Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors.

• This work presents experimental results of the series resistance variability in junctionless and inversion-mode nanowire transistors. • Due to series resistance, drain-current variability is larger than Y-function variability both in junctionless and inversion mode nanowires. • The influence of source-drain series resistance is higher on drain-current variability for junctionless than inversion mode, presenting an increase of up to 50% depending on the width and channel length. • Results suggest that series resistance variation impacts junctionless more than inversion mode nanowire transistors. This work analyzes the influence of source-drain series resistance variability over the drain current in junctionless and inversion mode nanowire transistors. A comparison between drain current and Y-function variability is presented using experimental data of nanowires with different widths and channel lengths. The source-drain series resistance variability is also presented. The results indicates that source-drain series resistance influence is higher on drain current variability for junctionless than inversion mode nanowire transistors. [ABSTRACT FROM AUTHOR]