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Fabrication of high-performance photodetector based on AlGaN/GaN hetero-field-effect transistors with p-GaN gate.
- Source :
- MRS Online Proceedings Library; 2006, Vol. 955 Issue 1, p1-6, 6p
- Publication Year :
- 2006
Details
- Language :
- English
- ISSN :
- 19464274
- Volume :
- 955
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- MRS Online Proceedings Library
- Publication Type :
- Conference
- Accession number :
- 148039055
- Full Text :
- https://doi.org/10.1557/PROC-0955-I02-02