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Kinetic smoothening: Growth thickness dependence of the interface width of the Si(001)/SiO2 interface.
- Source :
-
Journal of Applied Physics . 5/1/1995, Vol. 77 Issue 9, p4746. 4p. 2 Charts, 4 Graphs. - Publication Year :
- 1995
-
Abstract
- Focuses on a study which measured the root-mean-square width of the buried crystalline/amorphous silicon(001)/silicon oxide[sub2] interface. Properties of metal-oxide semiconductor devices; Reverse correlation of interface width and oxide thickness; Difference between the rate of smoothing for wet and dry oxides.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 77
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7659816
- Full Text :
- https://doi.org/10.1063/1.359410