Normally Off-Mode AlGaN/GaN Heterostructure Field Effect Transistor Using P-Type Gate Contact.

Details

Language :

English

ISSN :

19464274

Volume :

892

Issue :

1

Database :

Complementary Index

Journal :

MRS Online Proceedings Library

Publication Type :

Conference

Accession number :

149152457

Full Text :

https://doi.org/10.1557/PROC-0892-FF15-03