The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices

The effect of rare-earth clustering in dielectric media on the electroluminescence (EL) intensity, the charge trapping and the EL quenching is examined by using Tb and Eu-implanted Si[O.sub.2] layers. It is shown that in the case of Eu-implanted Si[O.sub.2], the quenching of the main EL line of [Eu.sup.3+] is correlated with positive charge trapping in the bulk of the dielectric.