Back to Search Start Over

Mechanism of reliability failure in Cu interconnects with ultralow-κ materials

Authors :
P. Gillespie
R. A. Augur
Choong-Un Kim
N. L. Michael
Source :
Applied Physics Letters. 83:1959-1961
Publication Year :
2003
Publisher :
AIP Publishing, 2003.

Abstract

This letter presents evidence of an oxidation-driven failure mechanism in Cu interconnects integrated with ultralow-κ materials. It is found that the open pore structure of ultralow-κ materials allows oxidants in the ambient to reach the interconnect structure and induce oxidation of Cu. In contrast to a normal oxidation process where Cu is in contact with the oxidant, oxidation is controlled by the outdiffusion of Cu through the barrier layers, Ta and SiCN, to form Cu oxide in the pores of the dielectric material. The loss of Cu by outdiffusion induces extensive voiding and subsequent failure in Cu interconnects.

Details

ISSN :
10773118 and 00036951
Volume :
83
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........386b94780bb4feca7b7bfe2e85ed3c61
Full Text :
https://doi.org/10.1063/1.1609242