168 results on '"Manchanda, L."'
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2. Multi-component high- K gate dielectrics for the silicon industry
3. The nature of intrinsic hole traps in thermal silicon dioxide.
4. Kinetic smoothening: Growth thickness dependence of the interface width of the Si(001)/SiO2 interface.
5. High K gate dielectrics for the silicon industry.
6. Si-doped aluminates for high temperature metal-gate CMOS: Zr-Al-Si-O, a novel gate dielectric for low power applications.
7. The impact of nitrogen profile engineering on ultrathin nitrided oxide films for dual-gate CMOS ULSI.
8. A boron-retarding and high interface quality thin gate dielectric for deep-submicron devices.
9. Impact of boron diffusion through O/sub 2/ and N/sub 2/O gate dielectrics on the process margin of dual-poly low power CMOS.
10. Hot-Electron Trapping and Generic Reliability of p + Polysilicon/SiO2/Si Structures for Fine-Line CMOS Technology.
11. The Effect of TaSi2/n+ Poly Gate on Hot-Electron Instability of Small Channel MOSFETs.
12. Fluorine effect on boron diffusion of p/sup +/ gate devices (MOSFETs).
13. Gate quality doped high K films for CMOS beyond 100 nm: 3-10 nm Al/sub 2/O/sub 3/ with low leakage and low interface states.
14. Crystallization kinetics in amorphous (Zr0.62Al0.38)O1.8 thin films.
15. Etching of high-k dielectric Zr1-xAlxOy films in chlorine-containing plasmas.
16. Characterisation of Hβ spectra from EXO 051910+3737.7 X-rays binaries.
17. Dielectric breakdown of oxide films in electronic devices.
18. Thickness dependence of boron penetration through O/sub 2/- and N/sub 2/O-grown gate oxides and its impact on threshold voltage variation.
19. A high-performance directly insertable self-aligned ultra-rad-hard and enhanced isolation field-oxide technology for gigahertz silicon NMOS/CMOS VLSI.
20. Hole traps in thermal silicon dioxide introduced by chlorine.
21. Inversion layer mobility of MOSFET's fabricated with NMOS Submicrometer technology.
22. Gate capacitance attenuation in MOS devices with thin gate dielectrics.
23. Composition-dependent crystallization of alternative gate dielectrics.
24. Study of thermally oxidized yttrium films on silicon.
25. Growth temperature dependence of the Si(001)/SiO[sub 2] interface width.
26. Anomalous C-V characteristics of implanted poly MOS structure in n/sup +//p/sup +/ dual-gate CMOS technology.
27. A high-performance directly insertable self-aligned ultra-radiation-hard and enhanced isolation field-oxide technology for gigahertz Si-CMOS VLSI.
28. Yttrium oxide/silicon dioxide: a new dielectric structure for VLSI/ULSI circuits.
29. γ—Radiation effects on MOSFET's fabricated with NMOS Submicrometer technology.
30. Lysine-based non-cytotoxic ultrashort self-assembling peptides with antimicrobial activity.
31. A Van der Waals plug‐and‐probe approach.
32. A robust, 1.8 V 250 /spl mu/W direct-contact 500 dpi fingerprint sensor.
33. Temperature and channel-length dependence of impact ionization in p-channel MOSFETs.
34. Theoretical study of CHYMO32 peptide obtained by in silico fragmentation of the escapin protein isolated from marine hare Aplysia californica: A prediction for antimicrobial activity.
35. Gate current in 0.75μm N-channel MOSFETs with doubly diffused drain.
36. Establishment of an In Bacterio Assay for the Assessment of Carbon Storage Regulator A (CsrA) Inhibitors.
37. Scalable and Chromatography‐Free Synthesis of Efflux Pump Inhibitor Phenylalanine Arginine β‐Naphthylamide for Its Validation in Wild‐Type Bacterial Strains.
38. A Review of Fingerprint Sensors: Mechanism, Characteristics, and Applications.
39. Antimicrobial Conjugated Oligoelectrolytes Containing Triphenylphosphonium Solubilizing Groups.
40. Photon-driven bactericidal performance of surface-modified TiO2 nanofibers.
41. Ru(II) Complexes with Enaminone Structures for Rapid Sterilization of Staphylococcus aureus and MRSA with Little Accumulation of Drug Resistance.
42. Amyloid inhibition by molecular chaperones in vitro can be translated to Alzheimer's pathology in vivo.
43. Multifaceted Target Specificity Analysis as a Tool in Antimicrobial Drug Development: Type III Pantothenate Kinases as a Case Study.
44. Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors.
45. Clearing an ESKAPE Pathogen in a Model Organism; A Polypyridyl Ruthenium(II) Complex Theranostic that Treats a Resistant Acinetobacter baumannii Infection in Galleria mellonella.
46. Observation of MOSFET-like behavior of a TFT based on amorphous oxide semiconductor channel layer with suitable integration of atomic layered deposited high-k gate dielectrics.
47. Synthesis, molecular docking, ADME study, and antimicrobial potency of piperazine based cinnamic acid bearing coumarin moieties as a DNA gyrase inhibitor.
48. Diagnostic Techniques for Electrical Discharge Plasma Used in PVD Coating Processes.
49. BaY16Si4O33 containing Ba(SiO4)4 orthosilicates.
50. A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices
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