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The study describes the development of a thermal model for flash lamp processing of 3C-SiC on silicon substrates in the millisecond regime, the FLASiC process. The kinetics of melting and regrowth is also considered.

The influence of high dose ion irradiation through amorphous surface layers in single crystalline 6H-SiC at elevated temperatures was analyzed. Quantification for irradiation at 500 degrees Celsius was conduced on material swelling, subsequent densification and surface erosion. Ion beam induced recrystallization was examined in the temperature range from 300-1300 degrees Celsius. The findings indicate that perfect epitaxial regrowth in (0001)-oriented 6H-SiC cannot be achieved by ion irradiation at elevated temperatures.

The effect of rare-earth clustering in dielectric media on the electroluminescence (EL) intensity, the charge trapping and the EL quenching is examined by using Tb and Eu-implanted Si[O.sub.2] layers. It is shown that in the case of Eu-implanted Si[O.sub.2], the quenching of the main EL line of [Eu.sup.3+] is correlated with positive charge trapping in the bulk of the dielectric.

The article presents a comparative study of the furnace and the flash-lamp annealing temperature dependent variation that is observed in the room temperature 1.52 [mu]m Er photoluminescence. The different factors that determine the photoluminescence intensity in both the cases are also determined.

Heavily p-type doped Ge layers are prepared by 100 keV Ga implantation and subsequent flash lamp annealing and the structure of the doped layer and the Ga distribution are examined by Rutherford backscattering spectrometry. The Ga activation is correlated with the layer regrowth and incomplete epitaxial regrowth has led to lower activation.

Systematic evolution of the electroluminescence (EL) with increasing flash lamp annealing (FLA) temperature in an Er-doped Ge-rich metal-oxide semiconductor structure is described. The enhancement of the EL decay time with rising FLA temperature is associated with recrystallization of the damaged Ge clusters in the absence of Ge outdiffusion.

The anomalous wear-out phenomena of Eu-implanted metal-oxide-semiconductor devices are examined. Current-voltage characteristics, electroluminescence (EL) decay times and the progression of the voltage and the EL spectrum with increasing charge injection are measured to analyze charge and trapping phenomena in the oxide layer to disclose details of the EL excitation mechanism.

Combined electroluminescence (EL) and photoluminescence (PL) studies have shown that the energy transfer processes from the [Er.sup.3+] to the Ge-related oxygen-deficiency centers (GeODCs) have played a major role in enhancing the 404 nm EL intensity in Ge-rich Si[O.sub.2]. The studies have shown that the 404 nm EL intensity is increased by 0.3% Er doping followed by a gradual decrease in intensity for higher Er concentrations, which is described in terms of a competition between the energy transfer processes and the gradual segregation of Er due to the destruction of GeODs with Er doping.

Combined microstructural and electroluminescence (EL) investigations of the Er-doped Ge-rich Si[O.sub.2] layers are used for showing that the Ge-related oxygen-deficiency centers (GeODCs) are situated at the Ge nanocrystal/Si[O.sub.2] interface. Ge concentration dependent quenching of the maximum EL intensity and the peak shifting toward higher Er concentration are explored with respect to the reduction of the surface-to-volume ratio with increasing nanocrystal size.

A low dose carbon implantation and high temperature annealing in CO atmosphere were applied to grow epitaxially high quality 3C-SiC nanocrystallites on (100) Si wafers covered by a 150 nm thick Si[O.sub.2] capping layer. Conventional and high resolution transmission electron microscopy were used to gain insight into formation of the nucleation of silicon-carbon clusters at the Si[O.sub.2]/Si interface as well as the morphology, the size, and the density of the inamoratas.

A study is carried out to determine the impact of rapid thermal annealing (RTA) in producing samples by sequential implantations of Si and Er ions into a 200 nm Si[O.sub.2] layer. The results from time-resolved photoluminescence (PL) measurements and rate equations model justify the energy migration mechanism from Si NC to the neighboring [Er.sup.3+].

A method of controlling melting by implanting a high dose of carbon at a controlled depth below the Si/SiC interface, which significantly alters the melting characteristics of the silicon, is described. This method is effective for increasing surface uniformity and making liquid phase processing compatible with standard device fabrication techniques.

Complex thermal and optical models were coupled for calculating the transient temperature profile during thermal processing to static stress models. The presented method of analysis can be applied for analyzing the effect of thermal treatments applied to other semiconductor materials.

Al supersaturated SiC layers were produced by multienergy, high-dose ion implantation into 6H- and 4H-SiC. In dependence on the implantation conditions damaged single-crystalline, amorphous, or nanocrystalline layers were formed.