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MoS2 has been reported to exhibit a resistive switching phenomenon in a vertical metal–insulator–metal (MIM) structure and has attracted much attention due to its ultra-thin active layer thickness. Here, the resistance evolutions in the high resistance state (HRS) and low resistance state (LRS) are investigated under constant voltage stress (CVS) or constant current stress (CCS) on MoS2 resistive switching devices. Interestingly, compared with bulk transition metal oxides (TMO), MoS2 exhibits an opposite characteristic in the fresh or pre-RESET device in the “HRS” wherein the resistance will increase to an even higher resistance after applying CVS, a unique phenomenon only accessible in 2D-based resistive switching devices. It is inferred that instead of in the highest resistance state, the fresh or pre-RESET devices are in an intermediate state with a small amount of Au embedded in the MoS2 film. Inspired by the capability of both bipolar and unipolar operation, positive and negative CVS measurements are performed and show similar characteristics. In addition, it is observed that the resistance state transition is faster when using higher electric stress. Numerical simulations have been performed to study the temperature effect with small-area integration capability. These results can be explained by a modified conductive-bridge-like model based on Au migration, uncovering the switching mechanisms in the ultrathin 2D materials and inspiring future studies in this area.

Molybdenum trioxide (MoO

Resistive random-access memory (RRAM) devices have drawn increasing interest for the simplicity of its structure, low power consumption and applicability to neuromorphic computing. By combining analog computing and data storage at the device level, neuromorphic computing system has the potential to meet the demand of computing power in applications such as artificial intelligence (AI), machine learning (ML) and Internet of Things (IoT). Monolayer rhenium diselenide (ReSe2), as a two-dimensional (2D) material, has been reported to exhibit non-volatile resistive switching (NVRS) behavior in RRAM devices with sub-nanometer active layer thickness. In this paper, we demonstrate stable multiple-step RESET in ReSe2 RRAM devices by applying different levels of DC electrical bias. Pulse measurement has been conducted to study the neuromorphic characteristics. Under different height of stimuli, the ReSe2 RRAM devices have been found to switch to different resistance states, which shows the potentiation of synaptic applications. Long-term potentiation (LTP) and depression (LTD) have been demonstrated with the gradual resistance switching behaviors observed in long-term plasticity programming. A Verilog-A model is proposed based on the multiple-step resistive switching behavior. By implementing the LTP/LTD parameters, an artificial neural network (ANN) is constructed for the demonstration of handwriting classification using Modified National Institute of Standards and Technology (MNIST) dataset.

Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large on/off ratio, fast switching speed and forming free characteristics. A unique conductive-point random access memory (CPRAM) effect is used to explain the switching mechanisms, supported by experimental results from current-sweep measurements., 3 pages, 5 figures, IEEE conference(2021 5th EDTM)

Non-volatile resistive switching, also known as memristor1 effect, where an electric field switches the resistance states of a two-terminal device, has emerged as an important concept in the development of high-density information storage, computing and reconfigurable systems2–9. The past decade has witnessed substantial advances in non-volatile resistive switching materials such as metal oxides and solid electrolytes. It was long believed that leakage currents would prevent the observation of this phenomenon for nanometre-thin insulating layers. However, the recent discovery of non-volatile resistive switching in two-dimensional monolayers of transition metal dichalcogenide10,11 and hexagonal boron nitride12 sandwich structures (also known as atomristors) has refuted this belief and added a new materials dimension owing to the benefits of size scaling10,13. Here we elucidate the origin of the switching mechanism in atomic sheets using monolayer MoS2 as a model system. Atomistic imaging and spectroscopy reveal that metal substitution into a sulfur vacancy results in a non-volatile change in the resistance, which is corroborated by computational studies of defect structures and electronic states. These findings provide an atomistic understanding of non-volatile switching and open a new direction in precision defect engineering, down to a single defect, towards achieving the smallest memristor for applications in ultra-dense memory, neuromorphic computing and radio-frequency communication systems2,3,11. A combination of atomistic imaging and spectroscopy reveals that metal substitution into a sulfur vacancy is the underlying mechanism for resistive switching in transition metal dichalcogenide monolayers.

Hexagonal boron nitride (hBN) has a large bandgap, high phonon energies and an atomically smooth surface absent of dangling bonds. As a result, it has been widely used as a dielectric to investigate electron physics in two-dimensional heterostructures and as a dielectric in the fabrication of two-dimensional transistors and optoelectronic devices. Here we show that hBN can be used to create analogue switches for applications in communication systems across radio, 5G and terahertz frequencies. Our approach relies on the non-volatile resistive switching capabilities of atomically thin hBN. The switches are composed of monolayer hBN sandwiched between two gold electrodes and exhibit a cutoff-frequency figure of merit of around 129 THz with a low insertion loss (≤0.5 dB) and high isolation (≥10 dB) from 0.1 to 200 GHz, as well as a high power handling (around 20 dBm) and nanosecond switching speeds, metrics that are superior to those of existing solid-state switches. Furthermore, the switches are 50 times more efficient than other non-volatile switches in terms of a d.c. energy-consumption metric, which is an important consideration for ubiquitous mobile systems. We also illustrate the potential of the hBN switches in a communication system with an 8.5 Gbit s–1 data transmission rate at 100 GHz with a low bit error rate under 10−10. Resistive switching in atomically thin sheets of hexagonal boron nitride can be used to create analogue switches for applications in communication systems across radio, 5G and terahertz frequencies.

Recently, various two-dimensional materials have been reported to exhibit non-volatile resistance switching phenomenon. The atomristors, featuring memristor effect in atomically thin nanomaterials such as monolayer transition metal dichalcogenides and hexagonal boron nitride, have drawn much attention due to the extremely thin active layer thickness with the advantages of forming-free characteristic, large on/off resistance ratio and fast switching speed. To investigate the switching mechanisms in the 2D monolayers, we introduced an electrical characterization method by current sweeping to illustrate the detailed information hidden in the commonly used voltage-sweep curves. Multiple transition steps have been observed in the SET process of MoS

MoS

Non-volatile resistive switching, also known as memristor

Since the discovery of graphene, two-dimensional (2D) materials have drawn much attention as a promising candidate in the next-generation electron devices, optoelectronics and bioelectronics1, 2. Over the last few years, researchers have proved the existence of the non-volatile resistance switching (NVRS) behavior in various 2D materials, including graphene oxide, functionalized MoS 2 , partially degraded black phosphorus and multi-layer hexagonal boron-nitride (h-BN), etc.3–6, where the resistance can be switched between a high-resistance state (HRS) and a low-resistance state (LRS) and maintained for a long time without power supply 7. In 2015, Sangwan et al. discovered that grain boundaries in single-layer MoS 2 can produce NVRS based on planar (horizontal) structure8. However, the planar structure without 3D stacking ability has the limitation of low integration density. Therefore, to overcome vertical scaling obstacle in NVRS based on conventional metal-insulator-metal (MIM) structure, it is desired to find out the thinnest materials that can produce the resistance switching behavior based on vertical device structure. Recently, we discovered that NVRS phenomenon is accessible in a variety of single-layer transition metal dichalcogenides (TMDs) and single-layer h-BN in vertical MIM configuration9–12. Compared with other 2D material-based NVRS devices, single-layer h-BN has only one atomic layer and ∼0.33 nm in thickness, which is the thinnest active layer in non-volatile resistance memory. These devices can be collectively labelled as “atomristor”, which means the memristor effect in atomically thin nanomaterials. The TMDs and h-BN atomristors have been studied using a crossbar or a litho-free & transfer-free structure, demonstrating forming-free switching with large on/off ratio (up to 6 orders of magnitude) and low switching voltage (down to 15 dB) up to 100 GHz. The operating frequencies cover the RF, 5G, and mm-wave bands, making this a promising low-power switch for diverse communication and connectivity front-end systems. The results of this work indicate a potential universal resistive switching behavior in 2D monolayers, which is applicable to memory technology, neuromorphic computing, RF switch and flexible electronics.

In this chapter, we demonstrated the application of two-dimensional (2D) monolayer atomic sheets (transition metal dichalcogenides and hexagonal boron nitride) in nonvolatile resistive memory using metal-insulator-metal vertical structure. These devices can be labeled as “atomristor,” which means the memristor effect in atomically thin nanomaterials. Among 2D memory devices, atomristor stands out due to the atomic thinness of the active layer, low switching voltage, forming-free characteristic, large ON/OFF current ratio, and fast switching speed. In the last section, another major application based on atomristor, monolayer MoS2-based radio frequency switch will be presented.

International audience; Non-volatile radio-frequency (RF) switches based on hexagonal boron nitride (hBN) are realized for the first time with low insertion loss (≤ 0.2 dB) and high isolation (≥ 15 dB) up to 110 GHz. Crystalline hBN enables the thinnest RF switch device with a single monolayer (~0.33 nm) as the memory layer owing to its robust layered structure. It affords ~20 dBm power handling, 10 dB higher compared to MoS 2 switches due to its wider bandgap (~6 eV). Importantly, operating frequencies cover the RF, 5G, and mm-wave bands, making this a promising low-power switch for diverse communication and connectivity front-end systems. Compared to other switch technologies based on MEMS, memristor, and phase-change memory (PCM), hBN switches offer a promising combination of non-volatility, nanosecond switching, power handling, high figure-of-merit cutoff frequency (43 THz), and heater-less ambient integration. Our pioneering work suggests that atomically-thin nanomaterials can be good device candidates for 5G and beyond.

Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (fc), is about 10 THz for sub-μm2 switches with favorable scaling that can afford fc above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.

Recently, two-dimensional (2D) atomic sheets have inspired new ideas in nanoscience including topologically protected charge transport,1,2 spatially separated excitons,3 and strongly anisotropic heat transport.4 Here, we report the intriguing observation of stable nonvolatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX2, M = Mo, W; and X = S, Se) transitional metal dichalcogenides (TMDs),5 which alludes to the universality of this phenomenon in TMD monolayers and offers forming-free switching. This observation of NVRS phenomenon, widely attributed to ionic diffusion, filament, and interfacial redox in bulk oxides and electrolytes,6−9 inspires new studies on defects, ion transport, and energetics at the sharp interfaces between atomically thin sheets and conducting electrodes. Our findings overturn the contemporary thinking that nonvolatile switching is not scalable to subnanometre owing to leakage cu...

Two-dimensional (2D) monolayer molybdenum disulfide (MoS2) has been used as the non-volatile resistance switching (NVRS) layer in resistive random-access memory (RRAM) devices. In this work, an electron-beam irradiation treatment on monolayer MoS2 film to modify the defect properties has been applied to improve the reliability of the NVRS devices. Compared to unirradiated devices, the reliability of the devices with a moderate radiation has been shown to improve by up to 1.5× for yield and 11× for average DC cycling endurance. To better understand the mechanism behind, Monte Carlo simulations have been performed based on our previously proposed conductive-point model with the metal ion substitution into sulfur vacancy. The simulation yield and cycle numbers show similar trends with the experimental data. Our results provide additional insights into defect engineering to precisely control the switching properties of 2D-based RRAM devices for a wide range of applications.

Non-volatile resistive switching (NVRS) has been recently observed with synthesized monolayer molybdenum disulfide (MoS 2 ) as the active layer and termed atomristors [1]. In this paper, we demonstrate the fastest switching speed ( 2 monolayer is demonstrated to have memory effect for the first time, expanding the materials beyond synthesized films. State-of-the-art non-volatile RF switches based on MoS 2 atomristors were prepared, featuring 0.25 dB insertion loss, 29 dB isolation (both at 67 GHz), and 70 THz cutoff frequency, a record performance compared to emerging RF switches. Our pioneering work suggests that memory effect maybe present in dozens or 100s of 2D monolayers similar to MoS 2 paving the path for new scientific studies for understanding the rich physics, and engineering research towards diverse device applications.

Non-volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few-layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX2 , M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS2 /MoS2 ), and an atomically thin insulator (h-BN). These results indicate the universality of the phenomenon in 2D non-conductive materials, and feature low switching voltage, large ON/OFF ratio, and forming-free characteristic. A dissociation-diffusion-adsorption model is proposed, attributing the enhanced conductance to metal atoms/ions adsorption into intrinsic vacancies, a conductive-point mechanism supported by first-principle calculations and scanning tunneling microscopy characterizations. The results motivate further research in the understanding and applications of defects in 2D materials.

Recently, various two-dimensional materials have been reported to exhibit non-volatile resistance switching phenomenon. The atomristors, featuring memristor effect in atomically thin nanomaterials such as monolayer transition metal dichalcogenides and hexagonal boron nitride, have drawn much attention due to the extremely thin active layer thickness with the advantages of forming-free characteristic, large on/off resistance ratio and fast switching speed. To investigate the switching mechanisms in the 2D monolayers, we introduced an electrical characterization method by current sweeping to illustrate the detailed information hidden in the commonly used voltage-sweep curves. Multiple transition steps have been observed in the SET process of MoS2-based resistance switching devices. The different behaviors of transition steps were attributed to the number of defects or vacancies associated with the switching phenomenon, which is consistent with the previously reported conductive-bridge-like model for 2D atomristors. This work provides an approach using current sweeping to precisely characterize the resistance switching effect and inspires further research to optimize the defect distribution in 2D materials for the applications in multi-bit non-volatile memory and neuromorphic computing.

2D materials have attracted much interest over the past decade in nanoelectronics. However, it was believed that the atomically thin layered materials are not able to show memristive effect in vertically stacked structure, until the recent discovery of monolayer transition metal dichalcogenide (TMD) atomristors, overcoming the scaling limit to sub-nanometer. Herein, the nonvolatile resistance switching (NVRS) phenomenon in monolayer hexagonal boron nitride (h-BN), a typical 2D insulator, is reported. The h-BN atomristors are studied using different electrodes and structures, featuring forming-free switching in both unipolar and bipolar operations, with large on/off ratio (up to 107 ). Moreover, fast switching speed (

Resistive random-access memory (RRAM) has shown great potential for neuromorphic engineering, due to its ability of emulating neural network and simple structure. To mimic the brain-learning behavior, two types of neural actions, short-term plasticity (STP) and long-term potentiation (LTP), should be imitated perfectly. In this work, we propose a unique RRAM cell with a double switching layer, in which a 2D material is embedded as a separation layer. Within a proper voltage range of stress, the mobile oxygen ions are blocked by the single atomic layer, and hence the subsequent relaxation of oxygen ions leads to a volatile switching characteristic. Owing to this volatile characteristic, the proposed device can mimic neural actions, STP and LTP, by a simple pulse train with different repetitions and frequencies without the complicated pulse settings of spike-timing-dependent plasticity (STDP). For various learning algorithms in future brain-inspired applications, different switching materials with different bind energies and relaxation times of oxygen ions can be utilized.

The Collaborative Innovation Center of Suzhou Nano Science & Technology, the Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, and the Priority Academic Program Development of Jiangsu Higher Education Institutions are also acknowledged. Stanford co-authors acknowledge support from the Non-volatile Memory Technology Research Initiative (NMTRI). An Chen from IBM is acknowledged for revision of section 5. Alok Ranjan from Singapore University of Technology and Design is acknowledged for useful discussion on section 3.5., Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, being electronic non-volatile memories those that have received most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. In this manuscript we describe the most recommendable methodologies for the fabrication, characterization and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology., This work has been supported by the Young 1000 Global Talent Recruitment Program of the Ministry of Education of China, the National Natural Science Foundation of China (grants no. 61502326, 41550110223, 11661131002), the Jiangsu Government (grant no. BK20150343), and the Ministry of Finance of China (grant no. SX21400213).

Over the last decade, two-dimensional (2D) materials have drawn much attention for the next-generation electron devices, optoelectronics and bioelectronics [1, 2]. Recently, non-volatile resistance switching (NVRS) behavior has been observed in various 2D materials, including graphene oxide, functionalized MoS2 and partially degraded black phosphorus, etc. [3-5], where the resistance can be modulated between a high-resistance state (HRS) and a low-resistance state (LRS) [6]. In addition, there are several reports about NVRS in multi-layer hexagonal boron-nitride (h-BN) [7]. Although 2D materials are widely regarded as promising candidates to overcome vertical scaling obstacle in NVRS based on conventional metal-insulator-metal (MIM) structure [3], few researchers believe that single-layer 2D material can produce NVRS [8] due to excessive leakage current. Sangwan et al. discovered that grain boundaries in single-layer MoS2 can produce NVRS based on planar (horizontal) structure [9]. However, the planar structure without 3D stacking ability has the limitation of low integration density. Recently, we reported the discovery that NVRS phenomenon is accessible in a variety of single-layer transition metal dichalcogenides (TMDs) in vertical MIM structure [10, 11]. Herein, we report another 2D insulating material, single-layer h-BN, also shows stable and desirable NVRS behavior. Compared with monolayer TMDs with three atomic layers, monolayer h-BN has only one atomic layer and ~0.33 nm in thickness, which is the thinnest active layer in non-volatile resistance memory. These devices can be labelled as “atomristor”, which means the memristor effect in atomically thin nanomaterials.[12] The h-BN atomristors have been studied using a crossbar structure (Au/h-BN/Au) [See Figure a]. Figure b shows a representative I-V curve of h-BN atomristor, demonstrating forming-free switching with large on/off ratio (up to >106) and low switching voltage (down to Ab-initio simulation reveals that the metal ion substitution in sulfur vacancies may be related to the switching from HRS to LRS, and area scaling test result is also consistent with this conductive-bridge-like mechanism. The results of this work indicate a potential universal resistive switching behavior in 2D insulating monolayers, which is applicable to memory technology, neuromorphic computing, RF switch and flexible electronics. References [1] Akinwande, D.; Petrone, N.; Hone, J.; Nat Commun 2014, 5. [2] Molle, A.; Goldberger, J.; Houssa, M.; Xu, Y.; Zhang, S. C.; Akinwande, D.; Nat Mater 2017, 16, 163. [3] Tan, C. et al., Chem. Soc. Rev. 2015, vol. 44, pp. 2615-2628. [4] Bessonov, A. A.; Kirikova, M. N.; Petukhov, D. I.; Allen, M.; Ryhänen, T.; Bailey, M. J. A. Nat Mater 2015, 14, (2), 199-204. [5] Hao, C.; Wen, F.; Xiang, J.; Yuan, S.; Yang, B.; Li, L.; Wang, W.; Zeng, Z.; Wang, L.; Liu, Z.; Tian, Y. Advanced Functional Materials 2016, 26, (12), 2016-2024. [6] Wong, H.-S. P.; Lee, H.-Y.; Yu, S.; Chen, Y.-S.; Wu, Y.; Chen, P.-S.; Lee, B.; Chen, F. T.; Tsai, M.-J. Proceedings of the IEEE 2012, 100, (6), 1951-1970. [7] Pan, C.; Ji, Y.; Xiao, N.; Hui, F.; Tang, K.; Guo, Y.; Xie, X.; Puglisi, F. M.; Larcher, L.; Miranda, E.; Jiang, L.; Shi, Y.; Valov, I.; McIntyre, P. C.; Waser, R.; Lanza, M. Advanced Functional Materials 2017, 1604811-n/a. [8] Tan, C.; Zhang, H. Chemical Society Reviews 2015, 44, (9), 2713-2731. [9] Sangwan, V. K.; Jariwala, D.; Kim, I. S.; Chen, K.-S.; Marks, T. J.; Lauhon, L. J.; Hersam, M. C. Nature Nanotechnology 2015, 10, (5), 403-406. [10] Ge, R., et al., Nanoletters 2018, 18, (1), 434-441 [11] Ge, R., et al., 2018 IEEE International Electron Devices Meeting (IEDM), 1-5 Dec. 2018. [12] Wu, X., et al., Adv. Mater. 2019, 31, 1806790 Figure 1

The last few years have witnessed significant developments in non-volatile resistance switching (NVRS) devices which employ layered 2D materials such as hexagonal Boron Nitride (hBN) and Transitional Metal Dichalcogenides (TMDs) as the active medium. Among these developments, the demonstration of NVRS in vertical metal-insulator-metal (MIM) devices with single layer atomic sheets used as the insulating layer, is particularly intriguing. While it was long believed that leakage currents would prevent observation of this phenomenon for atomically thin insulating layers our previous studies on mesoscopic scale devices demonstrated stable unipolar and bipolar operations. Furthermore, these studies suggest that localized defects and other atomic-scale multiphysics mechanisms are likely to have a key role in NVRS observed in these 2D devices. Here, we present our current research on the atomic level details of the relationship between the NVRS and heterogeneities in 2D materials. For these investigations, we utilize both single probe and multi-probe scanning electron microscopy (STM) methods, first, to identify the atomic level details of the heterogeneity and then to conduct transport experiments in the vicinity of specific heterogeneities. These studies aim to provide one to one correlation between the structural properties of the heterogeneity and its role on the transport properties of the material. Through these studies, we seek to deduce which particular defect structures are most desirable for NVRS and utilize this information for the development of extremely high-density data storage devices as well as neuromorphic applications and low power RF switches.

Over the past decade, the significance of two-dimensional (2D) atomic sheets has been fully demonstrated by a series of fascinating performances in electronic, photonic, and phononic nanotechnology including topologically-protected charge transport, spatially-separated excitons, and strongly anisotropic heat transport, respectively. Among various 2D materials, transitional metal dichalcogenides (TMDs) stand out due to their unique band gap, high mobility, and quantum confinement. In this work, a novel non-volatile resistive switching (NVRS) phenomenon is presented in the typical (MX2, M=Mo, W; and X=S, Se) transitional metal dichalcogenides (TMDs) single-layer atomic sheets in vertical metal-insulator-metal (MIM) structure. The intriguing findings subvert the traditional thinking that resistance switching is not accessible down to sub-nanometer scale owing to excessive leakage currents. Stable forming-free unipolar and bipolar operations are demonstrated under ambient condition at room temperature, with desirable transition voltage, large on/off ratio and promising reliability. Emerging device concepts in non-volatile flexible memory fabrics, zero static power radio-frequency switches, and neuromorphic computing could be inspired substantially from the universal NVRS effect in atomristor (in essence, memristor in single atomic sheet) and the associated wide materials space and electrode co-engineering for particular applications.

We describe a facile, low-cost, and green method to fabricate porous graphene networks/nickel foam (PG/NF) electrodes by electrochemical deposition of graphene sheets on nickel foams (NFs) for the application of supercapacitor electrodes. The electrodeposition process was accomplished by electrochemical reduction of graphene oxide (GO) in its aqueous suspension. The resultant binder-free PG/NF electrodes exhibited excellent double-layer capacitive performance with a high rate capability and a high specific capacitance of 183.2 mF cm-2 at the current density of 1 mA cm-2. Moreover, the specific capacitance maintains nearly 100% over 10,000 charge-discharge cycles, demonstrating a remarkable cyclic stability of these porous supercapacitor electrodes. PACS 82.47.Uv (Electrochemical capacitors); 82.45.Fk (Electrodes electrochemistry); 81.05.Rm (Fabrication of porous materials)

The mechanical properties of Si 1−x Ge x thin films are studied via nanoindentation. The Si 1−x Ge x thin films are prepared with a biased target ion beam deposition (BTIBD) method. We investigate the effect of varying the Si to Ge composition ratio on the elastic modulus and hardness of the resulting alloyed films. In comparison to pure BTIBD Si (E si = 154GPa, H si = 9.9GPa), for Si 1−x Ge x a decreasing trend in Young's modulus and hardness is observed to be associated with the increase in Ge content, and for Si 0.5 Ge 0.5 the values of 139 GPa and 8.4GPa are found to represent the Young's modulus and hardness, respectively.