High Temperature MOVPE Growth of AlxGa1−xN (0.2-1) Layers on Sapphire and SiC Substrates for the Fabrication Deep UV Optical Devices.

Details

Language :

English

ISSN :

19464274

Volume :

955

Issue :

1

Database :

Complementary Index

Journal :

MRS Online Proceedings Library

Publication Type :

Conference

Accession number :

148039013

Full Text :

https://doi.org/10.1557/PROC-0955-I04-03