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The determination of phases formed in AISiCu/Tin/Ti contact metallization structure of integrated...
- Source :
- Journal of Applied Physics; 1/1/1998, Vol. 83 Issue 1, p132, 7p, 1 Black and White Photograph, 1 Chart, 5 Graphs
- Publication Year :
- 1998
-
Abstract
- Presents a study which eamines x-ray diffraction (XRD) results that will be useful to understand and explain the main effects on the TiN barrier integrity due to the annealing temperature, the air exposure, the ARC layer, the TiN thickness and the substrate. Formation of phases at Al alloy TiN interface; Discussion and results of the study; Discussion on circuit problems.
- Subjects :
- X-ray diffractometers
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 83
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 44931
- Full Text :
- https://doi.org/10.1063/1.366710