Insight into carrier lifetime impact on band-modulation devices.

A systematic study to model and characterize the band-modulation Z 2 -FET device is developed bringing light to the relevance of the carrier lifetime influence. This work provides guidelines to optimize the Z 2 -FETs for sharp switching, ESD protection, and 1T-DRAM applications. Lower carrier lifetime in the Z 2 -FET helps in attaining the sharp switch. We provide new insights into the correlation between generation/recombination, diffusion, electrostatic barriers and carrier lifetime. [ABSTRACT FROM AUTHOR]