Back to Search
Start Over
Round Robin: Measurement of H Implantation Distributions in Si by Elastic Recoil Detection
- Source :
- Nuclear Instruments and Methods in Physics Research: Section B
- Publication Year :
- 2004
-
Abstract
- A 200 mm amorphised Si wafer was implanted with 6-keV H + ions at a nominal fluence of 5×10 16 atoms/cm 2. The uniformity of the implant was better than 2% over the wafer. Samples of the wafer were analysed for absolute H fluence by nuclear reaction anal
Details
- Database :
- OAIster
- Journal :
- Nuclear Instruments and Methods in Physics Research: Section B
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1291806585
- Document Type :
- Electronic Resource