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13 results on '"Yi-tae Kim"'

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1. 7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation

2. 7.1 A 4-tap 3.5 μm 1.2 Mpixel Indirect Time-of-Flight CMOS Image Sensor with Peak Current Mitigation and Multi-User Interference Cancellation

3. A 2.8 μm Pixel for Time of Flight CMOS Image Sensor with 20 ke-Full-Well Capacity in a Tap and 36 % Quantum Efficiency at 940 nm Wavelength

4. A 0.8 μm Nonacell for 108 Megapixels CMOS Image Sensor with FD-Shared Dual Conversion Gain and 18,000e- Full-Well Capacitance

5. 5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology

6. A 0.8 µm Smart Dual Conversion Gain Pixel for 64 Megapixels CMOS Image Sensor with 12k e- Full-Well Capacitance and Low Dark Noise

7. A 1/2.8-inch 24Mpixel CMOS image sensor with 0.9μm unit pixels separated by full-depth deep-trench isolation

8. 7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate

9. A 1/2.33-inch 14.6M 1.4μm-pixel backside-illuminated CMOS image sensor with floating diffusion boosting

10. Advanced image sensor technology for pixel scaling down toward 1.0µm (Invited)

11. 1/2-inch 7.2MPixel CMOS Image Sensor with 2.25/spl mu/m Pixels Using 4-Shared Pixel Structure for Pixel-Level Summation

12. High-density low-power-operating dram device adopting 6F/sup 2/ cell scheme with novel S-RCAT structure on 80nm feature size and beyond

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