Search

Cette étude présente une réflexion sur l'habitation d'un lieu et la constitution d'un « Soi territorial », dans le contexte de la vie et du travail « paysan ». L'hypothèse est alors posée d'une possible « psychopathologie de la (dé-) territorialisation », selon laquelle un « non-lieu », générateur de non-sens, peut se trouver impliqué dans une dynamique suicidaire en lien spécifique avec la dimension territoriale du Soi et l'habitation impossible d'un lieu. Les aspects cliniques et psychopathologiques sont appréhendés dans la perspective du lien entre certains « paysans de tradition » et leur lieu de vie, au regard de l'empreinte réciproque entre psychisme et territoire. Cette réflexion exploratoire permet d'orienter des recherches cliniques auprès d'agriculteurs en souffrance en marge des « troubles psycho-sociaux » habituellement recensés. Les limitations et impasses induites par des processus dissociatifs, ou mélancoliques sont rapportés soit à une défaillance de la Présence, compromettant la construction d'un monde habitable, c'est-à-dire territorialisable, soit à l'hostilité d'un monde réfractaire à la dynamique d'un processus de territorialisation, et donc inapte à permettre d'y séjourner. Ces considérations ouvrent une perspective originale de recherches qualitatives visant à appréhender les rapports entre altération des assises territoriales du Soi et intentionnalité suicidaire. This study presents a reflection on the inhabitation of a place and the constitution of a territorial Self,' in the context of 'country' life and work. The hypothesis is then put forward of a possible 'psychopathology of (de-)territorialization,' according to which a 'non-place,' generator of meaninglessness, may be involved in a suicidal dynamics specifically linked to the territorial dimension of the Self and the impossible inhabitation of a place. The clinical and psychopathological aspects are examined from the perspective of the link between certain 'traditional farmers' and the place where they live, with regard to the reciprocal imprint between psyche and territory. This exploratory study will provide guidance for clinical research into the suffering of farmers who fall outside the scope of commonly identified 'psycho-social disorders.' The limitations and impasses induced by dissociative or melancholic processes are related either to a failure of Presence, compromising the construction of a habitable world, i.e. one that can be territorialized, or to the hostility of a world that is resistant to the dynamics of a territorialization process, and therefore unfit to allow us to dwell in it. These considerations open up an original perspective for qualitative research aimed at understanding the relationships between alteration of the territorial foundations of the Self and suicidal intentionality. [ABSTRACT FROM AUTHOR]

Hydrogen energy is gaining greater attention because of the energy crisis and CO2 emissions, and knock combustion has become the main obstacle to improving thermal efficiency and power performance of hydrogen engines, which is an important method of hydrogen energy application. In this paper, the knock characteristic parameters and the factors affecting knock tendency of a 2.0 L DI hydrogen engine are investigated experimentally. The results reveal the variation in knock intensity is not linear with the retarding of SOI, which is related to the cylinder mixture distribution. Furthermore, methods such as increasing injection pressures can be useful in reducing the knock intensity. Equivalence ratio has a greater impact on knock compared with other parameters. The conclusions can be used in the further exploration of the knock combustion mechanism in DI hydrogen engines. Effect of changes in parameters on knock intensity [Display omitted] • Combustion knock in DI hydrogen engines is different from PFI hydrogen engines. • Retarding of SOI leads to the nonlinear variation of detonation intensity. • Equivalence ratio has a greater effect on knock compared with other variables. [ABSTRACT FROM AUTHOR]

This study provides a comprehensive investigation on palladium (Pd) gate electrode-based silicon on insulator (SOI) junctionless field-effect transistor (JLFET) for hydrogen gas (H 2) sensing (Pd–SOI-JLFET). The device has a gate dielectric stack consisting of silicon dioxide (SiO 2) and hafnium dioxide (HfO 2). An extensive analysis was conducted to detect and identify the presence of hydrogen gas by examining several electrical characteristics such as drain current (I DS), transconductance (g m), output conductance (g d), energy band diagram (E), gate-to-source capacitance (C GS), and surface potential (Φ s). Furthermore, a comprehensive investigation was conducted to examine the impact of the presence of H 2 gas and variations in temperature on important parameters associated with the short channel effects (SCEs) including off-state current (I OFF), on-state current (I ON), subthreshold swing (SS) and threshold voltage (V th). In addition, the sensitivity analysis of the off-state current (I OFF) by considering process variation effect has been done. Sensitivity is also calculated at various temperatures for the detection of hydrogen gas molecule. At the temperature of 300K, the sensitivity values were obtained as 1.50083, 3.21754, 27.71483, 152.39617 and 2052.8 for pressure values 10−14 Torr, 10−13 Torr, 10−12 Torr, 10−11 Torr and 10−10 Torr, respectively. This analysis provides a thorough examination of the performance and efficacy of the Pd–SOI-JLFET hydrogen gas sensor highlighting its potential for a wide range of hydrogen sensing applications. [ABSTRACT FROM AUTHOR]

The junctionless EZ-FET is a simple FDSOI-like device that requires only two lithography levels and standard processing steps. With its simplified architecture and fabrication flow, and using undoped source and drain terminals, the device allows for a fast electrical evaluation of semiconductor films on insulators (SOI) and gate stacks. This paper describes an electrical model that reproduces the peculiar transfer characteristics of a junctionless EZ-FET. The model is then simplified to develop a pragmatic parameter extraction methodology. This methodology is experimentally validated and provides the electrical properties of SOI films (mobility, threshold voltage) for both electrons and holes. [ABSTRACT FROM AUTHOR]

Cette contribution théorique discute de l'intégration d'un « soi territorial » aux côtés des soi minimal et narratif classiquement décrits par la phénoménologie contemporaine et utilisés par la psychopathologie phénoménologique. Nous partons de l'expérience schizophrénique et des outils de compréhension de celle-ci pour mettre en évidence certaines limitations s'inscrivant autour du recours au discours dans le dispositif clinique pour évoquer des phénomènes a priori pré-langagiers. Ce cheminement théorique, qui a pour incidence de rendre nécessaire une ouverture à l'observation clinique et à l'intersubjectivité, conduit à des implications nosographiques et thérapeutiques qui nous semblent utiles à la perspective phénoménologique. D'un point de vue nosographique, nous discutons des recouvrements (non systématiques) entre expérience schizophrénique et expérience psychotique alors que, d'un point de vue thérapeutique, la proposition du soi territorial permet d'insister sur le fait que la relation clinique se caractérise, tant par une analyse de l'expérience et un discours à son propos, que par une pratique et un vécu expérientiel conjoints nécessitant le partage d'un espace commun. La proposition théorique du « soi territorial » se révèle féconde et heuristique pour approfondir les débats nosographiques dans le domaine de la psychose, et pour contribuer à une réflexion sur la pratique de la psychothérapie. This theoretical paper discusses the integration of a "territorial self" alongside the minimal and narrative selves most commonly described by contemporary phenomenology and used by phenomenological psychopathology. We start from the schizophrenic experience and the tools for understanding it, in order to highlight some limitations in the use of vocal communication within the clinical system to evoke phenomena that are a priori pre-linguistic. This theoretical path, which requires an openness to clinical observation and intersubjectivity, leads to nosographic and therapeutic implications that seem useful to us from a phenomenological perspective. From a nosographic standpoint, we discuss the (non-systematic) crossovers between the schizophrenic experience and the psychotic experience; whereas, from a therapeutic standpoint, the proposal of the territorial self allows us to insist on the fact that the clinical relationship is characterized as much by an analysis of experience and a discussion about it as it is by a joint practice and an experiential experience requiring a common ground. The "territorial self" proves to be a fruitful and heuristic theoretical proposal, enriching nosographic debates in the field of psychosis, and contributing to a reflection on the practice of psychotherapy. [ABSTRACT FROM AUTHOR]

Il est courant, dans les recherches en sciences humaines, sociales et politiques, de qualifier l'ère actuelle par le signe de « post-vérité ». Considérant la discontinuité entre discours et vérité aujourd'hui, cet article vise à identifier sous quels régimes de vérité la force du vrai est en déclin et à souligner certains apports d'auteurs de la tradition psychanalytique pour réfléchir à l'engagement des sujets dans les discours de vérité. Dans une perspective historique, nous recourrons à l'analyse de Foucault pour identifier, dans la notion de « force du vrai », une conception de la vérité située entre savoir et pouvoir. Ensuite, sont présentées, sur la base des propositions théoriques de Freud et de Deleuze et Guattari, (1) une lecture portant sur l'actuel déclin de la vérité, ainsi que, à partir de la contribution de Lacan, (2) des possibilités de relever les dimensions de l'altérité et des limites du discursif dans l'expérience de la vérité. Compte tenu de la faillite des régimes modernes de vérité basés sur le modèle de la connaissance et le détachement des subjectivités de l'indexation de leur discours sur le plan de la vérité, nous identifions l'ascension d'un narcissisme des petites différences et d'une modalité de fascisme qui soumet les différences à un principe d'identité. Au vu de ce scénario, nous constatons, dans l'approche psychanalytique, combien l'autre occupe une place incontournable comme différence dans l'expérience de la vérité. Cette perspective récupère une autre tradition de la vérité, qui, associée à un travail de soi sur soi-même, implique la possibilité de transformation du sujet. En problématisant l'expérience de la vérité qui repose sur la connaissance, étant déterminée par une tradition métaphysique de l'âme (psykhé), c'est-à-dire, en définissant l'ontologie comme une manière d'être du sujet, nous soulignons d'autres possibilités de subjectivation de la vérité basées sur la dimension de la vie (bíos) et de l'existence. En concevant le dire vrai dans la psychanalyse à partir de la lecture de Lacan, nous nous demandons dans quelle mesure cette perspective réintroduit aujourd'hui la question de la force du vrai dans le domaine d'une réflexion éthique. En favorisant le retour de la vérité par le biais d'une clinique du sujet, la contribution de Lacan à la psychanalyse permet d'établir une critique des formes de subjectivation aujourd'hui fondées sur le principe de l'identité, et de redéfinir la place de l'altérité dans les discours de vérité. La détermination des limites du dire dans l'appréhension du réel ne donne pas tellement lieu à un renoncement à l'expérience de la vérité, puisque, outre qu'elle est inscrite dans la tradition de la connaissance, celle-ci peut se situer dans une démarche esthétique, dans laquelle la force du vrai engendre une stylistique de l'existence. It has become a commonplace in research in human, social, and political sciences to refer to the current era as being one of "post-truth". Considering the discontinuity between discourse and truth today, this article aims to identify under which regimes the force of truth is in decline and to indicate some contributions of authors from the psychoanalytic tradition, in order to reflect on the engagement of subjects in discourses of truth. From a historical perspective, we refer to Foucault's analysis to identify, in the notion of "force of truth", a conception of truth established between knowing and power. Then, we propose, based on the theoretical propositions of Freud and of Deleuze and Guattari, (1) an interpretation of the current decline of the truth, and, from Lacan's contributions; (2) possibilities for emphasising the dimensions of otherness and of the limits of the discursive in the experience of truth. Given the failure of modern regimes of truth based on the knowledge model and the detachment of subjectivities from the discourses of truth, we identify the rise of a narcissism of small differences and a modality of fascism that submits differences to a principle of identity. Considering this scenario, the psychoanalytic approach demonstrates how powerfully the other occupies an unavoidable place of difference in the experience of truth. This perspective recovers another tradition of truth, which, associated with the subject's work on her/himself, implies the possibility of subjective transformation. By problematising the experience of truth based on knowledge and determined by a metaphysical tradition of the soul (psykhé), that is, by defining ontology as the subject's way of being, we highlight other possibilities of the subjectivation of truth based on the dimension of life (bíos) and of existence. By conceiving of telling the truth in psychoanalysis according to Lacan's reading, we question how this perspective reintroduces the question of the force of truth in the field of ethical discussion. By promoting the return of truth through a clinical investigation of the subject, Lacan's contribution to psychoanalysis allows us to establish a critique of contemporary forms of subjectivation based on the principle of identity, and to redefine the place of otherness in discourses of truth. The determination of the limits of speech in the apprehension of the real does not give rise to a renunciation of the experience of truth, since, besides being inscribed in the tradition of knowledge, it can be situated in an aesthetic approach, in which the force of truth engenders stylistics of existence. [ABSTRACT FROM AUTHOR]

• The gate-induced drain leakage (GIDL) in stacked nanowire transistors for temperatures of operation between 300 K and 580 K is experimentally assessed for devices with different channel lengths and fin widths. • The temperature rise increases the current due to GIDL and its dependence on the device width. • For a fixed negative gate voltage the channel length reduction increases the GIDL current for nanowires independent of the temperature, except for devices suffering from threshold voltage roll-off due to short-channel effect. • Three-dimensional TCAD simulations showed that drain leakage is mainly composed of band-to-band tunneling rather than junction leakage, even at high temperatures. • The band-to-band generation rate intensity is larger in the bottom nanowire, with Ω-gate architecture than in the top GAA nanowire. • Band-to-band generation becomes higher as length is reduced and fin width is increased and is larger in the drain extension and gate overlap regions. • The temperature rise changes valence and conduction energy levels causing the reduction of the lateral distance between the two levels, favoring the transversal band-to-band tunneling. This paper presents a comprehensive experimental analysis of the gate-induced drain leakage (GIDL) in two-level stacked nanowire SOI nMOSFETs for operating temperatures between 300 K and 580 K. Devices with different channel lengths and fin widths were measured. The results show that temperature rise increases the GIDL current for stacked nanowire transistors and its dependence on nanowire width. For a fixed gate voltage, the channel length reduction increases the GIDL current except in the presence of short-channel length. Three-dimensional TCAD simulations were performed, and the band-to-band generation was extracted for devices with different channel lengths, widths, and temperatures. The temperature rise increases valence and conduction energy levels, being more pronounced in the first, which causes the reduction of the lateral distance between the two levels, finally favoring the transversal band-to-band tunneling. [ABSTRACT FROM AUTHOR]

The thermo-optic phase shifter (TOPS) using metal heaters is widely used in various integrated photonics devices for its advantages of simple fabrication, low loss, and low cost. While folded waveguides are commonly employed to enhance the performance of these phase shifters, a comprehensive understanding of how varying the number of folds and the dimensions of heaters impact the device's performance is still lacking. In this paper, we conducted a comprehensive comparison and optimization into the impact of the number of folded waveguides and the width of heater on the performance of folded waveguide thermo-optic phase shifter (FW-TOPS) on silicon nitride (SiN) and silicon-on-insulator (SOI) platforms using the finite element method (FEM). The research has revealed that both the number of waveguides and the width of the heater exert a substantial influence on the performance of FW-TOPS, particularly on platforms with low refractive index contrast. In cases where the number of waveguides is the same, and the width of the heater electrode is identical, the comparison indicates that on the SiN platform, the FW-TOPS in waveguide Combination 2 (waveguide 1 is a single-mode waveguide, while waveguide 2 is a multi-mode waveguide) exhibits superior overall performance, compared to waveguide Combination 1 (both waveguide 1 and waveguide 2 are single-mode waveguides). However, on the SOI platform, FW-TOPS with waveguide Combination 1 demonstrates better overall performance compared to waveguide Combination 2. Furthermore, the simulation results indicate that although air trenches can significantly reduce the power consumption of the FW-TOPS, they also lead to a substantial decrease in the response speed. Therefore, on the 300 nm-thick SiN and 220 nm-thick SOI platforms, air trenches do not effectively enhance the overall performance of the FW-TOPS. • Both the number of waveguides and the width of the heater exert a substantial influence. • SiN and SOI platforms exhibit opposite behaviors. • Air trench has little effect on the improvement of the overall performance. [ABSTRACT FROM AUTHOR]

The impacts of line edge roughness (LER) and temperature effect on single event transient (SET) in Silicon-On-Insulator (SOI) FinFET at 14 nm technology node are studied. Based on the calibrated model of the rectangle FinFET, all of possible fin structures induced by LER in the vertical direction are proposed by considering the correlation between the line edges. When an energetic particle hits, due to the corporate effects of the gate control capability from the equivalent gate width and the current density from the cross section, thin fin shape represents more immunity to SET with the relative decrement in current peak, collected charge, deposited charge, pulse width and bipolar amplification coefficient by 23.78 %, 31.61 %, 19.16 %, 23.77 % and 15.40 %, respectively. However, the SET responses of big bottom and fat fin structures indicate that they are more sensitive to SET. Because of the driven current increase induced by the inversion of the temperature effect in FinFET, as the environment temperature increases, the SET responses of all of fin shapes decrease and their relative decrements are close. When the temperature increases from 258K to 398K, the average relative decrements in current peak, and collected charge are 24.22 %, 20.90 %, respectively. [ABSTRACT FROM AUTHOR]

Rainfall erosivity is an important indicator that can be used to measure the ability of rain to cause erosion and is connected with the El Niño Southern Oscillation (ENSO) through the transmission of rainfall. This work aimed to explore the characteristics of rainfall erosivity in Guizhou Province and determine its correlation with ENSO. Rainfall erosivity was calculated from daily rainfall data from January 1960 to December 2017. The analyses were conducted using a daily rainfall erosivity model, inverse distance weighted (IDW) interpolation, linear regression analysis, Mann-Kendall test and correlation analysis. The long-term (1960–2017) average rainfall erosivity was 5825.60 MJ·mm·ha−1·h−1 in the study area and showed a high temporal variability with the estimates from the linear trend line ranging from −449.5 MJ·mm·ha−1·h−1/10a to 496.8 MJ·mm·ha−1·h−1/10a. According to rainfall and erosive rainfall, an uneven spatial distribution of rainfall erosivity was observed with an increasing trend from south to north. Temporal distribution of monthly rainfall erosivity was consistent with that of seasonal rainfall erosivity, and concentrated in the summer months (June to August). As the representation indices of ENSO phenomena, the Oceanic Niño Index (ONI), Southern Oscillation Index (SOI) and multivariate ENSO Index (MEI) were selected for correlation analysis with rainfall erosivity. During El Niño events, the ONI, SOI and MEI showed significant correlations (>95% confidence level) with rainfall erosivity, while during La Niña events, only the ONI and MEI were significantly correlated with rainfall erosivity, but no significant correlation was detected during the neutral period or for the entire study period. The degree of rainfall erosion is proportional to the ENSO duration; the longer the ENSO duration, the greater the rainfall erosivity. These findings could help predict soil erosion and be used to develop further adaptation measures to prevent water and soil loss. Unlabelled Image • Rainfall erosivity changed over a high spatiotemporal variability over the entire period. • The decreasing trend of rainfall erosivity was more significant than the increasing trend. • The relationship between rainfall erosivity and ONI, SOI, and MEI was clear during El Niño and La Niña time periods. • The degree of rainfall erosivity is proportional to the duration of ENSO. [ABSTRACT FROM AUTHOR]

• A crossbar array of silicon nitride resistive memories was fabricated on SOI. • Multi-Level-Cell capabilities were demonstrated through DC measurements and model. • A comprehensive analysis of the MRL gates' design and optimizations were done. In this work, the fabrication of crossbar arrays of silicon nitride resistive memories on silicon-on-insulator substrate and their utilization to realize multi-rationed logic circuits are presented. Typical electrical characterization of the memristors revealed their ability of multi-state operation by the presence of 12 well separated resistance levels. Through a dedicated modeling and fitting procedure of these levels, a reconfigurable logic based on memristor rationed logic scheme is designed and a crossbar integration methodology was proposed. Finally, several circuitry aspects were simulated in SPICE with a silicon nitride SOI crossbar array calibrated model and power optimization prospects were discussed. [ABSTRACT FROM AUTHOR]

This paper discusses the impact of both contact and channel resistance on capacitance and conductance characteristics measured with pseudo-MOSFET method by analyzing the impedance and admittance in frequency domain. We clarify the mechanisms affecting the ac response of pseudo-MOSFET structure for SOI wafer with thin SOI film by using simple series and parallel circuits composed of resistance and capacitance. Our measurement results show the gate bias range where the influence of the contact resistance becomes dominant in measurements with single and multiple probes. The degradation of the capacitance measured at high frequency is also analyzed by constructing an equivalent circuit, which detach the influence of the contact and channel resistances quantitatively. The necessity to carefully account for the influence of the contact resistance in pseudo-MOS method is clarified. [ABSTRACT FROM AUTHOR]

We propose three innovative SOI Tunnel FET architectures to solve the recurrent issue of low I ON and degraded subthreshold slope measured on TFETs. These are evaluated and compared with a standard TFET structure (with lateral tunneling) using the Sentaurus TCAD tool. Extending the source (anode) at the bottom of the body region generates vertical band-to-band tunneling. Moreover, reducing the vertical distance between the extension and the gate oxide (L rt) yields a very steep slope and higher I ON compared to a device with only lateral tunneling, but only for gate lengths longer than 100 nm. Using an ultrahigh boron dopant concentration (1021 cm−3) thin layer at the bottom for extremely small body thickness (T Si < 7 nm), increases I ON even for small gate lengths (L G < 100 nm). The implementation of an embedded tip in the source enhances the maximum electric field at the source/channel junction, but the impact on the performance is limited because the tunneling area is not increased. Therefore, this architecture provides a performance similar to a standard TFET. TCAD simulations using SiGe with different germanium concentrations (30% and 50%) and pure germanium, instead of silicon, show an increase of the interband tunneling current when using an ultrahigh dopant concentration thin boron layer for small gate lengths (L G < 50 nm). The reduction of the tunneling current using a relatively thick channel (11–7 nm) can be compensated by using a higher germanium concentration to reduce the energy bandgap. However, this will increase the density of defects causing a TAT tunneling instead of interband tunneling, jeopardizing the possibility of achieving a subthreshold swing below 60 mV/dec. [ABSTRACT FROM AUTHOR]

We propose for the first time a method based on C-V measurement to extract the bridge doping profile which governs the operation and performance of A2RAM capacitorless memory cell. Assessed with TCAD simulation and simple extraction model adapted from bulk devices, this technique is validated with experimental data. [ABSTRACT FROM AUTHOR]

• Logic NOT and AND gates with a footprint of 1.2 × 1.2 μm2 is designed. • The respond time of our devices is less than 0.25 ps. • The devices keep functional when pixel side length varies from 112 to 125 nm. • Both gates have good tolerance for Input phase difference. We have designed high-speed ultra-compact all-optical NOT and AND gates operating at 1550 nm on silicon-on-insulator (SOI) by a multi-objetice particle swarm optimized inverse-design method. The two gates have a similar four-port structure based on an extremely small area of 1. 2 × 1. 2 µm2. The ultra-small size of device leads to a short respond time less than 0.25 ps. Benefiting from the global optimization of our inverse-design method, our devices have a good tolerance on phase changes of input light. The not gate could keep working while the phase difference of input ranges from 0 to 0.3 π. The situation for AND gate is −0.25 to 0.75 π. Also the maximum contrast ratio is 7.16 dB for the NOT gate and 3.98 for the AND gate, respectively. Moreover, we demonstrate that the design method could have tolerance for small changes in device geometry, which means that our logic gates could remain functional while the pixel side length ranges from 112 to 125 nm. The tiny size, fast response and high robustness make our devices promising for future photonic-integrated circuits. [ABSTRACT FROM AUTHOR]

Abstract We are developing a new high-speed readout system for silicon on insulator (SOI) pixel detectors. The SOI detector is a monolithic radiation imaging detector based on a 0.2 μ m FD-SOI CMOS process. Previously, we used a Xilinx Virtex-4/5 FPGA readout board for the SOI detector and developed many facilities for this board. However, the Virtex-4/5 FPGA is now obsolete and does not have sufficiently high performance for recent experiments that require more than 1-kHz high-speed imaging with a large number of pixels. Thus, we started to develop a new high-speed readout system using the KC705, which is the evaluation board for the Xilinx Kintex-7 FPGA. We developed a new data acquisition structure that has backward compatibility with the previous environment on this board and implements several functions for practical purposes such as micro Computed Tomography. The transfer speed achieved by the new system is 95.3 fps for a 426k pixel detector in continuous data-taking mode, and 762.5 fps in maximum-speed mode. The details of the new readout system are presented. Highlights • New high-speed DAQ system using the KC705 for SOIPIX detectors is under development. • New DAQ system keeps backward compatibility with SEABAS2 current DAQ system. • New DAQ system is using new FPGA and DDR3 memory to increase the performance. • Transfer speed is 95.3 fps for a 426k pixel detector, in continuous data-taking mode. • Transfer speed is 762.5 fps for a 426k pixel detector, in maximum-speed mode. [ABSTRACT FROM AUTHOR]

Abstract In low earth orbit, there are many cosmic rays composed primarily of high energy protons. These cosmic rays cause surface and bulk radiation effects, resulting in degradation of detector performance. Quantitative evaluation of radiation hardness is essential in development of X-ray detectors for astronomical satellites. We performed proton irradiation experiments on newly developed X-ray detectors called XRPIX based on silicon-on-insulator technology at HIMAC in National Institute of Radiological Sciences. We irradiated 6 MeV protons with a total dose of 0.5 krad, equivalent to 6 years irradiation in orbit. As a result, the gain increases by 0.2% and the energy resolution degrades by 0.5%. Finally we irradiated protons up to 20 krad and found that detector performance degraded significantly at 5 krad. With 5 krad irradiation corresponding to 60 years in orbit, the gain increases by 0.7% and the energy resolution worsens by 10%. By decomposing into noise components, we found that the increase of the circuit noise is dominant in the degradation of the energy resolution. [ABSTRACT FROM AUTHOR]

Abstract A 6 × 6 silicon photomultiplier (SiPM) array aimed at one-to-one coupling to a finely separated scintillator array was fabricated and characterized. All SiPMs were formed in the bulk substrate layer of a silicon on insulator (SOI) wafer for enabling future SiPMs which consists of 3-D integrated electronics without mechanical bonding. Each channel had a size of 250 × 250 μ m 2 and was arranged for satisfying the counting-rate requirements of over 2 Mcps/mm2 in energy-resolvable X-ray photon counting computed tomography. To minimize the cost and complexity of the system's back-end architecture and data acquisition, a novel two-dimensional coordinate readout was designed in anode terminals which contributes to the number of readout wires reduction without the position resolution degradation. As a feasibility study, the basic performance of a prototype analog SiPM array using the commercial SOI process was fabricated and characterized. Several features, such as a fast recovery time under 20 ns and a gain of 1 × 1 0 5 were within requirements to realize photon counting CT. Highlights • 36-channel 250 μ m pitch SiPM array using Silicon on Insulator process was fabricated and characterized. • Measurement results showed several useful features such as a recovery time under 20 ns and a gain of 1 0 5 for future photon counting CT. • A novel signal multiplexing design at the microcell level was also described and its feasibility was inspected using infrared charge coupled device camera. [ABSTRACT FROM AUTHOR]

Abstract We report on total ionizing dose effects on the X-ray SOI pixel sensor, XRPIX. XRPIX has been developed as an imaging spectrometer for X-ray astronomical use in space. Front- and back-illuminated (FI and BI) devices were irradiated with hard X-rays from an X-ray tube operated at 30 kV with a Molybdenum target. We found that the degradation rate of the readout noise of the BI device was approximately three times slower than that of the FI device as a function of radiation exposure. Those of both type of devices, however, were virtually identical when the readout noise was evaluated as a function of the absorbed dose at the buried oxide layer, D BOX. The pedestal and analog-to-digital conversion gain also displayed similar tendencies. These results demonstrate that BI type devices have a higher radiation tolerance as a focal plane sensor of an X-ray mirror and the radiation tolerance of XRPIX devices is governed by D BOX. The readout noise was stable up to about 1 krad in D BOX , increased by about 10% at 10 krad in D BOX , and continued to increase under further irradiation. If we employ an X-ray mirror with a half-power diameter of 10 arcsec and a focal length of 10 m, 10 krad in D BOX , a reasonable threshold of radiation tolerance in this experiment, is equivalent to more than three years in orbit, typically required of space-borne sensors. Highlights • Total ionizing dose effects on the SOI pixel sensor, XRPIX, were studied. • Front-and back-illuminated (FI and BI) devices were irradiated with hard X-rays. • BI type devices have a higher radiation tolerance. • XRPIX's radiation tolerance is governed by the absorbed dose at the BOX layer. • XRPIX has a lifetime in orbit long enough for application as a space-borne sensor. [ABSTRACT FROM AUTHOR]

Abstract An application of a modern noble pixel detector, XRPIX series, for solar KSVZ axion search experiment is being developed. A low radioactive background is necessary in the detector volume for the axion search. We surveyed the radioactivity of all peripheral components mounted on the detector using an HPGe detector. The results are used as an input for a GEANT4 Monte Carlo simulation to study the background in the experiment. This paper describes the expected background and the simulated sensitivity of stacked XRPIX detector currently under development. [ABSTRACT FROM AUTHOR]

Abstract We have been developing event-driven SOI Pixel Detectors, named "XRPIX" (X-ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical satellite with wide band coverage from 0.5 keV to 40 keV. XRPIX has event trigger output function at each pixel to acquire a good time resolution of a few μ s and has Correlated Double Sampling function to reduce electric noises. The good time resolution enables the XRPIX to reduce Non X-ray Background in the high energy band above 10 keV drastically by using anti-coincidence technique with active shield counters surrounding XRPIX. In order to increase the soft X-ray sensitivity, it is necessary to make the dead layer on the X-ray incident surface as thin as possible. Since XRPIX1b, which is a device at the initial stage of development, is a front-illuminated (FI) type of XRPIX, low energy X-ray photons are absorbed in the 8 μ m thick circuit layer, lowering the sensitivity in the soft X-ray band. Therefore, we developed a back-illuminated (BI) device XRPIX2b, and confirmed high detection efficiency down to 2.6 keV, below which the efficiency is affected by the readout noise. In order to further improve the detection efficiency in the soft X-ray band, we developed a back-illuminated device XRPIX3b with lower readout noise. In this work, we irradiated 2–5 keV X-ray beam collimated to 4 μ m ϕ to the sensor layer side of the XRPIX3b at 6 μ m pitch. In this paper, we reported the uniformity of the relative detection efficiency, gain and energy resolution in the subpixel level for the first time. We also confirmed that the variation in the relative detection efficiency at the subpixel level reported by Matsumura (2015) has improved. [ABSTRACT FROM AUTHOR]

Abstract In this paper, we aim to design an innovative parking space searching space occupancy indicator (SOI) system. Searching for a parking space is a common global problem that needs urgent solutions. The proposed mechanism uses taxis, public vehicles (PVs), and on-street parked vehicles to sense parking spaces and transmits sensed information to nearby road side unit (RSU) hotspots. The transmitted data include the availability of parking spaces and their location and direction. We use a cellular automata (CA) model and small world mechanism to achieve on-street parking space searching and recommendation. The current study evaluates the performance of the approach by conducting computer simulations. Simulation results reveal the strengths of the proposed optimized and parking space searching SOI system in terms of reduces search time, and increases success rate of tracking in VANETs. [ABSTRACT FROM AUTHOR]

Résumé Objectifs La notion de soi reste difficile à définir. L'objectif de cet article est de chercher à mieux comprendre ce qu'est le soi en retraçant son évolution depuis les origines, et en se focalisant sur la distinction soi/non-soi. L'idée étant que la distinction soi/non-soi est une constante primaire et fondamentale dans la construction des organismes. Méthodes On retrace rapidement l'évolution de la distinction soi/non-soi depuis les bactéries jusqu'à l'être humain dans les deux grands systèmes où l'existence d'un soi apparaît essentielle, le système immunitaire et le cerveau. Résultats L'organisation du soi immunitaire est encore largement incomprise. Il apparaît que le soi doit être appréhendé à différents niveaux, celui du stockage des mémoires et celui de leur supervision. Dans le cerveau, il est aussi nécessaire de distinguer un soi préconscient et un soi en action que l'on appelle le soi/être. Pour illustrer la notion de soi/être , on analyse ce qu'il pourrait être dans la compulsion à boire chez les personnes dépendantes à l'alcool. Discussion La construction du soi paraît se faire en utilisant des mécanismes sensoriels de transformation du non-soi en soi, et des mécanismes exécutifs d'exclusion du non-soi. Le premier mécanisme construit un système de représentations du non-soi qui permet d'être en permanence prêt à être confronté à l'environnement. Le second mécanisme repose sur la capacité à faire des choix, sur le modèle « ceci c'est moi, cela ce n'est pas moi » ; dans le cerveau, il pourrait consister en un processus exécutif utilisant le soi/être , qui est cet instant où un objet est choisi et occupe seul l'espace du soi en acte ; on propose que le support biologique de ce choix en acte – le soi/être – est le salience network. Conclusion L'étude de l'évolution du soi depuis les origines, en se focalisant sur la distinction soi/non-soi, pourrait être un moyen de mieux comprendre la nature du soi. Abstract Objectives The notion of self remains difficult to define. The objective of the present paper is to try to more fully understand what the self is, by tracing its evolution from the origins, and by focusing on the distinction between self and non-self, the guiding idea being that the self/non-self distinction is a primary and fundamental constant in the construction of organisms. Methods We rapidly describe the evolution of the self/non-self distinction, from bacteria to humans, in the two main systems where the self is essential, namely the immune system and the brain. Results The organization of the immune self is still poorly understood. It seems that the self needs to be considered on two levels, that of memory storage and that of memory supervision. In the brain, we also need to distinguish a preconscious self from an acting self that can be called the self-being. To illustrate the notion de self-being , we analyze what it could be in the case of the compulsion to dink in alcoholics. Discussion It seems that the self builds itself using sensory mechanisms that convert non-self into self, and executive mechanisms that exclude the non-self. The conversion of the non-self into self builds a system of representations of non-self that prepares the subject to confront the environment; the executive mechanisms rest on the ability to make choices, on a "this is me, that is not me" model; in the brain, this could be achieved by an executive process using the self-being , which is the moment when an object is chosen occupies the whole space of the acting self; it is suggested that the biological underpinning of this enacted choice – the self-being – is the salience network. Conclusion The study of the evolution of the self from the origins, focusing on the self/non-self distinction, could be a useful tool to more fully understand the nature of the self. [ABSTRACT FROM AUTHOR]

Résumé Objectif L'ipséité (autre nom du Soi) est un concept central et précis pour la psychopathologie des psychoses, des névroses et personnalités pathologiques. Ce travail veut donner un statut à ce concept et montrer comment il sert à comprendre les troubles psychotiques, les troubles graves de la personnalité et les grandes crises de l'existence. Méthode Esquisser une généalogie du concept, proposer une conception dynamique de l'identité humaine (identité ipsé ou idem) et montrer ses altérations possibles dans les psychoses. Différencier les niveaux d'altération de l'identité humaine et comment les symptômes psychiatriques peuvent se comprendre comme des tentatives de recomposition de cette ipséité altérée. Résultats Notre travail converge vers un paradigme d'une grande importance : les psychoses peuvent se comprendre comme des formes d'altération de la structure d'ipséité. Il envisage un certain nombre de grandes situations cliniques pour illustrer la portée de ce paradigme. Discussion Ce paradigme montre sa pertinence pour un enrichissement d'une réflexion clinique incluant des repères et des fondements anthropologiques et pas seulement psychologiques. Il n'exclut aucune autre lecture de la psychopathologie, de l'apport des neurosciences et de la réflexion éthique. Conclusion Le Soi s'avère comme un incontournable de la psychiatrie. Que nous restions dans la clinique générale des psychoses, des troubles graves de la personnalité ou du traumatisme, que nous employons les références psychanalytiques ou de thérapies familiales, le Soi devient l'instance de référence par laquelle une certaine forme de subjectivité redevient pensable. Abstract Objectives Ipseity (another name for the Self) is a central, precise concept in the psychopathology of psychoses, neuroses and pathological personalities. This work aims to give a status to this concept, and show how it serves to understand psychotic disorders, serious personality disorders and major life crises. Methodology The appeoach involves an overview of the genealogy of the concept, and proposes a dynamic conception of the human identity (ipse or idem) so as to illustrate the alterations that can occur in psychoses. We distinguish different levels of alteration of human identity and show how psychiatric symptoms can be understood as attempts to recompose this altered ipseity. Results Our work converges towards a paradigm of great importance: psychoses can be understood as forms of alteration of the ipseity structure. It considers a number of emblematic clinical situations to illustrate the scope of this paradigm. Discussion This paradigm proves relevant for an enrichment of clinical reflection that integrates not only psychological references but also anthropological references. It does not exclude other readings of psychopathology, the contribution of neuroscience or ethical considerations. Conclusion The Self appears as essential to psychiatry. Whether in the general clinical management of psychoses, serious personality disorders and trauma, or in the use of psychoanalytic approaches or family therapies, the Self forms a central reference enabling a certain form of subjectivity to become thinkable again. [ABSTRACT FROM AUTHOR]

Résumé Objectifs Cet article évalue comment la naissance de la nanopsychiatrie repose sur de nouvelles techniques et paradigmes qui viennent remettre en cause la différence entre le soi et le non-soi, jusque-là critère de l'identité personnelle et de la conscience de soi. Méthodes L'article est structuré en quatre parties : 1. Poser le problème du soi et du non-soi dans le nouveau contexte nanotechnologique ; 2. Les méthodologies actuelle en nanotechnologie ; 3. Les résultats en termes d'augmentation capacitaire 4. La discussion sur la production d'un insoi nanopsychiatrique. Résultats Les résultats exposent les avancées sur le lien entre troubles psychiatriques et nanotechnologies. Discussion La discussion porte sur la portée de l'insoi nanopsychiatrique et les modifications dans la conscience du soi face à des productions émersives et inédites dans son propre corps vivant. Conclusion La conclusion précise les limites de l'insoi nanopsychiatrique. Abstract Aims This article assesses how the birth of nanopsychiatry is based on new techniques and paradigms that challenge the difference between self and non-self, hitherto the criterion of personal identity and self-awareness. Methods The article is structured in four parts: 1. Posing the problem of self and non-self in the new nanotechnological context; 2. Current methodologies in nanotechnology; 3. Results in terms of capacity augmentation 4. Discussion of the production of a nanopsychiatric "insoi". Results The results show progress on the link between psychiatric disorders and nanotechnologies. Discussion The discussion focuses on the scope of the nanopsychiatric "insoi" and on changes in self-awareness in the face of emergent and novel productions in one's own living body. Conclusion The conclusion plots out the limits of the nanopsychiatric "insoi". [ABSTRACT FROM AUTHOR]

Abstract CEA has a long history of customizing optoelectronic components for space and astronomy applications. With this expertise we are undertaking a development of cooled silicon bolometers for millimeter (mm) wave polarization detection, typically at λ = 1. 5 mm, in order to address the next generation of space astronomy missions. This work presents the early results on the design and fabrication of an innovative pixel operating at very low temperature between 50 and 100 mK. This pixel is using a Ti/TiN thin film absorber and an ion-implanted silicon thermometer which exhibits a very small heat capacity and a very low 1/f noise at low temperature. This sensor is implemented on a standard SOI substrate. We performed a 2D process simulation of the silicon thermometer and an electromagnetic simulation of the pixel absorption to obtain good performances at low temperature. We present R(T) electrical characterizations of simplified silicon thermometers at low temperature showing a variable range hopping (VRH) model dominating effect. The model prediction shows a good agreement with experimental results. [ABSTRACT FROM AUTHOR]

Highlights • A methodology is proposed to separate mobility of each level of stacked NW structure. • Lower low filed mobility is obtained for top GAA level comparing to Ω bottom NW. • Mobility varies with VB due to holes concentration reduction and displacement. • A linear behavior between mobility and back bias has been evidenced. • Mobility dependence on temperature remarkably varies with VB for Ω-NWs. Abstract This work proposes a new method for dissociating both channel conductions of two levels vertically stacked inversion mode nanowires (NWs) composed by a Gate-All-Around (GAA) level on top of an Ω-gate level. The proposed methodology is based on experimental measurements of the total drain current (I DS) varying the back gate bias (V B), aiming the extraction of carriers’ mobility of each level separately. The methodology consists of three main steps and accounts for V B influence on mobility. The behavior of non-stacked Ω-gate NWs are also discussed varying V B through experimental measurements and tridimensional numerical simulations in order to sustain proposed expressions of mobility dependence on V B for the bottom level of the stacked structure. Lower mobility was obtained for GAA in comparison to Ω-gate. The procedure was validated for a wide range of V B and up to 150 °C. Similar temperature dependence of mobility was observed for both Ω-gate and GAA levels. [ABSTRACT FROM AUTHOR]

• This work presents experimental results of the series resistance variability in junctionless and inversion-mode nanowire transistors. • Due to series resistance, drain-current variability is larger than Y-function variability both in junctionless and inversion mode nanowires. • The influence of source-drain series resistance is higher on drain-current variability for junctionless than inversion mode, presenting an increase of up to 50% depending on the width and channel length. • Results suggest that series resistance variation impacts junctionless more than inversion mode nanowire transistors. This work analyzes the influence of source-drain series resistance variability over the drain current in junctionless and inversion mode nanowire transistors. A comparison between drain current and Y-function variability is presented using experimental data of nanowires with different widths and channel lengths. The source-drain series resistance variability is also presented. The results indicates that source-drain series resistance influence is higher on drain current variability for junctionless than inversion mode nanowire transistors. [ABSTRACT FROM AUTHOR]

This paper presents the feasibility study of a novel 3D mesa bridge microdosimeter and its use for BNCT dosimetry. The performance of the microdosimeter was studied using Monte Carlo simulation. The clinical BNCT field at Kyoto University Reactor (KUR) using both thermal and epithermal irradiation modes were used in this study. Results show that this microdosimeter can be utilised as an effective tool to measure microdosimetric spectrum in the BNCT field and experimental validation will follow once KUR is operational. [ABSTRACT FROM AUTHOR]

Silicon-based solid state plasma antennas were characterized by its wide radiation range, good stealth characteristic, and dynamic reconfigurability, which have broad application prospects in the future. In this paper, investigations of surface PiN diodes developed for silicon-based reconfigurable holographic antennas have been demonstrated for using millimeter-wave communication systems. The SPiN diodes have been extensively discussed, and the obtained results (simulations and experiments) confirm the applicability of these devices for dynamically reconfigurable antennas. A carrier concentration of 10 18 –10 19  cm −3 has been achieved within the optimized SPiN diode. Reconfigurable holographic antennas based on SPiN diodes that were activated by the injection of dc current were demonstrated in this paper. The resonance frequencies at 60 GHz and 64.5 GHz have been easily achieved by turning on or off different sections of the reconfigurable dipole antenna, while the radiation efficiencies were 85.1% and 83.8%, respectively. A double-layer holographic structure was also investigated in this paper. The study reveals that a novel reconfigurable antenna with SPiN diodes has been formed in a single system and has numerous advantages over the traditional antenna. [ABSTRACT FROM AUTHOR]

This paper reports the fabrication and electrical characterization of planar SOI Tunnel FETs (TFETs) made using a Low-Temperature (LT) process designed for 3D sequential integration. These proof-of-concept TFETs feature junctions obtained by Solid Phase Epitaxy Regrowth (SPER). Their electrical behavior is analyzed and compared to reference samples (regular process using High-Temperature junction formation, HT). Dual I D -V DS measurements verify that the TFET structures present Band-to-Band tunnelling (BTBT) carrier injection and not Schottky Barrier tunnelling. P-mode operating LT TFETs deliver an ON state current similar to that of the HT reference, opening the door towards optimized devices operating with very low threshold voltage V TH and low supply voltage V DD . [ABSTRACT FROM AUTHOR]

Systematic experiments demonstrate the presence of the kink effect even in FDSOI MOSFETs. The back-gate bias controls the kink effect via the formation of a back accumulation channel. The kink is more or less pronounced according to the film thickness and channel length. However, in ultrathin (<10 nm) and/or very short transistors (L < 50 nm), the kink is totally absent as a consequence of super-coupling effect. For the first time, thanks to the availability of body contacts, the body potential is probed to evidence the impact of majority carrier accumulation and drain pulse duration on the kink effect onset. [ABSTRACT FROM AUTHOR]

A systematic study to model and characterize the band-modulation Z 2 -FET device is developed bringing light to the relevance of the carrier lifetime influence. This work provides guidelines to optimize the Z 2 -FETs for sharp switching, ESD protection, and 1T-DRAM applications. Lower carrier lifetime in the Z 2 -FET helps in attaining the sharp switch. We provide new insights into the correlation between generation/recombination, diffusion, electrostatic barriers and carrier lifetime. [ABSTRACT FROM AUTHOR]

In this work, we investigate Second Harmonic Generation (SHG) as a non-destructive characterization method for Silicon-On-Insulator (SOI) materials. For thick SOI stacks, the SHG signal is related to the thickness variations of the different layers. However, in thin SOI films, the comparison between measurements and optical modeling suggests a supplementary SHG contribution attributed to the electric fields at the SiO 2 /Si interfaces. The impact of the electric field at each interface of the SOI on the SHG is assessed. The SHG technique can be used to evaluate interfacial electric fields and consequently interface charge density in SOI materials. [ABSTRACT FROM AUTHOR]

The aim of this paper is to present the out-of-equilibrium body potential behaviour in the Ψ-MOSFET configuration. Consistent measurements in this experimental setup succeeded in providing a substantial understanding of its characteristics in the depletion region. The final objective of this work is to envision this new measurement technique for biochemical sensor applications. Among its advantages, the most important are its simplicity, the good sensitivity, the measurement of a potential instead of a current and the low bias needed for detection compared to the conventional drain current measurements. [ABSTRACT FROM AUTHOR]

Rainfall erosivity is one important factor that controls soil erosion. The interannual variability of rainfall erosivity in southeast China connected to the ENSO (El Niño-Southern Oscillation). Rainfall erosivity across southeast China was assessed using daily rainfall data from 60 meteorological stations during the period from 1980 to 2013. We determined that models of erosivity based on daily rainfall can accurately predict annual rainfall erosivity. This paper presents a study of the effects of Niño3.4 SST (Sea Surface Temperatures) anomalies, the SOI (Southern Oscillation Index) and the MEI (Multivariate El Niño–Southern Oscillation Index) on rainfall erosivity in the southeast of China. Results indicated that average rainfall erosivity is stronger during El Niño events and weaker during La Niña events. Correlation analyses were applied to rainfall erosivity and Niño3.4 SST anomalies, SOI, and MEI. The effects of Niño3.4 SST and SOI on rainfall erosivity are evident, as demonstrated by a statistically significant correlation (> 95% confidence level). MEI was the best indicator ( P < 0.01) for representing the state of the ENSO. Results further indicated that 45, 31, and 40 of the 60 meteorological stations showed a significant correlation ( P < 0.05) between rainfall erosivity and SST anomalies, SOI, and MEI, respectively. Most of these stations were located in western Fujian Province. The ENSO was determined to exert the strongest influence on rainfall erosivity. This information would be useful in the implementation of new soil conservation strategies. [ABSTRACT FROM AUTHOR]

Scattering, absorption, diffraction, polarization, reflection and dispersion (SAD-PRD) losses in semiconductor waveguide at wavelength 1550 nm is dissected in present research. Two types of semiconductor waveguides such as silicon-Air and GaAs-Air deal with the current work to increase the efficiency of photonic integrated circuit. The appraisal of aforementioned losses is divulged using disparate notion, for example; reflection loss is scrutinized by employing transfer matrix method (TMM) whereas Maxwell’s equation is deployed to disclose absorption loss. Further dispersion, diffraction, polarization and scattering losses are examined with the help of mathematical formulation. Eventually, the outcomes of the above investigation affirmed that the overall transmitted efficiency of Si-Air and GaAs-Air waveguide is more than 90% and 89% respectively pertaining to angle of deviation (−12° to 12°) from Bragg’s angle. [ABSTRACT FROM AUTHOR]

This research investigates the mechanism of abnormal transconductance (Gm) and abnormal charge pumping current (I CP ) in body-tied partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field effect transistors. The I CP second hump region increases with channel length, yet is not affected by channel width. The cross-sectional view of the L-gate structure along the width direction demonstrates that a part of the poly gate area near the body contact is covered by a P + implant, inducing a parasitic channel under the P + poly gate. This parasitic channel leads to the abnormal Gm and I CP hump, and such mechanism is further verified by body floating devices. [ABSTRACT FROM AUTHOR]

The yield of grain crops by 25% depends on the quality of soil tillage. The working elements of plough-cultivators that exist today are not able to deal with solid and over-dried soil. This is because a flat ploughshare has a constant cutting angle along its entire length that spalls large pieces of soil. Therefore, to improve the crumbling of soil a wedge-shaped working element with a variable cutting angle is developed. The proposed form of ploughshares for plough-cultivators working elements with increasing cutting angles on each part activates additional forces inside the tilled soil layer. This ensures a greater interaction of soil and its better crumbling; the innovative working element with repeated variable cutting angles activates the internal potential of soil. As a result, it changes its inner structure, and its nutrients are better digestible by plants. The developed working element is 20-50 % more efficient than the series ones as it ensures better crumbling of soil. It is patented in the Russian Federation. [ABSTRACT FROM AUTHOR]

This paper proposes a straightforward methodology to estimate by simulation the Single-Event Upset (SEU) sensitivity of a memory array using open source and commercial codes. It is based on a four-step process including the calculation of the deposited energy distribution in sensitive volumes, the determination of a criterion for SEU triggering, the count of SEUs, and finally the SEU cross-section calculation. The approach is validated with neutron irradiation experiments performed on a 65 nm Static Random Access Memory (SRAM). [ABSTRACT FROM AUTHOR]

As semiconductor technology keeps scaling down, many advanced technology and process were applied in the semiconductor process. Especially for the application of IOT (internet of thing) technology, the low leakage and low power consumption product was the key component for this kind of application. SOI (Silicon-On-Insulator) wafer process is one of the advanced and important branches of the semiconductor manufacturing process. Its intrinsic advantage, low leakage and lower power consuming make it very suitable for personal communication device and IOT which match well with the application requirement. As is well known the SOI wafer is different form the normal bulk silicon wafer. The active sits on the silicon oxide insulator, which makes the final device separate from the substrate. Basically, all of the devices are floating on a nonconductive oxide layer. It comes with many challenges for process and analysis as compared with the conventional bulk silicon process. The most conventional analysis method is not applicable in the SOI device such as the PVC (passive voltage contrast) and current image methodology which are a very powerful and important in the failure analysis. In this paper, scanning capacitance is successfully used as the substitution of the PVC method. The SCM (Scanning Capacitance Microscopy) is a complicated process. Since all of the abnormality or physical change will affect the measured capacitance, then the capacitance signal will theoretically has many information with itself, including open, short and leakage. Through the detailed study, the contact level top-down SCM was successfully applied on the SOI unit. By proper setting of SCM bias condition, it can not only visualize the possible leaky location but also can reveal the possible path. Further nanoprobing and TEM (Transmission Electron Microscopy) have confirmed the SCM analysis. [ABSTRACT FROM AUTHOR]

Four-gate (G 4 -FET) transistors with ultrathin body and buried oxide (UTBB) are investigated. The devices were fabricated, measured and simulated in UTBB FD-SOI technology for the first time. The G 4 -FETs had either typical H-gate or Fork-gate configuration. In the latter device, the distance between the side junctions can be shrunk which improves the drain current modulation by the lateral gates. The overall drop in performance compared to earlier, thicker body implementations is explained by the onset of supercoupling effect in ultrathin devices. [ABSTRACT FROM AUTHOR]

In this paper, we demonstrate a compact silicon on insulator (SOI) 1 × 4 optical power splitter using seven horizontal slotted waveguides. Aluminum nitride (AIN) surrounded by silicon (Si) was used to confine the optical field in the slot region. All of the power analysis has been done in transverse magnetic (TM) polarization mode and a compact optical power splitter as short as 14.5 μm was demonstrated. The splitter was designed by using full vectorial beam propagation method (FV-BPM) simulations. Numerical investigations show that this device can work across the whole C-band (1530–1565 nm) with excess loss better than 0.23 dB. [ABSTRACT FROM AUTHOR]

We have been developing a new monolithic pixel sensor with silicon-on-insulator (SOI) technology for the International Linear Collider (ILC) vertex detector system. The SOI monolithic pixel detector is realized using standard CMOS circuits fabricated on a fully depleted sensor layer. The new SOI sensor SOFIST can store both the position and timing information of charged particles in each 20×20 μm 2 pixel. The position resolution is further improved by the position weighted with the charges spread to multiple pixels. The pixel also records the hit timing with an embedded time-stamp circuit. The sensor chip has column-parallel analog-to-digital conversion (ADC) circuits and zero-suppression logic for high-speed data readout. We are designing and evaluating some prototype sensor chips for optimizing and minimizing the pixel circuit. [ABSTRACT FROM AUTHOR]

In this paper, a novel SPAD architecture implemented in a Fully-Depleted Silicon-On-Insulator (SOI) CMOS technology is presented. Thanks to its intrinsic vertical 3D structure, the proposed solution is expected to allow further scaling of the pixel size while ensuring high fill factors. Moreover the pixel and the detector electronics can benefit of the well-known advantages brought by SOI technology with respect to bulk CMOS, such as higher speed and lower power consumption. TCAD simulations based on realistic process parameters and dedicated post-processing analysis are carried out in order to optimize and validate the avalanche diode architecture for an optimal electric field distribution in the device but also to extract the main parameters of the SPAD, such as the breakdown voltage, the avalanche triggering probability, the dark count rate and the photon detection probability. A comparison between the efficiency in back-side and front-side approaches is carried out with a particular focus on time-of-flight applications. [ABSTRACT FROM AUTHOR]

We propose a novel ESD protection device (GDNMOS: Gated Diode merged NMOS) fabricated with 28 nm UTBB FD-SOI high-k metal gate technology. By modifying the combination of the diode and transistor gate stacks, the robustness of the device is optimized, achieving a maximum breakdown voltage (V BR ) of 4.9 V. In addition, modifications of the gate length modulate the trigger voltage (V t1 ) with a minimum value of 3.5 V. Variable electrostatic doping (gate-induced) in diode and transistor body enables reconfigurable operation. A lower doping of the base enhances the bipolar gain, leading to thyristor behavior. This innovative architecture demonstrates excellent capability for high-voltage protection while maintaining a latch-up free behavior. [ABSTRACT FROM AUTHOR]

Semiconductor on Insulator (SOI) technology offers an assortment of opportunities for chip manufacturers in the Power Management market. Recent advances in the automotive and industrial markets, along with emerging features, the increasing use of sensors, and the ever-expanding “Internet of Things” (IoT) are providing for continued growth in these markets while also driving more complex solutions. The potential benefits of SOI include the ability to place both high-voltage and low-voltage devices on a single chip, saving space and cost, simplifying designs and models, and improving performance, thereby cutting development costs and improving time to market. SOI also offers novel new approaches to long-standing technologies. [ABSTRACT FROM AUTHOR]

Back-gated InGaAs-on-insulator lateral N + NN + MOSFETs are successfully fabricated by direct wafer bonding and selective epitaxial regrowth. These devices were characterized using a revisited pseudo-MOSFET configuration. Two different transport mechanisms are evidenced: volume conduction in the undepleted region of the film and surface conduction at the interface between InGaAs and buried insulator. We propose extraction techniques for the volume mobility and interface mobility. The impact of film thickness, channel width, and length is evaluated. Additional measurements reveal the variation of the transistor parameters at low temperature and under externally applied uniaxial tensile strain. [ABSTRACT FROM AUTHOR]

• Absence of asymmetry in the noise characteristics of GAA VNW pFETs on SOI substrates. • A clear impact of the nanowire p-type doping density on the noise Power Spectral Density and on the 1/f noise mechanism. • Optimal 1/f noise performance for an intermediate boron doping density around 5 × 1018 cm−3. In this work, the impact of the channel doping density on the low-frequency noise of silicon Gate-All-Around (GAA) Vertical Nanowire (VNW) pMOSFETs on Silicon-on-Insulator (SOI) substrates will be described and discussed. It is demonstrated that the dominant fluctuation mechanism of the 1/f noise in the subthreshold regime changes from number (Δn) to mobility (Δμ) fluctuations with increasing p-type doping density of the silicon nanowires. At the same time, the lowest input-referred voltage noise Power Spectral Density is observed for an intermediate boron concentration in the nanowire of 5 × 1018 cm−3. [ABSTRACT FROM AUTHOR]