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Zero-static power radio-frequency switches based on MoS2 atomristors.
- Source :
- Nature Communications; 6/28/2018, Vol. 9 Issue 1, p1-7, 7p, 5 Graphs
- Publication Year :
- 2018
-
Abstract
- Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS<subscript>2</subscript> atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS<subscript>2</subscript> RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS<subscript>2</subscript> switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (f<subscript>c</subscript>), is about 10 THz for sub-μm<superscript>2</superscript> switches with favorable scaling that can afford f<subscript>c</subscript> above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20411723
- Volume :
- 9
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Nature Communications
- Publication Type :
- Academic Journal
- Accession number :
- 138620006
- Full Text :
- https://doi.org/10.1038/s41467-018-04934-x