74 results on '"Amano, Hiroshi"'
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2. Novel electron beam technology using InGaN photocathode for high-throughput scanning electron microscope imaging
3. Challenges and opportunities of nitride light emitting devices by HVPE thanks to a stable Mg source
4. Development in AlGaN homojunction tunnel junction deep UV LEDs
5. Emission uniformity of UVC laser diodes on AlN substrates
6. Frontier electronics in memory of Professor Isamu Akasaki
7. “Regrowth-free” Fabrication of AlGaN/GaN HBT with N-p-n Configuration
8. 3D GaN Power Switching Electronics: A Revival of Interest in ELO
9. Detection and classification of dislocations in GaN by optical microscope using birefringence
10. Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: a model based on rate equations
11. Development of UV-C laser diodes on AlN substrate
12. Improvement of Contacts on Etched p-type GaN by Low-bias ICP–RIE
13. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes
14. Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements
15. Hologram Calculation, Printing, and Reconstruction Based on Light-in-Flight Recording by Holography
16. Electronic structure analysis of core structures of threading dislocations in GaN
17. Investigation of Mg and Si doping at different temperature for multi-color micro-LEDs with tunnel junctions (Conference Presentation)
18. Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes
19. Development of AlGaN-based deep-ultraviolet (DUV) LEDs focusing on the fluorine resin encapsulation and the prospect of the practical applications
20. Panelisation With Sheet Metal Cladding On Free-Form Roof
21. Current and Future of Solid State Lighting
22. Extraction of seismic flat events related to OWC and OGC
23. Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate
24. Preliminary study of Full Tensor Gravity (FTG) approach to detect fluids replacement due to oil production
25. Development of AlGaN DUV-LED
26. GaN/SiC Epitaxial Growth for High Power and High Switching Speed Device Applications.
27. The effect of exciton dimensionality on resonance energy transfer: advances for organic color converters in hybrid inorganic/organic LEDs
28. Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN
29. Reduction in operating voltage of UV laser diode
30. Effect of UV irradiation on the apoptosis and necrosis of Jurkat cells using UV LEDs
31. Fabrication of UV devices on various plane substrates
32. Thermoelectric Power Measurement of Catalyst-free Si-doped GaAs Nanowires.
33. Growth and fabrication of nitride-based LED on metallic substrate for application to high-power device and flexible display
34. High‐resolution seismic survey conducted for exploration of methane hydrate
35. Fabrication of Two-Dimensional Carbon Nanostructures Using Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition
36. Frontier electronics in memory of Professor Isamu Akasaki.
37. Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures
38. Fabrication of high-performance photodetector based on AlGaN/GaN hetero-field-effect transistors with p-GaN gate.
39. High Temperature MOVPE Growth of AlxGa1−xN (0.2-1) Layers on Sapphire and SiC Substrates for the Fabrication Deep UV Optical Devices.
40. Details of the improvement of crystalline quality of a-plane GaN using one-step lateral growth.
41. ZrB2 Substrate for Nitride Semiconductors
42. Fabrication of UV devices on various plane substrates.
43. Normally Off-Mode AlGaN/GaN Heterostructure Field Effect Transistor Using P-Type Gate Contact.
44. Nitride-Based Light-Emitting Diodes Grown on Particular Substrates: ZrB2, (3038) 4H-SiC and r -faced Sapphire.
45. Moth-Eye Light-Emitting Diodes.
46. Group III nitrides grown on 4H-SiC (3038) substrate by metal-organic vapor phase epitaxy.
47. Sublimation growth of AlN bulk crystals by seeded and spontaneous nucleation methods.
48. Impact of H2-preannealing of the Sapphire Substrate on the Crystallization of Low-Temperature-Deposited AlN Buffer Layer.
49. Transverse-mode control in GaN-based laser diodes
50. Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures.
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