lcsh:TK1-9971, Computer network, Efficient energy use
Abstract: International audience; Wireless Body Area Networks (WBANs) are a fast-growing field fueled by the number of wearable devices developed for countless applications appearing on the market. To enable communication between a variety of those devices, the IEEE 802.15.6 standard was established. However, this standard has some intrinsic limitations in addressing the heterogeneity of the network nodes in terms of activity, data rates (from less than bit/s to multiple Mbit/s), energy availability, form factor, and location on, around or inside the body. To address these concerns, an alternative model is proposed that could serve as an extension of the IEEE 802.15.6 Standard. At its core is an adaptive and low-overhead synchronization scheme based on heartbeat sensing. This forms the base for a TDMA-based (Time Division Multiple Access) Media Access Control (MAC) protocol dedicated to multi-tier networks. While this effort focuses specifically on Capacitive Body-Coupled Communication (C-BCC), other physical layers can be easily incorporated as well. Based on these premises, this paper compares various random-access slot allocation approaches to accommodate the multiple data rates matching the system requirements, while incorporating a duty-cycling strategy anchored by heartbeat detection. This work proposes a novel, flexible, and robust solution, making use of heartbeat synchronization and addressing the corresponding challenges. It efficiently interconnects multiple device types over a wide range of data rates and targets a mesh of stars topology. At the cost of an increased communication latency, the proposed protocol outperforms the IEEE 802.15.4 MAC standard in terms of energy efficiency by a factor of at least 12x in a realistic scenario.
Published: 2020
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3. Distributed Clique-Based Neural Networks for Data Fusion at the Edge

Author: Benoit Larras, Antoine Frappe, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire commun STMicroelectronics-IEMN T2, ANR-18-CE24-0006,LEOPAR,Unité de pré-traitement pour systèmes intégrés à faible énergie(2018), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Clique, 0209 industrial biotechnology, Information privacy, Artificial neural network, business.industry, Computer science, 02 engineering and technology, Sensor fusion, [SPI]Engineering Sciences [physics], 020901 industrial engineering & automation, 0202 electrical engineering, electronic engineering, information engineering, Overhead (computing), 020201 artificial intelligence & image processing, Enhanced Data Rates for GSM Evolution, business, Wireless sensor network, Computer network
Abstract: International audience; Distributed smart sensors are more and more used in applications such as biomedical or domestic monitoring. However, each sensor broadcasts data wirelessly to the others or to an aggregator, which leads to energy-hungry sensors not ensuring data privacy. To tackle both challenges, this work proposes to distribute a part of a clique-based neural network in each sensor. This scheme allows standardizing data at the sensor level, ensuring privacy if the data is intercepted. Besides, a lower number of bits is transmitted, thus limiting the communication overhead. The circuit implementation is possible with the use of single-cluster iterative clique-based circuits. To this end, a hardware circuit has been fabricated and performs a classification using 115fJ per synaptic event per neuron in 83ns.
Published: 2020
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4. Evaluation of micro laser sintering metal 3D-printing technology for the development of waveguide passive devices up to 325 GHz

Author: Christophe Gaquiere, Daniel Gloria, C. Belem Goncalves, D. Titz, C. del Rio Bocio, V. Fiorese, Cyril Luxey, Frederic Gianesello, Emmanuel Dubois, Guillaume Ducournau, STMicroelectronics [Crolles] (ST-CROLLES), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Universidad Pública de Navarra [Espagne] = Public University of Navarra (UPNA), Laboratoire de Polytech Nice-Sophia (Polytech'Lab), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Université Côte d'Azur (UCA), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Puissance - IEMN (PUISSANCE - IEMN), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, Laboratoire commun STMicroelectronics-IEMN T1, PCMP CHOP, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Department of Electric and Electronic Engineering of the Public University of Navarra, Université Nice Sophia Antipolis (... - 2019) (UNS), Photonique THz - IEMN (PHOTONIQ THz - IEMN), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Materials science, horn antenna, Millimeter wave technology, 3D printing, 02 engineering and technology, waveguide, 01 natural sciences, 7. Clean energy, 3D-Printing, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Insertion loss, Selective laser melting, 010306 general physics, Waveguide antenna, Lithography, business.industry, 020206 networking & telecommunications, mmW, Selective laser sintering, Horn antenna, Optoelectronics, THz, Laser sintering LS, Antenna (radio), business, Waveguide, additive manufacturing
Abstract: International audience; In this paper, we propose an assessment up to 325 GHz of Micro Laser Sintering (MLS) metal 3D-Printing technology in order to achieve lightweight and cost-effective millimeter wave (mmW) passive function. We first designed and manufactured a bended WR5 waveguide in order to assess achievable roughness and insertion loss. In a second step, an existing 240 GHz choke horn antenna design, previously manufactured using metal coated Stereo Lithography Apparatus (SLA) and Selective Laser Melting (SLM) technologies, has been prototyped using MLS. Measured performances of the MLS antenna prototype have been benchmarked with SLA and DMLS ones. Achieved performances are promising since without any post processing MLS compete up to 325 GHz with metal coated SLA technology while it enables a metallic part manufactured in a single piece.
Published: 2020
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5. Thermal Analysis of Ultimately-Thinned-and-Transfer-Bonded CMOS on Mechanically Flexible Foils

Author: Jean-François Robillard, Etienne Okada, Arun Bhaskar, Flavie Braud, Justine Philippe, Emmanuel Dubois, Christine Raynaud, Francois Danneville, Daniel Gloria, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics, Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Materials science, Silicon, thin film, Silicon on insulator, chemistry.chemical_element, 02 engineering and technology, Substrate (printing), flexible electronics, 01 natural sciences, [SPI]Engineering Sciences [physics], Thermal conductivity, 0103 physical sciences, thermal management, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Thin film, Electrical conductor, SOI, 010302 applied physics, business.industry, CMOS, 021001 nanoscience & nanotechnology, Flexible electronics, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, lcsh:Electrical engineering. Electronics. Nuclear engineering, 0210 nano-technology, business, lcsh:TK1-9971, Polyimide, Biotechnology
Abstract: International audience; Thinned CMOS chips transfer-bonded onto a compliant host substrate remain to date the technology of choice for applications requiring both mechanical flexibility and high frequency operation. However, the use of poorly thermally conductive host substrates raises the problem of thermal management of flexible electronics, a topic poorly addressed in literature. In this letter, we report the analysis of flexible SOI-CMOS chips ultimately-thinned-and-transfer-bonded (UTTB) onto polyimide and copper substrates. While the temperature remains limited to ∼68 • C on the native silicon substrate or after transfer onto a copper host substrate, infrared thermography reveals temperature peaks of up to 118 • C on polyimide. The impact of self-heating in flexible SOI-CMOS is correlated with electrical performance for the three types of substrates. Beyond the property of mechanical flexibility it provides, a copper substrate is shown to slightly strengthen electrostatic integrity while maintaining a thermal landscape close to that of silicon.
Published: 2019
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6. Optimization of deep rib high speed phase modulators on 300mm industrial Si-photonics platform

Author: Emmanuel Dubois, Nathalie Vulliet, Florian Domengie, Sebastien Cremer, Sébastien Jan, Frederic Boeuf, Francoise Baille, Stephane Monfray, STMicroelectronics [Crolles] (ST-CROLLES), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Modulation, Previous generation, Materials science, business.industry, Germanium, Design of experiments, Phase (waves), Silicon photonics, 02 engineering and technology, Modulators, Cutoff frequency, Manufacturing, [SPI]Engineering Sciences [physics], 020210 optoelectronics & photonics, Amplitude, Photonics, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Silicon Doping, business, Waveguides
Abstract: International audience; This paper highlights the optimization of Deep Rib High Speed Phase Modulators for 400G applications thanks to the optimal choice of structure and implants through a Design Of Experiment analysis, including the proposal of a new Deep Rib HSPM with Z-implants. Results show 1,6dB gain in OMA (Optical Modulation of Amplitude) at the same cutoff frequency (fc=[2Pi*RC]-1) compared to the previous generation [1] with optimized vertical implants, and up to 2,15dB gain vs [1] with the new Z-implant Deep Rib device.
Published: 2020
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7. Capacitive body-coupled communication in the 400-500 MHz frequency band

Author: Jan M. Rabaey, Antoine Frappe, Robin Benarrouch, Andreas Kaiser, Andreia Cathelin, Arno Thielens, STMicroelectronics, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN], Universiteit Gent = Ghent University [UGENT], Microélectronique Silicium - IEMN [MICROELEC SI - IEMN], Berkeley Wireless Research Center [Berkeley] [BWRC], Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Universiteit Gent = Ghent University [Belgium] (UGENT), Berkeley Wireless Research Center [Berkeley] (BWRC), University of California [Berkeley], University of California-University of California, Laboratoire commun STMicroelectronics-IEMN T2, Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Ghent University [Belgium] (UGENT), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Universiteit Gent = Ghent University (UGENT), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), University of California [Berkeley] (UC Berkeley), and University of California (UC)-University of California (UC)
Subjects: Computer science, Frequency band, business.industry, Capacitive sensing, 020208 electrical & electronic engineering, Electrical engineering, Body coupled communication, 020206 networking & telecommunications, 02 engineering and technology, Imaging phantom, [SPI]Engineering Sciences [physics], Body area network, Electrode, 0202 electrical engineering, electronic engineering, information engineering, Wireless, Radio frequency, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract: International audience; One approach to enable wireless communication between body-worn nodes is to use capacitive body-coupled communication (CBCC). This technique, which uses capacitive electrodes as transducing elements, has previously been demonstrated at relatively low frequencies (
Published: 2019
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8. Towards broadband THz spectroscopy and analysis of sub-wavelength-size biological samples

Author: Melanie Lavancier, Jean Francois Lampin, Yue Bai, Sergey Mitryukovskiy, Emmanuel Dubois, Romain Peretti, Flavie Braud, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), ACKNOWLEDGMENTSThis work was partially supported by: i) the international chair of excellence 'ThOTroV' from region 'Hauts-deFrance', ii) the welcome talent grant 'NeFiStoV' from European metropole of Lille, iii) the 'TeraStoVe' grant from Isite ULNE, iv) the French government through the National Research Agency (ANR) under program PIA EQUIPEX LEAF ANR-11-EQPX-0025 and ExCELSiOR ANR 11-EQPX-0015, and v) the French RENATECH network on micro and nanotechnologies, Renatech Network, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Microélectronique Silicium - IEMN (MICROE SI - IEMN), and Photonique THz - IEMN (PHOTONIQ THz - IEMN)
Subjects: Materials science, Terahertz radiation, [PHYS.PHYS.PHYS-BIO-PH]Physics [physics]/Physics [physics]/Biological Physics [physics.bio-ph], Physics::Optics, 02 engineering and technology, 01 natural sciences, Sub wavelength, 010309 optics, Time-domain analysis, [SPI]Engineering Sciences [physics], Software, 0103 physical sciences, Broadband, Spectroscopy, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Optimization algorithm, [PHYS.PHYS]Physics [physics]/Physics [physics], business.industry, Ice, Biological system modeling, 021001 nanoscience & nanotechnology, Sample (graphics), Broadband communication, Optoelectronics, [PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph], 0210 nano-technology, business, Thz spectroscopy
Abstract: International audience; We report on our recent progress toward bio-photonic applications of terahertz time-domain spectroscopy. First, we developed a technique for the confinement of broadband terahertz pulses to a sub-wavelength-volume, and will present its applications to study biological samples. Second, we will discuss the analysis of terahertz time-trace data from bio samples using our Fit@TDS software based on the time-domain optimization algorithm that enables direct fitting of sample parameters. The combination of those (the experimental and the modelling) techniques is a robust tool for terahertz bio-photonics.
Published: 2019
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9. Femtosecond laser micromachining of crystalline silicon for ablation of deep macro-sized cavities for silicon-on-insulator applications

Author: Jean-François Robillard, Daniel Gloria, Flavie Braud, Emmanuel Dubois, Justine Philippe, Etienne Okada, Arun Bhaskar, Christophe Gaquiere, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Microélectronique Silicium - IEMN (MICROE SI - IEMN), STMicroelectronics, Puissance - IEMN (PUISSANCE - IEMN), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)
Subjects: 010302 applied physics, Materials science, Silicon, business.industry, chemistry.chemical_element, Silicon on insulator, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], Surface micromachining, chemistry, law, Fiber laser, 0103 physical sciences, Optoelectronics, Wafer, Crystalline silicon, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: We demonstrate the use of femtosecond laser micromachining for ablating macro-sized cavities in crystalline silicon. The method employed is laser milling in which the focused laser beam is raster scanned over the area to be removed. We report the achievement of very high volume ablation rates for the cavity of up to 8.48x106 μm3 s-1. To achieve such high rates, we make use of a high average power fiber laser source of 1030 nm wavelength and variable per pulse energy of up to 100 μJ. By carefully controlling the process variables such as pulse energy, repetition rate and scanner speed, the tradeoffs between micromachining quality and ablation rate are quantified. The developed process is applied on Siliconon-Insulator (SOI) wafers for improving performance of RF devices. By making use of laser removal and an additional step of selective silicon etch using XeF2, handler silicon is removed completely under RF circuits such as SP9T switch. The local removal of silicon under such circuits completely eliminates the losses and non-linearities caused by the coupling of RF signals to the semi-conducting substrate. Small-signal and large-signal RF measurements are performed before and after substrate removal to quantify the performance gain. The obtained performance after substrate removal is better than specialized RF-SOI substrates such as trap-rich SOI. This is of practical significance for next generation wireless technologies like 5G which operate at higher frequencies with stringent specifications. The proposed method is also potentially useful for fabricating membrane based devices in SOI technology such as pressure sensors.
Published: 2019
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10. Electronic contribution in heat transfer at metal-semiconductor and metal silicide-semiconductor interfaces

Author: Hamaoui, Georges, Horny, Nicolas, Hua, Zilong, Zhu, Tianqi, Robillard, Jean-François, Fleming, Austin, Ban, Heng, Chirtoc, Mihai, URCA - UFR Sciences exactes et naturelles (URCA UFR SEN), Université de Reims Champagne-Ardenne (URCA), Institut de Thermique, Mécanique, Matériaux (ITheMM), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Renatech Network, European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: [PHYS]Physics [physics], [SPI]Engineering Sciences [physics], lcsh:R, lcsh:Medicine, lcsh:Q, lcsh:Science, Article
Abstract: International audience; This work presents a direct measurement of the Kapitza thermal boundary resistance Rth, between platinum-silicon and platinum silicide-silicon interfaces. Experimental measurements were made using a frequency domain photothermal radiometry set up at room temperature. The studied samples consist of ≈50 nm of platinum and ≈110 nm of platinum silicide on silicon substrates with different doping levels. The substrate thermal diffusivity was found via a hybrid frequency/spatial domain thermoreflectance set up. The films and the interfaces between the two layers were characterized using scanning electron microscopy, transmission electron microscopy and energy-dispersive X-ray spectroscopy. X-ray diffraction was also used to determine the atomic and molecular structures of the samples. The results display an effect of the annealing process on the Kapitza resistance and on the thermal diffusivities of the coatings, related to material and interface changes. The influence of the substrate doping levels on the Kapitza resistance is studied to check the correlation between the Schottky barrier and the interfacial heat conduction. It is suggested that the presence of charge carriers in silicon may create new channels for heat conduction at the interface, with an efficiency depending on the difference between the metal’s and substrate’s work functions.
Published: 2018
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11. Low-complexity feature extraction unit for 'Wake-on-Feature' speech processing

Author: Jean Le Bellego, Angel Gonzalez, Benoit Larras, Simon Lecoq, Antoine Frappe, Institut Supérieur de l'Electronique et du Numérique - Lille (ISEN-Lille), Institut supérieur de l'électronique et du numérique (ISEN)-Université catholique de Lille (UCL), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut supérieur de l'électronique et du numérique (ISEN), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Computer science, business.industry, 020208 electrical & electronic engineering, Feature extraction, Context (language use), Pattern recognition, 02 engineering and technology, Speech processing, Background noise, Modeling and simulation, [SPI]Engineering Sciences [physics], Feature (computer vision), 0202 electrical engineering, electronic engineering, information engineering, Spectrogram, 020201 artificial intelligence & image processing, Artificial intelligence, business, Human voice
Abstract: International audience; In the context of energy-constrained automatic speech recognition, a modeling and simulation tool is presented to evaluate the hardware complexity of a feature extraction unit. The objective is to evaluate the minimal amount of features necessary for voice-activity detection, considering limited hardware resources. The obtained features are fed into a classification engine to evaluate the ability to differentiate human voice from background noise. While keeping a detection accuracy of passwords from a standard data-set at 90%, the study shows that the parameters of the feature extraction components, such as ADC resolution or energy quantization resolution, can be reduced to 8 bits and 6 bits, respectively, considering 8 frequency bands, in order to allow hardware-efficient implementations.
Published: 2018
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12. Large-area femtosecond laser ablation of Silicon to create membrane with high performance CMOS-SOI RF functions

Author: Etienne Okada, Christophe Gaquiere, Matthieu Berthomé, Emmanuel Dubois, Justine Philippe, Daniel Gloria, Arun Bhaskar, Jean-François Robillard, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics, Puissance - IEMN (PUISSANCE - IEMN), Laboratoire commun STMicroelectronics-IEMN T4, Renatech Network, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and ACKNOWLEDGMENT This work was supported by: i) the STMicroelectronicsIEMN common laboratory ii) the French government through the National Research Agency (ANR) under program PIA EQUIPEX LEAF ANR-11-EQPX-0025 and iii) the French RENATECH network on micro and nanotechnologies.
Subjects: Materials science, Silicon, Silicon on insulator, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 01 natural sciences, Femtosecond laser ablation, law.invention, [SPI]Engineering Sciences [physics], law, Etching (microfabrication), 0103 physical sciences, Insertion loss, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Capacitive coupling, business.industry, Substrate engineering, 021001 nanoscience & nanotechnology, Laser, chemistry, Femtosecond, RF front end module, Optoelectronics, 0210 nano-technology, business
Abstract: International audience; Femtosecond laser processing is a tool of increasing relevance for controlled etching of metals, semiconductors, and dielectrics with minimum collateral damage. We make use of this technique to remove silicon locally from the handler substrate of Silicon-on-Insulator (SOI) dies. By combining laser removal with XeF2 etching, we create thin membranes of SP9T switch, with the handler silicon completely removed underneath. This is done in order to mitigate the losses and non-linear products caused by capacitive coupling to the handler substrate. We demonstrate the improvement of linearity and insertion loss of a switch (Fig. 9 and Fig. 10) by employing the proposed method. This could be of potential interest for future wireless applications like 5G.
Published: 2018
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13. Device for light-matter interaction enhancement in the full THz range for precise spectroscopy of small volume samples

Author: Flavie Braud, Emmanuel Dubois, Romain Peretti, Emilien Peytavit, Jean-Francois Lampin, Sergey Mitryukovskiy, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Renatech Network, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), ACKNOWLEDGMENTSThis work was partially supported by: i) the international chair of excellence 'ThOTroV' from region 'Hauts-deFrance', ii) the welcome talent grant NeFiStoV from European metropole of Lille, iii) the French government through the National Research Agency (ANR) under program PIA EQUIPEX LEAF ANR-11-EQPX-0025 and ExCELSiOR ANR 11-EQPX-0015, and iv) the French RENATECH network on micro and nanotechnologies., Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), and Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université Polytechnique Hauts-de-France (UPHF)-Institut supérieur de l'électronique et du numérique (ISEN)
Subjects: Waveguide (electromagnetism), Materials science, Terahertz radiation, [PHYS.PHYS.PHYS-BIO-PH]Physics [physics]/Physics [physics]/Biological Physics [physics.bio-ph], Refractive index, 02 engineering and technology, 01 natural sciences, Absorption, [SPI]Engineering Sciences [physics], 0103 physical sciences, Dispersion (optics), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, Absorption (electromagnetic radiation), Spectroscopy, ComputingMilieux_MISCELLANEOUS, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, 021001 nanoscience & nanotechnology, Broadband communication, Photonics, Broadband antennas, Volume (thermodynamics), [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Powders, 0210 nano-technology, business
Abstract: International audience; We designed, fabricated, characterized and performed the first experimental uses of a device assembling a waveguide and two antennas. The goal of our device is to confine the broadband pulse of a time-domain spectroscopy setup in the slot of the waveguide with the minimum losses and dispersion and with the thinnest slot. With this device, we aimed at analysis a bio sample of the volume below 200 μ1.
Published: 2018
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14. Performance Evaluation of Silicon Based Thermoelectric Generators Interest of Coupling Low Thermal Conductivity Thin Films and a Planar Architecture

Author: Thierno-Moussa Bah, Stanjen Didenko, Emmanuel Dubois, Jean-François Robillard, Thomas Skotnicki, Stephane Monfray, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics [Crolles] (ST-CROLLES), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T4, European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: 010302 applied physics, Materials science, Silicon, business.industry, [SPI.NRJ]Engineering Sciences [physics]/Electric power, chemistry.chemical_element, 02 engineering and technology, Heat sink, 021001 nanoscience & nanotechnology, Thermal conduction, 7. Clean energy, 01 natural sciences, [SPI]Engineering Sciences [physics], Planar, Thermoelectric generator, Semiconductor, Thermal conductivity, chemistry, 0103 physical sciences, Thermoelectric effect, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business
Abstract: International audience; This study aims to compare a silicon ThermoElectric Generator design (TEG) with a commercial TEG made of BiTe alloy commercialized till recently by Micropelt. The objective is to show that recent advances in heat conduction modulation by silicon planar nanostructures may potentially improve thermoelectric performance of silicon to a competitive level with respect to conventional materials. To that end a planar converter architecture is proposed and modeled by Finite Elements Method and an analytical model based on thermal conductivities reported in the literature. Results show the absence or with a small capacity heat sink. This opens the way to the proposal of TEG based on Si material and compatible with mass production facilities of semiconductor manufacturers.
Published: 2018
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15. Phonon heat conduction in phononic crystal membranes

Author: Massoud, Antonin, Bluet, Jean-Marie, Orobtchouk, Regis, Lacatena, Valeria, Haras, Maciej, Didenko, Stanislav, Bah, Thierno-Moussa, Dubois, Emmanuel, Robillard, J.F., Chapuis, Pierre-Olivier, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Laboratoire commun STMicroelectronics-IEMN T4, Renatech Network, European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL)
Subjects: [SPI]Engineering Sciences [physics], [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], ComputingMilieux_MISCELLANEOUS
Abstract: International audience; We characterize nanometer-thin suspended silicon membranes in the pristine state or perforated in phononic crystals with periods below 100 nm, by means of scanning thermal microscopy (SThM) and Raman thermometry (RTh). Spatial resolution of SThM is shown to be similar to the one of RTh on these samples, once the air contribution is eliminated. Temperature distributions along the membranes are obtained, but require precise determination of the optical absorption for RTh as the membranes are also photonic objects. We find that the techniques are sensitive to cross-plane and in-plane heat conduction, and that the native oxide on both sides of the membranes cannot be neglected. The perforation depth of the holes is also a key quantity. For instance, the reduction of thermal conductivity in comparison to bulk silicon is 2.5 for a pristine membrane of 60 nm thickness, and limited to 6 for moderately-perforated arrays with pitch equal to thickness. The results are analyzed in light of phonon mean free path computations in complex geometries.
Published: 2018

16. Digital complex delta-sigma modulators with highly configurable notches for multi-standard coexistence in wireless transmitters

Author: Razvan-Cristian Marin, Antoine Frappe, Andreas Kaiser, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire commun STMicroelectronics-IEMN T2, and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Engineering, Optimization problem, business.industry, Frequency band, 020208 electrical & electronic engineering, Pole–zero plot, 020206 networking & telecommunications, 02 engineering and technology, Delta-sigma modulation, [SPI.TRON]Engineering Sciences [physics]/Electronics, Reduction (complexity), Noise, [SPI]Engineering Sciences [physics], Modulation, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Wireless, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract: International audience; This paper presents a complex delta-sigma modu-lator (CDSM) designed for integration in a digital transmitter chain targeting multi-standard coexistence with nearby receivers. The use of a DSM has the advantage of increased performance in terms of signal-to-noise-ratio in the band of interest. However, the resulting out-of-band noise becomes an issue for multi-standard coexistence, thus increasing the complexity of the subsequent filtering stage. This constraint could be relaxed in the DSM stage, by placing a complex zero near the frequency band, where a low noise level is needed. This is achieved by cross coupling the in-phase (I) and quadrature (Q) channels, thus obtaining a CDSM. A review of known design methods for CDSM revealed limitations regarding the poles/zeros optimization, and the configurability of the complex zeros placement. The proposed architecture introduces two additional cross couplings from the I and Q quantizers outputs in order to decorrelate the zeros placement and the poles optimization problem. Hence, the improved CDSM can be implemented using existing optimization tools, which reduces considerably the number of iterations and the computational effort. In addition, the resulting modulator can target different coexistence scenarios without the need of redesign, unlike other known methods. Simulation results show a noise level reduction of approximately 20-30-dB near specific frequency bands by the proposed CDSM scheme with respect to standard DSM. Finally, we show an efficient coarse/fine configurability mechanism, which is obtained when introducing additional delays in the cross-coupling paths. Index Terms-Delta sigma modulator (DSM), complex delta sigma modulator (CDSM), finite impulse response (FIR), multi-standard coexistence, digital transmitter.
Published: 2018
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17. A fully flexible circuit implementation of clique-based neural networks in 65-nm CMOS: [Invited]

Author: Benoit Larras, Cyril Lahuec, Paul Chollet, Fabrice Seguin, Matthieu Arzel, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Département Electronique (ELEC), Université européenne de Bretagne - European University of Brittany (UEB)-Télécom Bretagne-Institut Mines-Télécom [Paris] (IMT), ANR-18-CE24-0006,LEOPAR,Unité de pré-traitement pour systèmes intégrés à faible énergie(2018), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Université européenne de Bretagne - European University of Brittany (UEB)-Institut Mines-Télécom [Paris] (IMT)-Télécom Bretagne, Lab-STICC_IMTA_CACS_IAS, Laboratoire des sciences et techniques de l'information, de la communication et de la connaissance (Lab-STICC), École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Université Bretagne Loire (UBL)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Université Bretagne Loire (UBL)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT), Département Electronique (IMT Atlantique - ELEC), IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Université Bretagne Loire (UBL)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Université Bretagne Loire (UBL)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), and IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique)
Subjects: Analogue integrated circuit, Silicon, Neural Networks, Computer science, 02 engineering and technology, USable, Leakage currents, Synapse, [SPI]Engineering Sciences [physics], iterative circuit structure, [SDV.MHEP.CSC]Life Sciences [q-bio]/Human health and pathology/Cardiology and cardiovascular system, 0202 electrical engineering, electronic engineering, information engineering, Energy effciency, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Neural networks circuit, Electronic circuit, Neurons, Clique, Artificial neural network, business.industry, Complexity theory, 020208 electrical & electronic engineering, analog/mixed-signal circuit, [SPI.TRON]Engineering Sciences [physics]/Electronics, 020202 computer hardware & architecture, clique-based neural networks, classification circuit, CMOS, Hardware and Architecture, Synapses, [SDV.IB]Life Sciences [q-bio]/Bioengineering, State (computer science), Biological neural networks, business, [SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing, Computer hardware, Energy (signal processing)
Abstract: International audience; Clique-based neural networks implement low-complexity functions working with a reduced connectivity between neurons. Thus, they address very specific applications operating with a very low-energy budget. However, the implementation in the state of the art is not flexible and a fabricated circuit is only usable in a unique use case. Besides, the silicon area of hardwired circuits grows exponentially with the number of implemented neurons that is prohibitive for embedded applications. This paper proposes a flexible and iterative neural architecture capable of implementing multiple types of clique-based neural networks of up to 3968 neurons. The circuit has been integrated in an ST 65-nm CMOS ASIC and occupies a 0.21-mm 2 silicon surface area. The proper functioning of the circuit is illustrated using two application cases: a keyword recovery application and an electrocardiogram classification. The neurons outputs are updated 83 ns after a stimulation, and a neuron needs an energy of 115 fJ to propagate a change at the input to its output.
Published: 2018
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18. Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges

Author: Yves Morand, Louis Hutin, Donato Kava, Fabrice Nemouchi, Maud Vinet, Magali Gregoire, Emmanuel Dubois, N. Bernier, J. Borrel, Remy Gassilloud, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), University of Texas [El Paso] (UTEP ), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), French Public Authority through NANO, French Public Authority through Equipex [FDSOI11], and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Applied physics, business.industry, General Engineering, General Physics and Astronomy, Nanotechnology, Insulator (electricity), 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, Engineering physics, [SPI]Engineering Sciences [physics], Semiconductor, CMOS, Electrical resistivity and conductivity, 0103 physical sciences, 0210 nano-technology, business
Abstract: International audience; In this paper, in order to provide a comprehensive overview of the opportunities and limitations of the metal/insulator/semiconductor contacts approach, expected performance based on ideal contact simulations as well as key practical aspects are presented. While the former give us a glimpse of the theoretical potential of this paradigm, mainly to contact nFETs, the latter highlights concerns about the electrical characterization of such contacts along with issues occurring during their physical implementation. (c) 2017 The Japan Society of Applied Physics
Published: 2017
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19. Synthesis and characterization of low work function alkali oxide thin films for unconventional thermionic energy converters

Author: François Morini, V. Giorgis, J.-L. Codron, Jean-François Robillard, Emmanuel Dubois, Xavier Wallart, T. Zhu, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), European Research Council under the European Community ERCEuropean Research Council (ERC) [338179], French RENATECH network, STMicroelectronics-IEMN Common Laboratory, Laboratoire commun STMicroelectronics-IEMN T4, Renatech Network, European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), Université de Tours (UT)-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), and Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN)
Subjects: Materials science, Ultra-high vacuum, Analytical chemistry, Oxide, General Physics and Astronomy, chemistry.chemical_element, Thermionic emission, 02 engineering and technology, 7. Clean energy, 01 natural sciences, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], X-ray photoelectron spectroscopy, 0103 physical sciences, Work function, Thin film, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, chemistry, Caesium, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Current density
Abstract: International audience; In this work, we present the synthesis and the characterization of low work function thin films for Micro Thermionic Converters (MTC). The objective is producing a device operating at relatively low temperature (< 1000 K). We aim at improving the MTC efficiency by reducing the work function of the electrodes and increasing the emitted current density by alkali metal oxides electrodes coating. In particular, in this work, we analyse and compare the performances of two alkali metal oxides: potassium and caesium oxides. Our choice to exploit those materials relies on their low work function and their abundance. For both materials, we present the results on the synthesis of the oxides under high vacuum and controlled temperature. The oxide thin films were characterized by X-ray photoelectron spectroscopy, photoemission, and thermionic emission measurements. By exploiting the latter technique, a quantitative evaluation of the current density, emitted by the heated oxides, is obtained as a function of temperature. Our results demonstrate that it is possible to decrease the silicon work function by almost 3 eV, enabling significant thermionic currents despite relatively low temperatures (below 850 K). Published by AIP Publishing.
Published: 2016
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20. Fabrication of thin-film silicon membranes with phononic crystals for thermal conductivity measurements

Author: Maciej Haras, Jean-François Robillard, Valeria Lacatena, Emmanuel Dubois, Stephane Monfray, Thierno Moussa Bah, Stanislav Didenko, Thomas Skotnicki, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics-IEMN Common Laboratory, European Research CouncilEuropean Research Council (ERC)European Commission [338179], Laboratoire commun STMicroelectronics-IEMN T4, Renatech Network, European Project: 338179,EC:FP7:ERC,ERC-2013-StG,UPTEG(2013), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Fabrication, Materials science, Silicon, semiconductor materials measurements, phonons, chemistry.chemical_element, 02 engineering and technology, fabrication, 010402 general chemistry, 01 natural sciences, [SPI]Engineering Sciences [physics], Thermal conductivity, Electrical resistivity and conductivity, Seebeck coefficient, Thermoelectric effect, Electronic engineering, thin film devices, Electrical and Electronic Engineering, Thin film, business.industry, silicon, Thermoelectricity, 021001 nanoscience & nanotechnology, Thermoelectric materials, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, 0210 nano-technology, business
Abstract: Thermoelectricity struggles with the lack of cheap, abundant, and environmentally friendly materials. Silicon could overcome this deficiency by proposing high harvested power density, simplicity, availability, harmlessness, CMOS compatibility, and cost reduction. However, despite its high Seebeck coefficient and electrical conductivity, silicon is an inefficient thermoelectric material due to a high thermal conductivity ( $\kappa $ ). Modern nano-fabrication techniques enable reduction of $\kappa $ in silicon through attenuation of thermal phonons. In this letter, the design and the fabrication of nanostructured material onto $\kappa $ measurement platforms are presented. The proposed fabrication process is versatile and ensures compatibility with CMOS technologies. The proposed devices enable precise $\kappa $ measurement owing to a careful management of thermal losses. Characterization resulted in a two-fold ( $\kappa =59\pm 10$ W/m/K) reduction below bulk value for a 54-nm-thick plain silicon membranes. Further reduction is measured at $\kappa =34.5\pm 7.5$ W/m/K for membranes with phononic crystals.
Published: 2016
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21. Improved performance of flexible CMOS technology using ultimate thinning and transfer bonding

Author: Jean-François Robillard, Emmanuel Dubois, Christophe Gaquiere, Francois Danneville, Daniel Gloria, Justine Philippe, C. Raynaud, Matthieu Berthomé, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T1, Laboratoire commun STMicroelectronics-IEMN T4, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: 010302 applied physics, Flexibility (engineering), Materials science, Silicon, dBm, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, CMOS integrated circuits, 01 natural sciences, radiofrequency integrated circuits, Power (physics), Stress (mechanics), MOSFET, [SPI]Engineering Sciences [physics], chemistry, CMOS, Electrical resistivity and conductivity, Logic gate, 0103 physical sciences, Electronic engineering, harmonic analysis, 0210 nano-technology, integrated circuit bonding
Abstract: International audience; Based on a simple process referred to as ultimate thinning-and-transfer-bonding (UTTB), this paper shows that the high-frequency performance of advanced CMOS technologies can be combined with mechanical flexibility and transparency. The invariance upon thinning, transfer and flexure of both DC and RF CMOS electrical characteristics is demonstrated. Specific to high power RF applications, the complete elimination of the silicon handler improves the second and third harmonic rejection by 36 and 40 dBm, respectively, when compared to a high resistivity SOI substrate.
Published: 2016
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22. A Digital Delay Line with Coarse/Fine tuning through Gate/Body biasing in 28nm FDSOI

Author: Antoine Frappe, Andreas Kaiser, Laurent Clavier, Ilias Sourikopoulos, Andreia Cathelin, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Ecole nationale supérieure Mines-Télécom Lille Douai (IMT Lille Douai), Institut Mines-Télécom [Paris] (IMT), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Renatech Network, Laboratoire commun STMicroelectronics-IEMN T2, and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Delay calculation, Engineering, business.industry, Dynamic range, Delay element, 020208 electrical & electronic engineering, Delay line oscillator, Biasing, 02 engineering and technology, FDSOI, body-biasing, Digital delay line, [SPI]Engineering Sciences [physics], CMOS, Logic gate, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, digital delay line, business, AND gate
Abstract: International audience; This paper discusses the design and characterization of a programmable digital delay line. The core of the proposed architecture is a thyristor-type delay element featuring the capability for coarse/fine tuning without using any additional hardware. This is made possible by taking advantage of body biasing features available in 28nm FDSOI CMOS. Body biasing offers unique performance characteristics, notably a very low sensitivity to the biasing voltage. The prototype delay line was designed featuring thermometer-code multi-stage activation and gate/body biasing control. A delay range from 560ps to 16.13ns is exhibited for the delay line with a 2GS/s input stream. The unit delay cell exhibits fs/mV sensitivity combined with an order of magnitude larger delay dynamic range and an energy efficiency of only 12.5 fJ/event.
Published: 2016
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23. Considerations on Fermi-depinning, dipoles and oxide tunneling for oxygen-based dielectric insertions in advanced CMOS contacts

Author: Magali Gregoire, Emmanuel Nolot, H. Grampeix, M. Vinet, Fabienne Allain, J.P. Barnes, E. Ghegin, Claude Tabone, Louis Hutin, Philippe Rodriguez, Emmanuel Dubois, Fabrice Nemouchi, Yves Morand, J. Borrel, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics, Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire commun STMicroelectronics-IEMN T4, and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Materials science, business.industry, Oxide, Insulator (electricity), Dielectric, Atomic layer deposition, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Semiconductor, chemistry, Electrical resistivity and conductivity, Electronic engineering, Optoelectronics, business, Silicon oxide, Quantum tunnelling
Abstract: International audience; We present experimental and simulated J-V characteristics of Metal/Insulator/Semiconductor (MIS) junctions aiming at improving the contact resistivity for advanced CMOS nodes. We show that an Atomic Layer Deposition (ALD)-based Al2O3 process may induce a native silicon oxide regrowth leading to an additional tunneling resistance in series. A modelling-based analysis of Metal/Insulator/Insulator/Metal (MIIS) contacts, including the potentially beneficial interfacial dipole, provides a new outlook on high-kappa/SiO2 bilayers for low resistivity contacts.
Published: 2016
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24. Multi-standard semi-digital FIR DAC: A design procedure

Author: Andreas Kaiser, Fikre Tsigabu Gebreyohannes, Antoine Frappe, Malaviya National Institute of Technology [Jaipur], Utah Center for Advanced Imaging Research [Salt Lake City] (UCAIR), University of Utah, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Engineering, Finite impulse response, business.industry, 020208 electrical & electronic engineering, Transistor, Transmitter, 02 engineering and technology, Transfer function, 020202 computer hardware & architecture, law.invention, [SPI]Engineering Sciences [physics], law, 0202 electrical engineering, electronic engineering, information engineering, Baseband, Electronic engineering, Routing (electronic design automation), business, Design methods, Impulse response
Abstract: International audience; A configurable transmitter architecture which enables the integration of the baseband blocks of two recent WiFi standards is presented. The novelty of the architecture is based on flexible finite impulse response digital-to-analog converter whose transfer function can be modified to fit the required transmit masks of the standards being implemented. The design methodology of this configurable FIR DAC is compared and contrasted with a traditional multi-bit digital-to-analog converter design procedure. A discussion of the salient points from circuit implementation perspective is also done in detail. Mainly, the performance metrics that are prioritized for 160MHz IEEE 802.11ac and single carrier IEEE 802.11ad are highlighted; a placement method suited for a FIR DAC is covered and some of the limiting factors associated with the method are also detailed. The architecture and the placement method introduced solve some of the main roadblocks in the implementation of semi-digital FIR DACs with long impulse response.
Published: 2016
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25. Progress and opportunities in high-voltage microactuator powering technology towards one-chip MEMS

Author: Isao Mori, Satoshi Morishita, Yuki Okamoto, Eric Lebrasseur, B. Stefanelli, Andreas Kaiser, Masanori Kubota, Atsushi Hirakawa, Yoshio Mita, The University of Tokyo (UTokyo), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratory for Integrated Micro Mechatronics Systems (LIMMS), The University of Tokyo (UTokyo)-Centre National de la Recherche Scientifique (CNRS), ANR-11-BS03-0005,Smart Blocks,Smart Blocks : une surface modulaire et reconfigurable composée de MEMS pour le transport rapide d'objets fragiles et de produits pharmaceutiques(2011), ANR-16-CE33-0022,ProgrammableMatter,Matériel et logiciel pour créer de la matière programmable(2016), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: 010302 applied physics, Microelectromechanical systems, Physics and Astronomy (miscellaneous), Computer science, business.industry, 020208 electrical & electronic engineering, General Engineering, Electrical engineering, General Physics and Astronomy, High voltage, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Electrical connection, [SPI]Engineering Sciences [physics], Microactuator, CMOS, Hardware_GENERAL, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, business, Energy source, Voltage, Electronic circuit
Abstract: International audience; In this paper, we address issues and solutions for micro-electro-mechanical-systems (MEMS) powering through semiconductor devices towards one-chip MEMS, especially those with microactuators that require high voltage (HV, which is more than 10 V, and is often over 100 V) for operation. We experimentally and theoretically demonstrated that the main reason why MEMS actuators need such HV is the tradeoff between resonant frequency and displacement amplitude. Indeed, the product of frequency and displacement is constant regardless of the MEMS design, but proportional to the input energy, which is the square of applied voltage in an electrostatic actuator. A comprehensive study on the principles of HV device technology and associated circuit technologies, especially voltage shifter circuits, was conducted. From the viewpoint of on-chip energy source, series-connected HV photovoltaic cells have been discussed. Isolation and electrical connection methods were identified to be key enabling technologies. Towards future rapid development of such autonomous devices, a technology to convert standard 5 V CMOS devices into HV circuits using SOI substrate and a MEMS postprocess is presented. HV breakdown experiments demonstrated this technology can hold over 700 to 1000 V, depending on the layout. (C) 2018 The Japan Society of Applied Physics.
Published: 2018
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26. Thermoelectric Energy Conversion: How Good Can Silicon Be?

Author: François Morini, Jean-François Robillard, Stephane Monfray, Valeria Lacatena, Thomas Skotnicki, Emmanuel Dubois, Maciej Haras, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics-IEMN Common Laboratory, European Research CouncilEuropean Research Council (ERC)European Commission [338179], French RENATECH Network, Laboratoire commun STMicroelectronics-IEMN T4, and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Materials science, Thermal properties, Silicon, Thin films, chemistry.chemical_element, FOS: Physical sciences, Nanotechnology, [SPI]Engineering Sciences [physics], Thermal conductivity, Energy storage and conversion, Thermoelectric effect, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), General Materials Science, Thin film, Power density, Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Mechanical Engineering, Materials Science (cond-mat.mtrl-sci), Computational Physics (physics.comp-ph), Condensed Matter Physics, Thermoelectric materials, Simulation and modeling, Cost reduction, Semiconductor, chemistry, Semiconductors, Mechanics of Materials, Electrical properties, Optoelectronics, business, Physics - Computational Physics
Abstract: International audience; Lack of materials which are thermoelectrically efficient and economically attractive is a challenge in thermoelectricity. Silicon could be a good thermoelectric material offering CMOS compatibility, harmlessness and cost reduction but it features a too high thermal conductivity. High harvested power density of 7 W/cm(2) at Delta T= 30 K is modeled based on a thin-film lateral architecture of thermo-converter that takes advantage of confinement effects to reduce the thermal conductivity. The simulation leads to the conclusion that 10 nm thick Silicon has 10 x higher efficiency than bulk. (C) 2015 Elsevier B.V. All rights reserved.
Published: 2016
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27. Physical study by surface characterizations of sarin sensor on the basis of chemically functionalized silicon nanoribbon field effect transistor

Author: Kacem Smaali, Stéphane Lenfant, Thierry Melin, Emmanuel Dubois, D. Guerin, Jean-Pierre Simonato, Dominique Vuillaume, V. Passi, Alexandre Carella, L. Ordronneau, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre de Développement des Technologies Avancées (CDTA), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Département des Technologies des NanoMatériaux (DTNM), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de L'Energie Solaire (INES), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Physique-IEMN (PHYSIQUE-IEMN), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Nanostructures, nanoComponents & Molecules - IEMN (NCM-IEMN), ANRFrench National Research Agency (ANR) [ANR-10-CSOSG-003], French RENATECH network, Renatech Network, Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Physique - IEMN (PHYSIQUE - IEMN), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Nanostructures, nanoComponents & Molecules - IEMN (NCM - IEMN), and ANR-10-SECU-0003,CAMIGAZ,Capteurs autonomes miniatures communicants pour la détection de gaz de combats(2010)
Subjects: Materials science, Silicon, Analytical chemistry, chemistry.chemical_element, FOS: Physical sciences, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Capacitance, law.invention, [SPI]Engineering Sciences [physics], law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Gas detector, Physical and Theoretical Chemistry, Kelvin probe force microscope, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Transistor, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Hysteresis, General Energy, chemistry, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, Volta potential
Abstract: Surface characterizations of an organophosphorus (OP) gas detector based on chemically functionalized silicon nanoribbon field-effect transistor (SiNR-FET) were performed by Kelvin Probe Force Microscopy (KPFM) and ToF-SIMS, and correlated with changes in the current-voltage characteristics of the devices. KPFM measurements on FETs allow (i) to investigate the contact potential difference (CPD) distribution of the polarized device as function of the gate voltage and the exposure to OP traces and, (ii) to analyze the CPD hysteresis associated to the presence of mobile ions on the surface. The CPD measured by KPFM on the silicon nanoribbon was corrected due to side capacitance effects in order to determine the real quantitative surface potential. Comparison with macroscopic Kelvin probe (KP) experiments on larger surfaces was carried out. These two approaches were quantitatively consistent. An important increase of the CPD values (between + 399 mV and + 302 mV) was observed after the OP sensor grafting, corresponding to a decrease of the work function, and a weaker variation after exposure to OP (between - 14 mV and - 61 mV) was measured. Molecular imaging by ToF-SIMS revealed OP presence after SiNR-FET exposure. The OP molecules were essentially localized on the Si-NR confirming effectiveness and selectivity of the OP sensor. A prototype was exposed to Sarin vapors and succeeded in the detection of low vapor concentrations (40 ppm)., Paper and supporting information, J. Phys. Chem. C, 2016
Published: 2016
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28. Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part II

Author: Louis Hutin, J. Borrel, Olivier Rozeau, Sebastien Martinie, Emmanuel Dubois, Magali Gregoire, Maud Vinet, Marie-Anne Jaud, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), French Public Authorities through the NANO Program, French National Research AgencyFrench National Research Agency (ANR) [FDSOI11], ST-LETI Joint Program, Laboratoire commun STMicroelectronics-IEMN T4, Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), and STMicroelectronics [Crolles] (ST-CROLLES)
Subjects: 02 engineering and technology, Ring oscillator, Dielectric, 01 natural sciences, Omega, [SPI]Engineering Sciences [physics], Electrical resistivity and conductivity, 0103 physical sciences, MOSFET, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Ohmic contact, n and pFETs cointegration, 010302 applied physics, Physics, Condensed matter physics, business.industry, Doping, Electrical engineering, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Semiconductor, ring oscillators (ROs) frequency, Metal/insulator/semiconductor (MIS) contacts, 0210 nano-technology, business
Abstract: In this paper, the insertions of dielectric in metal/insulator/semiconductor contacts are considered via their associated impact on the dc and ac performances. Based on dc output characteristics projections, we found that single insertion and/or single-metal integration schemes are unlikely to result in simultaneously successful Fermi-level pinning alleviation on both n and pFETs. We show that the added $C_{\mathrm { {MIS}}}$ contributes to a significant extra improvement in terms of intrinsic inverter delay. In particular, an optimal configuration consisting of Pt-liner/ p-Si and Zr/TiO2(15A)/n-Si contacts can lead to a ring oscillator frequency higher than that of p and nFETs each flanked by ideal ohmic contacts with $10^{-9}~\Omega \cdot {\mathrm{ cm}}^{2}$ resistivity.
Published: 2016
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29. Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part I

Author: Julien Borrel, Louis Hutin, Olivier Rozeau, Marie-Anne Jaud, Sebastien Martinie, Magali Gregoire, Emmanuel Dubois, Maud Vinet, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), French Public Authorities through the NANO Program, French National Research AgencyFrench National Research Agency (ANR) [FDSOI11], ST-LETI Joint Program, Laboratoire commun STMicroelectronics-IEMN T4, STMicroelectronics [Crolles] (ST-CROLLES), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: 010302 applied physics, T-WKB approximation, CMOS, T WKB approximation, 02 engineering and technology, 1-D modeling, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, [SPI]Engineering Sciences [physics], nFET and pFET cointegration, 0103 physical sciences, metal/insulator/semiconductor (MIS) contacts, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, 0210 nano-technology, metal/insulator/ semiconductor (MIS) contacts
Abstract: International audience; Aiming at overcoming the Fermi-level pinning (FLP) occurring at the metal/semiconductor interfaces, metal/insulator/semiconductor (MIS) contacts to n-Si and p-Si are usually treated in separate optimization studies, yet with no particular insight on their technological compatibility. In this paper, using 1-D analytical modeling of MIS contacts, it is shown that in order to fully benefit from FLP mitigation on both n- and p-type Si, a single-insertion/single-metallization scheme cannot be considered. In addition, it is demonstrated that associating given numerical values of contact resistivity with MIS contacts results in a thorny problem, since their I-V characteristics are nonsymmetric nonlinear.
Published: 2016
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30. Application-oriented performance of RF CMOS technologies on flexible substrates

Author: Jean-François Robillard, Christophe Gaquiere, A. Lecavelier, Francois Danneville, C. Raynaud, Emmanuel Dubois, Matthieu Berthomé, Daniel Gloria, Justine Philippe, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Subjects: Materials science, Silicon, chemistry.chemical_element, Silicon on insulator, 02 engineering and technology, flexible electronics, 01 natural sciences, 7. Clean energy, [SPI]Engineering Sciences [physics], 0103 physical sciences, Electronic engineering, 010302 applied physics, Flexibility (engineering), business.industry, CMOS integrated circuits, 021001 nanoscience & nanotechnology, radiofrequency integrated circuits, silicon-on-insulator, Transparency (projection), Integrated injection logic, chemistry, CMOS, Logic gate, Optoelectronics, Radio frequency, integrated circuit bonding, 0210 nano-technology, business
Abstract: International audience; Ultimate-thinning-and-transfer-bonding (UTTB) of RF SOI-CMOS chips is demonstrated on plastic, metal and glass substrates. Beyond process simplicity, UTTB can be tailored to meet specific application requirements like ultra mechanical flexibility, heat dissipation, transparency while retaining same f(T)/f(max) performance and improving harmonic rejection when compared to conventional rigid SOI.
Published: 2015
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31. Ultra-foldable/stretchable wideband RF interconnects using laser ablation of metal film on a flexible substrate

Author: Sofiene Bouaziz, Jean-François Robillard, Emmanuel Dubois, Matthieu Berthomé, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire commun STMicroelectronics-IEMN T4, and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Materials science, Laser ablation, business.industry, Coplanar waveguide, stretchable, Bend radius, Electrical engineering, meander RF interconnects, mechanically flexible, Conductor, Horseshoe-shape, [SPI]Engineering Sciences [physics], Meander (mathematics), CPW transmission line, Foldable, millimeter-wave, laser ablation, Optoelectronics, Transmission coefficient, business, Polyethylene naphthalate, Electrical conductor
Abstract: International audience; In this paper we demonstrate the feasibility of mechanically flexible and stretchable coplanar waveguide (CPW) transmission lines at millimeter-wave frequencies. Our approach is based on meander horseshoe-shaped CPW line on 125 mu m-thick Polyethylene Naphthalate (PEN) dielectric substrate. The desired meander shape pattern of the conductor is structured using a nanosecond pulsed laser source operating at 351 nm wavelength by the precise patterning of a 1 mu m-thick conductive film deposited on a plastic foil. The cutout is realized by following the outer meander shape path of the structure providing an ultra-flexible/ stretchable interconnect line. An experimental attenuation below 0.12 dB.mm(-1) for a 13 mm length of signal conductor has been obtained at 40 GHz. When submitted to bending on a semi-cylinder of known radius, the measured transmission coefficient show small variations less than 0.05 dB even for bending radius in the centimeter range.
Published: 2015
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32. Semi-digital FIR DAC for low power single carrier IEEE 802.11ad 60GHz transmitter

Author: Antoine Frappe, Fikre Tsigabu Gebreyohannes, Andreas Kaiser, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), ANR-11-INFR-0011, ANR-11-INFR-0011,WENDY,WiGig FlExible TraNsceiver ADvanced SYstem(2011), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Engineering, IEEE 802, Finite impulse response, business.industry, 020208 electrical & electronic engineering, Clock rate, Transmitter, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, [SPI]Engineering Sciences [physics], 0202 electrical engineering, electronic engineering, information engineering, Baseband, Electronic engineering, Wireless, business, Linear filter, Phase-shift keying
Abstract: International audience; IEEE 802.11ad (WiGig) is an emerging multi-Gb/s wireless standard in the unlicensed 60GHz spectrum. This work presents system level validation of a Single Carrier (SC), QPSK modulated WiGig transmitter based on a semi-digital Finite Impulse Response (FIR) Digital-to-Analog Converter (DAC). The 1.76GS/s complex baseband input signal is upsampled by two to a clock frequency of 3.52GHz. In order to introduce channel shaping and meet the standard requirements, the structure implements a 16 th -order direct-form Root-Raised Cosine (RRC) FIR filter. Transmit mask and EVM requirements are met with a large margin while allowing a 14% random mismatches on the current sources implementing the FIR DAC coefficients.
Published: 2015
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33. Characterization of flexible CMOS technology tranferred onto a metallic foil

Author: Jean-Francois Robillarcf, Aurélien Lecavelier des Etangs-Levallois, Francois Danneville, Emmanuel Dubois, Philip Latzel, Justine Philippe, Daniel Gloria, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: 010302 applied physics, Materials science, business.industry, thin film, CMOS, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, 01 natural sciences, Die (integrated circuit), Active layer, [SPI]Engineering Sciences [physics], Stack (abstract data type), 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, inorganic substrate, Thin film, business, stainless steel, Layer (electronics), metallic bonding, FOIL method, Metallic bonding
Abstract: International audience; In this work we demonstrate a method to transfer high-performance industrial CMOS circuits thinned down to 5.7 mu m and bond onto a 25-mu m-thick stainless steel foil with a 800-nm-thick indium layer. The bonding is performed at the temperature of 100 degrees C with an applied pressure of 1.2 bar. The die stack transferred onto the metallic substrate comprises the 200-nm-thick active layer and the 5.5-mu m-thick interconnection multilayer stack resulting in a light, compact, and bendable thin film. We unveil that DC and RF performances are invariant after the transfer onto this metallic substrate. Unity-current-gain cutoff and maximum frequencies as high as 163/188 GHz for n-MOSFETs and 100/159 GHz for p-MOSFETs have been measured.
Published: 2015
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34. Toward quantitative modeling of silicon phononic thermocrystals

Author: Maciej Haras, Stephane Monfray, Jean-François Robillard, Emmanuel Dubois, Thomas Skotnicki, Valeria Lacatena, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), European Research Council under the European CommunityEuropean Research Council (ERC) [338179], ANRTFrench National Research Agency (ANR), Laboratoire commun STMicroelectronics-IEMN T4, and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Physics, Work (thermodynamics), Physics and Astronomy (miscellaneous), Condensed matter physics, Silicon, Phonon, Mean free path, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Thermoelectric materials, 01 natural sciences, [SPI]Engineering Sciences [physics], Thermal conductivity, chemistry, 0103 physical sciences, Thermal, 010306 general physics, 0210 nano-technology, Order of magnitude
Abstract: International audience; The wealth of technological patterning technologies of deca-nanometer resolution brings opportunities to artificially modulate thermal transport properties. A promising example is given by the recent concepts of "thermocrystals" or "nanophononic crystals" that introduce regular nano-scale inclusions using a pitch scale in between the thermal phonons mean free path and the electron mean free path. In such structures, the lattice thermal conductivity is reduced down to two orders of magnitude with respect to its bulk value. Beyond the promise held by these materials to overcome the well-known "electron crystal-phonon glass" dilemma faced in thermoelectrics, the quantitative prediction of their thermal conductivity poses a challenge. This work paves the way toward understanding and designing silicon nanophononic membranes by means of molecular dynamics simulation. Several systems are studied in order to distinguish the shape contribution from bulk, ultra-thin membranes (8 to 15 nm), 2D phononic crystals, and finally 2D phononic membranes. After having discussed the equilibrium properties of these structures from 300K to 400 K, the Green-Kubo methodology is used to quantify the thermal conductivity. The results account for several experimental trends and models. It is confirmed that the thin-film geometry as well as the phononic structure act towards a reduction of the thermal conductivity. The further decrease in the phononic engineered membrane clearly demonstrates that both phenomena are cumulative. Finally, limitations of the model and further perspectives are discussed. (C) 2015 AIP Publishing LLC.
Published: 2015
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35. Fabrication of integrated micrometer platform for thermoelectric measurements

Author: J-F. Robillard, Emmanuel Dubois, Valeria Lacatena, François Morini, Maciej Haras, Stephane Monfray, Thomas Skotnicki, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire commun STMicroelectronics-IEMN T4, and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Fabrication, Materials science, Silicon, business.industry, Hybrid silicon laser, chemistry.chemical_element, Thermoelectric materials, Micrometre, [SPI]Engineering Sciences [physics], Thermal conductivity, chemistry, Thermoelectric effect, Electronic engineering, Optoelectronics, business, ComputingMilieux_MISCELLANEOUS, Power density
Abstract: Good electrical performance of Silicon enables high harvested power density allowing Silicon to compete with conventional thermoelectric materials such as Bi 2 Te 3 or Sb 2 Te 3 . High value of thermal conductivity eliminating the use of Silicon in thermoelectricity is no longer an unbeatable drawback since the possibility of reduction has been established and confirmed. Thermal conductivity reduction by a factor 3 over bulk value is reported in 70nm thick Silicon. The Silicon thermal conductivity can be reduced even 100× over bulk when using dedicated patterning which can block the propagation of phonons responsible for heat transport [3]. This reduction will have significant influence in launching industrialization of CMOS compatible thermogenerators.
Published: 2014
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36. Digital radio frequency signal generation towards ultimate transmitters

Author: Antoine Frappe, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Engineering, Digital down converter, business.industry, 020208 electrical & electronic engineering, Transmitter, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, Software-defined radio, Digital radio, Signal, Amplitude modulation, [SPI]Engineering Sciences [physics], 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Digital signal, business, Digital signal processing
Abstract: International audience; This invited paper exposes our latest developments in the field of digital transmitters by focusing on digital and mixed-signal processing blocks, such as delta-sigma modulators, high-speed interpolation filters and digital-to-RF converters. The goal is to demonstrate that radio-frequency signal generation by mostly-digital means is competitive and not so far from being a realistic option. It will also discuss the numerous remaining bottlenecks to go through to provide reliable and attractive solutions.
Published: 2014
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37. An adaptive synchronization scheme for 60 GHz subsampling receivers

Author: Antoine Frappe, Razvan-Cristian Marin, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Computer science, 020208 electrical & electronic engineering, Process (computing), 02 engineering and technology, Power (physics), Time–frequency analysis, [SPI]Engineering Sciences [physics], CMOS, Convergence (routing), Synchronization (computer science), 0202 electrical engineering, electronic engineering, information engineering, Calibration, Electronic engineering, Phase-shift keying
Abstract: International audience; This paper presents an adaptive method for symbol synchronization in a WiGig subsampling receiver targeting low power applications, such as high data-rate communications in mobile devices. Taking advantage of the configurability of the receiver, the proposed implementation can achieve symbol synchronization in less than 2.5 μs, relative to the data frequency f data = 1.76 GHz. A fast detection algorithm is introduced in order to reduce convergence time by a factor between 4 and 40. The convergence is achieved when finding the correct sampling instant corresponding to the beginning of a new symbol and the delay between in-phase I and quadrature-phase Q paths. These 2 parameters have been identified to have the highest impact on the performances of the receiver. It is shown that the proposed method is totally independent of the process and temperature variations and can achieve synchronization even if there is no calibration process for the cells used in the circuit.
Published: 2014
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38. Estimation of 60-GHz channels based on energy detection

Author: Ilias Sourikopoulos, Stéphane Mebaley-Ekome, Antoine Frappe, Eric Pierre Simon, Laurent Clavier, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Télécommunication, Interférences et Compatibilité Electromagnétique - IEMN (TELICE - IEMN), Institut de Recherche sur les Composants logiciels et matériels pour l'Information et la Communication Avancé - USR 3380 (IRCICA), Université de Lille-Centre National de la Recherche Scientifique (CNRS), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Télécommunication, Interférences et Compatibilité Electromagnétique (IEMN-TELICE), and Centre National de la Recherche Scientifique (CNRS)-Université de Lille
Subjects: Engineering, business.industry, 020208 electrical & electronic engineering, Fast Fourier transform, 020206 networking & telecommunications, 02 engineering and technology, Delay spread, [SPI]Engineering Sciences [physics], Time of arrival, Robustness (computer science), 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Demodulation, Time domain, business, Multipath propagation, Computer Science::Information Theory, Communication channel
Abstract: International audience; Estimation of time-varying channels is a common challenge for receiver architectures in wireless communications. Coherent receivers may require good knowledge of the channel impulse response for demodulation of the received symbols, after equalization of a dense multipath channel. However, very few methods for single-band transmission can offer a very fast estimation process that avoids using digital complex algorithms with matrix inversion or FFT. In this paper, we propose a new channel estimation scheme implemented in the continuous time domain, so as to feed a selective equalizer with information about reflected components delays and amplitudes. The principle relies on the evaluation of the spreading in time of the energy of multipath components and the approximation of their time of arrival. The robustness of our method gives a fast overview of the channel impulse response with an accurate and short-time estimation process. Analysis and simulations are performed to demonstrate the enhancement of the BER performance of a coherent receiver after equalization with the proposed method. ADC and equalizer implementation issues are also discussed.
Published: 2014
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39. Subsampling techniques applied to 60 GHz wireless receivers in 28 nm CMOS

Author: Baptiste Grave, Antoine Frappe, Andreas Kaiser, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), The authors wish to acknowledge the support of the European Commission through the ENIAC MIRANDELA project and the French National Reseach Agency. Staff of the Characterization and Telecom platforms at IEMN and IRCICA are thanked for support during measurements of this chip and STMicroelectronics for the access to the technology., European Project: 120221,EC:FP7:SP1-JTI,ENIAC-2009-1,MIRANDELA(2010), and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: [SPI]Engineering Sciences [physics], Engineering, Decimation, Finite impulse response, CMOS, Intermediate frequency, business.industry, Electronic engineering, Baseband, Wireless, Demodulation, business, Communication channel
Abstract: International audience; This paper presents the architecture, the implementation details and the measurement results of an IF to DC subsampler for 60 GHz applications. The proposed subsampler performs downconversion, IQ demodulation and out-of-band filtering within a unique operation. An 802.11ad (WiGig) channel at a fixed 21.12 GHz IF frequency is subsampled using a 7.04 GHz clock. The 1.76 GS/s analog to digital conversion is directly performed in baseband after FIR filtering and decimation. The charge domain subsampler and FIR filter provide additional immunity to perturbations at no extra hardware cost. Digitally controlled delay lines set the phase of the sampling clock to reach the best sampling instant. In conclusion, subsampling-based back-ends can be promising candidates for low power, low cost and digitally synchonized receiver architectures.
Published: 2014
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40. Hierarchical sizing and biasing of analog firm intellectual properties

Author: Marie-Minerve Louërat, Ramy Iskander, Andreas Kaiser, Circuits Intégrés Numériques et Analogiques (CIAN), Laboratoire d'Informatique de Paris 6 (LIP6), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)
Subjects: Engineering, Offset (computer science), business.industry, 020208 electrical & electronic engineering, Transistor, 020206 networking & telecommunications, Biasing, 02 engineering and technology, Reuse, Sizing, law.invention, [SPI]Engineering Sciences [physics], CMOS, Hardware and Architecture, law, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Netlist, Operational amplifier, [INFO]Computer Science [cs], Electrical and Electronic Engineering, business, Software, ComputingMilieux_MISCELLANEOUS
Abstract: A hierarchical sizing and biasing methodology for analog firm intellectual properties (IPs) is presented. An analog firm IP designates an unsized transistor netlist of an analog circuit. The methodology sizes and biases an analog firm IP by automatically generating suitable sizing procedures. The generated procedures respect topology constraints, designer's hypotheses and design constraints. The procedures are represented using dependency graphs. The methodology deals with different aspects of analog design problems such as MOS inversion level control, insufficient or excess design parameters, systematic offset and negative-feedback. Its application in both fields of analog synthesis and simulation is outlined. The proposed methodology has been successfully used to size, bias and analyze two analog IPs: a single-ended two-stage operational amplifier and a fully differential transconductor. This is performed using 130nm CMOS technology with V"D"D=1.2V. The results prove the effectiveness and precision of the proposed methodology.
Published: 2013
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41. Oxidation-assisted graphene heteroepitaxy on copper foil

Author: Xiaohui Tang, Jean-François Colomer, Luc Lajaunie, Emmanuel Dubois, Luc Henrard, Frédéric Joucken, Nicolas Reckinger, Benoît Hackens, Raul Arenal, University of Namur, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université Catholique de Louvain = Catholic University of Louvain (UCL), University of Zaragoza - Universidad de Zaragoza [Zaragoza], Laboratorio de Microscopías Avanzadas, LMA, Instituto de Nanociencia de Aragón, INA, Universidad de Zaragoza, ARAID Foundation, Zaragoza, 50018, Spain, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), European UnionEuropean Commission [604391, 312483-ESTEEM2], EU H2020 ETN project 'Enabling Excellence' Grant [642742], Spanish Ministerio de Economia y Competitividad [FIS2013-46159-C3-3-P], Multi-Sensor-Platform for Smart Building Management project [611887], Actions de Recherche Concertees (ARC), Renatech Network, and Microélectronique Silicium - IEMN (MICROE SI - IEMN)
Subjects: Materials science, Nucleation, chemistry.chemical_element, FOS: Physical sciences, 02 engineering and technology, Chemical vapor deposition, Abnormal grain growth, 010402 general chemistry, Epitaxy, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], law, General Materials Science, Condensed Matter - Materials Science, Graphene, Recrystallization (metallurgy), Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, Copper, 3. Good health, 0104 chemical sciences, chemistry, Chemical engineering, Grain boundary, 0210 nano-technology
Abstract: We propose an innovative, easy-to-implement approach to synthesize large-area singlecrystalline graphene sheets by chemical vapor deposition on copper foil. This method doubly takes advantage of residual oxygen present in the gas phase. First, by slightly oxidizing the copper surface, we induce grain boundary pinning in copper and, in consequence, the freezing of the thermal recrystallization process. Subsequent reduction of copper under hydrogen suddenly unlocks the delayed reconstruction, favoring the growth of centimeter-sized copper (111) grains through the mechanism of abnormal grain growth. Second, the oxidation of the copper surface also drastically reduces the nucleation density of graphene. This oxidation/reduction sequence leads to the synthesis of aligned millimeter-sized monolayer graphene domains in epitaxial registry with copper (111). The as-grown graphene flakes are demonstrated to be both single-crystalline and of high quality., Comment: Main text (18 pages, 6 figures) + supplementary information (26 pages, 15 figures)
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