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Your search keyword '"Gujrathi S"' showing total 170 results
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170 results on '"Gujrathi S"'

1. Lifetimes of states in 19Ne above the 15 O + alpha breakup threshold

Author

Mythili, S., Davids, B., Alexander, T. K., Ball, G. C., Chicoine, M., Chakrawarthy, R. S., Churchman, R., Forster, J. S., Gujrathi, S., Hackman, G., Howell, D., Kanungo, R., Leslie, J. R., Padilla, E., Pearson, C. J., Ruiz, C., Ruprecht, G., Schumaker, M. A., Tanihata, I., Vockenhuber, C., Walden, P., and Yen, S.

Subjects
Nuclear Experiment
Abstract

The 15O(alpha,gamma)19Ne reaction plays a role in the ignition of Type I x-ray bursts on accreting neutron stars. The lifetimes of states in 19Ne above the 15O + alpha threshold of 3.53 MeV are important inputs to calculations of the astrophysical reaction rate. These levels in 19Ne were populated in the 3He(20Ne,alpha)19Ne reaction at a 20Ne beam energy of 34 MeV. The lifetimes of six states above the threshold were measured with the Doppler shift attenuation method (DSAM). The present measurements agree with previous determinations of the lifetimes of these states and in some cases are considerably more precise.

Published
2007
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2. Lifetime of 19Ne*(4.03 MeV)

Author

Kanungo, R., Alexander, T. K., Andreyev, A. N., Ball, G. C., Chakrawarthy, R. S., Chicoine, M., Churchman, R., Davids, B., Forster, J. S., Gujrathi, S., Hackman, G., Howell, D., Leslie, J. R., Morton, A. C., Mythili, S., Pearson, C. J., Ressler, J. J., Ruiz, C., Savajols, H., Schumaker, M. A., Tanihata, I., Walden, P., and Yen, S.

Subjects
Nuclear Experiment
Abstract

The Doppler-shift attenuation method was applied to measure the lifetime of the 4.03 MeV state in 19Ne. Utilizing a 3He-implanted Au foil as a target, the state was populated using the 20Ne(3He,alpha)19Ne reaction in inverse kinematics at a 20Ne beam energy of 34 MeV. De-excitation gamma rays were detected in coincidence with alpha particles. At the 1 sigma level, the lifetime was determined to be 11 +4, -3 fs and at the 95.45% confidence level the lifetime is 11 +8, -7 fs., Comment: 6 pages, submitted to Phys. Rev. C

Published
2006
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6. Characterization of a-SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for x-ray mask application

Author

Jean, A., Chaker, M., Diawara, Y., Leung, P.K., Gat, E., Mercier, P.P., Pepin, H., Gujrathi, S., Ross, G.G., and Kieffer, J.C.

Subjects
Thin films -- Research, Chemical vapor deposition -- Research, Physics
Abstract

The characteristics of amorphous hydrogenated a-SiC:H films grown in a conventional plasma enhanced chemical vapor deposition system were investigated using electron recoil detection, x-ray photoelectron spectroscopy and infrared absorption analysis. The results showed that the film composition determined the thickness and density. Hydrogen content was observed to be constant at 27 at.% over the whole composition range. The films exhibited an inorganic-like structure.

Published
1992

11. Remote oxygen-containing hydrogen plasma treatment of porous silicon.

Author

Grüning, U., Gujrathi, S. C., Poulin, S., Diawara, Y., and Yelon, A.

Subjects
*PLASMA gases, *SEMICONDUCTOR wafers, *SILICON
Abstract

Presents a study that analyzed the effects of treatment with remote oxygen-containing plasma on electrochemically etched porous silicon semiconductor wafers. Examination of the photoluminescence intensity of plasma-treated film wafers; Determination of the surface chemical composition of the film; Evaluation of the infrared measurements of the samples.

Published
1994

12. The determination of phases formed in AISiCu/Tin/Ti contact metallization structure of integrated...

Author

Fortin, V., Gagnon, G., Caron, M., Gujrathi, S. C., Currie, J. F., Ouellet, L., Tremblay, Y., and Biberger, M.

Subjects
X-ray diffractometers
Abstract

Presents a study which eamines x-ray diffraction (XRD) results that will be useful to understand and explain the main effects on the TiN barrier integrity due to the annealing temperature, the air exposure, the ARC layer, the TiN thickness and the substrate. Formation of phases at Al alloy TiN interface; Discussion and results of the study; Discussion on circuit problems.

Published
1998
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13. The effect of an oxygen plasma exposure on the reliability of a Ti/TiN contact metallization.

Author

Ouellet, L., Tremblay, Y., Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., Biberger, M., and Reynolds, R.

Subjects
TITANIUM, METALLIZING, PLASMA gases, THERMAL stresses
Abstract

Focuses on a study concerning the effect of oxygen plasma exposure on the contact metallization of titanium and nitrogen. Discussion of the barrier of titanium and nitrogen in oxygen plasma; Application of elastic recoil detection measurements; Effect of thermal stress and capacitor polysilicon.

Published
1996
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14. Positron study of plasma-enhanced chemical vapor deposited silicon nitride films.

Author

Landheer, D., Aers, G. C., Sproule, G. I., Khatri, R., Simpson, P. J., and Gujrathi, S. C.

Subjects
SILICON nitride, THIN films, PLASMA-enhanced chemical vapor deposition, POSITRON annihilation
Abstract

Focuses on silicon nitride films grown by plasma-enhanced chemical vapor deposition. Application of positron annihilation spectroscopy combined with Auger electron depth profiling; Measurement of the electric field induced in the silicon substrate; Electric field in the substrate required to fit the slope of the S parameter spectrum.

Published
1995
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16. Effect of rapid thermal annealing on both the stress and the bonding states of a-SiC:H films.

Author

El Khakani, M. A., Chaker, M., Jean, A., Boily, S., Pépin, H., Kieffer, J. C., and Gujrathi, S. C.

Subjects
CHEMICAL vapor deposition, THIN films, SILICON carbide, ANNEALING of metals, PHOTOELECTRON spectroscopy
Abstract

Examines the stress evolution of plasma enhanced chemical vapor deposition hydrogenated amorphous silicon carbide films by increasing the annealing temperature. Preparation of the films; Infrared absorption analysis; Information on the X-ray photoelectron spectroscopy analysis.

Published
1993
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22. Lifetime of $^{19}$Ne*(4.03 MeV)

Author

Kanungo, R., Alexander, T. K., Andreyev, A. N., Ball, G. C., Chakrawarthy, R. S., Chicoine, M., Churchman, R., Davids, B., Forster, J. S., Gujrathi, S., Hackman, G., Howell, D., Leslie, J. R., Morton, A. C., Mythili, S., Pearson, C. J., Ressler, J. J., Ruiz, C., Savajols, H., Schumaker, M. A., Tanihata, I., Walden, P., Yen, S., Grand Accélérateur National d'Ions Lourds (GANIL), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)

Subjects
26.30.+k, 25.55.Hp, 27.20.+n, [PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex], Nuclear Experiment
Abstract

The Doppler-shift attenuation method was applied to measure the lifetime of the 4.03 MeV state in 19Ne. Utilizing a 3He-implanted Au foil as a target, the state was populated using the 20Ne(3He,alpha)19Ne reaction in inverse kinematics at a 20Ne beam energy of 34 MeV. De-excitation gamma rays were detected in coincidence with alpha particles. At the 1 sigma level, the lifetime was determined to be 11 +4, -3 fs and at the 95.45% confidence level the lifetime is 11 +8, -7 fs., Comment: 6 pages, submitted to Phys. Rev. C

Published
2006

25. The use of elastic recoil detection for stoichiometry determination of reactively evaporated TiN layers.

Author

Gagnon, G., Currie, J. F., Brebner, J. L., Gujrathi, S. C., and Ouellet, L.

Subjects
THIN films, RAPID thermal processing
Abstract

Presents a study that produced thin TiN layers by reactive evaporation combined with rapid thermal annealing. Stoichiometry of the TiN layers; Properties of TiN for microelectronic technology; Description of elastic recoil detection.

Published
1993
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27. Round Robin: Measurement of H Implantation Distributions in Si by Elastic Recoil Detection

Author

Boudreault, G, Elliman, Robert, Grotzschel, R, Gujrathi, S., Jeynes, C., Lennard, W N, Rauhala, E, Sajavaara, T, Timmers, Heiko, Wang, Yanbin, Dall (previously Weijers), Tessica, Boudreault, G, Elliman, Robert, Grotzschel, R, Gujrathi, S., Jeynes, C., Lennard, W N, Rauhala, E, Sajavaara, T, Timmers, Heiko, Wang, Yanbin, and Dall (previously Weijers), Tessica

Abstract

A 200 mm amorphised Si wafer was implanted with 6-keV H + ions at a nominal fluence of 5×10 16 atoms/cm 2. The uniformity of the implant was better than 2% over the wafer. Samples of the wafer were analysed for absolute H fluence by nuclear reaction anal

Published
2004

29. Lifetimes of states inNe19above theO15+αbreakup threshold

Author

Mythili, S., primary, Davids, B., additional, Alexander, T. K., additional, Ball, G. C., additional, Chicoine, M., additional, Chakrawarthy, R. S., additional, Churchman, R., additional, Forster, J. S., additional, Gujrathi, S., additional, Hackman, G., additional, Howell, D., additional, Kanungo, R., additional, Leslie, J. R., additional, Padilla, E., additional, Pearson, C. J., additional, Ruiz, C., additional, Ruprecht, G., additional, Schumaker, M. A., additional, Tanihata, I., additional, Vockenhuber, C., additional, Walden, P., additional, and Yen, S., additional

Published
2008
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31. Lifetime of19Ne*(4.03 MeV)

Author

Kanungo, R., primary, Alexander, T. K., additional, Andreyev, A. N., additional, Ball, G. C., additional, Chakrawarthy, R. S., additional, Chicoine, M., additional, Churchman, R., additional, Davids, B., additional, Forster, J. S., additional, Gujrathi, S., additional, Hackman, G., additional, Howell, D., additional, Leslie, J. R., additional, Morton, A. C., additional, Mythili, S., additional, Pearson, C. J., additional, Ressler, J. J., additional, Ruiz, C., additional, Savajols, H., additional, Schumaker, M. A., additional, Tanihata, I., additional, Walden, P., additional, and Yen, S., additional

Published
2006
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47. Mechanical properties of silicon carbide films for X-ray lithography application

Author

Jean, A., primary, Khakani, M. A. El, additional, Chaker, M., additional, Gat, E., additional, Dodier, J., additional, Papadopoullos, A., additional, Lafontaine, H., additional, Pépin, H., additional, Kieffer, J. C., additional, Ravet, M. F., additional, Madouri, A., additional, Bourneix, J., additional, Rousseaux, F., additional, and Gujrathi, S. C., additional

Published
1992
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