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Phase selective synthesis of gadolinium silicide films on Si(111) using an interfacial SiO2 layer.
- Source :
-
Journal of Applied Physics . 7/1/2003, Vol. 94 Issue 1, p212. 4p. 2 Black and White Photographs, 1 Diagram, 2 Graphs. - Publication Year :
- 2003
-
Abstract
- We synthesized a single phase GdSi[sub 2] film on a Si(111) substrate with an interfacial SiO[sub 2] layer. In order to take account of the role of the interfacial SiO[sub 2] layer, systematic investigations on clean and oxidized Si substrates were done by using in situ reflection of high energy electron diffraction, x-ray diffraction, and atomic force microscopy of the silicides formed with post annealing. Our result showed that the interfacial SiO[sub 2] layer enhanced the structural transformation of the initial GdSi[sub 1.7] hexagonal phase into the GdSi[sub 2] orthorhombic phase above the decomposition temperature of SiO[sub 2](∼800 °C). We proposed a reaction mechanism for the GdSi[sub 2] film formation with the help of the interfacial SiO[sub 2] layer. The measured electrical resistivity of the Gd-silicide film strongly depends on the silicide phase. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SEMICONDUCTOR films
*CRYSTALLINE interfaces
*SEMICONDUCTORS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 94
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 10071056
- Full Text :
- https://doi.org/10.1063/1.1581342