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This paper reports experimental observations showing that a current flow produces an effect of strengthening a solder joint against a shear load. This conclusion is found from a single-joint shear test conducted on Sn–1Ag–0.5Cu wt% (SAC 105) joints with in situ current stressing varied from 700 to 1400 A/cm2 at room temperature. To isolate the current effect from the Joule heat effect, the same type of tests were conducted at room temperature, 40, 50, and 80 °C, without current applied to the joint, thus mimicking the condition of steady-state temperature resulting from Joule heating. Comparative testing was also conducted after aging the samples at 150 °C for 200 h. These tests produced indications suggesting that the current flow causes the maximum shear load to increase, while the rise in temperature by the Joule heat effect results in the opposite effect. Experimentally, as much as a 9.5% increase in the maximum shear load was observed from the isothermally aged sample tested under a current density of 700 A/cm2, while an ~ 25% reduction was estimated to result from a temperature increase by Joule heating. The potential mechanism for these observations is discussed.

In this paper, a combination of in-situ chemical synthesis and electrolysis methods was applied for the preparation of zinc oxide/graphene oxide quasi core-shell nanoparticles. Pure zinc oxide was also prepared using the same method at different temperatures. 100 °C was selected for synthesizing the ZnO/GO quasi core-shell (zinc oxide as a core and few layers of graphene oxide as a shell). The particle size was 15 ± 2 nm in all samples. In both processes, oxygen was the main reason for the connection between the core and the shell. XRD patterns also confirmed the formation of ZnO (with regular wurtzite structure) and ZnO/GO quasi core-shell structures. Raman spectroscopy results confirmed ZnO formation at various temperatures, but little shift was observed for ZnO/GO quasi core-shell after conjugating. HRTEM, BET, PL and UV-Vis were able to define and confirm the formation of the quasi core-shell structure and the mechanism of connection at the interface. Photoluminescence spectroscopy showed a few numbers of PL peaks that were not related to the presence of graphene. These sub-peaks depend on the kind of synthesis and creation of defects (based on defects chemistry). The results indicated that graphene just changed the intensity of the PL peaks. Our data indicated that the rate of MB degradation for ZnO/GO quasi core-shell structures was less than that of the pure zinc oxide. After conjugating between ZnO and GO, two mechanisms are suggested. The first is the band structure modification in the boundary of the core and shell. The second is the diffusion of carbon atoms or functions as dopant in ZnO surface. This report addresses how band structure modification, defect chemistry; microstructural features can affect the photocatalytic and photoluminescence behavior in a specific core-shell structure.

ZnO/graphene oxide core-shell nanoparticles (ZGNPs) were prepared by via in-situ chemical synthesis and electrolysis. This report addresses the disagreement in the photocatalytic and photoluminescence behavior in this system. XRD, Raman, HRTEM, PL and UV–Vis were able to confirm ZnO nanoparticles and core-shell structures formation at various temperatures. A little shift was observed in Raman for ZGNPs after conjugating. PL showed a few peaks that were not related to the graphene, which depends on the synthesis route and defects. After conjugating between ZnO and Graphene, two mechanisms are suggested. The first is band structure modification in the boundary of core and shell. The second one is diffusion of functional group in GO as a dopant on ZnO surface.

This paper reports the mechanism of the power conversion efficiency (PCE) improvement in the ZnO nanowires (NW) based solar cells by using CdS/CdSe nanocomposite sensitizers instead of a single CdS quantum-dot (QD) sensitization layer. Two cells with the different type of the sensitization layers were essentially consists of the high-density ZnO nanowire (NW) and a sensitization layer of either CdS-QD or CdS/CdSe nanocomposite, which were produced by an in-situ sequential assembly process of both ionic layer absorption and reaction (SILAR) and chemical bath deposition (CBD). Measurement on the PCE revealed that the cell with CdS/CdSe nanocomposite showed a three-fold increase in PCE compared to the one with a CdS-QD layer. While such improvement in PCE appeared to be consistent with the step-wise band alignment mechanism suggested for the type-II heterojunction of CdSe/CdS/ZnO structures, our microstructural analysis of the cell structure yielded results strongly indicating that the reduction of both interface defects and misfit strain in the CdS lattices plays an additional role on the PCE improvement. Analyses on the interface and the CdS crystallinity using high-resolution electron microscopy (HRTEM) combined with the geometric phase analysis (GPA) revealed that the addition of CdSe effectively reduced the lattice strain in the CdS without introducing misfit dislocations at CdS/CdSe interface, probably owing to Se anion diffusion (or exchange) to the defective SILAR CdS layer during the CBD process. Although an entire enhancement in PCE by the addition of CdSe layer seen in our study cannot be attributed solely to the interface defect/strain reduction, our observations suggest that control of misfit dislocation and lattice nano-strain is equally significant to the step-wise band alignment in affecting the performance of the heterojunction solar cell.

The mechanical stability of Sn-Ag-Cu interconnects with low and high silver content against mechanical shock at room and elevated temperatures was investigated. With a heating element-embedded printed circuit board design, a test temperature from room temperature to 80°C was established. High impact shock tests were applied to isothermally pre-conditioned ball-grid array interconnects. Under cyclic shock testing, degradation and improved shock performances were identified associated with test temperature variation and non-solder mask defined and solder-mask defined pad design configuration differences. Different crack propagation paths were observed, induced by the effect of the elevated temperature test conditions and isothermal aging pre-conditions.

This article summarizes the mechanics of two mechanical fatigue methods, cyclic bending fatigue and shear fatigue, in inducing failure in solder joints in package assemblies, and it presents the characteristics of fatigue failures resulting from these methods using example cases of Sn-Pb eutectic and Sn-rich Pb-free solder alloys. Numerical simulation suggests that both testing configurations induce fatigue failure by the crack-opening mode. In the case of bending fatigue, the strain induced by the bending displacement is found to be sensitive to chip geometry, and it induces fatigue cracks mainly at the solder matrix adjacent to the printed circuit board interface. In case of shear fatigue, the failure location is firmly fixed at the solder neck, created by solder mask, where an abrupt change in the solder geometry occurs. Both methods conclude that the Coffin–Manson model is the most appropriate model for the isothermal mechanical fatigue of solder alloys. An analysis of fatigue characteristics using the frame of the Coffin–Manson model produces several insightful results, such as the reason why Pb-free alloys show higher fatigue resistance than Sn-Pb alloys even if they are generally more brittle. Our analysis suggests that it is related to higher work hardening. All these results indicate that mechanical fatigue can be an extremely useful method for fast screening of defective package structures and also in gaining a better understanding of fatigue failure mechanism and prediction of reliability in solder joints.

The improved control of lattice strain in the quantum-dot (QD) region of p – i – n structures using a modified epitaxial growth procedure has been observed and analyzed. Strain in the QD region was managed by (a) inserting a correction layer (CL) with a lattice constant that was intermediate between the lattice constant of the QD region and the lattice constant of the underlying substrate, (b) capping the QD islands with a layer that had the same lattice constant as the CL, and (c) the utilization of only three atomic elements in the growth of the QD intrinsic region. These results were demonstrated in In x Ga 1− x As/InAs/In x Ga 1− x As p–i–n devices with five InAs QD layers and then compared with In x Ga 1− x As p–n (HOM) devices with identical ternary alloy compositions and no quantum dot layers. The layers in all of the devices were grown by molecular beam epitaxy. X-ray diffraction (XRD) measurements showed the interface dislocations in the QD samples were fewer than in the HOM samples and were isolated at the In x Ga 1− x As–GaAs interface, away from the optically active QD region. Cross-sectional, high-resolution transmission electron microscopy (HRTEM) images showed no evidence of threading dislocations in the QD region. Post-growth calculations of the average lattice constant of the QD region, using atomic force microscopy, XRD, and HRTEM data, indicated the QD region experienced a ∼3× reduction in its lattice misfit while increasing its critical thickness by more than 3×. Although the total misfit in the QD samples increased with the insertion of the CL and the average lattice constant of the QD region was not matched to the CL, the strain energy nevertheless was absorbed successfully without creating deleterious dislocations as seen in QD devices exhibiting lower dark current densities than in HOM control devices.

This paper examines the mechanics of ball shear testing with the objective of understanding the mechanism by which the maximum shear force and the rate of crack growth is dependent on the solder bump size. For this, Pb-Sn solder bumps with diameters between 460 lm and 760 lm are soldered to 400 lm-diameter Cu pads and subjected to ball shear testing. In spite of the constant interface area, the bump size significantly impacts the measured shear fracture force and the crack growth rate. Both the fracture force and the crack growth rate increase with bump size, and in the case of the fracture force, the increase is almost linear. Our analysis finds that the linear increase in the fracture force is a result of the bump deformation force, which increases with bump size. A simple model that accounts for the deformation force component is developed and used to extract the true interface fracture force. The estimated true interface fracture force is found to vary little with bump size, tightly converging to the 40 MPa to 48 MPa range. On the other hand, the dependence of crack growth rate on bump size is found to result from the higher degree of rotational moment associated with larger bumps.

This paper is concerned with the mechanics of interfacial fracture that are active in two common testing configurations of solder joint reliability. Utilizing eutectic Pb-Sn/Cu as a reference system and assuming the presence of a predefined crack size in the intermetallic compound (IMC) layer, stress intensity factors (K I and K II) at the crack are numerically calculated for the two given configurations. The analysis of the tensile test configuration reveals that the fracture occurs by the crack-opening mode (K I mode), as anticipated, but that it is greatly assisted by the viscoplasticity of the solder. With nonuniform viscoplastic deformation across the joint, K I is found to increase much more rapidly than it would without the solder, decreasing the critical crack size to the micron scale. The same mechanism is also responsible for the development of a K II comparable to K I at the crack tip, that is, |K I /K II| ~ 1. It is also found that the predominant fracture mode in the bump shear configuration is crack opening, not crack shearing. This is an unexpected result, but numerical analyses as well as experimental observations provide consistent indications that fracture occurs by crack opening. During shear testing, bump rotation due to nonzero rotational moment in the test configuration is found to be responsible for the change in the fracture mode because the rotation makes K I become dominant over K II. With rotational moment being affected by the geometry of the bump, it is further found that the fracture behavior may vary with bump size or shape.

We demonstrate a large-scale placement of nanoparticles through a scheme named "electrostatic funneling", in which charged nanoparticles are guided by an electrostatic potential energy gradient and placed on targeted locations with nanoscale precision. The guiding electrostatic structures are defined using current CMOS fabrication technology. The effectiveness of this scheme is demonstrated for a variety of geometries including one-dimensional and zero-dimensional patterns as well as three-dimensional step structures. Placement precision of 6 nm has been demonstrated using a one-dimensional guiding structure comprising alternatively charged lines with line width of approximately 100 nm. Detailed calculations using DLVO theory agree well with the observed long-range interactions and also estimate lateral forces as strong as (1-3) x 10(-7) dyn, which well explains the observed guided placement of Au nanoparticles.

This paper is a study of the phase equilibria of the Sn-3.8Ag-0.7Cu alloy investigated by a differential cooling method. The difficulty in assessing phase equilibria of the Sn-Ag-Cu (SAC) system because of the insufficient resolution of conventional characterization techniques is solved by inducing preferential growth of a solid phase in a melt by holding the alloy at the solid-liquid phase-equilibrium field. Application of the technique to Sn-3.8Ag-0.7Cu with varying holding temperatures yielded results that the alloy is slightly off eutectic composition. The phase-formation sequence of the alloy during solidification was found to be Ag3Sn, β-Sn, and finally the ternary eutectic microstructure.

We report findings related to the HgTe nanodots fabricated from the precipitation phenomenon in the HgTe-PbTe quasi-binary system. With homogeneous nucleation and growth of HgTe phase, a well defined nanostructure is obtained, where the nanodots are three-dimensionally dispersed within the PbTe matrix. The nanodots prefer to take disk shape to relax a strong strain energy that resulted from the formation of disordered HgTe phase. With this facile and effective technique, the nanodots with various morphologies can be realized within any form of matrix, such as powder, bulk, or thin film, providing a new way to tailor the properties of the nanodots.

This paper presents a study of electron scattering in damascene-processed Cu interconnects. To understand the leading electron-scattering mechanism responsible for the size effect, Cu interconnects with varying physical widths, 80–750 nm, were made, and their resistivity characterized as a function of temperature, ranging from liquid He temperature (4.2 K) to 500 K. The resulting data suggest that surface scattering, contrary to expectations, was not the primary cause of the size effect observed in this investigation. Surface scattering was found to weaken with decreasing line width. Further analysis leads to the conclusion that a substantial fraction of the size effect originates from impurity content scaling inversely with width in these samples.

This paper presents experimental evidence suggesting that electromigration (EM) can be a serious reliability threat when the dimension of Cu interconnects approaches the nanoscale range. To understand the failure mechanism prevailing in nanoscale Cu interconnects, single-level, 400-µm long interconnects with various effective widths, ranging from 750 nm to 80 nm, were made, EM tested, and characterized in this investigation. The results indicate that interface EM (Cu/barrier) may be the predominant EM mechanism in all line widths. The evidence supporting the active Cu/barrier interface EM includes the fact that the EM lifetime is inversely proportional to the interface area fraction. Microscopic analysis of the failure sites also supports the conclusion of interface EM because voids and hillocks are found at the ends of the test strip, which is not possible if lines fail by grain-boundary EM in the test structure used in this study. In addition, our study finds evidence that failure is assisted by a secondary mechanism. The influence of this factor is particularly significant when the feature size is small, resulting in more uniform distribution of failure time in narrower lines. Although limited, evidence suggests that the secondary factor is probably attributed to pre-existing defects or grain boundaries.

This report studies the electromigration performance of W-plug via structures under the reservoir effect. The lifetime improvement factor M was observed to be a weak function of the stressing current and approximately equal to 2. A Simple model is included in the report to explain this observation. The model also predicts the most effective reservoir length for electromigration lifetime improvement.

Electromigration in Cu thin films is studied in a cross-strip configuration. Cu lines with isolated areas of Cu(Al) or Cu(Sn) are tested between 250 and 390 °C with the following results. The hillock and void marker motion indicates that Sn moves in the direction of electron flow. The marker polarity indicates that it decreases the grain boundary electromigration of Cu, in agreement with previous studies. This study also finds evidence of active surface migration in Cu. During tests in forming gas, hillocks and voids form adjacent to a native Al2O3 layer at all temperatures, indicating the likelihood that Cu migrates faster through the Cu free surface than the interface between the surface layer of Al2O3 and Cu(Al). Active surface migration in Cu thin films is also evidenced by the growth of hillocks with highly developed facets, most of which are attached to the underlying film by narrow necks.

This article introduces a simple and effective technique for conducting electromigration testing of a number of samples using a single current source. It is based on a configuration where all samples are serially connected to a single current source, allowing them to be subjected to identical current conditions. In this design, each sample has a current bypass circuit, consisting essentially of a computer controlled shunt relay and a Zener diode, to enable continuation of testing without any interruption in the test current when samples fail. With this technique, a large number of samples can be tested with the same current and excellent current stability, making it suitable for both reliability assessment and scientific investigation of electromigration mechanisms. Initial results show high correlation with industry standard testing systems.

This paper reports the formation of intermetallic compounds in Au/Ni/Cu/Ti under-bump-metallization (UBM) structure reacted with Ag-Sn eutectic solder. In this study, UBM is prepared by evaporating Au(500 A)/Ni(1000 A)/Cu(7500 A) /Ti (700 A) thin films on top of Si substrates. It is then reacted with Ag-Sn eutectic solder at 260 C for various times to induce different stages of the interfacial reaction. Microstructural examination of the interface, using both chemical and crystallographic analysis, indicates that two types of intermetallic compounds are formed during the interfacial reaction. The first phase, formed at the intial stage of the reaction, is predominantly Ni3Sn4. At longer times the Ni3Sn4 phase transforms into (Cu, Ni)6Sn6, probably induced by interdiffusion of Cu and Ni. At this stage, the underlying Cu layer also reacts with Sn and forms the same phase, (Cu,Ni)6Sn5. As a result, the fully reacted interface is found to consist of two intermetallic layers with the same phase but different morphologies.

The possibility is addressed of improving the electromigration resistance of Al and Al–Cu thin‐film conductors with ‘‘quasi‐bamboo’’ structures by post‐pattern anneals that decrease the maximum polygranular segment length. Pure Al, Al–2Cu, and Al–2Cu–1Si lines were patterned and annealed at temperatures high enough to stimulate grain growth. Appropriate anneals led to predominantly bamboo structures with short polygranular segments. These grain structures had a high median time to failure with a relatively low deviation of the time to failure. Metallographic analyses showed that polygranular segment length was a dominant factor in determining the failure site. Post‐pattern annealing promotes a preferential shortening of the relatively long polygranular segments that cause early failures. However, even after annealing, failure occurred at the longest residual polygranular segments, even when these were significantly shorter than the ‘‘Blech length’’ under the test conditions. Statistical analysis of the failure of alloy lines revealed a simple exponential relation between the failure time and the longest polygranular segment length within a line, which is functionally identical to that previously found for lines tested in the as‐patterned condition.

The work reported here concerns the effect of a brief exposure to a reversed current on the electromigration failure of narrow Al-Cu thin-film conducting lines. While the precise mechanism by which Cu retards electromigration in AlCu alloys is not fully understood, the consistent observation that electromigration failure is preceded by the sweeping of Cu from the failure site can be used to improve electromigration resistance by stabilizing the distribution of Cu. One way of doing this is to expose the Al-Cu line to a reverse current for some period of time. The present work shows that this method is particularly effective in thin lines with “quasi-bamboo” microstructures. It has the effect of building a reservoir of Cu at the upstream ends of the polygranular segments that are the preferred failure sites, and significantly increases both the mean time to failure, and the time to first failure of a distribution of lines. It can be inferred from these results that Al-Cu lines that conduct alternating current should be exceptionally resistant to electromigration failure.

This letter presents evidence of an oxidation-driven failure mechanism in Cu interconnects integrated with ultralow-κ materials. It is found that the open pore structure of ultralow-κ materials allows oxidants in the ambient to reach the interconnect structure and induce oxidation of Cu. In contrast to a normal oxidation process where Cu is in contact with the oxidant, oxidation is controlled by the outdiffusion of Cu through the barrier layers, Ta and SiCN, to form Cu oxide in the pores of the dielectric material. The loss of Cu by outdiffusion induces extensive voiding and subsequent failure in Cu interconnects.

The rate of resistivity decay in Al‐2Cu‐1Si thin‐film conductors was studied as a function of temperature and grain size distribution. The decay kinetics were assumed to be governed by the rate of precipitate reconfiguration to grain boundaries. This assumption was confirmed by transmission electron microscopy (TEM) observations of the microstructure during resistance decay, and by studies of lines of two different widths. The results can be explained qualitatively from the microstructure of the lines. In particular, increasing the mean grain size slows the rate of resistivity decay, and establishing a bimodal distribution with a significant population of relatively large grains has the same effect. A simple model was developed to treat these effects quantitatively. The model assumes a cylindrical grain geometry and a uniform initial distribution of Cu and ignores the effect of intragranular precipitation. The model yields reasonable values for the activation energy for Cu diffusion in thin films, and pre...

This work is principally concerned with the microstructure of electromigration failure in narrow Al‐2Cu‐1Si conducting lines on Si. Samples were patterned from 0.5‐μm‐thick vapor‐deposited films with mean grain size of 2.4 μm, and had linewidths of 1.3 μm (W/G≊0.5), 2 μm (W/G≊0.8), and 6 μm (W/G≊2.5). The lines were tested to failure at T=226 °C and j=2.5×106 A/cm2. Other samples were tested over a range of substrate temperatures and current densities to test the effect of these variables, and 1.3 μm lines were tested after preaging at 226 °C for various times to change the Cu‐precipitate distribution prior to testing. Three failure modes were observed: The 6 μm specimens failed by separation along grain boundaries with an apparent activation energy of 0.65 eV; the 1.3 μm specimens that were preaged for 24 h failed after very long times by gradual thinning to rupture; all other narrow lines failed by the transgranular‐slit mechanism with an activation energy near 0.93 eV. Microstructural studies suggest that the transgranular‐slit failure mechanism is due to the accumulation of a supersaturation of vacancies in the bamboo grains that terminate polygranular segments in the line. Failure occurs after Cu has been swept from the grain that fails. Failure happens first at the end of the longest polygranular segment of the line, at a time that decreases exponentially with the polygranular segment length. Preaging the line to create a more stable distribution of Cu lengthens the time required to sweep Cu from the longest polygranular segment, and significantly increases the time to failure. In the optimal case the transgranular‐slit failure mechanism is suppressed, and the bamboo grain fails by diffuse thinning to rupture. Preaging is particularly effective in increasing the lifetimes of lines that contain very long polygranular segments, and has the consequence that the time to first failure in an array of lines is much longer than predicted by a log‐normal fit to the distribution of failure times.

This paper reports a study of the effect of Cu precipitation on electromigration failure in Al‐2Cu‐1Si thin‐film conducting lines. The films were 0.5 μm in thickness, and patterned to widths of 1.3 and 4 μm, providing width‐to‐grain‐size ratios (W/G) of approximately 0.5 and 2. The lines were aged for various times at 226 °C, and were then tested to failure at a current density of 2.5×106 A/cm2. Scanning and transmission electron microscopy were used to study the Cu precipitate distribution, its evolution during aging and electromigration, and the microstructural failure mechanism. Aging produces a dense distribution of intragranular θ’ (Al2Cu; coherent), with stable θ (Al2Cu; incoherent) in the grain boundaries. The θ’ is replaced by θ as aging proceeds. In the wide lines (W/G≊2), the mean time to failure (MTF) increases slowly and monotonically with prior aging time. The failure happens through the growth and coalescence of intergranular voids. In the narrow lines (W/G≊0.5), both the MTF and the time to...

This letter reports experimental observations evidencing the viscoplasticity of porous organosilicate glass thin films under conditions pertinent to their application in advanced low-k/Cu interconnect technology. Specifically, it is found that porous SiCOH thin films exhibit a significant level of viscoplasticity with a rate sensitive to the porosity, the degree of plasma damage, and hydration reaction when tested using a ball indenter at 150–400 °C. The activation energy of the viscosity (1.25–1.45 eV) is measured to be far lower than the bulk glass (>4 eV), suggesting that the viscous flow is affected by the presence of defective bond-network such as Si–OH or Si–H bonds.

This letter reports the observation of the space charge limited current (SCLC) induced by injection and drift of Cu ions into porous low-k dielectrics. The SCLC, characterized by the momentary rise and fall of current with time, is found in all Cu interconnects having defective Ta barrier while it is absent in interconnects with intact barrier. This observation, combined with existing model on SCLC, leads to the conclusion that Cu ions can be injected through defects in Ta barrier and drift under electric field with the mobility as high as an order of 10−13 cm2/sec V at room temperature.

This letter presents a step-mode voltammetry method which uses ion diffusivity to characterize pore structure in both dense and porous low dielectric constant materials (low k) in patterned interconnect structures. Findings reveal that the intramolecular space in dense low k acts like a small physical pore network. It is determined that electrolyte ions can migrate through such space in dense low k, but with higher activation energy than in porous low k or the bulk solution, 0.31eV vs 0.18–0.19eV. Also, this study finds that the pores in ultralow k are not stable but can either coalesce or collapse depending on stress conditions.

The pyroelectricity and crystallization level of yttrium barium copper oxide (YBa2Cu3O6+x) thin films have been investigated by depositing the thin films by rf magnetron sputtering at different substrate temperatures. A portion of the thin film samples were analyzed by x-ray diffraction (XRD) to investigate the crystallinity while the remainder were processed to fabricate capacitor structures with Au electrodes to study the pyroelectric properties of the thin films. We observed different crystallization levels for samples that were deposited at different substrate temperatures. Pyroelectric behavior was observed to be correlated to the strength of the XRD peaks observed. Samples that lack crystallinity did not display pyroelectric behavior, while samples with observable crystallinity displayed pyroelectric behavior, either as deposited without poling or induced by poling. Samples lacking crystallinity could not be poled to display a measurable pyroelectric behavior. Pyroelectric coefficients on the order of 50 nC/K cm2 were observed in the polycrystalline samples.