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Phonon diffraction and interference patterns are observed at the atomic scale, using molecular dynamics simulations in systems containing crystalline silicon and nanometric obstacles, such as voids or amorphous inclusions. The diffraction patterns due to these nano-architectured systems of the same scale as the phonon wavelengths are similar to the ones predicted by the simple Fresnel–Kirchhoff integral. The few differences between the two approaches are attributed to the nature of the interface and the anisotropy of crystalline silicon. Based on the wave description of phonons, these findings can provide insights into the interaction of phonons with nano-objects and can have applications in smart thermal energy management. [ABSTRACT FROM AUTHOR]

Amorphous titanium dioxide (a-TiO2) is widely used as a coating material in applications such as electrochemistry and self-cleaning surfaces where its interface with water has a central role. However, little is known about the structures of the a-TiO2 surface and aqueous interface, particularly at the microscopic level. In this work, we construct a model of the a-TiO2 surface via a cut-melt-and-quench procedure based on molecular dynamics simulations with deep neural network potentials (DPs) trained on density functional theory data. After interfacing the a-TiO2 surface with water, we investigate the structure and dynamics of the resulting system using a combination of DP-based molecular dynamics (DPMD) and ab initio molecular dynamics (AIMD) simulations. Both AIMD and DPMD simulations reveal that the distribution of water on the a-TiO2 surface lacks distinct layers normally found at the aqueous interface of crystalline TiO2, leading to an ∼10 times faster diffusion of water at the interface. Bridging hydroxyls (Ti2–ObH) resulting from water dissociation decay several times more slowly than terminal hydroxyls (Ti–OwH) due to fast Ti–OwH2 → Ti–OwH proton exchange events. These results provide a basis for a detailed understanding of the properties of a-TiO2 in electrochemical environments. Moreover, the procedure of generating the a-TiO2-interface employed here is generally applicable to studying the aqueous interfaces of amorphous metal oxides. [ABSTRACT FROM AUTHOR]

The degradation of microplastics in relation to marine pollution has been receiving increasing attention. Because the spherulites that comprise microplastics have a highly ordered lamellar structure, their decomposition is thought to involve a lamellar structure collapse process. However, even in the simplest case of an order–disorder transition between lamellae and melt upon heating, the microscopic details of the transition have yet to be elucidated. In particular, it is unclear whether nucleation occurs at defects in the crystalline portion or at the interface between the crystalline and amorphous portions. To observe the transition in molecular simulations, an approach that distinguishes between the crystalline and amorphous structures that make up the lamella is needed. Local order parameters (LOPs) are an attempt to define the degree of order on a particle-by-particle basis and have demonstrated the ability to precisely render complex order structure transitions during phase transitions. In this study, 274 LOPs were considered to classify the crystalline and amorphous structures of polymers. Supervised machine learning was used to automatically and systematically search for the parameters. The identified optimal LOP does not require macroscopic information such as the overall orientation direction of the lamella layers but can precisely distinguish the crystalline and amorphous portions of the lamella layers using only a small amount of neighboring particle information. [ABSTRACT FROM AUTHOR]

Conducting oxide interfaces have attracted considerable attention, motivated by both fundamental science and potential for oxide electronic devices. An important gap for maturing such device technology is scalability and routes to control the electronic properties, which can narrow the device engineering space. Here, we demonstrate and explain the mechanisms of highly tunable conductive oxide interfaces. We synthesized amorphous--crystalline Al2O3/SrTiO3 interfaces using the scalable and industry-compatible atomic layer deposition (ALD) technique. An NH3 plasma pretreatment is employed in the ALD chamber, and its duration is used as a tuning parameter for the electrical properties, where a span of three orders of magnitude in the sheet resistance is observed at room temperature. For the most conductive sample, our results are comparable to the highest carrier density values reported for all-crystalline oxide interfaces prepared with state-of-the-art epitaxial growth techniques, such as pulsed laser deposition. We pinpoint the origin of conductivity to oxygen vacancies caused by the SrTiO3 reduction by the NH3 plasma pretreatment. These results present a simple, scalable, and industry-compatible route for realizing conductive oxide interfaces, with a broad parameter space, offering a versatile and flexible toolkit for oxide device engineering. [ABSTRACT FROM AUTHOR]

We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1−xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe grows predominantly in the (001) orientation on GaAs(111) and Bi2Se3, but along the (111) crystallographic direction on BaF2 (111) and Pb1−xEuxSe (111). High resolution transmission electron microscopy measurements reveal a sharp and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found a strong hysteresis of the antiferromagnetic–ferrimagnetic transition. The ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator. [ABSTRACT FROM AUTHOR]

The interfacial stiffness for nematic–smectic B (nm–smB) interface in a liquid crystalline (LC) material is calculated using Capillary Wave Theory (CWT) and molecular dynamics simulations. The Gay–Berne (GB) pair potential with parameters κ, κ′, μ, and ν equal to 3, 5, 2, and 1 is used to model the LC material. Using a smart three-step recipe, we have obtained an nm–smB phase coexistence in our simulations where the nm and smB directors are nearly parallel to each other and perpendicular to the interface normal. The density profiles are used to compute the nm–smB coexisting density range, the interfacial width, and its position. The smectic phase is differentiated from the nematic phase by using the local bond order parameter (q6q6), which has helped us to demonstrate that the interface is indeed rough. Finally, the interfacial stiffness of the nm–smB interface is computed by following the CWT analysis and is found to be γ ̃ n m − s m B = 0.398 61 k B T / σ e e 2 = 0.044 29 / σ s s 2 , where σee and σss are the length and diameter of the GB LC particles. [ABSTRACT FROM AUTHOR]

We investigate the magneto-optical (MO) polar Kerr enhancement of Fabry–Pérot cavities with perpendicular magnetic anisotropy for chemical and biological sensing applications. The MO cavities consist of stacked films with a half-mirrored surface layer, a dielectric interference layer, a total-reflection mirror, and a magnetic metal layer. Co80Pt20 and Al-doped ZnO (AZO) thin films were utilized as the magnetic and interference layers, respectively. The cavities produce two types of MO enhancement depending on the thickness of the magnetic layer. The sample with a thick magnetic layer as a total-reflection mirror generates a single peak in the polar Kerr spectrum. Contrarily, inserting a several-nanometer-thick CoPt layer into the AZO layer produces a resonant-type spectrum. Although both samples generate large MO enhancement factors (>50), the magnetic properties significantly differ. The AZO/CoPt/AZO interference layer controls the crystalline and interface conditions and produces a square-shaped out-of-plane hysteresis loop with a large Kerr rotation angle. Moreover, the use of an ultrathin CoPt film significantly reduces the saturation magnetization field. Thus, Fabry–Pérot cavities with a CoPt/AZO interference layer may serve as high-sensitivity, low-energy-consumption sensor elements. [ABSTRACT FROM AUTHOR]

We calculate the degree to which the final structure of the local groundstate in a liquid is a function of the strength of a perturbing potential applied during energy minimization. This structural susceptibility is shown to correlate well with the observed tendency of the liquid adjacent to a crystal interface to exhibit a crystalline groundstate, a feature that has been strongly linked to the observation of ultra-fast crystal growth in pure metals and ionic melts. It is shown that the structural susceptibility increases dramatically as the interaction potential between atoms is softened. [ABSTRACT FROM AUTHOR]

Spherulite-related space–charge electret properties of polypropylene (PP) have been widely discussed in the past decades. In the present paper, a less-common crystalline structure in PP—transcrystalline PP—is studied regarding its electret behavior in comparison with the typical spherulitic morphology. Polarized light microscopy and differential scanning calorimetry were employed to characterize the crystallite types and crystallinities of transcrystalline and spherulitic PP. Their electret functionality is investigated by means of thermally stimulated discharge experiments, where the cross-over phenomenon is observed on transcrystalline PP films, whereas surface-potential saturation and undercharging on the surface occur on the spherulitic samples. Besides, an asymmetrical behavior of positive and negative surface-charge stabilities is found on PP with spherulites, the negatively charged spherulitic surfaces show a better charge stability. It is shown that PP electrets are very sensitive to changes in the microscopic crystalline structures and their interfaces as well as in the molecular conformations controlled through adjustments of the respective processing steps. In addition, surface and bulk nanocomposites of PP or low-density polyethylene with inorganic particles are included in the comparison. In view of recent developments in the areas of PP-based electret-fiber filters and cellular-foam ferroelectrets, the observed changes in the charge-storage properties may have particular relevance, as the required film, fiber, or foam processing might significantly modify crystalline morphologies and nano-scale interfaces in PP electrets. Limitations in the charge-storage capabilities of interface structures may also be of interest in the context of high-voltage electrical-insulation materials where reduced space–charge accumulation and slightly increased charge transport can be advantageous. [ABSTRACT FROM AUTHOR]

Crystallization processes of amorphous germanium–tin (GeSn) under low-energy electron-beam irradiation were examined using transmission electron microscopy (TEM). Freestanding amorphous GeSn thin films were irradiated with a 100 keV electron beam at room temperature. The amorphous GeSn was athermally crystallized by electron-beam irradiation, when the electron flux exceeded the critical value. Heterogeneous structures consisting of nano- and micro-crystallites were formed after crystallization of amorphous GeSn with ∼24 at. % Sn in the as-sputtered amorphous state. In situ TEM observations of structural changes under electron-beam irradiation revealed that random nucleation and growth of nanocrystallites occur at the early stage of crystallization, followed by rapid formation of micro-grains surrounding the nanocrystals. It has been suggested that the growth of micro-grains progresses via supercooled liquid Sn at the amorphous/crystalline interface. The resultant GeSn grains with a size of a few micrometers contained ∼15 at. % Sn, much larger than the solubility limit of Sn in Ge (∼1 at. % Sn). [ABSTRACT FROM AUTHOR]

We investigate how varying molecular topology of polymers influences crystallization in thin polymer films. In particular, we simulate linear and star polymers of fixed mass having a progressively increasing number of arms (f ≤ 16) in a system where the linear polymer exhibits crystallization in a thin film geometry, but no apparent crystallization in the corresponding bulk material. The degree of crystallization of the polymer film at long times decreases progressively with increasing f, and no crystallization is observed beyond f = 8. Crystallization for smaller values of f develops as a sigmoidally shaped wavefront initiating from the supporting crystalline interface. We suggest that large shape fluctuations and the competition of length scales of star polymers with high f lead to inhibited crystallization. [ABSTRACT FROM AUTHOR]

The contact of heterogeneous materials with different atomic structures and concentrations becomes omnipresent in modern materials. The differences across the interface introduce various gradients that could alter thermodynamic and kinetic behaviors of the materials. Here, we report a spontaneous melting of the interface formed by a crystalline metal and an amorphous solid at the temperature below their respective equilibrium melting temperatures. The transformation can even become continuous with disappearance of all known features of the first-order melting transition. We show that the change in the nature of melting in the interface region is caused by random disordering induced by interdiffusing atomic elements or impurities in the crystalline phase and the presence of a strong concentration gradient constrained by the sample geometry. [ABSTRACT FROM AUTHOR]

Extensive molecular dynamics simulations of xenon in two classes of zeolite crystal systems, one consisting of purely intra-crystalline space and the other with both intra- and inter-crystalline space are reported. The latter mimics a typical poly-crystalline sample of zeolite. Comparison of results from these two systems provides insights into the structure and dynamics in the presence of inter-crystalline space. The temperature, as well as the distance between the crystallites, has been varied. The density distribution and diffusivities calculated inside the poly-crystalline system show that the interfacial region between the crystal and the inter-crystalline region acts as a bottleneck for diffusion through the system. At lower temperatures, the particles are trapped at the interface due to the pronounced energy minima present in that region. With the increase in temperature, the particles are able to overcome this barrier frequently, and the transport across the inter-crystalline region is increased. A ballistic or superdiffusive motion is seen in the inter-crystalline region along all the axes except along the axis which has the inter-crystalline space. The transition time for ballistic to diffusive motion increases with the increase in the length of the inter-crystalline space. Velocity auto- and cross correlation functions exhibit strong oscillations and exchange of kinetic energy along directions perpendicular to the direction of the inter-crystalline space. These results explain why uptake and PFGNMRmeasurements exhibit lower values for diffusivity for the same system when compared to Quasi- Elastic Neutron Scattering. Thus, using molecular dynamics simulations, we were able to correlate the difference of diffusivity values measured using various experimental methods where these intercrystalline regions are common. [ABSTRACT FROM AUTHOR]

2D electron gases (2DEGs) formed at oxide interfaces provide a rich testbed for fundamental physics and device applications. While the discussion of the physical origins of this phenomenon continues, the recent discovery of oxide 2DEGs at non-epitaxial interfaces between amorphous and crystalline oxides provides useful insight into this debate. Furthermore, using amorphous oxides offers a low-cost route towards realizing 2DEGs for device applications. In this work, the band offsets of a simple model system of an amorphous-crystalline oxide interface are investigated. The model system consists of amorphous Al2O3 grown on single-crystalline (001) SrTiO3. X-ray photoelectron spectroscopy is employed to study the chemical states, bandgap, and band offsets at the interface. The density of ionic defects near the interface is found to be below the detection limit, and the interface is found to be insulating. Analysis of the relative band structure yields significant interfacial barriers, exceeding 1.05 eV for holes and 2.0 eV for electrons. The barrier for holes is considerably larger than what is known for related material systems, outlining the promise of using amorphous Al2O3 as an effective and simple insulator, an important building block for oxide-based field effect devices. [ABSTRACT FROM AUTHOR]

Direct wafer bonding of β-Ga2O3 and N-polar GaN at a low temperature was achieved by acid treatment and atmospheric plasma activation. The β-Ga2O3/GaN surfaces were atomically bonded without any loss in crystalline quality at the interface. The impact of post-annealing temperature on the quality of bonding interfaces was investigated. Post-annealing at temperatures higher than 700 °C increases the area of voids at bonded interfaces probably due to the difference in the coefficient of thermal expansion. The integration of β-Ga2O3 on the GaN substrate achieved in this work is one of the promising approaches to combine the material merits of both GaN and Ga2O3 targeting the fabrication of novel GaN/β-Ga2O3 high-frequency and high-power electronics as well as optoelectronic devices. [ABSTRACT FROM AUTHOR]

The potential of zero charge (PZC) is a fundamental property that describes the electrode/electrolyte interface. The determination of the PZC at electrode/ionic liquid interfaces has been challenging due to the lack of models that fully describe these complex interfaces as well as the non-standardized approaches used to characterize them. In this work, we present a method that combines electrode immersion transient and impedance measurements for the determination of the PZC. This combined approach allows the distinction of the potential of zero free charge (pzfc), related to fast double layer charging on a millisecond timescale, from a potential of zero charge on a timescale of tens of seconds related to slower ion transport processes at the interface. Our method highlights the complementarity of these electrochemical techniques and the importance of selecting the correct timescale to execute experiments and interpret the results. [ABSTRACT FROM AUTHOR]

Solid-phase epitaxy (SPE) and other three-dimensional epitaxial crystallization processes pose challenging structural and chemical characterization problems. The concentration of defects, the spatial distribution of elastic strain, and the chemical state of ions each vary with nanoscale characteristic length scales and depend sensitively on the gas environment and elastic boundary conditions during growth. The lateral or three-dimensional propagation of crystalline interfaces in SPE has nanoscale or submicrometer characteristic distances during typical crystallization times. An in situ synchrotron hard x-ray instrument allows these features to be studied during deposition and crystallization using diffraction, resonant scattering, nanobeam and coherent diffraction imaging, and reflectivity. The instrument incorporates a compact deposition system allowing the use of short-working-distance x-ray focusing optics. Layers are deposited using radio-frequency magnetron sputtering and evaporation sources. The deposition system provides control of the gas atmosphere and sample temperature. The sample is positioned using a stable mechanical design to minimize vibration and drift and employs precise translation stages to enable nanobeam experiments. Results of in situ x-ray characterization of the amorphous thin film deposition process for a SrTiO3/BaTiO3 multilayer illustrate implementation of this instrument. [ABSTRACT FROM AUTHOR]

Recently, the crystallographic phases of HfO2 and ZrO2, including the polar phases, have been well characterized, and also the total and free energies have been calculated. However, less is known about the structure and energy of the crystalline coherent interface—also called the interphase. The formation of domain and phase boundaries is determined by interphase energies and properties, and their knowledge is indispensable to better understand the phase formation and phase stability. We have calculated the interphase energy for HfO2 and ZrO2 at T = 0 K for the relevant phase pairs with two methods, which are in good agreement. The method is applicable to any crystalline material with metastable phases. The values range in a few 100 mJ/m2, which is consistent with previous estimates from room temperature but too large for estimates from high-temperature processes. We propose a temperature dependence of interphase energy such that it becomes small close to the phase transition. [ABSTRACT FROM AUTHOR]

THz and DC losses in crystalline states of GeSbTe and AgInSbTe phase-change material systems are re-examined and discussed. Although a simple free carrier transport has been assumed so far in the GeSbTe (GST) system, it is shown through recent experimental results that a series sequence of intragrain and intergrain (tunneling) transport, as recently formulated in Shimakawa et al., 'The origin of non-Drude terahertz conductivity in nanomaterials,' Appl. Phys. Lett. 100, 132102 (2012) may dominate the electronic transport in the commercially utilized GST system, producing a non-Drude THz conductivity. The extracted physical parameters such as the free-carrier density and mobility are significantly different from those obtained from the Drude law. These physical parameters are consistent with those obtained from the DC loss data, and provide further support for the model. Negative temperature coefficient of resistivity is found even in the metallic state, similar to amorphous metals, when the mean free path is short. It is shown that the concept of minimum metallic conductivity, often used in the metal-insulator transition, cannot be applied to electronic transport in these materials. [ABSTRACT FROM AUTHOR]

We present a density functional theory study of the oxidation of 1D periodic rods supported along the [001] direction on the rutile TiO2(110) surface. The study shows evidence for an oxidation of the interface between the supported Au and the TiO2 crystal. The added O atoms adsorb at the 5f-Ti atoms in the through under the Au rod and are stabilized by charge transfer from the nearest Au atoms. Despite an extensive search, we find no low energy barrier pathways for CO oxidation involving CO adsorbed on Au and O at the perimeter of the Au/TiO2 interface. This is in part attributed the weak adsorption of CO on cationic Au at the perimeter. [ABSTRACT FROM AUTHOR]

Heterojunction device performance has strong dependence on its junction interface. ZnO deposition over GaN to achieve a heterojunction is challenging as it usually requires high temperature and vacuum processing. It is even more demanding to achieve a crystalline interface while making ZnO nanorod based heterojunction. Here we report simple solution process for epitaxial growth of ZnO nanorods over GaN. High resolution x-ray diffraction studies revealed highly crystalline c-axis oriented ZnO nanorod growth by a simple hydrothermal process. ZnO/GaN heterojunction device fabricated using hydrothermally synthesized ZnO nanorods showed superior performance compared to polycrystalline sputter deposited ZnO based heterojunction. [ABSTRACT FROM AUTHOR]

Heusler compounds, in both cubic and hexagonal polymorphs, exhibit a remarkable range of electronic, magnetic, elastic, and topological properties, rivaling that of the transition metal oxides. To date, research on these quantum materials has focused primarily on bulk magnetic and thermoelectric properties or on applications in spintronics. More broadly, however, Heuslers provide a platform for discovery and manipulation of emergent properties at well-defined crystalline interfaces. Here, motivated by advances in the epitaxial growth of layered Heusler heterostructures, I present a vision for Heusler interfaces, focusing on the frontiers and challenges that lie beyond spintronics. The ability to grow these materials epitaxially on technologically important semiconductor substrates, such as GaAs, Ge, and Si, provides a direct path for their integration with modern electronics. Further advances will require new methods to control the stoichiometry and defects to "electronic grade" quality and to control the interface abruptness and ordering at the atomic scale. [ABSTRACT FROM AUTHOR]

Quasiphase matching (QPM) is a widely used theory in crystal to analyze the character of second-harmonic generation (SHG) emitted from it. Based on the structural features of collagen type I, where the constituted fibrils in collagen function as a crystal which has the structure of two-dimensional (2D) quasicrystalline, in this paper, we use the QPM theory on collagen for SHG emission direction study under the excitation of laser light through a microscope. The effects of numerical aperture NA, as well as the structural parameters, such as QPM order (m,l) and collagen period a=d1+d2 associated with the fibrils diameter (d1), packing density and interfibrils structure (d2), etc., on SHG emission angle φ have been investigated. Our theoretical results show that collagen period a has threshold effect on φ to present forward or backward SHG emission and NA has minor influence on this threshold value a. Collagen period of a has more significant influence on SHG emission angle φ when a is smaller than the threshold value. In reality, we realize that diameter of collagen fibrils d1 plays a major role on forward or backward emission of SHG. Here, for example, (we assume d1=a/2), when d1≤95 nm [(m,l)=(1,0)], the backward SHG shows up at any magnitude of NA, while when d1≥150 nm [(m,l)=(1,0)], SHG presents forward emission feature under all circumstances. Between them, SHG emits from forward direction to backward direction as the increase in NA. The QPM order (m,l) has nonlinear impact on SHG emission angle φ and has different degrees of influence on different collagen period a. Our theoretical results are highly consistent with the experiments results demonstrated by other researchers and provide a proper explanation of the phenomenon of appreciable backward SHG signals appearing in collagen type I. Our established theoretical model of applying QPM theory in 2D quasicrystalline fibrils is therefore confirmed to be a suitable model for dealing with SHG in type I collagen. [ABSTRACT FROM AUTHOR]

We present the results of molecular dynamics simulations of the crystal nucleation rate in a supercooled Lennard-Jones liquid. The nucleation rate as a function of the pressure has been calculated by the method of determining the expectation time for liquid crystallization at temperatures higher than that of the triple point (T*=0.865), close to the temperature of the terminal critical point of the metastable extension of the melting curve (T*=0.55) and below this temperature (T*=0.4). In computer experiments the nucleation rate varied from 1032 to 1035 s-1 m-3. The dimensions of critical nuclei and the pressure inside them, the surface free energy at a critical crystal nucleus-liquid interface, the height of the nucleation barrier, and the Zeldovich factor have been determined from the results of molecular dynamics simulations and their comparison with classical homogeneous nucleation theory. It is shown that the surface free energy at a curved crystal-liquid interface, as distinct from a flat interface, has also been determined at temperatures lower than the temperature of the terminal critical point of the melting curve and is a monotonically increasing function of the temperature. [ABSTRACT FROM AUTHOR]

We develop a computationally efficient method for the theoretical analysis of thermophoresis of nanoparticles and adatoms on crystalline surfaces (thermal tweezers) for efficient parallel nanofabrication. The analysis of surface diffusion of particles or adatoms in the presence of strong temperature gradients is conducted through the direct determination of probability distributions for diffusing particles, using the numerical solution of the Smoluchowski diffusion equation with varying (temperature-dependent) diffusion constant. The local values of the diffusion constant are determined from the Fokker–Planck equation for the considered crystalline potential of the substrate and local temperature. Steady-state and nonsteady-state particle distributions on the surface are obtained and analyzed in the presence of optically-induced strong temperature gradients. Detailed comparison of this approach with the previously obtained results from the Monte Carlo simulations of the Langevin equation is conducted, demonstrating high computational efficiency, and accuracy of the new method in the high-friction regime. Applicability conditions for the developed method are also determined and discussed. [ABSTRACT FROM AUTHOR]

The amorphous (a-) CoFeB/crystalline (c-) MgO based tunneling system interface has been studied by means of quantitative high resolution transmission electron microscopy from atomic to micrometer length scales with increasing annealing temperatures. On the micron scale an irregular nucleation is found. On the atomic scale a long-range order is induced by the MgO interface, explaining the high tunnel magnetoresistance values >100% even for not fully crystallized CoFeB/MgO/CoFeB tunnel junctions. [ABSTRACT FROM AUTHOR]

In the effort to develop atomistic models capable of accurately describing nanoscale systems with complex interfaces, it has become clear that simple treatments with rigid charge distributions and dispersion coefficients selected to generate bulk properties are insufficient to predict important physical properties. The quantum Drude oscillator model, a system of one-electron pseudoatoms whose “pseudoelectrons” are harmonically bound to their respective “pseudonuclei,” is capable of treating many-body polarization and dispersion interactions in molecular systems on an equal footing due to the ability of the pseudoatoms to mimic the long-range interactions that characterize real materials. Using imaginary time path integration, the Drude oscillator model can, in principle, be solved in computer operation counts that scale linearly with the number of atoms in the system. In practice, however, standard expressions for the energy and pressure, including the commonly used virial estimator, have extremely large variances that require untenably long simulation times to generate converged averages. In this paper, low-variance estimators for the internal energy are derived, in which the large zero-point energy of the oscillators does not contribute to the variance. The new estimators are applicable to any system of harmonic oscillators coupled to one another (or to the environment) via an arbitrary set of anharmonic interactions. The variance of the new estimators is found to be much smaller than standard estimators in three example problems, a one-dimensional anharmonic oscillator and quantum Drude models of the xenon dimer and solid (fcc) xenon, respectively, yielding 2–3 orders of magnitude improvement in computational efficiency. [ABSTRACT FROM AUTHOR]

In this paper, the impact of iron contamination on the conversion efficiency of single-crystalline p-type silicon solar cells is investigated by means of the combination of numerical simulations and experimental data, taking into account the more recent results about the properties of iron in single-crystalline silicon. Numerical simulations highlight the fill factor losses due to the injection-level dependence of the bulk lifetime, which attenuates the decrease of the open circuit voltage and thus that of the solar cell conversion efficiency with iron concentration. Gettering and hydrogenation effects are quantified by means of experimental results obtained from voluntarily contaminated solar cells and integrated in the simulations. The results show that iron appears to be a metallic impurity rather well tolerated in p-type single-crystalline silicon solar cells, because its injection-level dependent bulk lifetime, like its abilities to be gettered and to be passivated by hydrogenation, limits its influence on the solar cell conversion efficiency. [ABSTRACT FROM AUTHOR]

We have studied the depth dependence and temperature behavior of the ordering of smectic-A films close to the smectic A-nematic transition, deposited on grated glass. X-ray grazing incidence geometry in reflection mode through the glass substrate was used to characterize the samples. Our results indicate the presence of a structure similar to the helical twist grain boundary phase. The structure has two maxima, one close to the glass-liquid crystal interface and another about 8 μm above the surface. The structure at 8 μm is the one that dominates at higher temperatures. In addition, we find that order is preserved to temperatures close to the nematic-isotropic transition temperature for the deeper gratings. We find also a dependence of the orientation of the structure with the depth of the grating and the elastic constant of the liquid crystal. [ABSTRACT FROM AUTHOR]

This article studies theoretically and experimentally the recombination at the amorphous/crystalline silicon interface of a heterojunction with intrinsic thin layer (HIT) structure without metallization. We propose a physical model to calculate the interface recombination rate under illumination. This model calculates the effective lifetime τeff as a function of the average excess minority carrier concentration 〈Δn〉. In order to test the model, we prepared a set of HIT structures. The dependence of τeff vs 〈Δn〉 of the samples is measured using the quasi-steady-state photoconductance technique. By fitting our model to the experimental data, we determine the a-Si:H/c-Si interface parameters and the doping density of the amorphous layer. [ABSTRACT FROM AUTHOR]

We propose a ray optics model to calculate the trapping force on a dielectric particle located on the interface between two media and illuminated by a focused evanescent field beam. Such a focused evanescent beam is produced by a high numerical aperture objective with a central obstruction whose size satisfies the total internal reflection condition on the interface. The dependence of the lifting force on the obstruction size, the particle size, and the distance of the particle from the interface is revealed. [ABSTRACT FROM AUTHOR]

A three-dimensional transient temperature field model (TTFM) is proposed for the general problem of laser-induced out-of-equilibrium annealing of a bilayer device, which is made up of a bulk material covered by a transparent layer. The TTFM solves the moving-boundary problem with a deterministic relation between the interface velocity and temperature in contrast to preceding problem-dependent models, which use an interface-tracking heuristic algorithm. The TTFM is the first step to model many temperature-driven phenomena such as diffusion and segregation in laser annealing. Both computed transient temperature field and melted-zone dimensions of a SiO2/Si example device, which is irradiated by a focused visible (532 nm) laser, are in very good agreement with experimental measurements. [ABSTRACT FROM AUTHOR]

The location of the liquidus in the low-pressure crystalline phase of SnI4 was determined utilizing in situ x-ray diffraction measurements under pressures up to approximately 3.5 GPa. The liquidus is not well fitted to a monotonically increasing curve such as Simon's equation, but breaks near 1.5 GPa and then becomes almost flat. The results are compared to those from molecular dynamics simulations. Ways to improve the model potential adopted in the simulations are discussed. [ABSTRACT FROM AUTHOR]

Thin films of solid ammonia (NH3 and ND3) have been characterized using low temperature (25–110 K) Fourier-transform infrared (FTIR) spectroscopy, and the three solid phase (amorphous, metastable, and crystalline) spectra are reported. This work has been motivated by confusion in the literature about the metastable and crystalline phases as a result of an early erroneous report by Staats and Morgan [(J. Chem. Phys. 31, 553 (1959)]. Although the crystalline phase has subsequently been reported correctly, the metastable phase has not been described in the literature in detail. The unique characteristics of the metastable phase, reported here for the first time, include multiple peaks in the ν2 and ν3 regions and peak intensities that are dependent on the deposition temperature. This behavior may be the result of (a) preferential molecular orientations in the solid, or (b) exciton splitting due to different crystal shapes in the solid. The amorphous and metastable phases of deuterated ammonia are also reported for the first time. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

End of range (EOR) defects are the most commonly observed defects in ultrashallow junction devices. They nucleate at the amorphous-crystalline interface upon annealing after amorphization due to ion implantation. EOR defects range from small interstitial clusters of a few atoms to {311} defects and dislocation loops. They are extrinsic defects and evolve during annealing. Li and Jones [Appl. Phys. Lett., 73, 3748 (1998)] showed that {311} defects are the source of the projected range dislocation loops. In this article, the same theory is applied to EOR dislocation loops to model the nucleation and evolution of the loops. The model is verified with experimental data and accurately represents the nucleation, growth, and Ostwald ripening stages of dislocation loop evolution. The density and the number of interstitials trapped by dislocation loops are compared with the experimental results for several annealing times and temperatures. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Laser micro-Raman spectroscopy was used to examine the silicon substrates machined by single-point diamond turning at machining scales ranging from 10 to 1000 nm under plane strain conditions. The results showed that the subsurface layer was partially transformed to amorphous, the extent of amorphization depending strongly on the undeformed chip thickness. The intensities of the crystalline phase and the amorphous phase show opposite tendencies with respect to the undeformed chip thickness. In brittle regime machining, Raman spectra differ depending on the test locations. The intensity of the amorphous phase reaches maximum near the ductile–brittle transition boundary. In ductile regime machining, the intensity of the amorphous phase decreased sharply as the undeformed chip thickness decreased. This work provides technological insights into the possibility of direct manufacturing of subsurface damage-free optical and optoelectronic products of silicon by ductile machining without the need for or with a decreased need for subsequent etching or chemomechanical polishing. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

A study of the energy accommodation of neon colliding with a crystalline self-assembled 1-decanethiol monolayer adsorbed on Au(111) is presented. The intensity and velocity dependencies of the scattered neon as a function of incident angle and energy were experimentally measured. Scattering calculations show good agreement with these results, which allows us to examine the detailed dynamics of the energy and momentum exchange at the surface. Simulation results show that interaction times are, at most, a few picoseconds. Even for these short times, energy exchange with the surface, both normal and in-plane, is very rapid. An important factor in determining the efficiency of energy exchange is the location at which the neon collides with the highly corrugated and structurally dynamic unit cell. Moreover, our combined experimental and theoretical results confirm that these are truly surface collisions in that neon penetration into the organic boundary layer does not occur, even for the highest incident energies explored, 560 meV. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Polycrystalline AgNd(WO[sub 4])[sub 2] has been prepared by a in solid-state reaction. X-ray diffraction measurements indicate that this compound crystallizes with a scheelite-type tetragonal structure. Absorption and emission spectra have been measured, using the technique of the crystal field parameters, to obtain the energy levels scheme for Nd[sup 3+] ions in the crystalline matrix. These data indicate the existence of a structural local disorder associated with a random distribution of the ions of Ag[sup +] and Nd[sup 3+]. The temperature variation of the paramagnetic susceptibility in the range from 2 to 300 K has been studied. The Van Vleck formula has been used to calculate the temperature variation of the paramagnetic susceptibility and it was compared with the experimental results. Particularly at low temperatures, satisfactory agreement has been obtained. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

The development of a methanol multilayer on Pd{110} at 124 K has been examined with reflection–absorption infrared spectroscopy (RAIRS). The spectra indicate that a crystalline multilayer grows in which hydrogen-bonded chains of molecules are parallel to the substrate. A “sandwich” phase is identified and consists of several physisorbed layers in between the chemisorbed layer and the crystalline phase. Methanol desorption and decomposition on heating have been followed with simultaneous temperature-programmed RAIRS and TPD measurements. Desorption of chemisorbed methanol is observed at 214 K, whereas the decomposition reaction yielding adsorbed CO and H proceeds at ∼295 K on heating at 2 K s-1. Spectral bands observed on adsorption at 180 K to low exposure, which precede the appearance of the CO signal, are tentatively attributed to chemisorbed methanol. No conclusive evidence for a methoxy intermediate in the decomposition reaction is found. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We synthesized a single phase GdSi[sub 2] film on a Si(111) substrate with an interfacial SiO[sub 2] layer. In order to take account of the role of the interfacial SiO[sub 2] layer, systematic investigations on clean and oxidized Si substrates were done by using in situ reflection of high energy electron diffraction, x-ray diffraction, and atomic force microscopy of the silicides formed with post annealing. Our result showed that the interfacial SiO[sub 2] layer enhanced the structural transformation of the initial GdSi[sub 1.7] hexagonal phase into the GdSi[sub 2] orthorhombic phase above the decomposition temperature of SiO[sub 2](∼800 °C). We proposed a reaction mechanism for the GdSi[sub 2] film formation with the help of the interfacial SiO[sub 2] layer. The measured electrical resistivity of the Gd-silicide film strongly depends on the silicide phase. [ABSTRACT FROM AUTHOR]

Some hexa-substituted benzenes are known to exhibit molecular rotation in their crystalline phase, but this phenomenon is not very well understood. In this context, we have critically examined two materials, namely pentachloronitrobenzene and 2,3,4,5,6-pentabromotoluene over a wide range of temperatures, using dielectric spectroscopy and differential scanning calorimetry (DSC) to ascertain the nature of the above said relaxation. A relaxation process is found in the crystalline phase, which is slightly non-Arrhenius in its temperature dependence in the former and deviation from Debye behavior has been found in both the samples. This behavior is similar to that of the primary (or α-) relaxation found in glass forming materials. This phenomenon is found to correspond to a steplike (small) change in the specific heat in the DSC measurements indicating that it is a glass transition phenomenon. The sub-T[sub g] relaxation data do not indicate any secondary (or β-) process (of measurable magnitude). However, the same materials when studied in small quantities in the liquid matrix of o-terphenyl (nonpolar) indicated a considerable magnitude for the β-process of molecules even below the liquid T[sub g] of these mixtures. The results are discussed in the context of the glass transition phenomena of the above materials. [ABSTRACT FROM AUTHOR]

The location of the liquidus in the low-pressure crystalline phase of SnI4 was determined utilizing in situ x-ray diffraction measurements under pressures up to approximately 3.5 GPa. The liquidus is not well fitted to a monotonically increasing curve such as Simon's equation, but breaks near 1.5 GPa and then becomes almost flat. The results are compared to those from molecular dynamics simulations. Ways to improve the model potential adopted in the simulations are discussed. [ABSTRACT FROM AUTHOR]

Structural and compositional analyses of a MnSi layer have been performed to elucidate the growth mechanism. The MnSi layer was grown by reactive deposition epitaxy in the presence of an Sb flux. The existence of Sb was found at the MnSi/Si interface and on the surface of MnSi layer by secondary ion mass spectrometry. In addition, x-ray photoelectron spectroscopy measurement shows that MnSb is formed on the surface of the grown MnSi layer. On the atomic scale, scanning transmission electron microscopy observations reveal the existence of an Sb–Mn–Sb structure at the interface between the MnSi layer and the Si substrate. The formation of the MnSb plays an important role for the improvement of crystalline quality of the silicide layer, acting both as a surfactant and as a compliant substrate for stress relief. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We analyze two anisotropic atom–atom models used to describe the crystalline α, β, and γ phases of S[sub 8] crystals, the most stable compound of elemental sulfur in solid phases, at ambient pressure and T≤400 K. The calculations are performed via a series of classical molecular dynamics (MD) simulations, with flexible molecular models and using a constant pressure–constant temperature algorithm for the numerical simulations. All intramolecular modes that mix with lattice modes, and are therefore relevant to the onset of structural phase transitions, are taken into account. Comparisons with experimental data and previous results obtained with an isotropic atom–atom molecular model are also performed. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Presents information on a study which developed a theory of behavior of foreign solid inclusions in a liquid being crystallized. Methodology of the study; Results and discussion on the study; Conclusions.

Examines the modeling and experimental results of ion-beam-induced interfacial amorphization in silicon. Dependence on substrate temperature, ion flux and nuclear energy deposition at the amorphous/crystalline interface; Basis of the model on ballistic transport effects; Generation of a thermal ion-beam-induced defect; Thermally activated recombination of defects.

Studies the precipitation and growth of Ge crystallites formed via a two-step process of hydrothermal oxidation of Si1-xGexO2 and subsequent chemical reduction in forming gas. Ge-particle distributions; Particle diameters and their position relative to the Si/oxide interface with closed circles.

GaSe, a layered semiconductor, may be grown on the Si(111) surface by molecular beam epitaxy. The crystalline quality is relatively good, in the sense that the MeV [sup 4]He ion minimum channeling yield (∼30%) is as low as that of state-of-the-art bulk material, and the interface is atomically abrupt. The initial film deposits are epitaxial islands, and subsequent growth is in the Frank-van der Merwe mode. With the islands already relaxed at the nucleation stage and coalescing to essentially uniform coverage with the first monolayer of deposition, GaSe on Si(111) provides an example of van der Waals epitaxy. However, it is difficult to understand how epitaxy (crystallographic alignment with the substrate) can occur in such a case, where the film is incommensurate starting from the initial nuclei. A mechanism for alignment of the islands is proposed: they are aligned with the silicon substrate through the influence of dangling bonds at their perimeter, being “quasi-commensurate” by virtue of their small lateral size. Although discommensurate regions are created as the islands grow laterally, there is simply no change in their orientation. [ABSTRACT FROM AUTHOR]

Focuses on a study which measured the root-mean-square width of the buried crystalline/amorphous silicon(001)/silicon oxide[sub2] interface. Properties of metal-oxide semiconductor devices; Reverse correlation of interface width and oxide thickness; Difference between the rate of smoothing for wet and dry oxides.