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Dielectric properties of amorphous Bi–Ti–O thin films.
- Source :
- Journal of Advanced Dielectrics; Apr2021, Vol. 11 Issue 2, pN.PAG-N.PAG, 5p
- Publication Year :
- 2021
-
Abstract
- We report the unexpectedly excellent dielectric properties of amorphous thin films with compositions in the Bi–Ti–O system. Films were deposited by RF magnetron reactive co-sputtering. In the composition range of 0.5 < x < 0.7, amorphous Bi 1 − x Ti x O y exhibits excellent dielectric properties, with a high dielectric constant, 𝜀 r ∼ 53, and a dissipation factor as low as tan δ = 0.007. The corresponding maximum breakdown field reaches ∼ 1.6 MV/cm, yielding a maximum stored charge per unit area of up to 8 μ C/cm<superscript>2</superscript>. This work demonstrates the potential of amorphous Bi–Ti–O as a high-performance thin-film dielectric material that is compatible with high-performance integrated circuits. [ABSTRACT FROM AUTHOR]
- Subjects :
- THIN films
DIELECTRICS
BISMUTH titanate
AMORPHOUS substances
SPUTTERING (Physics)
Subjects
Details
- Language :
- English
- ISSN :
- 2010135X
- Volume :
- 11
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Journal of Advanced Dielectrics
- Publication Type :
- Academic Journal
- Accession number :
- 150390605
- Full Text :
- https://doi.org/10.1142/S2010135X21500090