Characterization of a-SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for x-ray mask application

The characteristics of amorphous hydrogenated a-SiC:H films grown in a conventional plasma enhanced chemical vapor deposition system were investigated using electron recoil detection, x-ray photoelectron spectroscopy and infrared absorption analysis. The results showed that the film composition determined the thickness and density. Hydrogen content was observed to be constant at 27 at.% over the whole composition range. The films exhibited an inorganic-like structure.