A cross-sectional atomic force microscopy study of nanocrystalline Ge precipitates in SiO2 formed...

Authors :: Blaser, J.M.
Paine, D.C.
Source :: Journal of Applied Physics. 8/15/1997, Vol. 82 Issue 4, p1626. 6p. 5 Black and White Photographs, 4 Graphs.
Publication Year :: 1997
Abstract: Studies the precipitation and growth of Ge crystallites formed via a two-step process of hydrothermal oxidation of Si1-xGexO2 and subsequent chemical reduction in forming gas. Ge-particle distributions; Particle diameters and their position relative to the Si/oxide interface with closed circles.

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