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Cu(In,Ga)Se2:Te Thin Films for Stoichiometric Compensation by Using Co-Sputtering and Rapid Thermal Annealing
- Source :
- Applied Sciences, Vol 13, Iss 7, p 4284 (2023)
- Publication Year :
- 2023
- Publisher :
- MDPI AG, 2023.
-
Abstract
- Improvement in crystallinity was investigated by compensating for stoichiometric deviations of non-selenization processed Cu0.9In0.7Ga0.3Se2 (CIGS) thin films due to highly volatile Se by co-sputtering them with Te followed by rapid thermal annealing. The prepared CIGS:Te thin films did not show any linear correlation between the compositional ratio and the co-sputtering time of Te; however, the deviation parameter (Δs) from the stoichiometry and normalized stoichiometric deviations of Se + Te and In + Ga were largely consistent with the behavior of thin-film properties. The proposed method provides better crystallinity with a large grain size, clear grain boundaries, and low microstrain and dislocation density, resulting in a large volume of the unit cell. The CIGS:Te thin films used as absorbers show improved optical properties compared to the conventional CIGS thin films, with Eg = 1.548 eV. These results can advance the low-cost commercialization of the enhanced-efficiency CIGS:Te thin films without the selenization process.
Details
- Language :
- English
- ISSN :
- 20763417
- Volume :
- 13
- Issue :
- 7
- Database :
- Directory of Open Access Journals
- Journal :
- Applied Sciences
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.846b643c929340628e9dd387a007a8d6
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/app13074284