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A 0.8 µm Smart Dual Conversion Gain Pixel for 64 Megapixels CMOS Image Sensor with 12k e- Full-Well Capacitance and Low Dark Noise

Authors :
Yongin Park
H.S. Jeong
Woong Joo
Dongyoung Jang
Jesuk Lee
Haewon Lee
Seungjoo Nah
Donghyuk Park
Seung-Wook Lee
Yun-Ki Lee
Mi Hye Kim
Yi-tae Kim
Sang-il Jung
Sungho Suh
Chang-Rok Moon
Bum-Suk Kim
Seungwon Cha
Hee-sang Kwon
Jinhwa Han
Source :
2019 IEEE International Electron Devices Meeting (IEDM).
Publication Year :
2019
Publisher :
IEEE, 2019.

Abstract

A 0.8 μm-pitch 64 megapixels ultrahighresolution CMOS image sensor has been demonstrated for mobile applications for the first time. Full-well capacity (FWC) of 6k e- was achieved in 0.8 μm pixels as the best in the world, and the advanced color filter (CF) isolation technology was introduced to overcome sensitivity degradation. Dual conversion gain (CG) technology was also first applied to mobile applications to improve the FWC performance of Tetracell up to 12k e-. In addition, highly refined deep trench isolation (DTI) and photodiode design significantly improved dark noise characteristics.

Details

Database :
OpenAIRE
Journal :
2019 IEEE International Electron Devices Meeting (IEDM)
Accession number :
edsair.doi...........4897b99caead3b6b00c7cf6861e5f5b2
Full Text :
https://doi.org/10.1109/iedm19573.2019.8993487