88 results on '"Monsieur, F."'
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2. Insight Into HCI Reliability on I/O Nitrided Devices
3. PD-SOI CMOS and SiGe BiCMOS Technologies for 5G and 6G communications
4. Implant heating contribution to amorphous layer formation: a KMC approach
5. Hot carrier stress: Aging modeling and analysis of defect location
6. Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution
7. TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment
8. New compact model for performance and process variability assessment in 14nm FDSOI CMOS technology
9. Experimental and theoretical investigation of the ‘apparent’ mobility degradation in Bulk and UTBB-FDSOI devices: A focus on the near-spacer-region resistance
10. The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies
11. Energy-driven Hot-Carrier model in advanced nodes
12. 14nm FDSOI technology for high speed and energy efficient applications
13. A new approach for modeling drain current process variability applied to FDSOI technology
14. Effective field and universal mobility in high-k metal gate UTBB-FDSOI devices
15. TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment.
16. UTBB FDSOI transistors with dual STI for a multi-Vt strategy at 20nm node and below
17. New insights into NBTI reliability in UTBOX-FDSOI PMOS transistors
18. Characterization and Modeling of Back Bias Impacts on Remote-Coulomb-Limited Mobility in UTBB-FDSOI Devices
19. Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS
20. 28nm FDSOI technology platform for high-speed low-voltage digital applications
21. Enabling the use of ion implantation for ultra-thin FDSOI n-MOSFETs
22. Fundamental aspects of HfO2-based high-k metal gate stack reliability and implications on tinv-scaling
23. Extremely Thin SOI (ETSOI) - a Planar CMOS Technology for System-on-chip Applications
24. Impact of substrate bias on GIDL for thin-BOX ETSOI devices
25. High-K gate stack breakdown statistics modeled by correlated interfacial layer and high-k breakdown path
26. High voltage devices in advanced CMOS technologies
27. High voltage devices integration into advanced CMOS technologies
28. Coupled Approach for Reliability Study of Fully Self Aligned SiGe:C 250GHz HBTs
29. Impact of Oxygen Vacancies Profile and Fringe Effect on Leakage Current Instability of Ta2O5 MIM Capacitors
30. How to monitor Metal-Insulator-Metal (MIM) capacitors dielectric reliability
31. MOS capacitors characterization under illumination
32. Post breakdown oxide lifetime based on digital circuit failure
33. New insight into tantalum pentoxide Metal-Insulator-Metal (MIM) capacitors: Leakage current modeling, self-heating, reliability assessment and industrial applications
34. Impact of Oxygen Vacancies Profile and Fringe Effect on Leakage Current Instability of Tantalum Pentoxide Metal-Insulator-Metal (MIM) Capacitors.
35. Coupled Approach for Reliability Study of Fully Self Aligned SiGe: C 250GHz HBTs.
36. Ageing under illumination of MOS transistors for active pixel sensors (APS) applications.
37. Investigations on Poly-SiGe Gate in Full 0.1um CMOS Integration
38. Insight on physics of Hf-based dielectrics reliability.
39. High-K dielectrics breakdown accurate lifetme assessment methodology.
40. Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides.
41. Evidence for hydrogen-related defects during NBTl stress in p-MOSFETs.
42. A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment.
43. Interface traps and oxide charges during NBTI stress in p-MOSFETs.
44. Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides.
45. Accurate and efficient design of experiment for reliability assessment. Application to a 20 Å gate oxide.
46. Time to breakdown and voltage to breakdown modeling for ultra-thin oxides (Tox<32Å).
47. Copper contact metallization for 22 nm and beyond.
48. Hydrogen release and defect generation rate in ultra-thin oxides [MOSFET devices].
49. Accurate and efficient design of experiment for reliability assessment. Application to a 20 Å gate oxide
50. Insight on physics of Hf-based dielectrics reliability
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