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In the study described herein, CrTaWNx thin films were deposited on Si and 304 stainless-steel (SUS304) substrates through magnetron co-sputtering using CrW and Ta targets. The nitrogen flow ratio (fN2 = [N2/(N2 + Ar)]) was adjusted to 0.05, 0.2, 0.4, and 0.5 to fabricate CrTaWNx films with various N contents. The CrTaWNx films prepared at a low fN2 of 0.05 exhibited a low stoichiometric ratio x of 0.16 and a nanocrystalline structure. In contrast, the CrTaWNx films fabricated at an fN2 of 0.2–0.5 exhibited x values of 0.42–0.62 and formed a face-centered cubic phase. The nanocrystalline (Cr0.34Ta0.20W0.46)N0.16 film exhibited mechanical properties and wear resistances that were inferior to those of the crystalline CrTaWNx thin films. A (Cr0.38Ta0.15W0.47)N0.55 film exhibited a hardness of 25.2 GPa, an elastic modulus of 289 GPa, and a low wear rate of 0.51 × 10−5 mm3/Nm. [ABSTRACT FROM AUTHOR]

A co-sputtering process for the deposition of Fe0.8Ga0.2B alloy magnetostrictive thin films is studied in this paper. The soft magnetic performance of Fe0.8Ga0.2B thin films is modulated by the direct-current (DC) sputtering power of an FeGa target and the radio-frequency (RF) sputtering power of a B target. Characterization results show that the prepared Fe0.8Ga0.2B films are amorphous with uniform thickness and low coercivity. With increasing FeGa DC sputtering power, coercivity raises, resulting from the enhancement of magnetism and grain growth. On the other hand, when the RF sputtering power of the B target increases, the coercivity decreases first and then increases because of the conversion of the films from a crystalline to an amorphous state. The lowest coercivity of 7.51 Oe is finally obtained with the sputtering power of 20 W for the FeGa target and 60 W for the B target. Potentially, this optimization provides a simple way for improving the magnetoelectric coefficient of magnetoelectric composite materials and the sensitivity of magnetoelectric sensors. [ABSTRACT FROM AUTHOR]

CrWSiN films were prepared through the co-sputtering technique, and the process variables were substrate bias voltage and temperature. The mechanical properties of hardness and elastic modulus of the CrWSiN films were dominantly affected by their average crystallite size and by substrate bias voltage and temperature. Moreover, the effect of substrate temperature was more evident than that of substrate bias. The highest hardness and elastic modulus of 42.6 and 459 GPa, respectively, were obtained for the Cr20W28Si9N43 film fabricated at a substrate temperature of 400 °C, which exhibits an evident advantage over the 25.0 and 323 GPa values for the Cr21W28Si9N42 film fabricated at room temperature. In contrast, an increase in negative bias voltage to −100 V on the substrate decreased the mechanical properties compared to one prepared using a similar process without applying the negative bias voltage. The oxidation resistance of the Cr-enriched Cr37W4Si10N49 and Cr37W5Si10N48 films was superior to that of the Cr20W28Si9N43 films with near-equal Cr and W contents annealed at 900 °C in air. The formation of a surficial Cr2O3 layer plays a vital role in restricting subsequent oxidation for CrWSiN films. [ABSTRACT FROM AUTHOR]

We fabricated aluminum-doped tantalum-oxide (Ta2O5:Al) thin films using a simple co-sputtering method and observed broad near-infrared (NIR) light emission with wavelengths around 700 to 1000 nm from a sample annealed at 900 °C without rare-earth elements. The NIR light emission is thought to be due to the superposition of three emission peaks around wavelengths of 800, 870, and 950 nm, and X-ray diffraction analyses revealed that the origin of the NIR light emission is related to AlTaO4 present in the Ta2O5:Al thin film.

(TiZrNbTa)Nx films were fabricated at various nitrogen flow ratios (RN2) through reactive direct current magnetron co-sputtering. The structural, mechanical, and anticorrosive properties of the (TiZrNbTa)Nx films were explored. The metallic TiZrNbTa film formed a body-centered cubic phase, and the film (N05) deposited at RN2 = 5% exhibited a nanocrystalline structure consisting of close-packed hexagonal and face-centered cubic (FCC) phases. In contrast, the films prepared at RN2 > 10% demonstrated an FCC phase. The N05 film has hardness and elastic modulus of 23.5 and 220 GPa, respectively, the highest hardness and relatively lower elastic modules among the studied nitride films. Moreover, the N05 film has the highest polarization resistance of 198 kΩ·cm2 measured by the potentiodynamic polarization method. The chemical states of the (TiZrNbTa)Nx films were examined by X-ray photoelectron spectroscopy.

Thin films of transition metal oxides and oxynitrides have proven highly effective in protecting stainless steels against corrosion in both chemically aggressive environments and biological fluids. In the present work, cerium zirconium oxynitride thin films were deposited to enhance the corrosion resistance of surgical-grade stainless steel to be used in osteosynthesis processes. Two techniques were employed: co-sputtering and radiofrequency (RF) sputtering, and the morphology and corrosion efficiency of the coatings deposited by each technique were evaluated. X-ray diffraction, X-ray photoelectron spectroscopy and field emission transmission electron microscopy were used to characterize the morphological and chemical structure, respectively. Additionally, the corrosion resistance of the oxynitride-coated surgical grade stainless steel system (ZrCeOxNy-AISI 316L) was assessed using Hank’s solution as the corrosive electrolyte, to determine its resistance to corrosion in biological media. The results show that ZrCeOxNy coatings increase the corrosion resistance of surgical grade stainless steel by two orders of magnitude and that the Ce(III)/Ce(IV) equilibrium decreases the corrosion rate, thereby increasing the durability of the steel in a biological environment. The results show that Ce coatings increase the corrosion resistance of surgical grade stainless steel by two orders of magnitude and that the Ce(III)/Ce(IV) equilibrium decreases the corrosion rate, thereby increasing the durability of the steel in a biological environment.

Complex multilayer film structures were fabricated through a custom-built angular DC magnetron co-sputtering system. In this system, separate Cu, Al, and brass (Cu + Zn) targets were mounted on three magnetron guns, working in conjunction with a rotating substrate. This study aimed to compare the properties of films with intricate structures, which were sputtered onto glass slides and polypropylene substrates. The sputtering process was optimized using a Box–Behnken design, considering three variable operating conditions: substrate rotation speed, sputtering time, and sputtering voltage. The Analysis of Variance (ANOVA) results for film thickness and roughness, sputtered with three different materials onto glass slides and polypropylene (PP) substrates, indicated that all three independent variables significantly influenced the optimum response, with P-values less than 0.05 (

In this paper, we report on enhancing the biocompatibility properties of Hydroxyapatite-Titanium (HA-Ti) thin films fabricated using the co-sputtering method. By adjusting the HA/Ti ratio through varying the sputtering power of Ti, we obtained HA-Ti thin films with different crystal structures, morphologies, and hydrophilic properties. HA-Ti thin films sputtered at different titanium powers of 80, 100, 120, 140, and 160 W will obtain thin films with larger grain sizes and poorer crystallinity, respectively. However, their hydrophilic properties increase as the contact angle decreases from 78° to 20° degrees. In vitro BHK cell tests indicated that the HA-Ti thin film had excellent biocompatibility. Therefore, this material is suitable for biological applications and has significant potential in medical implant technology.

Improvement in crystallinity was investigated by compensating for stoichiometric deviations of non-selenization processed Cu0.9In0.7Ga0.3Se2 (CIGS) thin films due to highly volatile Se by co-sputtering them with Te followed by rapid thermal annealing. The prepared CIGS:Te thin films did not show any linear correlation between the compositional ratio and the co-sputtering time of Te; however, the deviation parameter (Δs) from the stoichiometry and normalized stoichiometric deviations of Se + Te and In + Ga were largely consistent with the behavior of thin-film properties. The proposed method provides better crystallinity with a large grain size, clear grain boundaries, and low microstrain and dislocation density, resulting in a large volume of the unit cell. The CIGS:Te thin films used as absorbers show improved optical properties compared to the conventional CIGS thin films, with Eg = 1.548 eV. These results can advance the low-cost commercialization of the enhanced-efficiency CIGS:Te thin films without the selenization process. [ABSTRACT FROM AUTHOR]

Ta doped TiN films were prepared on glass substrates by DC magnetron co-sputtering. The structure and properties of the obtained (Ti,Ta)N film were characterized by X-ray diffraction, Raman spectroscopy, ultraviolet/visible/near-infrared spectrophotometer and four probes method. The results show that with the increase of the sputtering power (PTa) for Ta target, the amount of Ta added to TiN lattice increases, resulting in a slight distortion of TiN lattice and stress transformation in the film. Correspondingly, the optical and electrical properties of the film changed. Raman spectrum was deconvoluted into five Lorentz peaks in the range of 50-1400 cm−1 and a new Raman peak appeared in all samples due to the substitution of Ta for Ti. The analysis of deconvolution results shows that the peak positions of different phonon modes and FWHM change, which may be related to the change of stress in the thin films caused by adding Ta to TiN lattice. The sample prepared with power of 50W has the maximum infrared emissivity of 1.35 and 0.43 at 2.5 and 25 μm wavelengths, respectively, indicating that (Ti,Ta)N film is promising candidate for replacing TiN in Low-E glass.

Abstract Due to their outstanding power density, long cycle life and low cost, supercapacitors have gained much interest. As for supercapacitor electrodes, molybdenum nitrides show promising potential. Molybdenum nitrides, however, are mainly prepared as nanopowders via a chemical route and require binders for the manufacture of electrodes. Such electrodes can impair the performance of supercapacitors. Herein, binder-free chromium (Cr)-doped molybdenum nitride (Mo2N) TFEs having different Cr concentrations are prepared via a reactive co-sputtering technique. The Cr-doped Mo2N films prepared have a cubic phase structure of γ-Mo2N with a minor shift in the (111) plane. While un-doped Mo2N films exhibit a spherical morphology, Cr-doped Mo2N films demonstrate a clear pyramid-like surface morphology. The developed Cr-doped Mo2N films contain 0–7.9 at.% of Cr in Mo2N lattice. A supercapacitor using a Cr-doped Mo2N electrode having the highest concentration of Cr reveals maximum areal capacity of 2780 mC/cm2, which is much higher than that of an un-doped Mo2N electrode (110 mC/cm2). Furthermore, the Cr-doped Mo2N electrode demonstrates excellent cycling stability, achieving ~ 94.6% capacity retention for about 2000 cycles. The reactive co-sputtering proves to be a suitable technique for fabrication of binder-free TFEs for high-performance energy storage device applications. Graphical Abstract

Heterojunction structures of n-ZnO/p-Si were prepared through the growth of undoped ZnO and (Gd, Al) co-doped ZnO films onto p-type Si (1 0 0) substrates, using a co-sputtering method. The structural and optical properties of the Gd-doped ZnO films were studied as a function of different Al doping concentrations. The X-ray diffraction profiles indicated that the films had a nanocrystalline structure of ZnO with a (0 0 2) preferential orientation. An increase in the Al doping concentration deteriorated the (0 0 2) diffraction peak intensity. The transmittance measurements in the UV–Vis wavelength range indicated that the film's optical gap increased with increase in Al doping concentration. The heterojunction parameters were evaluated using the current–voltage (I-V) characterization carried out of the fabricated n-ZnO/p-Si heterostructure, in dark conditions at room temperature. From these measurements, the n-ZnO-based DMS/p-Si heterojunction diode with the use of (Gd, Al) co-doped ZnO film showed the lowest leakage current of 1.28 × 10−8 A and an ideality factor η of 1.11, close to the ideal diode behavior of  η  = 1, compared to the n-Gd-doped ZnO/p-Si and n-undoped ZnO/p-Si heterojunction diodes. [ABSTRACT FROM AUTHOR]

This study demonstrated a silver (Ag) and samarium-doped ceria (SDC) mixed ceramic and metal composite (i.e., cermet) as a cathode for low-temperature solid oxide fuel cells (LT-SOFCs). Introducing the Ag-SDC cermet cathode for LT-SOFCs revealed that the ratio between Ag and SDC, which is a crucial factor for catalytic reactions, can be tuned by the co-sputtering process, resulting in enhanced triple phase boundary (TPB) density in the nanostructure. Ag-SDC cermet not only successfully performed as a cathode to increase the performance of LT-SOFCs by decreasing polarization resistance but also exceeded the catalytic activity of platinum (Pt) due to the improved oxygen reduction reaction (ORR). It was also found that less than half of Ag content was effective to increase TPB density, preventing oxidation of the Ag surface as well. [ABSTRACT FROM AUTHOR]

A co-sputtering process for the deposition of Fe0.8Ga0.2B alloy magnetostrictive thin films is studied in this paper. The soft magnetic performance of Fe0.8Ga0.2B thin films is modulated by the direct-current (DC) sputtering power of an FeGa target and the radio-frequency (RF) sputtering power of a B target. Characterization results show that the prepared Fe0.8Ga0.2B films are amorphous with uniform thickness and low coercivity. With increasing FeGa DC sputtering power, coercivity raises, resulting from the enhancement of magnetism and grain growth. On the other hand, when the RF sputtering power of the B target increases, the coercivity decreases first and then increases because of the conversion of the films from a crystalline to an amorphous state. The lowest coercivity of 7.51 Oe is finally obtained with the sputtering power of 20 W for the FeGa target and 60 W for the B target. Potentially, this optimization provides a simple way for improving the magnetoelectric coefficient of magnetoelectric composite materials and the sensitivity of magnetoelectric sensors.

This study explored the structural characteristics, mechanical properties, and oxidation behavior of W-enriched TaWSiN films prepared through co-sputtering. The atomic ratios [W/(W + Ta)] of the as-deposited films maintained a range of 0.77–0.81. The TaWSiN films with a Si content of 0–13 at.% were crystalline, whereas the film with 20 at.% Si was amorphous. The hardness and Young's modulus of crystalline TaWSiN films maintained high levels of 26.5–29.9 GPa and 286–381 GPa, respectively, whereas the hardness and Young's modulus of the amorphous Ta7W33Si20N40 films exhibited low levels of 18.2 and 229 GPa, respectively. The oxidation behavior of TaWSiN films was investigated after annealing at 600 °C in a 1%O2–Ar atmosphere, and cone-like Ta0.3W0.7O2.85 oxides formed and extruded from the TaWSiN films. [ABSTRACT FROM AUTHOR]

Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal structure with a large band gap of 6.2 eV. AlN thin films have several potential applications and areas for study, particularly in optoelectronics. This research study focused on the preparation of Ni-doped AlN thin films by using DC and RF magnetron sputtering for optoelectronic applications. Additionally, a comparative analysis was also carried out on the as-deposited and annealed thin films. Several spectroscopy and microscopy techniques were considered for the characterization of structural (X-ray diffraction), morphological (SEM), chemical bonding (FTIR), and emission (PL spectroscopy) properties. The XRD results show that the thin films have an oriented c-axis hexagonal structure. SEM analysis validated the granular-like morphology of the deposited sample, and FTIR results confirm the presence of chemical bonding in deposited thin films. The photoluminescence (PL) emission spectra exhibit different peaks in the visible region when excited at different wavelengths. A sharp and intense photoluminescence peak was observed at 426 nm in the violet-blue region, which can be attributed to inter-band transitions due to the incorporation of Ni in AlN. Most of the peaks in the PL spectra occurred due to direct-band recombination and indirect impurity-band recombination. After annealing, the intensity of all observed peaks increases drastically due to the development of new phases, resulting in a decrease in defects and a corresponding increase in the crystallinity of the thin film. The observed structural, morphological, and photoluminescence results suggest that Ni: AlN is a promising candidate to be used in optoelectronics applications, specifically in photovoltaic devices and lasers. [ABSTRACT FROM AUTHOR]

[Display omitted] • HIPIMS – ECWR with Fe and Sn targets leads to Fe 2 O 3 :Sn films with good PEC photoresponse. • Processing parameters (power to Fe and Sn target) correlate with the Sn content in the film. • When ECWR is added, the processing pressure and time can be reduced leading to better crystallinity and PEC behaviour. • doping by Sn(Pt) diffusion from the FTO(Pt) substrate significantly improved photoresponse. Semiconducting Fe 2 O 3 thin films were deposited on SnO 2 :F (FTO) and Pt substrates by reactive high-power impulse magnetron sputtering combined with electron cyclotron wave resonance plasma (HiPIMS + ECWR). Fe 2 O 3 films were fabricated either by sputtering from a single Fe target or by co-sputtering from an additional Sn target. Plasma parameters during co-sputtering were measured by an RF probe system enabling the comparison between HiPIMS + ECWR and only HiPIMS conditions used for the film deposition. As deposited Fe 2 O 3 films were post-annealed in air at 450 °C and 650 °C, respectively. It was shown that as deposited Fe 2 O 3 films were amorphous but became crystalline after post-annealing at 450 °C. Further increase of annealing temperature to 650 °C did not improve significantly the crystalline structure of the Fe 2 O 3 film. All post-annealed Fe 2 O 3 films exhibited photocurrents in the anodic region; generally, hematite films annealed at 650 °C exhibited higher photocurrents than those annealed at 450 °C. Films doped by Sn co-sputtering had higher photocurrents than films only doped by Sn diffusion during post-annealing from the FTO substrate. Hematite films on Pt substrate doped by Sn co-sputtering and post-annealed at 650 °C exhibited the highest photocurrents. It was verified by XPS analysis with ion sputtering depth profiling that Pt atoms also diffuse from the Pt substrate into the Fe 2 O 3 film during the post-annealing at 650 °C and can, similar to Sn in the case of an FTO substrate, act as a dopant. [ABSTRACT FROM AUTHOR]

Due to their outstanding power density, long cycle life and low cost, supercapacitors have gained much interest. As for supercapacitor electrodes, molybdenum nitrides show promising potential. Molybdenum nitrides, however, are mainly prepared as nanopowders via a chemical route and require binders for the manufacture of electrodes. Such electrodes can impair the performance of supercapacitors. Herein, binder-free chromium (Cr)-doped molybdenum nitride (Mo2N) TFEs having different Cr concentrations are prepared via a reactive co-sputtering technique. The Cr-doped Mo2N films prepared have a cubic phase structure of γ-Mo2N with a minor shift in the (111) plane. While un-doped Mo2N films exhibit a spherical morphology, Cr-doped Mo2N films demonstrate a clear pyramid-like surface morphology. The developed Cr-doped Mo2N films contain 0–7.9 at.% of Cr in Mo2N lattice. A supercapacitor using a Cr-doped Mo2N electrode having the highest concentration of Cr reveals maximum areal capacity of 2780 mC/cm2, which is much higher than that of an un-doped Mo2N electrode (110 mC/cm2). Furthermore, the Cr-doped Mo2N electrode demonstrates excellent cycling stability, achieving ~ 94.6% capacity retention for about 2000 cycles. The reactive co-sputtering proves to be a suitable technique for fabrication of binder-free TFEs for high-performance energy storage device applications. [ABSTRACT FROM AUTHOR]

The model to tailor the required chemical composition of thin films fabricated via multisource deposition, exploiting basic physicochemical constants of source materials, is developed. The model is experimentally verified for the two-source depositions of chalcogenide thin films from Ga–Sb–Te system (tie-lines GaSb–GaTe and GaSb–Te). The thin films are deposited by radiofrequency magnetron sputtering using GaSb, GaTe, and Te targets. Prepared thin films are characterized by means of energy dispersive X-ray analysis coupled with a scanning electron microscope to determine the chemical composition and by variable angle spectroscopic ellipsometry to establish film thickness. Good agreement between results of calculations and experimentally determined compositions of the co-deposited thin films is achieved for both the above-mentioned tie-lines. Moreover, in spite of all the applied simplifications, the proposed model is robust to be generally used for studies where the influence of thin film composition on their properties is investigated. [ABSTRACT FROM AUTHOR]

Direct-methane solid oxide fuel cells (DMSOFCs) have recently attracted substantial attention due to their simplified system, reduced cost, and the direct availability of methane fuel obtained from natural gas. Among oxygen-ion conductive materials, doped-ceria such as gadolinium-doped ceria (GDC) or samarium-doped ceria can be incorporated into Ni-based anodes to reinforce their coking resistance, enlarge their electrochemical reaction area, and improve the kinetics of the internal reforming/electrochemical oxidation of methane. To reduce the range of operating temperatures of DMSOFCs while maintaining their performance, the thin film deposition technique of magnetron sputtering was adopted in this work. An Ni-GDC thin-film anode and a Pt thin-film cathode were deposited on scandia-stabilized zirconia (ScSZ) electrolyte supports. This fuel cell was tested with directly supplied methane fuel (3% H 2 O) at 500 °C. The results demonstrated the effects of the GDC volume fraction in the anode—which was controlled by co-sputtering power—on open circuit voltage and electrochemical performance. The co-sputtered Ni-GDC anode was able to survive through 36-h operation, although there was some performance degradation. Field-emission scanning electron microscopy results revealed no formation of filamentous carbon on the Ni catalysts, despite the fact that both X-ray photoelectron spectroscopy and Raman spectroscopy analyses detected carbon coking. The relatively high performance and resistance to carbon coking of co-sputtered thin-film anode were attributed to its intrinsic small grain size. [ABSTRACT FROM AUTHOR]

This work focused on the microstructure and mechanical properties of (Mo, Hf)N coatings deposited by radio frequency reactive magnetron co-sputtering technique with input power modulation. The coating characteristics, including indentation hardness, modulus, and tribological behavior, were discussed in terms of deposition parameter, composition, phase, and microstructure. The (Mo, Hf)N thin films were fabricated at a fixed Ar/N2 inlet gas ratio of 12/8 sccm/sccm and modulated input powers. The input power of Mo was fixed at 150 W, while that of the Hf target was managed from 25 to 200 W. The deposition rate and the Hf content of the (Mo, Hf)N coatings increased with input power. The (Mo, Hf)N ternary nitride coatings showed a polycrystalline microstructure with B1-MoN(111), β-Mo2N (112), γ-Mo2N(111), (200), and MoN2(200) phases in X-ray diffraction patterns as input power modulation were 150/25 to 150/100 W/W. The multiple phase microstructure feature and detail crystal development were demonstrated through transmission electron microscopy. According to nanoindentation and wear test results, ternary (Mo, Hf)N coatings represented more improved mechanical characteristics than the MoN and HfN binary nitride films. The 150/100 W/W deposited (Mo, Hf)N coating exhibited a highest hardness of 22.5 GPa when Hf content was at 5.6 at.%. The superior anti-wear behavior of this film with least wear damage was observed as well. The multiphase and solid-solution strengthening of the (Mo, Hf)N coatings, i.e., a microstructure feature of mixed B1-MoN, β-Mo2N, γ-Mo2N, and MoN2 phases and Hf doping in MoN, were the responsible for the superior mechanical and tribological behavior for the (Mo, Hf)N coatings. [ABSTRACT FROM AUTHOR]

By combining Gd dopant induction and magnetron sputtering technique, vertically-aligned Gd-doped WO 3 nano-stalagmite arrays (GW-NSs) have been first constructed on the ITO-coated glass substrate, which exhibits a significantly improved electrochromic and capacitive performance. Moreover, an electrochromic energy storage smart window (EESW) device is further fabricated by assembling the GW-NSs electrode and an opposite NiO electrode toward practical bifunctional application. [Display omitted] • Gd-doped WO 3 nano-stalagmites (GW-NSs) array with vertical alignment have been successfully synthesized on ITO-coated glass substrates via co-sputtering method, which can possess optimized aspect ratio and array density by precise parameter optimal design (Gd/W, sputtering times, etc). • The optimized GW-NSs film exhibits a significantly improved electrochromic and capacitive performance, which could be attributed to its large surface area of nano-array structures induced by Gd doping, significantly increasing the number of the active sites and meanwhile facilitate the Li+ ions diffusion. • Dual-functional smart window device assembled with the GW-NSs and NiO counter electrode is demonstrated with ability to visually monitor the level of stored energy from the rapid and reversible color variation, indicating the potential applications of GW-NSs in both electrochromic and energy-storage fields. Gd-doped WO 3 nano-stalagmites (GW-NSs) film has been successfully prepared on indium-doped tin oxide (ITO)-coated glass substrates by co-sputtering deposition. Gd dopants can facilitate the vertically-aligned growth of WO 3 nano-stalagmites on the WO 3 -nanoparticle seed layer. The microstructure analysis shows that the GW-NSs film with optimized aspect ratio and array density is fabricated with Gd/W = 0.6 % in atomic ratio. Such GW-NSs electrode (active area: 1 × 1.5 cm2) exhibits large transmittance modulation (ΔT = 52.7 % at 633 nm), high coloration efficiency (87.3 cm2 C−1 at 633 nm), fast switching speed (5.9/13.1 s for coloration/bleaching), large diffusion coefficient (9.52 × 10−10 cm2 s−1) and long-term cycling stability (>2000) under an applied voltage of ± 1.0 V, which can be attributed to a shorten Li+ diffusion distance and a large-area contact with the electrolyte. Importantly, the GW-NSs film also shows superior capacitive performance (calculated areal capacitance of 8.44 mF cm−2 at 0.4 mA cm−2) and long-term cyclic stability (capacitance retention rate is 87.4 % after 2000 cycles). Furthermore, we fabricated the bifunctional smart window device combined with NiO counterpart electrode, which has the ability to visually monitor the level of stored energy from rapid and reversible coloration, indicating the potential applications of GW-NSs in both electrochromic and energy-storage fields. [ABSTRACT FROM AUTHOR]

Platinum (Pt) and Samaria-doped ceria (SDC) as cermet cathodes were investigated to enhance oxygen reduction reaction (ORR) kinetics in low-temperature solid oxide fuel cells (SOFCs). Pt is widely known for its high catalytic activity, whereas SDC is one of the most promising oxide ionic conductors as an LT-SOFC electrolyte. To improve both the catalytic activity and oxygen ionic transportation, a co-sputtering technique was used to fabricate a composite cathode by adjusting the elemental composition of Pt and SDC. This technique demonstrated that the Pt-SDC cermet cathode can increase the electrochemical reaction sites and offer a percolated pathway for rapid electron-ion conduction within the cermet structure. The electrochemical analysis results also revealed that the fuel cells coated with Pt-SDC cermet cathodes outperformed the pure Pt-coated fuel cells in terms of peak power density. The electrochemical impedance spectroscopy analysis indicated that the improved ORR kinetics of Pt-SDC cermet cathodes were the main reason for the improved fuel cell performance by catalyzing both electron and oxygen ion conduction. • Pt-SDC cermet cathodes were fabricated via co-sputtering technique for LT-SOFCs. • The chemical composition of cermet cathodes was controlled by RF power of SDC. • The TPB density can be enlarged by mixing the both Pt and SDC with co-sputtering. • Optimized ratio of Pt and SDC can provide the percolating path for charge transport. • Pt-SDC cermet cathode can increase the performance of fuel cell by catalyzing ORR. [ABSTRACT FROM AUTHOR]

Improvement in crystallinity was investigated by compensating for stoichiometric deviations of non-selenization processed Cu0.9In0.7Ga0.3Se2 (CIGS) thin films due to highly volatile Se by co-sputtering them with Te followed by rapid thermal annealing. The prepared CIGS:Te thin films did not show any linear correlation between the compositional ratio and the co-sputtering time of Te; however, the deviation parameter (Δs) from the stoichiometry and normalized stoichiometric deviations of Se + Te and In + Ga were largely consistent with the behavior of thin-film properties. The proposed method provides better crystallinity with a large grain size, clear grain boundaries, and low microstrain and dislocation density, resulting in a large volume of the unit cell. The CIGS:Te thin films used as absorbers show improved optical properties compared to the conventional CIGS thin films, with Eg = 1.548 eV. These results can advance the low-cost commercialization of the enhanced-efficiency CIGS:Te thin films without the selenization process.

Heterojunction structures of n-ZnO/p-Si were prepared through the growth of undoped ZnO and (Gd, Al) co-doped ZnO films onto p-type Si (1 0 0) substrates, using a co-sputtering method. The structural and optical properties of the Gd-doped ZnO films were studied as a function of different Al doping concentrations. The X-ray diffraction profiles indicated that the films had a nanocrystalline structure of ZnO with a (0 0 2) preferential orientation. An increase in the Al doping concentration deteriorated the (0 0 2) diffraction peak intensity. The transmittance measurements in the UV–Vis wavelength range indicated that the film’s optical gap increased with increase in Al doping concentration. The heterojunction parameters were evaluated using the current–voltage (I-V) characterization carried out of the fabricated n-ZnO/p-Si heterostructure, in dark conditions at room temperature. From these measurements, the n-ZnO-based DMS/p-Si heterojunction diode with the use of (Gd, Al) co-doped ZnO film showed the lowest leakage current of 1.28 × 10−8 A and an ideality factor η of 1.11, close to the ideal diode behavior of η = 1, compared to the n-Gd-doped ZnO/p-Si and n-undoped ZnO/p-Si heterojunction diodes.

This study demonstrated a silver (Ag) and samarium-doped ceria (SDC) mixed ceramic and metal composite (i.e., cermet) as a cathode for low-temperature solid oxide fuel cells (LT-SOFCs). Introducing the Ag-SDC cermet cathode for LT-SOFCs revealed that the ratio between Ag and SDC, which is a crucial factor for catalytic reactions, can be tuned by the co-sputtering process, resulting in enhanced triple phase boundary (TPB) density in the nanostructure. Ag-SDC cermet not only successfully performed as a cathode to increase the performance of LT-SOFCs by decreasing polarization resistance but also exceeded the catalytic activity of platinum (Pt) due to the improved oxygen reduction reaction (ORR). It was also found that less than half of Ag content was effective to increase TPB density, preventing oxidation of the Ag surface as well.

Abstract A sneak path current—a current passing through a neighboring memory cell—is an inherent and inevitable problem in a crossbar array consisting of memristor memory cells. This serious problem can be alleviated by serially connecting the selector device to each memristor cell. Among the various types of selector device concepts, the diffusive selector has garnered considerable attention because of its excellent performance. This selector features volatile threshold switching (TS) using the dynamics of active metals such as Ag or Cu, which act as an electrode or dopant in the solid electrolyte. In this study, a diffusive selector based on Ag-doped HfOx is fabricated using a co-sputtering system. As the Ag concentration in the HfOx layer varies, different electrical properties and thereby TS characteristics are observed. The necessity of the electroforming (EF) process for the TS characteristic is determined by the proper Ag concentration in the HfOx layer. This difference in the EF process can significantly affect the parameters of the TS characteristics. Therefore, an optimized doping condition is required for a diffusive selector to attain excellent selector device behavior and avoid an EF process that can eventually degrade device performance.

In this study, the impact of compositional variation in high resistance transparent (HRT) metal oxide ZTO films of thickness around 100nm has been investigated. The atomic composition in the films has been tailored by the change of RF power and sub-sequent thermal oxygenation in mixed nitrogen and oxygen atmosphere. A phase transition from ZnSnO3 to ZnSnO4 was observed in the X-ray diffraction spectra, indicating the possible oxygen incorporation into the films during the thermal annealing process. Uniform microstructures with compact interconnected grains of around 6-7 nm were found in SEM images while no significant changes been observed upon oxygenation. Besides, the significant alteration of electronic properties was noticed as an effect of compositional variation via oxygenation. All the films showed above 85% of optical transmittance in the visible light spectrum. The optimum optoelectronic properties for RF power has been determined as of 50W (ZnO) and 10W (SnO2) via thermal oxygenation at 400°C where the ratio O/(Zn+Sn) become around 1.6. The significant effect of oxygenation has been realized via primarily fabricated solar cells where the cell with ZnSnO4HRT shows higher efficiency than the ZnSnO3.

Thin films of transition metal oxides and oxynitrides have proven highly effective in protecting stainless steels against corrosion in both chemically aggressive environments and biological fluids. In the present work, cerium zirconium oxynitride thin films were deposited to enhance the corrosion resistance of surgical-grade stainless steel to be used in osteosynthesis processes. Two techniques were employed: co-sputtering and radiofrequency (RF) sputtering, and the morphology and corrosion efficiency of the coatings deposited by each technique were evaluated. X-ray diffraction, X-ray photoelectron spectroscopy and field emission transmission electron microscopy were used to characterize the morphological and chemical structure, respectively. Additionally, the corrosion resistance of the oxynitride-coated surgical grade stainless steel system (ZrCeO x N y -AISI 316L) was assessed using Hank's solution as the corrosive electrolyte, to determine its resistance to corrosion in biological media. The results show that ZrCeO x N y coatings increase the corrosion resistance of surgical grade stainless steel by two orders of magnitude and that the Ce(III)/Ce(IV) equilibrium decreases the corrosion rate, thereby increasing the durability of the steel in a biological environment. The results show that Ce coatings increase the corrosion resistance of surgical grade stainless steel by two orders of magnitude and that the Ce(III)/Ce(IV) equilibrium decreases the corrosion rate, thereby increasing the durability of the steel in a biological environment.

In this research, a nanoporous platinum film is synthesized using the dealloying method. Platinum–copper (Pt–Cu) alloy films with a thickness of approximately 50 nm are prepared on glass using the magnetron-co-sputtering technique. In order to obtain nanoporous Pt, the Pt–Cu alloy films are dealloyed in 1 M nitric acid solution for different intervals. It is observed that when dealloyed in the nitric acid solution for 5 h, Cu was completely removed from the alloy, and nanoporous Pt with a regular pore structure was obtained. Then, the fabricated nanoporous Pt film is tested for hydrogen detection in the concentration range of 10 ppm and–5% hydrogen at various temperatures. The results demonstrated that the sensitivity of nanoporous Pt is about 6.5 for exposure to 1% hydrogen, and the sensing mechanism of nanoporous Pt could be explained by the surface scattering phenomenon.

This study explored the structural characteristics, mechanical properties, and oxidation behavior of W-enriched TaWSiN films prepared through co-sputtering. The atomic ratios [W/(W + Ta)] of the as-deposited films maintained a range of 0.77–0.81. The TaWSiN films with a Si content of 0–13 at.% were crystalline, whereas the film with 20 at.% Si was amorphous. The hardness and Young’s modulus of crystalline TaWSiN films maintained high levels of 26.5–29.9 GPa and 286–381 GPa, respectively, whereas the hardness and Young’s modulus of the amorphous Ta7W33Si20N40 films exhibited low levels of 18.2 and 229 GPa, respectively. The oxidation behavior of TaWSiN films was investigated after annealing at 600 °C in a 1%O2–Ar atmosphere, and cone-like Ta0.3W0.7O2.85 oxides formed and extruded from the TaWSiN films.

Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal structure with a large band gap of 6.2 eV. AlN thin films have several potential applications and areas for study, particularly in optoelectronics. This research study focused on the preparation of Ni-doped AlN thin films by using DC and RF magnetron sputtering for optoelectronic applications. Additionally, a comparative analysis was also carried out on the as-deposited and annealed thin films. Several spectroscopy and microscopy techniques were considered for the characterization of structural (X-ray diffraction), morphological (SEM), chemical bonding (FTIR), and emission (PL spectroscopy) properties. The XRD results show that the thin films have an oriented c-axis hexagonal structure. SEM analysis validated the granular-like morphology of the deposited sample, and FTIR results confirm the presence of chemical bonding in deposited thin films. The photoluminescence (PL) emission spectra exhibit different peaks in the visible region when excited at different wavelengths. A sharp and intense photoluminescence peak was observed at 426 nm in the violet-blue region, which can be attributed to inter-band transitions due to the incorporation of Ni in AlN. Most of the peaks in the PL spectra occurred due to direct-band recombination and indirect impurity-band recombination. After annealing, the intensity of all observed peaks increases drastically due to the development of new phases, resulting in a decrease in defects and a corresponding increase in the crystallinity of the thin film. The observed structural, morphological, and photoluminescence results suggest that Ni: AlN is a promising candidate to be used in optoelectronics applications, specifically in photovoltaic devices and lasers.

Sn-Si composite anodes with linear variation composition could be synthesized by co-sputtering method directly. Ductile Sn was used as an additive material for improving the capacity and electrical conductivity of the brittle Si since the synergetic effect. The deposited films possessed a unique phase-separated structure and is beneficial to buffer the volume expansion introduced by an alloying/dealloying process, and the distributed Sn particles improved the transportation of Li+ and remedy the inherent poor conductivity of Si. As a result, the optimal Sn-Si composite film (Sn:Si = 35.9:64.1) possessed a stable discharge capacity of 1134.0 mAh/g after two cycles and a high-capacity retention of 82.8% after 50 cycles. Si played an important role as a buffer matrix, and the increased Si content could suppress the growth of Sn grains, reduce the structural damage and enhance film adhesion. The obtained Sn-Si component film was one strong candidate for next-generation thin film anode. [ABSTRACT FROM AUTHOR]

We report the unexpectedly excellent dielectric properties of amorphous thin films with compositions in the Bi–Ti–O system. Films were deposited by RF magnetron reactive co-sputtering. In the composition range of 0.5 < x < 0.7, amorphous Bi1−xTixOy exhibits excellent dielectric properties, with a high dielectric constant, 𝜀r ∼ 53, and a dissipation factor as low as tan δ = 0.007. The corresponding maximum breakdown field reaches ∼1.6 MV/cm, yielding a maximum stored charge per unit area of up to 8 μC/cm2. This work demonstrates the potential of amorphous Bi–Ti–O as a high-performance thin-film dielectric material that is compatible with high-performance integrated circuits.

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We report the unexpectedly excellent dielectric properties of amorphous thin films with compositions in the Bi–Ti–O system. Films were deposited by RF magnetron reactive co-sputtering. In the composition range of 0.5 < x < 0.7, amorphous Bi 1 − x Ti x O y exhibits excellent dielectric properties, with a high dielectric constant, 𝜀 r ∼ 53, and a dissipation factor as low as tan δ = 0.007. The corresponding maximum breakdown field reaches ∼ 1.6 MV/cm, yielding a maximum stored charge per unit area of up to 8 μ C/cm2. This work demonstrates the potential of amorphous Bi–Ti–O as a high-performance thin-film dielectric material that is compatible with high-performance integrated circuits. [ABSTRACT FROM AUTHOR]

Metallic glasses have received attention in the world of materials science and engineering due to their high mechanical and tribological properties. Thin film nanostructured metallic glasses have shown great prospects as surface coatings with increasing applications in biomedical areas for implants and surgical devices. In this work, we deposited titanium- and zirconium-based polymorphous thin film metallic glasses (Ti–Fe–Cu, Zr–Fe–Al, Zr–W–Cu) on medical-grade polished titanium substrate by co-sputtering using a PVD system. The corrosion behaviour of the films was investigated by exposing the samples to sterile simulated body fluid and examined using electrochemistry, microscopy, and spectroscopic analyses. The polymorphic properties of the films after exposure to simulated body fluid were observed by SEM and TEM. SEM analysis shows that the surface morphology of the exposed samples was found to vary significantly compared to their corresponding as-deposited samples. Electrochemical properties (E corr , I corr , and OCV, impedance |Z|) demonstrated that the thin film metallic glasses were found to enhance the corrosion resistance of the substrate. Further investigations of the exposed films by XPS and Raman analyses have revealed that the induced oxide passive layer significantly enhanced the corrosion efficacy of the films on titanium substrate. Among the three samples, Zr–W–Cu coating has shown the highest corrosion protection almost 450 times better than the bare titanium substrate. [Display omitted] • Polymorphous thin film metallic glass mitigates corrosion by formation of oxide layers. • Polymorphous thin film metallic glass coating offers protection from corrosion in the body environment for Ti substrates. • Zr-based (ZrWCu) nanostructured polymorphous thin film metallic glass significantly deters biocorrosion on Ti substrates. [ABSTRACT FROM AUTHOR]

• Al-doped Ta 2 O 5 (Ta 2 O 5 :Al) thin films were prepared using a simple co-sputtering method for the first time. • NIR light emission in the wavelength range of around 700 to 1000 nm without using rare-earth elements were successfully obtained. • The NIR light emission is due to the superposition of three emission peaks around wavelengths of 800, 870, and 950 nm. • XRD analyses revealed that the origin of the NIR light emission is related to AlTaO 4 present in the Ta 2 O 5 :Al thin film annealed at 900 °C. We fabricated aluminum-doped tantalum-oxide (Ta 2 O 5 :Al) thin films using a simple co-sputtering method and observed broad near-infrared (NIR) light emission with wavelengths around 700 to 1000 nm from a sample annealed at 900 °C without rare-earth elements. The NIR light emission is thought to be due to the superposition of three emission peaks around wavelengths of 800, 870, and 950 nm, and X-ray diffraction analyses revealed that the origin of the NIR light emission is related to AlTaO 4 present in the Ta 2 O 5 :Al thin film. [ABSTRACT FROM AUTHOR]

Abstract In this study, we develop a facile method to fabricate highly sensitive and stable surface-enhanced Raman scattering (SERS) substrate, which is realized by combining co-sputtering with atomic layer deposition technology. To accomplish the SERS substrate preparation, we firstly utilized co-sputtering silver and aluminum on glass slides to form uniform discontinuous Ag film by removing Al later, which acted as SERS active moiety and presented high sensitivity in glycerin detection. After coating an ultrathin TiO2 layer via atomic layer deposition (ALD), the samples could further enhance the Raman signal due to the chemical effect as well as the long-range effect of the enhanced electromagnetic field generated by the encapsulated Ag nanoparticles (NPs). Besides, the coated sample could maintain the significant enhancement in air condition for more than 30 days. The high stability is induced by TiO2 layer, which efficiently prevents Ag NPs from surface oxidation. This highly sensitive and stable SERS substrate might highlight the application of interface state investigation for exploring novel liquid lubricating materials.

The model to tailor the required chemical composition of thin films fabricated via multisource deposition, exploiting basic physicochemical constants of source materials, is developed. The model is experimentally verified for the two-source depositions of chalcogenide thin films from Ga–Sb–Te system (tie-lines GaSb–GaTe and GaSb–Te). The thin films are deposited by radiofrequency magnetron sputtering using GaSb, GaTe, and Te targets. Prepared thin films are characterized by means of energy dispersive X-ray analysis coupled with a scanning electron microscope to determine the chemical composition and by variable angle spectroscopic ellipsometry to establish film thickness. Good agreement between results of calculations and experimentally determined compositions of the co-deposited thin films is achieved for both the above-mentioned tie-lines. Moreover, in spite of all the applied simplifications, the proposed model is robust to be generally used for studies where the influence of thin film composition on their properties is investigated.

Silver (Ag), palladium (Pd), and bimetallic silver-palladium (Ag-Pd) coatings were deposited on a mild steel surface by the co-sputtering method. The aim was to investigate and compare the corrosion behavior of Ag-Pd nano-coatings as well as the effect of increasing the weight ratio of Ag in the Ag-Pd alloy in the 3.5% NaCl solution. The corrosion protection performance and barrier protection properties were monitored using electrochemical impedance spectroscopy and potentiodynamic polarization. The surface of the coatings was characterized by scanning electron microscopy, atomic force microscopy, energy-dispersive x-ray spectroscopy, and field-emission scanning electron microscopy. The results of corrosion measurements revealed a relationship between silver wt.% and corrosion resistance. Also, all the coatings had protective effects and barrier properties on the mild steel in the corrosive solution. The best efficiency was observed in silver monometallic coating with 54 nm thickness. [ABSTRACT FROM AUTHOR]

In this study, various indium zinc tin oxide (IZTO) films were fabricated using co-sputtering to explore amorphous transparent conducting oxides as alternatives to crystalline indium tin oxide (ITO). Various Zn ratios were tuned to study their effects on the structural evolution of IZTO. Amorphous IZTO (aIZTO) films were obtained when the Zn concentration was higher than approximately 17 at.%. X-ray diffraction and transmission electron microscopy analyses indicated that amorphous structures were formed due to the high crystallization temperatures of IZTO and nanocrystalline In2Zn5O8, which also caused aIZTO to exhibit small band gaps. On average, 87% transmittance was achieved in the visible light range. The aIZTO films had substantially higher transmittance in the infrared region than the ITO films did. Samples with Zn ratios between approximately 17 at.% and 27 at.% exhibited resistivity (approximately 3 × 10−4 Ω-cm), mobility (7 cm2 V−1 s−1), and carrier concentrations (4 × 1021 cm−3) comparable to those of crystalline ITO. Thus, the aIZTO films are promising alternative TCO materials. The mechanisms of competition between the crystallinity, oxygen deficiency, high-mobility In2Zn5O8, and electron and hole generation rates were applied to shed light on the excellent electrical and transport properties of aIZTO films. [ABSTRACT FROM AUTHOR]

Nb-doped ZnO thin films were fabricated on glass substrates by using co-sputtering with direct-current and radio frequency magnetron sputtering. The structures, optical and electrical performances of Nb-doped ZnO thin films were investigated. The results showed that all thin films have (0 0 2) c-axis preferential orientation. The minimum resistivity of 2.12×10−3Ωcm and the maximum carrier concentration of 2.39×1019cm−3 were obtained at the direct-current sputtering power of 10W, respectively. Nb-doped ZnO thin films have also shown high average transmittance of 89.6%, and lower surface roughness of 2.74nm. Meanwhile, a distinct absorption edge in the ultraviolet range of 300–400nm was observed in absorbance, the optical band gap of Nb-doped ZnO thin films illustrates an increased tendency with increasing Nb concentration.

The microstructures and mechanical behavior of high-temperature co-sputtered Cu/Mo nanocomposites were investigated and compared with Cu/Mo multilayers. The co-sputtered nanocomposites present hierarchical architectures with bicontinuous intertwined Cu/Mo phases, the feature size of which can be tuned from 35 to 3 nm by changing the deposition parameters. After indentation, shear bands were found in the multilayers but not in the hierarchical nanocomposites. In situ nanocompression tests in Transmission electron microscopy showed that the hierarchical nanocomposite containing fine-length-scale intertwined Cu/Mo phases has very high strength. The hierarchical structure is proposed to play an important role in suppressing shear band formation. Impact statement Cu/Mo nanocomposites with novel hierarchical architecture containing bicontinuous intertwined structures were fabricated through co-sputtering. High strength and good deformability were achieved in the nanocomposites through in situ nanomechanical testing.

Bi2Te3-based materials have been widely utilized for commercial bulk thermoelectric (TE) devices. For the manufacture of miniaturized TE devices, the large-scale deposition of high-performance Bi2Te3-based thin films is crucial. However, it has not yet been effectively resolved. Herein, the Bi0.5Sb1.5Te3 films with different thicknesses were grown on sapphire substrates by controlling the co-sputtering time. We reveal that the film thickness has a significant impact on the electrical transport properties. Due to the mutual influence of electrical conductivity and Seebeck coefficient, there exists an optimal thickness with the maximum power factor is as high as 2900 μW m−1 K−2. Therefore, systematic research on the thickness-dependent TE characteristics of Bi2Te3-based films and the deposition of high-performance films will provide important information for the large-scale development of high-performance micro-TE devices. [ABSTRACT FROM AUTHOR]

Complex three-dimensional nanosheet structure of Zn x Fe y O was prepared by highly stable co-sputtering oblique angle deposition. Scanning electron microscopy was employed to observe surface morphology evolution of Zn x Fe y O with different Fe concentrations. X-ray diffraction was employed to analyze compositions of ZnO, ZnFe 2 O 4 , and ZnFe 2 O 4 /Fe 2 O 3 with Fe doping. Furthermore, specific nanostructures of Zn x Fe y O decreased band gap and increased visible-light absorption ability. The ZnFe 2 O 4 /Fe 2 O 3 sample exhibited higher photocatalytic efficiency than those of other films for the degradation of methylene blue. Addition of Fe led to the enhancement of photoelectrochemical properties of ZnFe 2 O 4 /Fe 2 O 3 compared to pure ZnO and Fe 2 O 3 , and photocurrent response of ZnFe 2 O 4 /Fe 2 O 3 was ~10 times than that of pure ZnO at constant potential of −0.2 V (vs. Ag/AgCl). [ABSTRACT FROM AUTHOR]

L10-FePt nanoparticles with different Ag percentages were prepared. The presence of 6% Ag in co-sputtering process with deposition rate of 1 A ˙ / s at 500 °C led to the formation of FePt nanoparticles with 5–7 nm size in L10-fct phase. Moreover, Ag atoms laying in boundaries of these nanoparticles in these circumstances caused c axis to orient and (001) peak intensity in XRD spectrum to increase. This is the result of the indirect exchange interactions of Fe magnetic atoms through Ag atoms in these boundaries. Therefore, where L10-FePt grains have the most boundaries with each other, the order index would be maximum. [ABSTRACT FROM AUTHOR]

In this study, new barrier-free Cu(NbC) alloy films with two different thicknesses, i.e., 8 and 300 nm, containing 0.3 at% C and 0.5 at% Nb, which are deposited via co-sputtering on three types of substrates, viz., Si, stainless steel and polyimide (PI), have been developed, annealed, measured and analysed. The resistivity value of the new 300-nm-thick films atop Si substrates is 3.07 μ Ω cm after annealing at 450 ∘ C for 200 h. The low resistivity and diffusion depth of the new films exhibit their good quality in anti-oxidation stability in a high-temperature environment. The films also display high-adhesive strength atop either stainless-steel or PI substrates, ∼ 7–8 times greater than that of their pure-Cu counterparts. In sharp contrast, the antibacterial ratio of the new films is ∼ 96 % while that of their pure-Cu counterparts is 0%. In addition, the contact angles of Cu(NbC) films are greater than those of their pure-Cu counterparts, resulting in a far superior antibacterial efficacy for the new films to pure-Cu films against, for example, Staphylococcusaureus BCRC 10451. With these desirable merits, the new films seem to be a good candidate material for bacteria killing and prevention, reduction of legionella spread inside hospitals and / or large buildings, biological medical care systems and advanced surgical tools. The new films deposited on PI substrates also seem to be suitable for making supple electrically conductive parts or devices, such as flexible panels, keyboards, screens, smartphones embedded in smart textiles and so forth. [ABSTRACT FROM AUTHOR]