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Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28 nm FD-SOI technology.
- Source :
-
Solid-State Electronics . Feb2017, Vol. 128, p172-179. 8p. - Publication Year :
- 2017
-
Abstract
- We propose a novel ESD protection device (GDNMOS: Gated Diode merged NMOS) fabricated with 28 nm UTBB FD-SOI high-k metal gate technology. By modifying the combination of the diode and transistor gate stacks, the robustness of the device is optimized, achieving a maximum breakdown voltage (V BR ) of 4.9 V. In addition, modifications of the gate length modulate the trigger voltage (V t1 ) with a minimum value of 3.5 V. Variable electrostatic doping (gate-induced) in diode and transistor body enables reconfigurable operation. A lower doping of the base enhances the bipolar gain, leading to thyristor behavior. This innovative architecture demonstrates excellent capability for high-voltage protection while maintaining a latch-up free behavior. [ABSTRACT FROM AUTHOR]
- Subjects :
- *DIODES
*THERMODYNAMICS research
*SIMULATION methods & models
Subjects
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 128
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 120403063
- Full Text :
- https://doi.org/10.1016/j.sse.2016.10.026